在室内可见光通信中符号间干扰和噪声会严重影响系统性能,K均值(K-means)均衡方法可以抑制光无线信道的影响,但其复杂度较高,且在聚类边界处易出现误判。提出了改进聚类中心点的K-means(Improved Center K-means,IC-Kmeans)算法,通过随...在室内可见光通信中符号间干扰和噪声会严重影响系统性能,K均值(K-means)均衡方法可以抑制光无线信道的影响,但其复杂度较高,且在聚类边界处易出现误判。提出了改进聚类中心点的K-means(Improved Center K-means,IC-Kmeans)算法,通过随机生成足够长的训练序列,然后将训练序列每一簇的均值作为K-means聚类中心,避免了传统K-means反复迭代寻找聚类中心。进一步,提出了基于神经网络的IC-Kmeans(Neural Network Based IC-Kmeans,NNIC-Kmeans)算法,使用反向传播神经网络将接收端二维数据映射至三维空间,以增加不同簇之间混合数据的距离,提高了分类准确性。蒙特卡罗误码率仿真表明,IC-Kmeans均衡和传统K-means算法的误码率性能相当,但可以显著降低复杂度,特别是在信噪比较小时。同时,在室内多径信道模型下,与IC-Kmeans和传统Kmeans均衡相比,NNIC-Kmeans均衡的光正交频分复用系统误码率性能最好。展开更多
The carbonylation of phenyl bromide catalyzed by Co（OAc）_2 has been investigated with PhCOPh as a sensitizer under visible light in the presence of basic additive.With strong base CH_3ONa,PhCOOCH_3 is produced in 70...The carbonylation of phenyl bromide catalyzed by Co（OAc）_2 has been investigated with PhCOPh as a sensitizer under visible light in the presence of basic additive.With strong base CH_3ONa,PhCOOCH_3 is produced in 70%yield with 100%selectivity,the similar results are also obtained with a stronger base（CH_3）_3CONa.However,with another strong base NaOH,the yield of the ester is only 40%.On the other hand,with weak base NaOAc or（n-C_4H_9）_3N,phenyl bromide cannot be carbonylated.The results of carbonylation of the six substituted phenyl bromides suggest that the activities of o,m,p-BrC_6H_4CH_3 are similar to phenyl bromide, while the activities of o,m,p-BrC_6H_4Cl are higher with the high yields（≥93%） of the corresponding chloro-esters.In addition,the relative position of bromine and chlorine or methyl on phenyl ring has little effect on the activity of the carbonylation.展开更多
A new luminous material SrAl2O4：Eu^2＋,Dy^3＋/light conversion agent that can emit red light in the darkness after being excited was fabricated by combining light conversion agent on to SrAl2O4：Eu^2＋,Dy^3＋ particl...A new luminous material SrAl2O4：Eu^2＋,Dy^3＋/light conversion agent that can emit red light in the darkness after being excited was fabricated by combining light conversion agent on to SrAl2O4：Eu^2＋,Dy^3＋ particles through YsiX3.The morphology of the luminous materials was analyzed by scan electron microscopy（SEM）.The emission behavior was evaluated by fluorescence spectrophotometric analysis and the results demonstrated that the emission spectra of samples had a redshift compared to SrAl2O4：Eu^2＋,Dy^3＋ and the emission intensity rose dramatically at first and then decreased when the ratio of light conversion agent doping was over 1.4 wt.%.And the emission color of SrAl2O4：Eu^2＋,Dy^3＋/light conversion agent was tuned from green（SrAl2O4：Eu^2＋,Dy^3＋）to orange-red.Furthermore,the afterglow property was also investigated,and the results indicated that the afterglow brightness reached 6.5 cd/m^2,and as the light conversion agent concentration increased the brightness intensity decreased.展开更多
Deep-ultraviolet（DUV） light-emitting devices（LEDs） have a variety of potential applications.Zinc-oxide-based materials,which have wide bandgap and large exciton binding energy,have potential applications in high-p...Deep-ultraviolet（DUV） light-emitting devices（LEDs） have a variety of potential applications.Zinc-oxide-based materials,which have wide bandgap and large exciton binding energy,have potential applications in high-performance DUV LEDs.To realize such optoelectronic devices,the modulation of the bandgap is required.This has been demonstrated by the developments of Mg_xZn_（1-x）O and Be_xZn_（1-x）O alloys for the larger bandgap materials.Many efforts have been made to obtain DUV LEDs,and promising successes have been achieved continuously.In this article,we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.展开更多
We investigate the electron injection effect of inserting a thin aluminum（Al） layer into cesium carbonate（Cs2CO3）injection layer. Two groups of organic light-emitting devices（OLEDs） are fabricated. For the first...We investigate the electron injection effect of inserting a thin aluminum（Al） layer into cesium carbonate（Cs2CO3）injection layer. Two groups of organic light-emitting devices（OLEDs） are fabricated. For the first group of devices based on Alq3, we insert a thin Al layer of different thickness into Cs2CO3 injection layer, and the device＇s maximum current efficiency of 6.5 cd/A is obtained when the thickness of the thin Al layer is 0.4 nm. However, when the thickness of Al layer is 0.8 nm, the capacity of electron injection is the strongest. To validate the universality of this approach, then we fabricate another group of devices based on another blue emitting material. The maximum current efficiency of the device without and with a thin Al layer is 4.51 cd/A and 4.84 cd/A, respectively. Inserting a thin Al layer of an appropriate thickness into Cs2CO3 layer can result in the reduction of electron injection barrier, enhancement of the electron injection, and improvement of the performance of OLEDs. This can be attributed to the mechanism that thermally evaporated Cs2CO3 decomposes into cesium oxides, the thin Al layer reacts with cesium oxides to form Al–O–Cs complex, and the amount of the Al–O–Cs complex can be controlled by adjusting the thickness of the thin Al layer.展开更多
