期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Lighting the way:precision doping in organic semiconductors
1
作者 Niansheng Xu Feng Gao 《Science China Materials》 2026年第3期1797-1798,共2页
Doping is essential for modulating semiconductor conductivity,forming p-n junctions,and reducing contact resistance[1].Notably,as organic semiconductors(OSCs)advance toward high performance,flexibility,and miniaturiza... Doping is essential for modulating semiconductor conductivity,forming p-n junctions,and reducing contact resistance[1].Notably,as organic semiconductors(OSCs)advance toward high performance,flexibility,and miniaturization,achieving precise regionally selective doping becomes critical for building complex,highly integrated devices[2].In inorganic semiconductors(e.g.,silicon),sub-100-nanometer regional doping is achievable through photolithography and ion implantation—techniques foundational to modern complementary metaloxide-semiconductor(CMOS)technology[3]. 展开更多
关键词 reducing contact resistance notablyas organic semiconductors oscs advance precision ion implantation techniques inorganic semiconductors egsilicon sub nanometer regionally selective doping LIGHTING modulating semiconductor conductivityforming
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部