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Non-volatile multi-level magnetic states switching in a geometrically frustrated Tb_(0.95)Mn_(1.5)Co_(0.5) compound
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作者 Kai Liu Sheng-Can Ma +7 位作者 Chun-Sheng Fang Yu-Yang Han Chao-Xin Qiu Han-Xiao Chen Chang-Cai Chen Xiao-Hua Luo Yong-Feng Hu Chin-Wei Wang 《Rare Metals》 2025年第7期4974-4987,共14页
The non-volatile multi-level magnetic or resistance states switching is extremely promising for newgeneration high-density information storage.In this work,we propose a novel multiple-state magnetic memory based on th... The non-volatile multi-level magnetic or resistance states switching is extremely promising for newgeneration high-density information storage.In this work,we propose a novel multiple-state magnetic memory based on the magnetic deflagration in a single Laves-phase Tb_(0.95)Mn_(1.5)Co_(0.5)compound with non-volatile and multilevel magnetic states switching.In consideration of the negative magnetization,six different magnetic states are achieved by simply applying the magnetic field.The abinitio calculations and neutron diffraction measurements indicate that the studied compound is a cubic structure withferromagnetic ordering at low temperature and the evolution in magnetic states(i.e.magnetic deflagration)should arise from the Barkhausen effect.The almost unchanged magnetic state under corresponding range of magnetic field enables the magnetization to be in the same magnitude even after 50 cyclic hysteresis loops.Furthermore,the retention,repeatable switching,and non-volatile characters of multi-level magnetic state have been primely confirmed.All these suggest that the Tb_(0.95)Mn_(1.5)Co_(0.5)compound with multiple magnetic deflagrations could be applied to multiple-state magnetic memory and this work would pave the way to design a novel multi-level magnetic storage. 展开更多
关键词 non-volatile information storage Multiple-state magnetic memory Magnetic deflagration Neutron diffraction Barkhausen effect Tb_(0.95)Mn_(1.5)Co_(0.5)compound
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Achieving over 95% yield of sub-1 ppm BER with retention over 10 years at 125 ℃ and endurance of 1 × 10^(12) cycles towards automotive non-volatile RAM applications
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作者 Dinggui Zeng Fantao Meng +14 位作者 Ruofei Chen Yang Gao Yihui Sun Junlu Gong Yongzhao Peng Qijun Guo Zhixiao Deng Weiming He Baoyu Xiong Jia Hou Jichao Li Wei Fang Qiang Dai Yaohua Wang Shikun He 《Journal of Semiconductors》 2025年第3期68-73,共6页
Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type ... Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type MRAM approaches mass production, there is an increasing demand for non-volatile RAM(nv RAM) technologies that offer fast write speed and high endurance. In this work, we demonstrate highly reliable 4 Mb nv RAM type MRAM suitable for industry and auto grade-1 applications. This nv RAM features retention over 10 years at 125 ℃, endurance of 1 × 10^(12)cycles with 20 ns write speed, making it ideal for applications requiring both high speed and broad temperature ranges. By employing innovative MTJ materials, process engineering, and a co-optimization of process and design, reliable read and write performance across the full temperature range between -40 to 125 ℃, and array yield that meets sub-1 ppm error rate was significantly improved from 0 to above 95%, a concrete step toward applications. 展开更多
关键词 magnetic random access memory(MRAM) non-volatile RAM(nvRAM) magnetic tunnel junction(MTJ) sub-1 ppm array yield reliability
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Robust non-volatile optical response for optoelectronic synapses in the dual-parallelα-In2Se3 device architecture
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作者 Weidong Dai Yukun Zhu +7 位作者 Xiangze Peng Honglai Li Yipeng Zhao Yicheng Wang Xing Xu Weichang Zhou Liang Ma Xiaolin Wei 《Nano Research》 2025年第11期1122-1132,共11页
