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THE EFFECTS OF PULSE BIAS VOLTAGE AND N_2 PARTIAL PRESSURE ON TiAlN FILMS OF ARC ION PLATING (AIP) 被引量:4
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作者 M.S. Li, S.L. Zhu, Fuhui Wang, C. Sun and L.S. Wen (Institute of Metal Research, The Chinese Academy of Sciences, Shenyang l10016, China) 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2001年第6期520-524,共5页
Owing to the characteristics of arc ion plating(AIP) technique, the structure and composition of TiAlN films can be tailored by controlling of various parameters such as compositions of target materials, N2 partial pr... Owing to the characteristics of arc ion plating(AIP) technique, the structure and composition of TiAlN films can be tailored by controlling of various parameters such as compositions of target materials, N2 partial pressure, substrate bias and so on. In this study, several titanium aluminum nitride films were deposited on 1Cr11Ni2W2MoV steel for compressor blade of areo-engine under different d.c pulse bias voltage and nitrogen partial pressure. The effects of substrate pulse bias and nitrogen partial pressure on the deposition rate, droplet formation, microstruture and elemental component of the films were investigated. 展开更多
关键词 TiAlN film pulse bias voltage nitrogen partial pressure arc ion plating
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