Fe2O3/SiO2 nano-composite films were prepared by sol-gel technique combining heat treatment in the range of 100-900 ℃. The particle size was observed by FE-SEM. Optical properties of the films were investigated by UV...Fe2O3/SiO2 nano-composite films were prepared by sol-gel technique combining heat treatment in the range of 100-900 ℃. The particle size was observed by FE-SEM. Optical properties of the films were investigated by UV-visible spectra. Structural and magnetic characteristics were investigated through FT-IR and VSM. The transparency of the Fe2O3/SiO2 nano-composite films decreased with the content of the Fe2O3. Water and organic solvent in the films were evaporated with heat treatment, so the transparency of the films was enhanced under high temperature. It is also found that the saturation magnetization （Ms） of the films increases with the temperature. As the content of the Fe2O3 increases, when the content of the Fe2O3 is around 30wt%, the Ms of the films has a maximum value.展开更多
[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied...[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO]FePt]5/Ag films are changed into L10 and （111） mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controlling SiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 （0.6 nm）/FePt （3 nm）]5/Ag （50 nm） films and highly （001）-oriented films can be obtained in the [SiO2 （2 nm）/FePt （3 nm）]5/Ag （50 nm） films.展开更多
PS/SiO2 particles with core-shell structure were synthesized by coating silica on surface of polystyrene(PS) colloidal particles.The reaction parameters,such as initial tetraethyl orthosilicate(TEOS) concentration,wat...PS/SiO2 particles with core-shell structure were synthesized by coating silica on surface of polystyrene(PS) colloidal particles.The reaction parameters,such as initial tetraethyl orthosilicate(TEOS) concentration,water concentration and reaction temperature,have been investigated to control the thickness of silica shells.The shell thickness was prepositional to the square root of the initial concentration of TEOS and first increased with increasing water concentration,reached a maximum at about 2.0 mol/L and then started decreasing beyond that concentration.It was also found that the shell thickness decreased firstly with the reaction temperature added,then tended to a constant.The so-synthesized PS/SiO2 core-shell particles were directly crystallized into 3-D ordered thin film,then sintered at 570℃ into the ordered macroporous thin film.Compared with the conditional method,the present approach avoids repeatedly filling the precursor in the templetes and save time more.展开更多
Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships amon...Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.展开更多
The protective AR(anti-reflection) film of infrared wavelength is an important optical film used in army field.The design and preparation of SiO2 film used for protection and avoiding-reflection in IR wavelength are d...The protective AR(anti-reflection) film of infrared wavelength is an important optical film used in army field.The design and preparation of SiO2 film used for protection and avoiding-reflection in IR wavelength are discussed in this article.In order to resolve the problem of water absorbing in 2900nm,we prepared the film by Ion Beam Assisted Deposition (IBAD) and annealed it after preparation.At last,we get a good SiO2 film deposited on big spherical surface,which has very good optical and mechanical character.展开更多
Nano metal-particle dispersed glasses are the attractive candidates for nonlinear optical material applications. Au/SiO2 nano-composite thin films with 3 vol% to 65 vol% Au are prepared by inductively coupled plasma s...Nano metal-particle dispersed glasses are the attractive candidates for nonlinear optical material applications. Au/SiO2 nano-composite thin films with 3 vol% to 65 vol% Au are prepared by inductively coupled plasma sputtering. Au particles as perfect spheres with diameters between 10 nm and 30 nm are uniformly dispersed in the SiO2 matrix. Optical absorption peaks due to the surface plasmon resonance of Au particles are observed. The absorption property is enhanced with the increase of Au content, showing a maximum value in the films with 37 vol% Au. The absorption curves of the Au/SiO2 thin films with 3 vol% to 37 vol% Au accord well with the theoretical optical absorption spectra obtained from Mie resonance theory. Increasing Au content over 37 vol% results in the partial connection of Au particles, whereby the intensity of the absorption peak is weakened and ultimately replaced by the optical absorption of the bulk. The band gap decreases with Au content increasing from 3 vol% to 37 vol % but increases as Au content further increases.展开更多
By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon ...By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon monocrystal under dry oxygen atmosphere at 1100℃.Compared with their oxidation kinetic curves consisted of three stages,we suggested a mechanism on forming silicon oxide film.According to electron and X-ray diffraction analyses the silicon oxide films consisted of silica with different crystal structure.We also have discussed a stacking fault and a dislocation formed in the Si-Sio_2 interface region simulaneously forming silicon oxide film.展开更多