Two-dimensional(2D)materials have been widely used in optoelectronic detection due to their excellent physical properties.Nevertheless,there has been comparatively little focus on the differentiation of light-matter i... Two-dimensional(2D)materials have been widely used in optoelectronic detection due to their excellent physical properties.Nevertheless,there has been comparatively little focus on the differentiation of light-matter interactions across distinct channel paths within the same 2D material,as well as on the photoelectric characteristics exhibited by the surface,vertical,and bottom of device.In this paper,dual-parallel device structures utilizing 2Dα-In_(2)Se_(3) semiconductors are fabricated with four conductive channels named by bottom-horizontal channel(BHC),middle-vertical channel(MVC),surface-quasi-horizontal channel(SQHC),and surface-horizontal channel(SHC)devices.The SHC device exhibits superior optical response of 101 A/W and external quantum efficiency of 1.857×104%across all conductive channels,which is over 32 times greater than that of BHC device.The SHC device boasts a fast response time of 41 ms,comparable to 32 ms offered by the nanoscale channel of the MVC device,and has a slow decay time of 319 ms similar to the 424 ms that comes with the longest channel of the SQHC device.The SHC device has the highest degree of learning and the lowest forgetting rate compared to the other three channels.Optoelectronic synapses based on dual-parallelα-In_(2)Se_(3) device can also mimic biological color image perception and memory functions,which can be used to visually determine the synaptic function of the device.In this work,on top of the excellent optoelectronic and semiconducting properties of the van der Waals semiconductorα-In2Se3,the advantages offered by the device structure are further explored to promote the development of integrated optoelectronics. 展开更多
关键词 α-In2Se3 four-in-one architecture non-volatile photoresponse SYNAPSE
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A Low-Power,Single-Poly,Non-Volatile Memory for Passive RFID Tags 被引量:1
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作者 赵涤燹 闫娜 +3 位作者 徐雯 杨立吾 王俊宇 闵昊 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第1期99-104,共6页
Single-poly,576bit non-volatile memory is designed and implemented in an SMIC 0.18μm standard CMOS process for the purpose of reducing the cost and power of passive RFID tag chips. The memory bit cell is designed wit... Single-poly,576bit non-volatile memory is designed and implemented in an SMIC 0.18μm standard CMOS process for the purpose of reducing the cost and power of passive RFID tag chips. The memory bit cell is designed with conventional single-poly pMOS transistors, based on the bi-directional Fowler-Nordheim tunneling effect, and the typical program/erase time is 10ms for every 16bits. A new ,single-ended sense amplifier is proposed to reduce the power dissipation in the current sensing scheme. The average current consumption of the whole memory chip is 0.8μA for the power supply voltage of 1.2V at a reading rate of 640kHz. 展开更多
关键词 RFID single-poly non-volatile memory standard CMOS process sense amplifier low power
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Correlation between dominant bacterial community and non-volatile organic compounds during the fermentation of shrimp sauces 被引量:8
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作者 Ruichang Gao Huijie Liu +3 位作者 Ying Li Hongying Liu Yue Zhou Li Yuan 《Food Science and Human Wellness》 SCIE CSCD 2023年第1期233-241,共9页
Shrimp sauce,one of the traditional salt-fermented food in China,has a unique flavor that is influenced by the resident microflora.The quality of salt-fermented shrimp sauce was evaluated in this work by determining t... Shrimp sauce,one of the traditional salt-fermented food in China,has a unique flavor that is influenced by the resident microflora.The quality of salt-fermented shrimp sauce was evaluated in this work by determining the total volatile basic nitrogen(TVB-N),the amino acid nitrogen(AAN),organic acid,5’-nucleotide and free amino acids(FAA).Moreover,the dynamics of microbial diversity during processing was investigated by using high-throughput sequencing technology.The results showed that the AAN,TVB-N,organic acid,5’-nucleotide and FAA content were in range of 0.93-1.42 g/100 mL,49.91-236.27 mg/100 mL,6.65-20.68 mg/mL,3.51-6.56 mg/mL and 81.27-102.90 mg/mL.Among the microbial diversity found in the shrimp sauce,Tetragenococcus,Flavobacterium,Polaribacter,Haematospirillum and Staphylococcus were the predominant genera.Correlation analysis indicated that the bacteria Tetragenococcus and Staphylococcus were important in the formation of non-volatile compounds.Tetragenococcus positively correlated with a variety of FAAs;Staphylococcus positively correlated with 5’-nucleotides.The analysis indicated that Tetragenococcus and Staphylococcus were the core genera affecting non-volatile components.These findings indicate the dynamics of the bacterial community and non-volatile components inter-relationships during shrimp sauce fermentation and provide a theoretical basis for improving the fermentation process of shrimp sauce. 展开更多
关键词 Shrimp sauces non-volatile compounds Bacterial community Electronic tongue Correlation analysis
