The wide-bandgap semiconductor material Ga_(2)O_(3) exhibits great potential in solar-blind deep-ultraviolet(DUV)photodetection applications,including none-line-of-sight secure optical communication,fire warning,high-...The wide-bandgap semiconductor material Ga_(2)O_(3) exhibits great potential in solar-blind deep-ultraviolet(DUV)photodetection applications,including none-line-of-sight secure optical communication,fire warning,high-voltage electricity monitoring,and maritime fog dispersion navigation.However,Ga_(2)O_(3) photodetectors have traditionally faced challenges in achieving both high responsivity and fast response time,limiting their practical application.Herein,the Ga_(2)O_(3) solar-blind DUV photodetectors with a suspended structure have been constructed for the first time.The photodetector exhibits a high responsivity of 1.51×10^(10) A/W,a sensitive detectivity of 6.01×10^(17) Jones,a large external quantum efficiency of 7.53×10^(12)%,and a fast rise time of 180 ms under 250-nm illumination.Notably,the photodetector achieves both high responsivity and fast response time simultaneously under ultra-weak power intensity excitation of 0.01μW/cm^(2).This important improvement is attributed to the reduction of interface defects,improved carrier transport,efficient carrier separation,and enhanced light absorption enabled by the suspended structure.This work provides valuable insights for designing and optimizing high-performance Ga_(2)O_(3) solar-blind photodetectors.展开更多
基金support from the China Postdoctoral Science Foundation(2023M742732)the Postdoctoral Fellowship Program of CPSF under grant number GZC20241303+3 种基金the Fundamental Research Funds for the Central Universities(XJSJ24100)the National Key R&D Program of China(2023YFB4402303)the National Natural Science Foundation of China(grant nos.62404176,62025402,62090033,92364204,9226420,and 62293522)Major Program of Zhejiang Natural Science Foundation(grant no.LDT23F04024F04).
文摘The wide-bandgap semiconductor material Ga_(2)O_(3) exhibits great potential in solar-blind deep-ultraviolet(DUV)photodetection applications,including none-line-of-sight secure optical communication,fire warning,high-voltage electricity monitoring,and maritime fog dispersion navigation.However,Ga_(2)O_(3) photodetectors have traditionally faced challenges in achieving both high responsivity and fast response time,limiting their practical application.Herein,the Ga_(2)O_(3) solar-blind DUV photodetectors with a suspended structure have been constructed for the first time.The photodetector exhibits a high responsivity of 1.51×10^(10) A/W,a sensitive detectivity of 6.01×10^(17) Jones,a large external quantum efficiency of 7.53×10^(12)%,and a fast rise time of 180 ms under 250-nm illumination.Notably,the photodetector achieves both high responsivity and fast response time simultaneously under ultra-weak power intensity excitation of 0.01μW/cm^(2).This important improvement is attributed to the reduction of interface defects,improved carrier transport,efficient carrier separation,and enhanced light absorption enabled by the suspended structure.This work provides valuable insights for designing and optimizing high-performance Ga_(2)O_(3) solar-blind photodetectors.
