The electromagnetic wave absorption of silicon carbide nanowires is improved by their uniform and diverse cross-structures.This study introduces a sustainable and high value-added method for synthesizing silicon carbi...The electromagnetic wave absorption of silicon carbide nanowires is improved by their uniform and diverse cross-structures.This study introduces a sustainable and high value-added method for synthesizing silicon carbide nanowires using lignite and waste silicon powder as raw materials through carbothermal reduction.The staggered structure of nanowires promotes the creation of interfacial polarization,impedance matching,and multiple loss mechanisms,leading to enhanced electromagnetic absorption performance.The silicon carbide nanowires demonstrate outstanding electromagnetic absorption capabilities with the minimum reflection loss of-48.09 d B at10.08 GHz and an effective absorption bandwidth(the reflection loss less than-10 d B)ranging from 8.54 to 16.68 GHz with a thickness of 2.17 mm.This research presents an innovative approach for utilizing solid waste in an environmentally friendly manner to produce broadband silicon carbide composite absorbers.展开更多
A polarization-sensitive and flexible photodetector was fabricated through the precise alignment of perovskite nanowires(NWs)using a brush coating technique.The alignment of the NWs was meticulously examined,consideri...A polarization-sensitive and flexible photodetector was fabricated through the precise alignment of perovskite nanowires(NWs)using a brush coating technique.The alignment of the NWs was meticulously examined,considering various chemical properties of the solvent,such as boiling point,viscosity,and surface tension.Notably,when the NWs were brush-coated with toluene dispersion,the NWs were aligned in higher order than those processed from octane dispersion.The degree of alignment was correlated with the photodetector property.Especially,the well-aligned NW photodetector exhibited a two-fold disparity in current response contingent on the polarization direction.Furthermore,even after enduring 500 bending cycles,the device retained 80%of its photodetector performance.This approach underscores the potential of solution-processed flexible photodetectors for advanced optical applications under dynamic operating conditions.展开更多
Anti-phase domain defects easily form in the in-plane GaAs nanowires(NWs)grown on CMOS-compatiblegroup IV substrates,which makes it difficult to obtain GaAs NWs with a designed length and also leads to asignificant li...Anti-phase domain defects easily form in the in-plane GaAs nanowires(NWs)grown on CMOS-compatiblegroup IV substrates,which makes it difficult to obtain GaAs NWs with a designed length and also leads to asignificant limitation in the growth of high-quality in-plane GaAs NW networks on such substrates.Here,wereport on the selective area growth of anti-phase domain-free in-plane GaAs NWs and NW networks on Ge(111)substrates.Detailed structural studies confirm that the GaAs NW grown using a large pattern period and GaAsNW networks grown by adding the Sb are both high-quality pure zinc-blende single crystals free of stackingfaults,twin defects,and anti-phase domain defects.Room-temperature photoluminescence measurements show asubstantial improvement in crystal quality and good consistency and uniformity of the GaAs NW networks.Ourwork provides useful insights into the controlled growth of high-quality anti-phase domain-defects-free in-planeIII-V NWs and NW networks.展开更多
Silicon nanowires(SiNWs)have been used in a wide variety of applications over the past few decades due to their excellent material properties.The only drawback is the high production cost of SiNWs.The preparation of S...Silicon nanowires(SiNWs)have been used in a wide variety of applications over the past few decades due to their excellent material properties.The only drawback is the high production cost of SiNWs.The preparation of SiNWs from photovoltaic waste silicon(WSi)powders,which are high-volume industrial wastes,not only avoids the secondary energy consumption and environmental pollution caused by complicated recycling methods,but also realizes its high-value utilization.Herein,we present a method to rapidly convert photovoltaic WSi powders into SiNWs products.The flash heating and quenching provided by carbothermal shock induce the production of free silicon atoms from the WSi powders,which are rapidly reorganized and assembled into SiNWs during the vapor-phase process.This method allows for the one-step composite of SiNWs and carbon cloth(CC)and the formation of SiC at the interface of the silicon(Si)and carbon(C)contact to create a stable chemical connection.The obtained SiNWs-CC(SiNWs@CC)composites can be directly used as lithium anodes,exhibiting high initial coulombic efficiency(86.4%)and stable cycling specific capacity(2437.4 mA h g^(-1)at 0.5 A g^(-1)after 165 cycles).In addition,various SiNWs@C composite electrodes are easily prepared using this method.展开更多