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Comparative evaluation of commercial Douchi by different molds:biogenic amines,non-volatile and volatile compounds 被引量:6
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作者 Aijun Li Gang Yang +4 位作者 Zhirong Wang Shenglan Liao Muying Du Jun Song Jianquan Kan 《Food Science and Human Wellness》 SCIE CSCD 2024年第1期434-443,共10页
To provide new insights into the development and utilization of Douchi artificial starters,three common strains(Aspergillus oryzae,Mucor racemosus,and Rhizopus oligosporus)were used to study their influence on the fer... To provide new insights into the development and utilization of Douchi artificial starters,three common strains(Aspergillus oryzae,Mucor racemosus,and Rhizopus oligosporus)were used to study their influence on the fermentation of Douchi.The results showed that the biogenic amine contents of the three types of Douchi were all within the safe range and far lower than those of traditional fermented Douchi.Aspergillus-type Douchi produced more free amino acids than the other two types of Douchi,and its umami taste was more prominent in sensory evaluation(P<0.01),while Mucor-type and Rhizopus-type Douchi produced more esters and pyrazines,making the aroma,sauce,and Douchi flavor more abundant.According to the Pearson and PLS analyses results,sweetness was significantly negatively correlated with phenylalanine,cysteine,and acetic acid(P<0.05),bitterness was significantly negatively correlated with malic acid(P<0.05),the sour taste was significantly positively correlated with citric acid and most free amino acids(P<0.05),while astringency was significantly negatively correlated with glucose(P<0.001).Thirteen volatile compounds such as furfuryl alcohol,phenethyl alcohol,and benzaldehyde caused the flavor difference of three types of Douchi.This study provides theoretical basis for the selection of starting strains for commercial Douchi production. 展开更多
关键词 DOUCHI Starting strains non-volatile compounds Volatile compounds Sensory evaluation
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Non-volatile constituents and pharmacology of Chimonanthus: A review 被引量:4
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作者 SHU Ren-Geng WAN Yi-Li WANG Xiao-Min 《Chinese Journal of Natural Medicines》 SCIE CAS CSCD 2019年第3期161-186,共26页
Chimonanthus plants widely distributed in southern area of China, which have a long history of edibles and medicine. Phytochemical investigations have shown that Chimonanthus produced 143 non-volatile constituents, in... Chimonanthus plants widely distributed in southern area of China, which have a long history of edibles and medicine. Phytochemical investigations have shown that Chimonanthus produced 143 non-volatile constituents, including alkaloids, flavonoids, terpenoids, coumarins and others, which exhibit significant anti-oxidant, anti-bacterial, anti-cancer, anti-inflammatory, antihyperglycemic, antihyperlipidemic and other biological activities. On the basis of systematic reviewing of literatures, this article overviews the non-volatile constituents and pharmacology of Chimonanthus from domestic and foreign over the last 30 years(until June 2018), and may provide a useful reference for the further development of Chimonanthus. 展开更多
关键词 CHIMONANTHUS non-volatile constituents PHARMACOLOGY REVIEW
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Anti-inflammatory mechanism of the non-volatile ingredients performance liquid chromatography-heated electron spray ionization-high resolution mass spectroscope and cell metabolomics 被引量:1
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作者 JING Wenguang LIN Xiaoyu +5 位作者 LI Chu ZHAO Xiaoliang CHENG Xianlong WANG Penglong WEI Feng MA Shuangcheng 《Journal of Traditional Chinese Medicine》 SCIE CSCD 2024年第2期260-267,共8页
OBJECTIVE:To explore the anti-inflammatory components and mechanism of the non-volatile ingredients of patchouli.METHODS:High performance liquid chromatographyheated electron spray ionization-high resolution mass spec... OBJECTIVE:To explore the anti-inflammatory components and mechanism of the non-volatile ingredients of patchouli.METHODS:High performance liquid chromatographyheated electron spray ionization-high resolution mass spectroscope(HPLC-HESI-HRMS)was used to analyze the chemical constituents of the non-volatile ingredients of patchouli.The anti-inflammatory activity of ingredients was evaluated using lipopolysaccharide(LPS)induced RAW264.7 cell inflammation model,and the antiinflammatory mechanism was investigated using multivariate statistical analysis of cell metabolomics.RESULTS:The non-volatile ingredients of patchouli were characterized by HPLC-HESI-HRMS,and 36 flavonoids and 18 other components were identified.These ingredients of patchouli not only had a good protective effect on the LPS-induced inflammation model of RAW264.7 cells,but also regulated the expression levels of arginine,L-leucine,cholesterol,fructose and sorbitol by down-regulating arginine metabolism,aminoacyl-tRNA biosynthesis,polyol/sorbitol pathway,so as to reduce inflammation and reduce cell damage.CONCLUSION:The non-volatile ingredients of patchouli had good anti-inflammatory effect and exerted its curative effect by regulating endogenous metabolic pathway to reduce inflammatory response. 展开更多