After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature（~240°C）, larger crystallization activation energy（6.22 e V）, and better data...After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature（~240°C）, larger crystallization activation energy（6.22 e V）, and better data retention ability（189°C for 10 y）. The crystallization of Sb in superlattice-like Sb/SiO_2 thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb（3 nm）/SiO_2（7 nm）-based phase change memory cell. A lower operation power consumption of 0.09 m W and a good endurance of 3.0 × 10~6 cycles are achieved. In addition, the superlattice-like Sb（3 nm）/SiO_2（7 nm） thin film shows a low thermal conductivity of 0.13 W/（m·K）.展开更多
Microwave electron cyclotron resonance plasma enhanced chemical vapor depositionwas used to grow silicon dioxide films on crystalline silicon substrate for planar optical waveguides.The relationship between plasma par...Microwave electron cyclotron resonance plasma enhanced chemical vapor depositionwas used to grow silicon dioxide films on crystalline silicon substrate for planar optical waveguides.The relationship between plasma parameters and deposition rates was investigated, and the influ-ence of radio frequency substrate bias on properties of SiO2 films was also preliminarily studied.X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, scanning electron mi-croscopy, atomic force microscopy and elllipsometry were used to characterize the deposited films,showing that SiO2 films with good structural and optical properties prepared at low temperaturehave been achieved. They can basically meet the requirements of integrated optical waveguides.展开更多
The dynamic wetting of water spreading on TiO 2 and TiO 2 SiO 2 films prepared by sol gel method and subsequently treated by air plasma and UV irradiation was investigated. Water completely spread on TiO 2 surface wit...The dynamic wetting of water spreading on TiO 2 and TiO 2 SiO 2 films prepared by sol gel method and subsequently treated by air plasma and UV irradiation was investigated. Water completely spread on TiO 2 surface within 3 s and its dynamic contact angles can be expressed by a power law θ d= k(t+a) -n with the n value 0.98. Less than 50%(molar fraction) SiO 2 addition can accelerate the dynamic water spreading rate on the TiO 2 SiO 2 films and the optimum molar fraction of SiO 2 amount corresponding to as annealed, air plasma, and UV irradiation treatment process is 15%, 10% and 20%, respectively.展开更多
基金Funded by the Innovative Program of Shanghai Municipal Education Commission (No.08YZ97)the National Natural Science Foundation of China (No.10704048)
文摘Fe2O3/SiO2 nano-composite films were prepared by sol-gel technique combining heat treatment in the range of 100-900 ℃. The particle size was observed by FE-SEM. Optical properties of the films were investigated by UV-visible spectra. Structural and magnetic characteristics were investigated through FT-IR and VSM. The transparency of the Fe2O3/SiO2 nano-composite films decreased with the content of the Fe2O3. Water and organic solvent in the films were evaporated with heat treatment, so the transparency of the films was enhanced under high temperature. It is also found that the saturation magnetization （Ms） of the films increases with the temperature. As the content of the Fe2O3 increases, when the content of the Fe2O3 is around 30wt%, the Ms of the films has a maximum value.
基金Project(10574085) supported by the National Natural Science Foundation of ChinaProject(207020) supported by the Science Technology Key Project of the Ministry of Education, China
文摘[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO]FePt]5/Ag films are changed into L10 and （111） mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controlling SiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 （0.6 nm）/FePt （3 nm）]5/Ag （50 nm） films and highly （001）-oriented films can be obtained in the [SiO2 （2 nm）/FePt （3 nm）]5/Ag （50 nm） films.
基金Supported by the National Natural Science Foundation of China(No.:20221603)
文摘PS/SiO2 particles with core-shell structure were synthesized by coating silica on surface of polystyrene(PS) colloidal particles.The reaction parameters,such as initial tetraethyl orthosilicate(TEOS) concentration,water concentration and reaction temperature,have been investigated to control the thickness of silica shells.The shell thickness was prepositional to the square root of the initial concentration of TEOS and first increased with increasing water concentration,reached a maximum at about 2.0 mol/L and then started decreasing beyond that concentration.It was also found that the shell thickness decreased firstly with the reaction temperature added,then tended to a constant.The so-synthesized PS/SiO2 core-shell particles were directly crystallized into 3-D ordered thin film,then sintered at 570℃ into the ordered macroporous thin film.Compared with the conditional method,the present approach avoids repeatedly filling the precursor in the templetes and save time more.