Due to excellent thermal insulation performance at room temperature and ultralow density,silica aero-gels are candidates for thermal insulation.However,at high temperatures,the thermal insulation prop-erty of silica a...Due to excellent thermal insulation performance at room temperature and ultralow density,silica aero-gels are candidates for thermal insulation.However,at high temperatures,the thermal insulation prop-erty of silica aerogels decreased greatly caused by transparency to heat radiation.Opacifiers introduced into silica sol can block heat radiation yet destroy the uniformity of aerogels.Herein,we designed and prepared a silica aerogel composite with oriented and layered silica fibers(SFs),SiC nanowires(SiC_(NWs)),and silica aerogels,which were prepared by papermaking,chemical vapor infiltration(CVI),and sol-gel respectively.Firstly,oriented and layered SFs made still air a wall to block heat transfer by the solid phase.Secondly,SiC_(NWs) were grown in situ on the surface of SFs evenly to weave into the network,and the network reduced the gaseous thermal conductivity by dividing cracks in SFs/SiC_(NWs)/SA.Thirdly,SiC_(NWs) weakened the heat transfer by radiation at high temperatures.Therefore,SFs/SiC_(NWs)/SA presented remarkable thermal insulation(0.017 W(m K)^(-1) at 25℃,0.0287 W(m K)^(-1) at 500℃,and 0.094 W(m K)^(-1) at 1000℃).Besides,SFs/SiC_(NWs)/SA exhibited remarkable thermal stability(no size transform after being heat treated at 1000℃ for 1800 s)and tensile strength(0.75 MPa).These integrated properties made SFs/SiC_(NWs)/SA a promising candidate for highly efficient thermal insulators.展开更多
InAsN nanowires on InAs stems were obtained using plasma-assisted molecular beam epitaxy on a SiOx/Si(111)sub-strate.Also,heterostructured InAs/InAsN and InAsN/InP nanowires were grown in the core/shell geometry.In th...InAsN nanowires on InAs stems were obtained using plasma-assisted molecular beam epitaxy on a SiOx/Si(111)sub-strate.Also,heterostructured InAs/InAsN and InAsN/InP nanowires were grown in the core/shell geometry.In the low-temperature photoluminescence spectra of the grown structures,spectral features are observed that correspond to the polytypic structure of nanowires with a predominance of the wurtzite phase and parasitic islands of the sphalerite phase.It was shown that the interband photoluminescence spectral features of InAsN nanowires experience a red shift relative to the pristine InAs nanowires.The incorporation of nitrogen reduces the bandgap by splitting the conduction band into two subbands.The position of the spectral features in the photoluminescence spectra confirms the formation of a nitride solid solution with a poly-typic hexagonal structure,having a concentration of nitrogen atoms of up to 0.7%.Additional passivation of the nanowire surface with InP leads to a decrease in the intensity of nonradiative recombination and an improvement in the photoluminescent response of the nanowires,which makes it possible to detect photoluminescence emission at room temperature.Thus,by changing the composition and morphology of nanowires,it is possible to control their electronic structure,which allows varying the operating range of detectors and mid-IR radiation sources based on them.展开更多
Silver nanowires(Ag NWs)have promising application potential in electronic displays because of their superior flexibility and transparency.Doping Ni in Ag NWs has proven to be an effective strategy to im-prove its wor...Silver nanowires(Ag NWs)have promising application potential in electronic displays because of their superior flexibility and transparency.Doping Ni in Ag NWs has proven to be an effective strategy to im-prove its work function.However,AgNi NWs-based electrodes suffer from poor electrical conductivity under air exposure due to the low-conductivity NiO generated on its surface.Here,Cu was further doped in AgNi NWs to form AgNiCu NWs and regulate its surface oxide under long-term air exposure.Finally,it is demonstrated that the conductivity of AgNiCu NWs can acquire an improved tolerable tempera-ture(over 240℃)and prolonged high-temperature tolerance time(over 150 min)by finely regulating the doping content Cu,indicating an enhanced air-stable conductivity.The optimized AgNiCu NWs also achieve superior transparent conductivity as pure Ag NWs and high work function as AgNi NWs,which has been successfully applied in constructing an n-type photodiode with an effective rectification effect.展开更多