关键词 Pogostemon non-volatile ingredients ANTI-INFLAMMATORY cell metabolomics
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Overview of one transistor type of hybrid organic ferroelectric non-volatile memory 被引量:3
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作者 Young Tea Chun Daping Chu 《Instrumentation》 2015年第1期65-74,共10页
Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent yea... Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent years.This emerging type of memory devices can lead to a new instrument system as a potential alternative to previous non-volatile memory building blocks in future processing units because of their numerous merits such as cost-effective process,simple structure and freedom in substrate choices.This bi-stable non-volatile memory device of information storage has been investigated using several organic or inorganic semiconductors with organic ferroelectric polymer materials.Recent progresses in this ferroelectric memory field,hybrid system have attracted a lot of attention due to their excellent device performance in comparison with that of all organic systems.In this paper,a general review of this type of ferroelectric non-volatile memory is provided,which include the device structure,organic ferroelectric materials,electrical characteristics and working principles.We also present some snapshots of our previous study on hybrid ferroelectric memories including our recent work based on zinc oxide nanowire channels. 展开更多
关键词 ORGANIC FERROELECTRIC field effect TRANSISTOR non-volatile MEMORY HYBRID
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Correlation of gut microorganisms and non-volatile flavor substances provides new insights for breeding Scylla paramamosain
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作者 Gao GAO Xing LI +7 位作者 Kangxiang QIN Yun HU Xiaosong JIANG Chenxi CHE Yuntao LI Changkao MU Chunlin WANG Huan WANG 《Journal of Oceanology and Limnology》 SCIE CAS CSCD 2024年第4期1336-1347,共12页
The farming of Scylla paramamosain with specific flavors has a higher commercial value,and the flavors are related to the integrated farming environment and non-volatile flavor substances,while the survival environmen... The farming of Scylla paramamosain with specific flavors has a higher commercial value,and the flavors are related to the integrated farming environment and non-volatile flavor substances,while the survival environment is one of the important ways to source gut microorganisms in the organism.In this study,the levels of dominant taxa in the gut flora of S.paramamosain from Mong Cai,Vietnam(VN),Taishan City,Guangdong Province(TS)of China,and Ninghai County,Ningbo City(NB)Zhejiang Province of China converged with those of S.paramamosain from Sanmen County,Ningbo City(CK 1,CK 2,and CK 3)at 28 d of domestication.The top 15 genera with the highest abundance of VN,TS,and NB gut flora were the same as CK 1,CK 2,and CK 3,but with different percentages,and gradually converged to CK 1,CK 2,and CK 3,respectively,at 28 d of domestication.Correlation between intestinal flora and non-volatile flavor substances in the hepatopancreas at the percentage level of relative abundance of bacterial genera found that above 28 d of domestication,Muribaculaceae,Psychrilyobacter,Clostridia_vadinBB 60_group,Halarcobacter Carboxylicivirga,Sediminispirochaeta may be the most important genera affecting flavor amino acids of VN.Sediminispirochaeta,Carboxylicivirga,Halarcobacter,Photobacterium,ZOR 0006,Psychrilyobacter,and Pseudomonas may be the most important genera affecting flavor amino acids of NB.Sediminispirochaeta,Carboxylicivirga,Halarcobacter,Photobacterium,ZOR 0006,Vibrio,and Sphingomonas may be the most important genera affecting flavor amino acids of TS.These results show that the intestinal flora structure of crabs from different areas were domesticated in the same area for at least 28 d before they converged to that of the domesticated crab,and the most important genera affecting the flavor amino acids of TS,VN,and NB were also identified.The results of this study provide a reference and basis for the technique of directional cultivation of the flavor quality of the crab. 展开更多
