Theelectronicstructureof（InSb）m/（HgTe）nshortperiodsuperlatticesgrownalongthe（001）directionis studiedtheoreticallyusingnorm-conservingpseudo-potentialstogetherwiththelocal-densityapproximationforthe exchange-corr...Theelectronicstructureof（InSb）m/（HgTe）nshortperiodsuperlatticesgrownalongthe（001）directionis studiedtheoreticallyusingnorm-conservingpseudo-potentialstogetherwiththelocal-densityapproximationforthe exchange-correlationpotential.Thebandstructuredependsonthevalueofmandn,thenumberofmono-layersand on the ordering of atoms at the InSb/HgTe interface in one unit cell. Our calculation indicates that the superlattice can be a semiconductor having a band gap between the occupied and unoccupied bands, or a metal with no band gap at the Fermi energy. According to the further calculation of total charge density between（InSb）m/（HgTe）nwith different structures, a clearly different behavior happens when the structure changes from a system with a gap and a system without a gap.展开更多
文摘Theelectronicstructureof（InSb）m/（HgTe）nshortperiodsuperlatticesgrownalongthe（001）directionis studiedtheoreticallyusingnorm-conservingpseudo-potentialstogetherwiththelocal-densityapproximationforthe exchange-correlationpotential.Thebandstructuredependsonthevalueofmandn,thenumberofmono-layersand on the ordering of atoms at the InSb/HgTe interface in one unit cell. Our calculation indicates that the superlattice can be a semiconductor having a band gap between the occupied and unoccupied bands, or a metal with no band gap at the Fermi energy. According to the further calculation of total charge density between（InSb）m/（HgTe）nwith different structures, a clearly different behavior happens when the structure changes from a system with a gap and a system without a gap.
