In this paper, a novel junctionless field effect transistor（JLFET） is proposed. In the presence of a field plate between gate and drain, the gate-induced drain leakage（GIDL） effect is suppressed due to the decreas...In this paper, a novel junctionless field effect transistor（JLFET） is proposed. In the presence of a field plate between gate and drain, the gate-induced drain leakage（GIDL） effect is suppressed due to the decrease of lateral band-to-band tunneling probability. Thus, the off-state current Ioff, which is mainly provided by the GIDL current, is reduced. Sentaurus simulation shows that the Ioffof the new optimized JLFET is reduced by ～ 2 orders and its sub-threshold swing can reach76.8 mV/decade with little influence on its on-state current Ion, so its Ion/Ioff ratio is improved by 2 orders of magnitude compared with that of the normal JLFET. Optimization of device parameters such as Φfps（the work difference between field plate and substrate） and LFP（the length of field plate）, is also discussed in detail.展开更多
Influences of off-state overdrive stress on the fluorine-plasma treated AlGaN/GaN high-electronic mobility transistors(HEMTs)are experimentally investigated.It is observed that the reverse leakage current between the ...Influences of off-state overdrive stress on the fluorine-plasma treated AlGaN/GaN high-electronic mobility transistors(HEMTs)are experimentally investigated.It is observed that the reverse leakage current between the gate and source decreases after the off-state stress,whereas the current between the gate and drain increases.By analyzing those changes of the reverse currents based on the Frenkel–Poole model,we realize that the ionization of fluorine ions occurs during the off-state stress.Furthermore,threshold voltage degradation is also observed after the off-state stress,but the degradations of AlGaN/GaN HEMTs treated with different F-plasma RF powers are different.By comparing the differences between those devices,we find that the F-ions incorporated in the GaN buffer layer play an important role in averting degradation.Lastly,suggestions to obtain a more stable fluorine-plasma treated AlGaN/GaN HEMT are put forwarded.展开更多
A novel off-state gate RHBD technique to mitigate the single-event transient(SET)in the differential data path of analog circuit is demonstrated in this paper.Simulation results present that this off-state gate techni...A novel off-state gate RHBD technique to mitigate the single-event transient(SET)in the differential data path of analog circuit is demonstrated in this paper.Simulation results present that this off-state gate technique could exploit charge sharing in differential circuits and reduce differential mode voltage perturbation effectively.It is indicated that this technique is more effective to mitigate SET than the differential charge cancellation(DCC)technique with less penalty.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61704130)the Fundamental Research Funds for the Central Universities,China(Grant No.20101166085)the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology from Institute of Microelectronics,Chinese Academy of Sciences(Grant No.90109162905)
文摘In this paper, a novel junctionless field effect transistor（JLFET） is proposed. In the presence of a field plate between gate and drain, the gate-induced drain leakage（GIDL） effect is suppressed due to the decrease of lateral band-to-band tunneling probability. Thus, the off-state current Ioff, which is mainly provided by the GIDL current, is reduced. Sentaurus simulation shows that the Ioffof the new optimized JLFET is reduced by ～ 2 orders and its sub-threshold swing can reach76.8 mV/decade with little influence on its on-state current Ion, so its Ion/Ioff ratio is improved by 2 orders of magnitude compared with that of the normal JLFET. Optimization of device parameters such as Φfps（the work difference between field plate and substrate） and LFP（the length of field plate）, is also discussed in detail.
基金Project supported by the Laboratory Open Fund of Beijing Smart-Chip Microelectronics Technology Co.,Ltdthe National Natural Science Foundation of China(Grant Nos.11690042 and 12035019)+1 种基金the National Major Scientific Research Instrument Projects(Grant No.61727804)the Natural Science Foundation of Shaanxi Province,China(Grant No.2022-JM-386)。
文摘Influences of off-state overdrive stress on the fluorine-plasma treated AlGaN/GaN high-electronic mobility transistors(HEMTs)are experimentally investigated.It is observed that the reverse leakage current between the gate and source decreases after the off-state stress,whereas the current between the gate and drain increases.By analyzing those changes of the reverse currents based on the Frenkel–Poole model,we realize that the ionization of fluorine ions occurs during the off-state stress.Furthermore,threshold voltage degradation is also observed after the off-state stress,but the degradations of AlGaN/GaN HEMTs treated with different F-plasma RF powers are different.By comparing the differences between those devices,we find that the F-ions incorporated in the GaN buffer layer play an important role in averting degradation.Lastly,suggestions to obtain a more stable fluorine-plasma treated AlGaN/GaN HEMT are put forwarded.
基金supported by the State Key Program of the National Natural Science Foundation of China(Grant No.60836004)the National Natural Science Foundation of China(Grant No.61376109)
文摘A novel off-state gate RHBD technique to mitigate the single-event transient(SET)in the differential data path of analog circuit is demonstrated in this paper.Simulation results present that this off-state gate technique could exploit charge sharing in differential circuits and reduce differential mode voltage perturbation effectively.It is indicated that this technique is more effective to mitigate SET than the differential charge cancellation(DCC)technique with less penalty.