文摘在室内可见光通信中符号间干扰和噪声会严重影响系统性能,K均值(K-means)均衡方法可以抑制光无线信道的影响,但其复杂度较高,且在聚类边界处易出现误判。提出了改进聚类中心点的K-means(Improved Center K-means,IC-Kmeans)算法,通过随机生成足够长的训练序列,然后将训练序列每一簇的均值作为K-means聚类中心,避免了传统K-means反复迭代寻找聚类中心。进一步,提出了基于神经网络的IC-Kmeans(Neural Network Based IC-Kmeans,NNIC-Kmeans)算法,使用反向传播神经网络将接收端二维数据映射至三维空间,以增加不同簇之间混合数据的距离,提高了分类准确性。蒙特卡罗误码率仿真表明,IC-Kmeans均衡和传统K-means算法的误码率性能相当,但可以显著降低复杂度,特别是在信噪比较小时。同时,在室内多径信道模型下,与IC-Kmeans和传统Kmeans均衡相比,NNIC-Kmeans均衡的光正交频分复用系统误码率性能最好。
文摘The carbonylation of phenyl bromide catalyzed by Co（OAc）_2 has been investigated with PhCOPh as a sensitizer under visible light in the presence of basic additive.With strong base CH_3ONa,PhCOOCH_3 is produced in 70%yield with 100%selectivity,the similar results are also obtained with a stronger base（CH_3）_3CONa.However,with another strong base NaOH,the yield of the ester is only 40%.On the other hand,with weak base NaOAc or（n-C_4H_9）_3N,phenyl bromide cannot be carbonylated.The results of carbonylation of the six substituted phenyl bromides suggest that the activities of o,m,p-BrC_6H_4CH_3 are similar to phenyl bromide, while the activities of o,m,p-BrC_6H_4Cl are higher with the high yields（≥93%） of the corresponding chloro-esters.In addition,the relative position of bromine and chlorine or methyl on phenyl ring has little effect on the activity of the carbonylation.
基金Project supported by the National Natural Science Funds(51503082)the Fundamental Research Funds for the Central Universities(JUSRP51505,JUSRP116020)
文摘A new luminous material SrAl2O4：Eu^2＋,Dy^3＋/light conversion agent that can emit red light in the darkness after being excited was fabricated by combining light conversion agent on to SrAl2O4：Eu^2＋,Dy^3＋ particles through YsiX3.The morphology of the luminous materials was analyzed by scan electron microscopy（SEM）.The emission behavior was evaluated by fluorescence spectrophotometric analysis and the results demonstrated that the emission spectra of samples had a redshift compared to SrAl2O4：Eu^2＋,Dy^3＋ and the emission intensity rose dramatically at first and then decreased when the ratio of light conversion agent doping was over 1.4 wt.%.And the emission color of SrAl2O4：Eu^2＋,Dy^3＋/light conversion agent was tuned from green（SrAl2O4：Eu^2＋,Dy^3＋）to orange-red.Furthermore,the afterglow property was also investigated,and the results indicated that the afterglow brightness reached 6.5 cd/m^2,and as the light conversion agent concentration increased the brightness intensity decreased.
基金Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China(Grant No.61425021)the Natural Natural Science Foundation of China(Grant Nos.11374296,61376054,61475153,and 61604132)
文摘Deep-ultraviolet（DUV） light-emitting devices（LEDs） have a variety of potential applications.Zinc-oxide-based materials,which have wide bandgap and large exciton binding energy,have potential applications in high-performance DUV LEDs.To realize such optoelectronic devices,the modulation of the bandgap is required.This has been demonstrated by the developments of Mg_xZn_（1-x）O and Be_xZn_（1-x）O alloys for the larger bandgap materials.Many efforts have been made to obtain DUV LEDs,and promising successes have been achieved continuously.In this article,we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.
基金supported by the National Natural Science Foundation of China(Grant No.60906022)the Natural Science Foundation of Tianjin,China(Grant No.10JCYBJC01100)+2 种基金the Scientific Developing Foundation of Tianjin Education Commission,China(Grant No.2011ZD02)the Key Science and Technology Support Program of Tianjin,China(Grant No.14ZCZDGX00006)the National High Technology Research and Development Program of China(Grant No.2013AA014201)
文摘We investigate the electron injection effect of inserting a thin aluminum（Al） layer into cesium carbonate（Cs2CO3）injection layer. Two groups of organic light-emitting devices（OLEDs） are fabricated. For the first group of devices based on Alq3, we insert a thin Al layer of different thickness into Cs2CO3 injection layer, and the device＇s maximum current efficiency of 6.5 cd/A is obtained when the thickness of the thin Al layer is 0.4 nm. However, when the thickness of Al layer is 0.8 nm, the capacity of electron injection is the strongest. To validate the universality of this approach, then we fabricate another group of devices based on another blue emitting material. The maximum current efficiency of the device without and with a thin Al layer is 4.51 cd/A and 4.84 cd/A, respectively. Inserting a thin Al layer of an appropriate thickness into Cs2CO3 layer can result in the reduction of electron injection barrier, enhancement of the electron injection, and improvement of the performance of OLEDs. This can be attributed to the mechanism that thermally evaporated Cs2CO3 decomposes into cesium oxides, the thin Al layer reacts with cesium oxides to form Al–O–Cs complex, and the amount of the Al–O–Cs complex can be controlled by adjusting the thickness of the thin Al layer.
