Pericardiocentesis is a common therapeutic procedure for pericardial tamponade due to pericardial effusion as well as a diagnostic procedure to obtain fluid for cytopathologic examination.Standard methods include ultr...Pericardiocentesis is a common therapeutic procedure for pericardial tamponade due to pericardial effusion as well as a diagnostic procedure to obtain fluid for cytopathologic examination.Standard methods include ultrasound or fluoroscopic guidance,which generally result in high success rates(over 95%).[1,2].The complication rate of pericardiocentesis is low with reported incidences of l%-2%.[3]In the past,the most common indications for pericardiocentesis include uremia,tuberculous pericarditis or malignant pericardial effusions.However,with the increasing number of catheter-based interventional cardiac procedures,iatrogenic pericardial effusions are becoming more frequent[4-6].展开更多
使用模具并采用磁控溅射法在铁电陶瓷PZT基体上沉积具有条形分布结构的Ni Ti SMA薄膜。显微组织结构观察发现,以条形分布结构方式沉积的Ni Ti SMA薄膜晶化处理后具有等轴晶结构。比较所制备PZT/Ni-Ti SMA薄膜复合材料与纯PZT的介电常数...使用模具并采用磁控溅射法在铁电陶瓷PZT基体上沉积具有条形分布结构的Ni Ti SMA薄膜。显微组织结构观察发现,以条形分布结构方式沉积的Ni Ti SMA薄膜晶化处理后具有等轴晶结构。比较所制备PZT/Ni-Ti SMA薄膜复合材料与纯PZT的介电常数及介电损耗发现,两者的介电损耗水平接近;复合材料的介电常数比纯PZT的提高约18%。Ni Ti SMA的沉积使基体中靠近薄膜区域的Zr/Ti物质的量比恰好落在准同型相界区内,致使所制备复合材料的介电性能优于纯PZT。展开更多
文摘Pericardiocentesis is a common therapeutic procedure for pericardial tamponade due to pericardial effusion as well as a diagnostic procedure to obtain fluid for cytopathologic examination.Standard methods include ultrasound or fluoroscopic guidance,which generally result in high success rates(over 95%).[1,2].The complication rate of pericardiocentesis is low with reported incidences of l%-2%.[3]In the past,the most common indications for pericardiocentesis include uremia,tuberculous pericarditis or malignant pericardial effusions.However,with the increasing number of catheter-based interventional cardiac procedures,iatrogenic pericardial effusions are becoming more frequent[4-6].
文摘使用模具并采用磁控溅射法在铁电陶瓷PZT基体上沉积具有条形分布结构的Ni Ti SMA薄膜。显微组织结构观察发现,以条形分布结构方式沉积的Ni Ti SMA薄膜晶化处理后具有等轴晶结构。比较所制备PZT/Ni-Ti SMA薄膜复合材料与纯PZT的介电常数及介电损耗发现,两者的介电损耗水平接近;复合材料的介电常数比纯PZT的提高约18%。Ni Ti SMA的沉积使基体中靠近薄膜区域的Zr/Ti物质的量比恰好落在准同型相界区内,致使所制备复合材料的介电性能优于纯PZT。
