ZnO films containing Er and Ge nanocrystals(nc-Ge) were synthesized and their photoluminescence(PL) properties were studied. Visible and near-infrared PL intensities are found to be greatly increased in nc-Ge-containi...ZnO films containing Er and Ge nanocrystals(nc-Ge) were synthesized and their photoluminescence(PL) properties were studied. Visible and near-infrared PL intensities are found to be greatly increased in nc-Ge-containing film. Er-related 1.54 μm emission has been investigated under several excitation conditions upon different kinds of Ge, Er codoped ZnO thin films. 1.54 μm PL enhancement accompanied by the appearance of nc-Ge implies a significant correlation between nc-Ge and PL emission of Er^(3+). The increased intensity of 1.54 μm in Ge:Er:ZnO film is considered to come from the joint effect of the local potential distortion around Er^(3+)and the possibleenergy transfer from nc-Ge to Er^(3+).展开更多
基金National Natural Science Foundation of China(NSFC)(11475105)
文摘ZnO films containing Er and Ge nanocrystals(nc-Ge) were synthesized and their photoluminescence(PL) properties were studied. Visible and near-infrared PL intensities are found to be greatly increased in nc-Ge-containing film. Er-related 1.54 μm emission has been investigated under several excitation conditions upon different kinds of Ge, Er codoped ZnO thin films. 1.54 μm PL enhancement accompanied by the appearance of nc-Ge implies a significant correlation between nc-Ge and PL emission of Er^(3+). The increased intensity of 1.54 μm in Ge:Er:ZnO film is considered to come from the joint effect of the local potential distortion around Er^(3+)and the possibleenergy transfer from nc-Ge to Er^(3+).