关键词 survival environment Scylla paramamosain intestinal flora structure non-volatile flavor substance directional breeding
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The Electric-Field Controllable Non-Volatile 35° Rotation of Magnetic Easy Axis in Magnetoelectric CoFeB/(001)-Cut Pb(Mg_(1/3)Nb_(2/3))O_3-25%PbTiO_3 Heterostructure
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作者 何浩 赵江涛 +6 位作者 罗震林 杨远俊 徐晗 洪宾 王亮鑫 王瑞雪 高琛 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第6期141-144,共4页
Using in situ electric-field-modulated anisotropic magnetoresistance measurement, a large reversible and non- volatile in-plane rotation of magnetic easy axis of -35° between the positive and negative electrical ... Using in situ electric-field-modulated anisotropic magnetoresistance measurement, a large reversible and non- volatile in-plane rotation of magnetic easy axis of -35° between the positive and negative electrical poling states is demonstrated in C040Fe40B20//(001)-cut Pb(Mgl/3Nb2/3)O3-25PbTiO3 (PMN-PT). The specific magneto- electric coupling mechanism therein is experimentally verified to be related to the synchronous in-plane strain rotation induced by 109° ferroelastic domain switching in the (001)-cut PMN-PT substrate. 展开更多
关键词 in PT is of PMN O3-25%PbTiO3 Heterostructure Rotation of Magnetic Easy Axis in Magnetoelectric CoFeB The Electric-Field Controllable non-volatile 35 Mg Nb
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Rapid characterization of non-volatile phenolic compounds reveals the reliable chemical markers for authentication of traditional Chinese medicine Xiang-ru among confusing Elsholtzia species
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作者 ZENG Zhen ZHANG Chen +10 位作者 HU Jiadong WANG Feiyan WU Ziding WANG Jing ZHANG Jun YANG Shuda CHEN Junfeng LI Mingming TONG Qi QIU Shi CHEN Wansheng 《Chinese Journal of Natural Medicines》 SCIE CAS CSCD 2024年第4期375-384,共10页
The aerial parts of Mosla chinensis Maxim.and Mosla chinensis cv.'Jiangxiangru'(MCJ)are widely utilized in traditional Chinese medicine(TCM),known collectively as Xiang-ru.However,due to clinical effectiveness... The aerial parts of Mosla chinensis Maxim.and Mosla chinensis cv.'Jiangxiangru'(MCJ)are widely utilized in traditional Chinese medicine(TCM),known collectively as Xiang-ru.However,due to clinical effectiveness concerns and frequent misidentification,the original plants have increasingly been substituted by various species within the genera Elsholtzia and Mosla.The challenge in distinguishing between these genera arises from their similar morphological and metabolic profiles.To address this issue,our study introduced a rapid method for metabolic characterization,employing high-resolution mass spectrometry-based metabolomics.Through detailed biosynthetic and chemometric analyses,we pinpointed five phenolic compounds—salviaflaside,cynaroside,scutellarein-7-O-D-glucoside,rutin,and vicenin-2—among 203 identified compounds,as reliable chemical markers for distinguishing Xiang-ru from closely related Elsholtzia species.This methodology holds promise for broad application in the analysis of plant aerial parts,especially in verifying the authenticity of aromatic traditional medicinal plants.Our findings underscore the importance of non-volatile compounds as dependable chemical markers in the authentication process of aromatic traditional medicinal plants. 展开更多
关键词 Genus Elsholtzia Genus Mosla Traditional Chinese medicine Xiang-ru non-volatile phenolic compounds Liquid chromatography-mass spectrometry
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Formation of high density TiN nanocrystals and its application in non-volatile memories
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作者 李学林 冯顺山 陈国光 《Chinese Physics B》 SCIE EI CAS CSCD 2008年第3期1070-1077,共8页
Non-volatile memory based on TiN nanocrystal (TiN-NC) charge storage nodes embedded in SiO2 has been fabricated and its electrical properties have been measured. It was found that the density and size distribution o... Non-volatile memory based on TiN nanocrystal (TiN-NC) charge storage nodes embedded in SiO2 has been fabricated and its electrical properties have been measured. It was found that the density and size distribution of TiN-NCs can be controlled by annealing temperature. The formation of well separated crystalline TiN nano-dots with an average size of 5 nm is confirmed by transmission electron microscopy and x-ray diffraction, x-ray photoelectron spectroscopy confirms the existence of a transition layer of TiNxOy/SiON oxide between TiN-NC and SiO2, which reduces the barrier height of tunnel oxide and thereby enhances programming/erasing speed. The memory device shows a memory window of 2.5V and an endurance cycle throughout 10^5. Its charging mechanism, which is interpreted from the analysis of programming speed (dVth/dt) and the gate leakage versus voltage characteristics (Ig vs Vg), has been explained by direct tunnelling for tunnel oxide and Fowler Nordheim tunnelling for control oxide at programming voltages lower than 9V, and by Fowler-Nordheim tunnelling for both the oxides at programming voltages higher than 9V. 展开更多
