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A high-speed and high-resolution CMOS comparator with three-stage preamplifier
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作者 江利 许维胜 余有灵 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第4期80-84,共5页
The accuracy of A/D and D/A converters depend largely upon their inner comparators. To guarantee 12-bit high resolution for an A/D converter, a precise CMOS comparator consisting of a three-stage differential preampli... The accuracy of A/D and D/A converters depend largely upon their inner comparators. To guarantee 12-bit high resolution for an A/D converter, a precise CMOS comparator consisting of a three-stage differential preamplifier together with a positive feedback latch is proposed. Circuit structure, gain, the principle of input offset voltage storage and latching time constant for the comparator will be analyzed and optimized in this article. With 0.5μm HYNIX mixed signal technology, the simulation result shows that the circuit has a precision of 400 μV at 20 MHz. The test result shows that the circuit has a precision of 600μV at 16 MHz, and dissipates only 78μW of power dissipation at 5 V. The size of the chip is 210 × 180μm^2. The comparator has been successfully used in a 10 MSPS 12-bit A/D converter. The circuit can be also used in a less than 13-bit A/D converter. 展开更多
关键词 high speed comparator CMOS comparator input offset storage LATCH
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An 8 bit 1 MS/s SAR ADC with 7.72-ENOB
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作者 Jihai Duan Zhiyong Zhu +1 位作者 Jinli Deng Weilin Xu 《Journal of Semiconductors》 EI CAS CSCD 2017年第8期75-80,共6页
This paper presents a low power 8-bit 1 MS/s SAR ADC with 7.72-bit ENOB. Without an op-amp, an improved segmented capacitor DAC is proposed to reduce the capacitance and the chip area. A dynamic latch comparator with ... This paper presents a low power 8-bit 1 MS/s SAR ADC with 7.72-bit ENOB. Without an op-amp, an improved segmented capacitor DAC is proposed to reduce the capacitance and the chip area. A dynamic latch comparator with output offset voltage storage technology is used to improve the precision. Adding an extra positive feedback in the latch is to increase the speed. What is more, two pairs of CMOS switches are utilized to eliminate the kickback noise introduced by the latch. The proposed SAR ADC was fabricated in SMIC 0.18μm CMOS technology. The measured results show that this design achieves an SFDR of 61.8 dB and an ENOB of 7.72 bits, and it consumes 67.5μW with the FOM of 312 fJ/conversion-step at 1 MS/s sample under 1.8 V power supply. 展开更多
关键词 SAR ADC dynamic latch comparator output offset voltage storage technology kickback noise
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