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RIEMANN-HILBERT CHARACTERIZATION FOR MAIN BESSEL POLYNOMIALS WITH VARYING LARGE NEGATIVE PARAMETERS 被引量:2
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作者 段萍 杜金元 《Acta Mathematica Scientia》 SCIE CSCD 2014年第2期557-567,共11页
In this article, we establish the Bessel polynomials with varying large negative parameters and discuss their orthogonality based on the generalized Bessel polynomials. By using the Riemann-Hilbert boundary value prob... In this article, we establish the Bessel polynomials with varying large negative parameters and discuss their orthogonality based on the generalized Bessel polynomials. By using the Riemann-Hilbert boundary value problem on the positive real axis, we get the Riemann-Hilbert characterization of the main Bessel polynomials with varying large negative parameters. 展开更多
关键词 Generalized Bessel polynomials Bessel polynomials with varying large neg-ative parameters ORTHOGONALITY Riemann-Hilbert boundary value problem Riemann-Hilbert characterization
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On redundancy-modified NAND multiplexing
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作者 DIAO Ming YU Lianhua CHEN Xiaobo 《Journal of Systems Engineering and Electronics》 SCIE EI CSCD 2018年第4期864-872,共9页
In order to make systems that are based on unreliable components reliable, the design of fault tolerant architectures will be necessary. Inspired by von Neumann's negative AND(NAND)multiplexing and William's inter... In order to make systems that are based on unreliable components reliable, the design of fault tolerant architectures will be necessary. Inspired by von Neumann's negative AND(NAND)multiplexing and William's interwoven redundant logic, this paper presents a fault tolerant technique based on redundancy-modified NAND gates for future nanocomputers. Bifurcation theory is used to analyze fault tolerant ability of the system and the simulation results show that the new system has a much higher fault tolerant ability than the conventional multiplexing based on NAND gates.According to the evaluation, the proposed architecture can tolerate a device error rate of up to 10-1, with multiple redundant components. This fault tolerant technique is potentially useful for future nanoelectronics. 展开更多
关键词 fault tolerant MULTIPLEXING redundancy-modified neg-ative AND (NAND) gate
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