The emergence of cesium lead halide perovskite materials stable at air opened new prospects for the optoelectronic industry.In this work we present an approach to fabricating a flexible green perovskite light-emitting...The emergence of cesium lead halide perovskite materials stable at air opened new prospects for the optoelectronic industry.In this work we present an approach to fabricating a flexible green perovskite light-emitting electrochemical cell(PeLEC)with a CsPbBr_(3)perovskite active layer using a highly-ordered silicon nanowire(Si NW)array as a distributed electrode integrated within a thin polydimethylsiloxane film(PDMS).Numerical simulations reveal that Si NWs-based distributed electrode aids the improvement of carrier injection into the perovskite layer with an increased thickness and,therefore,the enhancement of light-emitting performance.The X-ray diffraction study shows that the perovskite layer synthesized on the PDMS membrane with Si NWs has a similar crystal structure to the ones synthesized on planar Si wafers.We perform a comparative analysis of the light-emitting devices’properties fabricated on rigid silicon substrates and flexible Si NW-based membranes released from substrates.Due to possible potential barriers in a flexible PeLEC between the bottom electrode(made of a network of single-walled carbon nanotube film)and Si NWs,the electroluminescence performance and Ⅰ-V properties of flexible devices deteriorated compared to rigid devices.The developed PeLECs pave the way for further development of inorganic flexible uniformly light-emitting devices with improved properties.展开更多
Electrochemical reduction of carbon dioxide(CO_(2)RR)is a promising approach to complete the carbon cycle and potentially convert CO_(2)into valuable chemicals and fuels.Cu is unique among transition metals in its abi...Electrochemical reduction of carbon dioxide(CO_(2)RR)is a promising approach to complete the carbon cycle and potentially convert CO_(2)into valuable chemicals and fuels.Cu is unique among transition metals in its ability to catalyze the CO_(2)RR and produce multi-carbon products.However,achieving high selectivity for C2+products is challenging for copper-based catalysts,as C–C coupling reactions proceed slowly.Herein,a surface modification strategy involving grafting long alkyl chains onto copper nanowires(Cu NWs)has been proposed to regulate the electronic structure of Cu surface,which facilitates*CO-*CO coupling in the CO_(2)RR.The hydrophobicity of the catalysts increases greatly after the introduction of long alkyl chains,therefore the hydrogen evolution reaction(HER)has been inhibited effectively.Such surface modification approach proves to be highly efficient and universal,with the Faradaic efficiency(FE)of C_(2)H_(4) up to 53%for the optimized Cu–SH catalyst,representing a significant enhancement compared to the pristine Cu NWs(30%).In-situ characterizations and theoretical calculations demonstrate that the different terminal groups of the grafted octadecyl chains can effectively regulate the charge density of Cu NWs interface and change the adsorption configuration of*CO intermediate.The top-adsorbed*CO intermediates(*COtop)on Cu–SH catalytic interface endow Cu–SH with the highest charge density,which effectively lowers the reaction energy barrier for*CO-*CO coupling,promoting the formation of the*OCCO intermediate,thereby enhancing the selectivity towards C_(2)H_(4).This study provides a promising method for designing efficient Cu-based catalysts with high catalytic activity and selectivity towards C2H4.展开更多
In recent years,the development of wafer-level GaN nanowires photocatalyst loaded onto silicon substrates has progressed rapidly depending on its simplicity of instrumentation,collection and separation from the water....In recent years,the development of wafer-level GaN nanowires photocatalyst loaded onto silicon substrates has progressed rapidly depending on its simplicity of instrumentation,collection and separation from the water.Accordingly,the wafer-level GaN-based nanowires(GaN NWs)photocatalyst can be a fabulous candidate for the application in the field of photocatalytic hydrogen evolution reaction(PHER)and provides a novel route to address the environmental and energy crisis.Herein,a range of innovative strategies to improve the performance of GaN NWs photocatalyst are systematically summarized.Then,the solar-to-hydrogen conversion efficiency,the characteristics of GaN NWs system,the cost of the origin material required,as well as the stability,activity and the corrosion resistance to seawater are discussed in detail as some of the essential conditions for advancing its large-scale industry-friendly application.Last but not least,we provide the potential application of this system for splitting seawater to produce hydrogen and point out the direction for overcoming the barriers to future industrial-scale implementation.展开更多
