This paper presents new neutron-induced single event upset(SEU) data on the SRAM devices with the technology nodes from 40 nm to 500 nm due to spallation, reactor, and monoenergetic neutrons. The SEU effect is investi...This paper presents new neutron-induced single event upset(SEU) data on the SRAM devices with the technology nodes from 40 nm to 500 nm due to spallation, reactor, and monoenergetic neutrons. The SEU effect is investigated as a function of incident neutron energy spectrum, technology node, byte pattern and neutron fluence rate. The experimental data show that the SEU effect mainly depends on the incident neutron spectrum and the technology node, and the SEU sensitivity induced by low-energy neutrons significantly increases with the technology downscaling. Monte-Carlo simulations of nuclear interactions with device architecture are utilized for comparing with the experimental results. This simulation approach allows us to investigate the key parameters of the SEU sensitivity, which are determined by the technology node and supply voltage. The simulation shows that the high-energy neutrons have more nuclear reaction channels to generate more secondary particles which lead to the significant enhancement of the SEU cross-sections, and thus revealing the physical mechanism for SEU sensitivity to the incident neutron spectrum.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11690040 and 11690043)the Foundation of State Key Laboratory of China(Grant Nos.SKLIPR1801Z and 6142802180304)
文摘This paper presents new neutron-induced single event upset(SEU) data on the SRAM devices with the technology nodes from 40 nm to 500 nm due to spallation, reactor, and monoenergetic neutrons. The SEU effect is investigated as a function of incident neutron energy spectrum, technology node, byte pattern and neutron fluence rate. The experimental data show that the SEU effect mainly depends on the incident neutron spectrum and the technology node, and the SEU sensitivity induced by low-energy neutrons significantly increases with the technology downscaling. Monte-Carlo simulations of nuclear interactions with device architecture are utilized for comparing with the experimental results. This simulation approach allows us to investigate the key parameters of the SEU sensitivity, which are determined by the technology node and supply voltage. The simulation shows that the high-energy neutrons have more nuclear reaction channels to generate more secondary particles which lead to the significant enhancement of the SEU cross-sections, and thus revealing the physical mechanism for SEU sensitivity to the incident neutron spectrum.
文摘通过对静态随机存取存储器(static random-access memory,SRAM)单粒子翻转截面的研究,提出了一种更有效、成本更低、可测量一到几十兆电子伏能量范围内中子能谱的新方法。利用已发表单粒子翻转截面信息的SRAM,采用奇异值分解(singular value decomposition,SVD)方法进行解谱,可测试低能中子源的中子能谱。在进一步的研究中,利用信息熵理论研究了SRAM的数量与能谱测试准确性的关系。研究结果表明,解谱结果的精度在很大程度上取决于SRAM翻转截面的敏感区宽度和参与解谱的不同SRAM的数量。