文摘Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.
文摘The protective AR(anti-reflection) film of infrared wavelength is an important optical film used in army field.The design and preparation of SiO2 film used for protection and avoiding-reflection in IR wavelength are discussed in this article.In order to resolve the problem of water absorbing in 2900nm,we prepared the film by Ion Beam Assisted Deposition (IBAD) and annealed it after preparation.At last,we get a good SiO2 film deposited on big spherical surface,which has very good optical and mechanical character.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 50842028 and 50972012)the National Basic Research Program of China (Grant No 2007CB613301)
文摘Nano metal-particle dispersed glasses are the attractive candidates for nonlinear optical material applications. Au/SiO2 nano-composite thin films with 3 vol% to 65 vol% Au are prepared by inductively coupled plasma sputtering. Au particles as perfect spheres with diameters between 10 nm and 30 nm are uniformly dispersed in the SiO2 matrix. Optical absorption peaks due to the surface plasmon resonance of Au particles are observed. The absorption property is enhanced with the increase of Au content, showing a maximum value in the films with 37 vol% Au. The absorption curves of the Au/SiO2 thin films with 3 vol% to 37 vol% Au accord well with the theoretical optical absorption spectra obtained from Mie resonance theory. Increasing Au content over 37 vol% results in the partial connection of Au particles, whereby the intensity of the absorption peak is weakened and ultimately replaced by the optical absorption of the bulk. The band gap decreases with Au content increasing from 3 vol% to 37 vol % but increases as Au content further increases.
文摘By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon monocrystal under dry oxygen atmosphere at 1100℃.Compared with their oxidation kinetic curves consisted of three stages,we suggested a mechanism on forming silicon oxide film.According to electron and X-ray diffraction analyses the silicon oxide films consisted of silica with different crystal structure.We also have discussed a stacking fault and a dislocation formed in the Si-Sio_2 interface region simulaneously forming silicon oxide film.
基金Supported by the National Natural Science Foundation of China under Grant No 11774438the Natural Science Foundation of Jiangsu Province under Grant No BK20151172+2 种基金the Changzhou Science and Technology Bureau under Grant No CJ20160028the Qing Lan Project,the Opening Project of State Key Laboratory of Silicon Materials under Grant No SKL2017-04the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology of Institute of Microelectronics of Chinese Academy of Sciences
文摘After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature（~240°C）, larger crystallization activation energy（6.22 e V）, and better data retention ability（189°C for 10 y）. The crystallization of Sb in superlattice-like Sb/SiO_2 thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb（3 nm）/SiO_2（7 nm）-based phase change memory cell. A lower operation power consumption of 0.09 m W and a good endurance of 3.0 × 10~6 cycles are achieved. In addition, the superlattice-like Sb（3 nm）/SiO_2（7 nm） thin film shows a low thermal conductivity of 0.13 W/（m·K）.
文摘Microwave electron cyclotron resonance plasma enhanced chemical vapor depositionwas used to grow silicon dioxide films on crystalline silicon substrate for planar optical waveguides.The relationship between plasma parameters and deposition rates was investigated, and the influ-ence of radio frequency substrate bias on properties of SiO2 films was also preliminarily studied.X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, scanning electron mi-croscopy, atomic force microscopy and elllipsometry were used to characterize the deposited films,showing that SiO2 films with good structural and optical properties prepared at low temperaturehave been achieved. They can basically meet the requirements of integrated optical waveguides.
文摘The dynamic wetting of water spreading on TiO 2 and TiO 2 SiO 2 films prepared by sol gel method and subsequently treated by air plasma and UV irradiation was investigated. Water completely spread on TiO 2 surface within 3 s and its dynamic contact angles can be expressed by a power law θ d= k(t+a) -n with the n value 0.98. Less than 50%(molar fraction) SiO 2 addition can accelerate the dynamic water spreading rate on the TiO 2 SiO 2 films and the optimum molar fraction of SiO 2 amount corresponding to as annealed, air plasma, and UV irradiation treatment process is 15%, 10% and 20%, respectively.