Herein,vacancy engineering is utilized reasonably to explore molybdenum tungsten oxide nanowires(W_(4)MoO_(3)NWs)rich in O-vacancies as an advanced electrochemical nitrogen reduction reaction(eNRR)electrocatalyst,real...Herein,vacancy engineering is utilized reasonably to explore molybdenum tungsten oxide nanowires(W_(4)MoO_(3)NWs)rich in O-vacancies as an advanced electrochemical nitrogen reduction reaction(eNRR)electrocatalyst,realizing further enhancement of NRR performance.In 0.1 mol/L Na_(2)SO_(4),W_(4)MoO_(3)NWs rich in O vacancies(CTAB-D-W_(4)MoO_(3))achieve a large NH3yield of 60.77μg h^(-1)mg^(-1)cat.at-0.70 V vs.RHE and a high faradaic efficiency of 56.42%at-0.60 V,much superior to the W_(4)MoO_(3)NWs deficient in oxygen vacancies(20.26μg h^(-1)mg^(-1)cat.and 17.1%at-0.70 V vs.RHE).Meanwhile,W_(4)MoO_(3)NWs rich in O-vacancies also show high electrochemical stability.Density functional theory(DFT)calculations present that O vacancies in CTAB-D-W_(4)MoO_(3)reduce the energy barrier formed by the intermediate of^(*)N-NH,facilitate the activation and further hydrogenation of^(*)N-N,promote the NRR process,and improve NRR activity.展开更多
Ga_(2)O_(3) is considered a potential anode material for next-generation lithium-ion batteries due to its high theoretical capacity and unique self-healing capability.To develop a novel preparation method and in-depth...Ga_(2)O_(3) is considered a potential anode material for next-generation lithium-ion batteries due to its high theoretical capacity and unique self-healing capability.To develop a novel preparation method and in-depth understanding of the electrochemical reaction mechanism of Ga_(2)O_(3),a brand-new liquid-liquid dealloying strategy was exploited to construct porous α-Ga_(2)O_(3) nanowire networks.Profiting from the well-designed porous structure,the material exhibits impressive cycling stability of a reversible capacity of 603.9 mA·h/g after 200 cycles at 1000 mA/g and a capacity retention of 125.2 mA·h/g after 100 cycles at 0.5C when assembling to Ga_(2)O_(3)//LiFePO_(4) full cells.The lithiation/delithiation reaction mechanism of the porous Ga_(2)O_(3) anodes is further revealed by ex-situ Raman,XRD,TEM measurements,and density functional theoretical(DFT)calculations,which establishes a correlation between the electrochemical performance and the phase transition fromα-Ga_(2)O_(3) to β-Ga_(2)O_(3) during cycling.展开更多
High-entropy carbides are increasingly favored as electromagnetic wave-absorbing materials because of their customizable structures and distinctive high-entropy effects.Nonetheless,the influence of entropy changes on ...High-entropy carbides are increasingly favored as electromagnetic wave-absorbing materials because of their customizable structures and distinctive high-entropy effects.Nonetheless,the influence of entropy changes on the absorptive characteristics of high-entropy carbide ceramics remains underexplored.In this work,the impact of increased entropy on the absorption characteristics of stable high-entropy transition metal carbides has been systematically studied.This work prepared three carbides ceramics with different entropy values:(Mo_(1/3)Nb_(1/3)Ta_(1/3))C,(Ti_(1/4)Mo_(1/4)Nb_(1/4)Ta_(1/4))C,and(Zr_(1/5)Ti_(1/5)Mo_(1/5)Nb_(1/5)Ta_(1/5))C.The impact of entropy variation in high-entropy carbide nanowires on their wave-absorbing properties was studied.The results showed excellent electromagnetic wave absorption,achieving a minimum reflection loss of−50.08 dB at 1.8 mm,and demonstrating an effective absorption bandwidth of 4.675 GHz at 1.7 mm.In addition,through detailed structure,morphology,and chemical state characterization,as well as wave absorption capability testing,research indicates that high-entropy carbides can effectively regulate defects by adjusting the size of entropy,leading to lattice distortion,discontinuous lattice fringes,and vacancies.The presence of these defects enhances the polarization loss and balances the excessively high dielectric constant of high-entropy carbide ceramics.Additionally,the design of one-dimensional structures facilitates carrier migration,thereby increasing conductive loss.Collectively,these factors enhance the ability of the samples to attenuate electromagnetic waves.This study lays a theoretical foundation and provides experimental guidance for developing new high-performance materials for electromagnetic wave absorption.展开更多
