A new cyclometalated iridium(III) complex with the formula [Ir(DPQ)2(acac)] (DPQ= 2,3-diphenylquinoxaline; acac=acetylacetone) was prepared. The structure of the complex was confirmed by Elemental Analysis (EA), 1H NM...A new cyclometalated iridium(III) complex with the formula [Ir(DPQ)2(acac)] (DPQ= 2,3-diphenylquinoxaline; acac=acetylacetone) was prepared. The structure of the complex was confirmed by Elemental Analysis (EA), 1H NMR, and mass spectroscopy (MS). The UV-vis absorption and photoluminescent properties of the complex were investigated.展开更多
Monodisperse sodium yttrium fluoride com sticks with hexagonal nanostructure were successfully prepared by a facile and repeatable precipitation transformation method. The phase and morphology of the products were cha...Monodisperse sodium yttrium fluoride com sticks with hexagonal nanostructure were successfully prepared by a facile and repeatable precipitation transformation method. The phase and morphology of the products were characterized with X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The growth mechanism was studied, indicating that the initial generated Y（OH）3 gradually translated into YF3 and then transformed into com stick-like H-NaYF4 nanoparticles owing to the crucial role of fluorine ions in the solution. The up-conversion （UC） luminescence properties of H-NaYF4：20%Yb3＋,2%Er3＋ nanocrystals were discussed. The intensive green emission in the range of 510-570 nm was attributed to the （2Hll/2, 4S3/2）----4It5/2 transition and the weaker red emission between 640 and 680 nm was originating from the 4F9/2----4115/2 transition.展开更多
The optical properties of blue emitting BaAl2S4:Eu thin-films were studied. The emission peak is around 470 nm, whose FWHM (full width at half maximum) is 35 nm. The dielectric constant is 3.03 from transmission spect...The optical properties of blue emitting BaAl2S4:Eu thin-films were studied. The emission peak is around 470 nm, whose FWHM (full width at half maximum) is 35 nm. The dielectric constant is 3.03 from transmission spectrum, and the optical band gap is approximately 4.6 eV. It is found that the cubic phase and orthorhombic phase exist in fabricated thin-films. Furthermore, the energy band structure of BaAl2S4 : Eu thin-films from X-ray photo-electron spectra (XPS) and the absorption spectra were analyzed.展开更多
Ge-SiO2 thin films were deposited on p-type Si substrates using the radio frequency (rf) magnetron sputtering technique with a Ge-SiO2 composite target. Films were annealed in N2 ambience for 30 min at 300℃-1000℃ wi...Ge-SiO2 thin films were deposited on p-type Si substrates using the radio frequency (rf) magnetron sputtering technique with a Ge-SiO2 composite target. Films were annealed in N2 ambience for 30 min at 300℃-1000℃ with an interval of 100℃. Through the X-ray diffraction, the average size of Ge nanocrystals (nc-Ge) was determined. They increased from 3.9 to 6.1 nm with increasing annealing temperature in the range of 600℃-1000℃. Under ultraviolet excitation, all samples emit a strong violet band centered at 396 nm. With the formation of nc-Ge, the samples exhibit another emission of orange band with the peak at 580 nm and its intensity increases with the increasing size of nc-Ge.The peak positions of two bands do not shift obviously. Experimental data indicate that the violet band comes from GeO defect and the orange band originates mainly from the luminescence centers at the interface between the nc-Ge and SiO2 matrix.展开更多
文摘A new cyclometalated iridium(III) complex with the formula [Ir(DPQ)2(acac)] (DPQ= 2,3-diphenylquinoxaline; acac=acetylacetone) was prepared. The structure of the complex was confirmed by Elemental Analysis (EA), 1H NMR, and mass spectroscopy (MS). The UV-vis absorption and photoluminescent properties of the complex were investigated.
基金supported by the National Natural Science Foundation(NSF)of China(51202066)Program for New Century Excellent Talents supported by the China Education Ministry(NCET-13-0784)+5 种基金Study Abroad Program sponsored by China Scholarship Council(201308430385)Scientific Research Fund of Hunan Provincial Education Department(12A047)Research of Science and Technology Department of Hunan Province(2013SK3162)State Key Laboratory Program of Rare Earth Resource Utilization of China(RERU2013019)State Key Laboratory Programs of Inorganic Synthesis and Preparative Chemistry of China(2013-26)Key Laboratory Program of Ecological Impacts of Hydraulic-projects and Restoration of Aquatic Ecosystem in Ministry of Water Resources of China(2013001)
文摘Monodisperse sodium yttrium fluoride com sticks with hexagonal nanostructure were successfully prepared by a facile and repeatable precipitation transformation method. The phase and morphology of the products were characterized with X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The growth mechanism was studied, indicating that the initial generated Y（OH）3 gradually translated into YF3 and then transformed into com stick-like H-NaYF4 nanoparticles owing to the crucial role of fluorine ions in the solution. The up-conversion （UC） luminescence properties of H-NaYF4：20%Yb3＋,2%Er3＋ nanocrystals were discussed. The intensive green emission in the range of 510-570 nm was attributed to the （2Hll/2, 4S3/2）----4It5/2 transition and the weaker red emission between 640 and 680 nm was originating from the 4F9/2----4115/2 transition.
文摘The optical properties of blue emitting BaAl2S4:Eu thin-films were studied. The emission peak is around 470 nm, whose FWHM (full width at half maximum) is 35 nm. The dielectric constant is 3.03 from transmission spectrum, and the optical band gap is approximately 4.6 eV. It is found that the cubic phase and orthorhombic phase exist in fabricated thin-films. Furthermore, the energy band structure of BaAl2S4 : Eu thin-films from X-ray photo-electron spectra (XPS) and the absorption spectra were analyzed.
基金This work was supported by Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences.
文摘Ge-SiO2 thin films were deposited on p-type Si substrates using the radio frequency (rf) magnetron sputtering technique with a Ge-SiO2 composite target. Films were annealed in N2 ambience for 30 min at 300℃-1000℃ with an interval of 100℃. Through the X-ray diffraction, the average size of Ge nanocrystals (nc-Ge) was determined. They increased from 3.9 to 6.1 nm with increasing annealing temperature in the range of 600℃-1000℃. Under ultraviolet excitation, all samples emit a strong violet band centered at 396 nm. With the formation of nc-Ge, the samples exhibit another emission of orange band with the peak at 580 nm and its intensity increases with the increasing size of nc-Ge.The peak positions of two bands do not shift obviously. Experimental data indicate that the violet band comes from GeO defect and the orange band originates mainly from the luminescence centers at the interface between the nc-Ge and SiO2 matrix.