关键词 TiN nanocrystal SIZE DENSITY non-volatile memory application
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An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies(Invited paper)
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作者 J.M.Portal M.Bocquet +8 位作者 M.Moreau H.Aziza D.Deleruyelle Y.Zhang W.Kang J.-O.Klein Y.-G.Zhang C.Chappert W.-S.Zhao 《Journal of Electronic Science and Technology》 CAS 2014年第2期173-181,共9页
Low power consumption is a major issue in nowadays electronics systems. This trend is pushed by the development of data center related to cloud services and soon to the Internet of Things (IoT) deployment. Memories ... Low power consumption is a major issue in nowadays electronics systems. This trend is pushed by the development of data center related to cloud services and soon to the Internet of Things (IoT) deployment. Memories are one of the major contributors to power consumption. However, the development of emerging memory technologies paves the way to low-power design, through the partial replacement of the dynamic random access memory (DRAM) with the non-volatile stand-alone memory in servers or with the embedded or distributed emerging non-volatile memory in IoT objects. In the latter case, non-volatile flip-flops (NVFFs) seem a promising candidate to replace the retention latch. Indeed, IoT objects present long sleep time and NVFFs offer to save data in registers with zero power when the application is idle. This paper gives an overview of NVFF architecture flavors for various emerging memory technologies. 展开更多
关键词 Emerging memory technology ferroelectric RAM low power magnetic RAM non-volatile flip-flops phase change RAM resistive RAM
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Molecular dynamics simulations on the wet/dry self-latching and electric fields triggered wet/dry transitions between nanosheets:A non-volatile memory nanostructure
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作者 Jianzhuo Zhu Xinyu Zhang +1 位作者 Xingyuan Li Qiuming Peng 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第2期135-139,共5页
We design a nanostructure composing of two nanoscale graphene sheets parallelly immersed in water.Using molecular dynamics simulations,we demonstrate that the wet/dry state between the graphene sheets can be self-latc... We design a nanostructure composing of two nanoscale graphene sheets parallelly immersed in water.Using molecular dynamics simulations,we demonstrate that the wet/dry state between the graphene sheets can be self-latched;moreover,the wet→dry/dry→wet transition takes place when applying an external electric field perpendicular/parallel to the graphene sheets(E;/E;).This structure works like a flash memory device(a non-volatile memory):the stored information(wet and dry states)of the system can be kept spontaneously,and can also be rewritten by external electric fields.On the one hand,when the distance between the two nanosheets is close to a certain distance,the free energy barriers for the transitions dry→wet and wet→dry can be quite large.As a result,the wet and dry states are self-latched.On the other hand,an E;and an E;will respectively increase and decrease the free energy of the water located in-between the two nanosheets.Consequently,the wet→dry and dry→wet transitions are observed.Our results may be useful for designing novel information memory devices. 展开更多
关键词 wet/dry properties non-volatile memory nanostructure molecular dynamics simulations
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Design of an Electrically Written and Optically Read Non-volatile Memory Device Employing BiFeO3/Au Heterostructures with Strong Absorption Resonance
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作者 肖鹏博 张伟 +2 位作者 曲天良 黄云 胡绍民 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第7期67-70,共4页