The solid solution formed by the combination of multiple cations has been extensively investigated due to its distinctive lattice distortion effect,which imparts unique electromagnetic properties.In particular,the reg...The solid solution formed by the combination of multiple cations has been extensively investigated due to its distinctive lattice distortion effect,which imparts unique electromagnetic properties.In particular,the regulation of dielectric and magnetic properties can be achieved through element selection.Herein,the stability of Ta_(x)Nb_(1-x)C was predicted through geometric optimization of crystal structure,and Ta_(x)Nb_(1-x)C nanowires were successfully synthesized through F-ion-assisted carbothermal reduction method.The introduction of bimetallic ions forms significant carbon defects and lattice distortion,which undoubtedly induces the formation of strong interface polarization and defect polarization,resulting in high dielectric loss.Furthermore,the significant presence of imperfections leads to a decrease in both the dielectric constant and conductivity,thereby achieving impedance balance.The design of a one-dimensional structure also facilitates the formation of conductive pathways,promoting carrier transitions.Benefiting from a variety of loss mechanisms and appropriate impedance matching,solid solution Ta_(x)Nb_(1-x)C shows excellent electromagnetic wave absorption(EWA)performance.This research presents a promising strategy for developing single-phase materials with excellent EWA performance.展开更多
SiC nanowires were prepared on C/C composite surface without catalyst by chemical vapor deposition（CVD） using CH3 SiCl3 as precursor.SEM images of the CVD-product reveal that some long nanowires have grown to tens o...SiC nanowires were prepared on C/C composite surface without catalyst by chemical vapor deposition（CVD） using CH3 SiCl3 as precursor.SEM images of the CVD-product reveal that some long nanowires have grown to tens of micrometers with some gathered as a ball.Some short nanowires agglomerate like chestnut shell with many thorns accompanied by some deposited nano-particles.XRD,Raman-spectrum and FTIR patterns indicate that the product is a typical β-SiC.TEM images show that the nanowires have a wide diameter range from 10 to 100 nm,and some thin nanowires are bonded to the thick one by amorphous CVD-SiC.A SiC branch generates from an amorphous section of a thick one with an angle of 70° between them,which is consistent with the [111] axis stacking angle of the crystal.SAED and fast Fourier transform（FFT） patterns reveal that the nanowires can grow along with different axes,and the bamboo-nodes section is full of stacking faults and twin crystal.The twisted SiC lattice planes reveal that the screw dislocation growth is the main mechanism for the CVD-SiC nanowires.展开更多
Based on the EAM potential, a molecular dynamics study on the tensile properties of ultrathin nickel nanowires in the （100〉 orientation with diameters of 3.94, 4.95 and 5.99 nm was presented at different temperature...Based on the EAM potential, a molecular dynamics study on the tensile properties of ultrathin nickel nanowires in the （100〉 orientation with diameters of 3.94, 4.95 and 5.99 nm was presented at different temperatures and strain rates. The temperature and strain rate dependences of tensile properties were investigated. The simulation results show that the elastic modulus and the yield strength are gradually decreasing with the increase of temperature, while with the increase of the strain rate, the stress--strain curves fluctuate more intensely and the ultrathin nickel nanowires rupture at one smaller and smaller strain. At an ideal temperature of 0.01 K, the yield strength of the nanowires drops rapidly with the increase of strain rate, and at other temperatures the strain rate has a little influence on the elastic modulus and the yield strength. Finally, the effects of size on the tensile properties of ultrathin nickel nanowires were briefly discussed.展开更多
ZnO nanowire arrays are fabricated on anodized aluminum oxide templates with electric field-assisted electrochemical technology. Transmission electron microscopy results indicate that the nanowires are straight and un...ZnO nanowire arrays are fabricated on anodized aluminum oxide templates with electric field-assisted electrochemical technology. Transmission electron microscopy results indicate that the nanowires are straight and uniform. X-ray diffraction patterns indicate that the nanowires are highly oriented. The result of selected area electron diffraction suggests that the nanowires are single crystals. The photoluminescence spectrum presents a broad-band luminescence in the region of 350-650nm. The effect of the assisted transverse electric field on the growth process of ZnO nanowires is also discussed.展开更多
Diamond,an ultrawide-bandgap semiconductor material,is promising for solar-blind ultraviolet photodetectors in extreme environments.However,when exposed to high-temperature conditions,diamond photodetector surfaces ar...Diamond,an ultrawide-bandgap semiconductor material,is promising for solar-blind ultraviolet photodetectors in extreme environments.However,when exposed to high-temperature conditions,diamond photodetector surfaces are unavoidably terminated with oxygen,leading to low photoresponsivity.To address this limitation,single-crystalline diamond nanowires(DNWs)embedded with platinum(Pt)nanoparticles were developed using Pt film deposition followed by chemical vapor deposition(CVD)homoepitaxial growth.During the CVD,Pt nanoparticles(approximately 20 nm in diameter)undergo dewetting and become uniformly embedded within the single-crystalline DNWs.Photodetectors fabricated with these Pt nanoparticles-embedded DNWs achieve a responsivity of 68.5 A W^(−1) under 220 nm illumination at room temperature,representing an improvement of approximately 2000 times compared to oxygen-terminated bulk diamond devices.Notably,the responsivity further increases with temperature,reaching an exceptional value of 3098.7 A W^(−1) at 275℃.This outstanding performance is attributed to the synergistic effects of the one-dimensional nanowire structure,deep-level defects,the localized surface plasmon resonance effects induced by embedded Pt nanoparticles,and localized Schottky junctions at the Pt/diamond interface,which enhance optical absorption,carrier generation,and separation efficiency.These results highlight the significant potential of Pt nanoparticles-embedded DNWs for advanced deep ultraviolet detection in harsh environments,including aerospace,industrial monitoring,and other applications.展开更多
Confining particles in one-dimensional(1D)systems profoundly modifies their electronic behaviors,which have been extensively demonstrated in carbon nanotubes and atomic chains.Structural instabilities and electron loc...Confining particles in one-dimensional(1D)systems profoundly modifies their electronic behaviors,which have been extensively demonstrated in carbon nanotubes and atomic chains.Structural instabilities and electron localizations often dominate the conductivity of 1D nanowires.Here,we successfully grew Bi single nanowires and nanowire arrays on Pb-√7×√3substrates via molecular beam epitaxy,both of which exhibit metallic behavior.Using scanning tunneling microscopy and first-principles density functional theory calculations,the interwire coupling and the correlation between nanowire bundles and electronic properties are investigated.A characteristic peak at 0.75 e V is observed on single wires and wire bundles of up to four nanowires,whereas interwire coupling weakens it and makes it disappear for wire bundles of five and above.These findings illustrate that the interwire coupling plays a critical role in the electronic structure of the1D system,which provides insights for the design of nano-electronics materials.展开更多
Semitransparent organic photovoltaics(ST-OPVs)for building integration represent a pivotal direction in the development of photovoltaic industry.Solution-processed silver nanowires(AgNWs)are considered promising candi...Semitransparent organic photovoltaics(ST-OPVs)for building integration represent a pivotal direction in the development of photovoltaic industry.Solution-processed silver nanowires(AgNWs)are considered promising candidates for transparent electrodes in semitransparent devices due to their high transparency-conductivity-efficiency merit,large-scale processability,and low cost.In this work,we develop two solution-processed organic–inorganic hybrid electrodes,named AgNWs-PD and AgNWsPC,utilizing AgNWs as the conductive framework and aliphatic amine-functionalized perylene-diimide(PDINN)as the sandwiched material,while AgNWs-PC exhibits significantly improved electrical conductivity and enhanced contact area with the underlying electron transport layer.The optimized device achieves a power conversion efficiency of 9.45%with an open circuit voltage of 0.846 V,a high filling factor of 75.4%,and an average visible transmittance(AVT)of 44.0%,delivering an outstanding light utilization efficiency(LUE)of 4.16%,which is the highest reported value for all solution-processed ST-OPVs.In addition,by coupling a 30-nm tellurium dioxide atop AgNWs-PC,the bifaciality factor of derivative devices improves from 73.7%to 99.4%,while maintaining a high bifacial LUE over 3.7%.Our results emphasize the superiority and effectiveness of PDINN-sandwiched AgNWs electrodes for highperformance and all solution-processed ST-OPVs.展开更多