Exploiting new concepts for dense, fast, and nonvolatile random access memory with reduced energy consump- tion is a significant issue for information technology. Here we design an 'electrically written and optically... Exploiting new concepts for dense, fast, and nonvolatile random access memory with reduced energy consump- tion is a significant issue for information technology. Here we design an 'electrically written and optically read' information storage device employing BiFeO3/A u heterostruetures with strong absorption resonance. The electro- optic effect is the basis for the device design, which arises from the strong absorption resonance in BiFeO3/Au heterostructures and the electrically tunable significant birefringence of the BiFeO3 film. We first construct a sim- ulation calculation of the BiFeO3/Au structure spectrum and identify absorption resonance and electro-optical modulation characteristics. Following a micro scale partition, the surface reflected light intensity of different polarization units is calculated. The results depend on electric polarization states of the BiFeO3 film, thus BiFeO3/Au heterostructures can essentially be designed as a type of electrically written and optically read infor- mation storage device by utilizing the scanning near-field optical microscopy technology based on the conductive silicon cantilever tip with nanofabricated aperture. This work will shed light on information storage technology. 展开更多
关键词 BFO Design of an Electrically Written and Optically Read non-volatile Memory Device Employing BiFeO3/Au Heterostructures with Strong Absorption Resonance
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A Low Power Non-Volatile LR-WPAN Baseband Processor with Wake-Up Identification Receiver
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作者 YU Shuangming FENG Peng WU Nanjian 《China Communications》 SCIE CSCD 2016年第1期33-46,共14页
The paper proposes a low power non-volatile baseband processor with wake-up identification(WUI) receiver for LR-WPAN transceiver.It consists of WUI receiver,main receiver,transmitter,non-volatile memory(NVM) and power... The paper proposes a low power non-volatile baseband processor with wake-up identification(WUI) receiver for LR-WPAN transceiver.It consists of WUI receiver,main receiver,transmitter,non-volatile memory(NVM) and power management module.The main receiver adopts a unified simplified synchronization method and channel codec with proactive Reed-Solomon Bypass technique,which increases the robustness and energy efficiency of receiver.The WUI receiver specifies the communication node and wakes up the transceiver to reduce average power consumption of the transceiver.The embedded NVM can backup/restore the states information of processor that avoids the loss of the state information caused by power failure and reduces the unnecessary power of repetitive computation when the processor is waked up from power down mode.The baseband processor is designed and verified on a FPGA board.The simulated power consumption of processor is 5.1uW for transmitting and 28.2μW for receiving.The WUI receiver technique reduces the average power consumption of transceiver remarkably.If the transceiver operates 30 seconds in every 15 minutes,the average power consumption of the transceiver can be reduced by two orders of magnitude.The NVM avoids the loss of the state information caused by power failure and energy waste caused by repetitive computation. 展开更多
关键词 LR-WPAN wake-up identification receiver synchronization non-volatile memory baseband processor digital integrated circuit low power chip design
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A Non-volatile Switchable Infrared Stealth Metafilm with GST
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作者 Cong Quan Song Gu +5 位作者 Tingzhao Fu Ping Liu Wei Xu Chucai Guo Zhihong Zhu Jianfa Zhang 《Light(Advanced Manufacturing)》 2025年第1期138-147,共10页
In this paper,we experimentally demonstrate a non-volatile switchable infrared stealth metafilm based on high temperature resistant metal Molybdenum(Mo)and phase change material Ge2Sb2Te5(GST).By controlling the phase... In this paper,we experimentally demonstrate a non-volatile switchable infrared stealth metafilm based on high temperature resistant metal Molybdenum(Mo)and phase change material Ge2Sb2Te5(GST).By controlling the phase state of GST,the switch between the infrared stealth and the non-stealth states can be realized.Specifically,when the GST is in the amorphous state,the emissivity of the film in the 3-5μm and 8-14μm atmospheric window band is suppressed and can realize infrared stealth,together with a high absorption peak of 94%at 6.08μm,which enables radiative heat dissipation;While for the crystalline state of the GST,the average emissivity is more than 0.7 in the band of 8-14μm,and the infrared stealth function cannot be realized.When the background temperature is 100°C,the temperature difference between the two samples reaches as high as 28°C under an infrared thermal imager.Therefore,our proposed metafilm can flexibly regulate the infrared thermal radiation of the target so as to realize the switch between the infrared stealth and non-stealth state.We have fabricated the metafilm on both hard and flexible substrates.Our work holds profound significance for the study of dynamic thermal radiation control and it is set to pave the way for the practical implementation of intelligent infrared stealth technology. 展开更多
关键词 Infrared stealth Phase change material Atmospheric window METAMATERIALS non-volatile SWITCHABLE
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A BaTiO_(3)-based flexible ferroelectric capacitor for non-volatile memories
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作者 Xingpeng Liu Chunshu Wei +6 位作者 Tangyou Sun Fabi Zhang Haiou Li Linsheng Liu Ying Peng Hezhang Li Min Hong 《Journal of Materiomics》 2025年第2期74-82,共9页
BaTiO_(3)(BTO)ferroelectric films,which are renowned for their lead-free compositions,superior stability,and absence of a wake-up effect,are promising candidate materials in the field of non-volatile memories.However,... BaTiO_(3)(BTO)ferroelectric films,which are renowned for their lead-free compositions,superior stability,and absence of a wake-up effect,are promising candidate materials in the field of non-volatile memories.However,the prerequisites for high-temperature conditions in the fabrication of ferroelectric thin films impose constraints on the substrate choice,which has limited the advancement in non-volatile memories based on single-crystal flexible BTO films with robust ferroelectric properties.Herein,a technique has been developed for the fabrication of flexible devices using a pulsed laser deposition system.BTO ferroelectric films have then been deposited onto a flexible mica substrate,with SrTiO_(3)(STO)serving as a buffer layer.The obtained flexible BTO devices exhibited excellent ferroelectricity,with a maximum polarization(2Pmax)of up to 42.58μC/cm^(2) and a remnant polarization(2P_(r))of up to 21.39 μC/cm^(2).Furthermore,even after 1000 bending cycles,the bipolar switching endurance remained high at 1012 cycles.After 104 s,the flexible BTO device still maintained excellent polarization characteristics.These results make the flexible BTO ferroelectric thin film a potential candidate for the next generation of nonvolatile memories. 展开更多
关键词 BaTiO_(3)ferroelectric films non-volatile memory Flexible mica substrate
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A Survey of Non-Volatile Main Memory Technologies:State-of-the-Arts,Practices,and Future Directions 被引量:6
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作者 Hai-Kun Liu Di Chen +4 位作者 Hai Jin Xiao-Fei Liao Binsheng He Kan Hu Yu Zhang 《Journal of Computer Science & Technology》 SCIE EI CSCD 2021年第1期4-32,共29页
Non-Volatile Main Memories (NVMMs) have recently emerged as a promising technology for future memory systems. Generally, NVMMs have many desirable properties such as high density, byte-addressability, non-volatility, ... Non-Volatile Main Memories (NVMMs) have recently emerged as a promising technology for future memory systems. Generally, NVMMs have many desirable properties such as high density, byte-addressability, non-volatility, low cost, and energy efficiency, at the expense of high write latency, high write power consumption, and limited write endurance. NVMMs have become a competitive alternative of Dynamic Random Access Memory (DRAM), and will fundamentally change the landscape of memory systems. They bring many research opportunities as well as challenges on system architectural designs, memory management in operating systems (OSes), and programming models for hybrid memory systems. In this article, we revisit the landscape of emerging NVMM technologies, and then survey the state-of-the-art studies of NVMM technologies. We classify those studies with a taxonomy according to different dimensions such as memory architectures, data persistence, performance improvement, energy saving, and wear leveling. Second, to demonstrate the best practices in building NVMM systems, we introduce our recent work of hybrid memory system designs from the dimensions of architectures, systems, and applications. At last, we present our vision of future research directions of NVMMs and shed some light on design challenges and opportunities. 展开更多
关键词 non-volatile memory persistent memory hybrid memory systems memory hierarchy
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