基金supported by the National Natural Science Foundation of China(No.52436008)the Inner Mongolia Science and Technology Projects,China(Nos.JMRHZX20210003 and 2023YFCY0009)+3 种基金the Huaneng Group Co Ltd.,China(No.HNKJ23-H50)the National Natural Science Foundation of China(No.22408044)the China Postdoctoral Science Foundation(No.2024M761877)the National Key R&D Program of China(No.SQ2024YFD2200039)。
文摘The electromagnetic wave absorption of silicon carbide nanowires is improved by their uniform and diverse cross-structures.This study introduces a sustainable and high value-added method for synthesizing silicon carbide nanowires using lignite and waste silicon powder as raw materials through carbothermal reduction.The staggered structure of nanowires promotes the creation of interfacial polarization,impedance matching,and multiple loss mechanisms,leading to enhanced electromagnetic absorption performance.The silicon carbide nanowires demonstrate outstanding electromagnetic absorption capabilities with the minimum reflection loss of-48.09 d B at10.08 GHz and an effective absorption bandwidth(the reflection loss less than-10 d B)ranging from 8.54 to 16.68 GHz with a thickness of 2.17 mm.This research presents an innovative approach for utilizing solid waste in an environmentally friendly manner to produce broadband silicon carbide composite absorbers.
基金supported by a Commercialization Promotion Agency for R&D Outcomes(COMPA)Grant funded by the Korean Government(Ministry of Science and ICT)(No.RS-2023-00304743)the National Research Foundation of Korea(NRF)Grant funded by the Korean Government(MSIT)(No.2022M3J7A1066428)"Regional Innovation Strategy(RIS)"through the National Research Foundation of Korea(NRF)funded by the Ministry of Education(MOE)(No.2023RIS-008).
文摘A polarization-sensitive and flexible photodetector was fabricated through the precise alignment of perovskite nanowires(NWs)using a brush coating technique.The alignment of the NWs was meticulously examined,considering various chemical properties of the solvent,such as boiling point,viscosity,and surface tension.Notably,when the NWs were brush-coated with toluene dispersion,the NWs were aligned in higher order than those processed from octane dispersion.The degree of alignment was correlated with the photodetector property.Especially,the well-aligned NW photodetector exhibited a two-fold disparity in current response contingent on the polarization direction.Furthermore,even after enduring 500 bending cycles,the device retained 80%of its photodetector performance.This approach underscores the potential of solution-processed flexible photodetectors for advanced optical applications under dynamic operating conditions.
基金supported by the National Natural Science Foundation of China(Grant Nos.12374459,61974138,and 92065106)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302400)+1 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB0460000)the support from the Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant Nos.2017156 and Y2021043)。
文摘Anti-phase domain defects easily form in the in-plane GaAs nanowires(NWs)grown on CMOS-compatiblegroup IV substrates,which makes it difficult to obtain GaAs NWs with a designed length and also leads to asignificant limitation in the growth of high-quality in-plane GaAs NW networks on such substrates.Here,wereport on the selective area growth of anti-phase domain-free in-plane GaAs NWs and NW networks on Ge(111)substrates.Detailed structural studies confirm that the GaAs NW grown using a large pattern period and GaAsNW networks grown by adding the Sb are both high-quality pure zinc-blende single crystals free of stackingfaults,twin defects,and anti-phase domain defects.Room-temperature photoluminescence measurements show asubstantial improvement in crystal quality and good consistency and uniformity of the GaAs NW networks.Ourwork provides useful insights into the controlled growth of high-quality anti-phase domain-defects-free in-planeIII-V NWs and NW networks.
基金partially funded by the National Natural Science Foundation of China(52074255,52274412)。
文摘Silicon nanowires(SiNWs)have been used in a wide variety of applications over the past few decades due to their excellent material properties.The only drawback is the high production cost of SiNWs.The preparation of SiNWs from photovoltaic waste silicon(WSi)powders,which are high-volume industrial wastes,not only avoids the secondary energy consumption and environmental pollution caused by complicated recycling methods,but also realizes its high-value utilization.Herein,we present a method to rapidly convert photovoltaic WSi powders into SiNWs products.The flash heating and quenching provided by carbothermal shock induce the production of free silicon atoms from the WSi powders,which are rapidly reorganized and assembled into SiNWs during the vapor-phase process.This method allows for the one-step composite of SiNWs and carbon cloth(CC)and the formation of SiC at the interface of the silicon(Si)and carbon(C)contact to create a stable chemical connection.The obtained SiNWs-CC(SiNWs@CC)composites can be directly used as lithium anodes,exhibiting high initial coulombic efficiency(86.4%)and stable cycling specific capacity(2437.4 mA h g^(-1)at 0.5 A g^(-1)after 165 cycles).In addition,various SiNWs@C composite electrodes are easily prepared using this method.
基金supported by the National Natural Science Foun-dation of China(Grant No.U2167214).
文摘Due to excellent thermal insulation performance at room temperature and ultralow density,silica aero-gels are candidates for thermal insulation.However,at high temperatures,the thermal insulation prop-erty of silica aerogels decreased greatly caused by transparency to heat radiation.Opacifiers introduced into silica sol can block heat radiation yet destroy the uniformity of aerogels.Herein,we designed and prepared a silica aerogel composite with oriented and layered silica fibers(SFs),SiC nanowires(SiC_(NWs)),and silica aerogels,which were prepared by papermaking,chemical vapor infiltration(CVI),and sol-gel respectively.Firstly,oriented and layered SFs made still air a wall to block heat transfer by the solid phase.Secondly,SiC_(NWs) were grown in situ on the surface of SFs evenly to weave into the network,and the network reduced the gaseous thermal conductivity by dividing cracks in SFs/SiC_(NWs)/SA.Thirdly,SiC_(NWs) weakened the heat transfer by radiation at high temperatures.Therefore,SFs/SiC_(NWs)/SA presented remarkable thermal insulation(0.017 W(m K)^(-1) at 25℃,0.0287 W(m K)^(-1) at 500℃,and 0.094 W(m K)^(-1) at 1000℃).Besides,SFs/SiC_(NWs)/SA exhibited remarkable thermal stability(no size transform after being heat treated at 1000℃ for 1800 s)and tensile strength(0.75 MPa).These integrated properties made SFs/SiC_(NWs)/SA a promising candidate for highly efficient thermal insulators.
基金the Ministry of Education and Science of the Russian Federation (state assignment No. FSEG-2023-0016) for financial support of optical studiesfinancially supported by FSRM 2023-0007 project provided by the Ministry of Education and Science of the Russian Federation.
文摘InAsN nanowires on InAs stems were obtained using plasma-assisted molecular beam epitaxy on a SiOx/Si(111)sub-strate.Also,heterostructured InAs/InAsN and InAsN/InP nanowires were grown in the core/shell geometry.In the low-temperature photoluminescence spectra of the grown structures,spectral features are observed that correspond to the polytypic structure of nanowires with a predominance of the wurtzite phase and parasitic islands of the sphalerite phase.It was shown that the interband photoluminescence spectral features of InAsN nanowires experience a red shift relative to the pristine InAs nanowires.The incorporation of nitrogen reduces the bandgap by splitting the conduction band into two subbands.The position of the spectral features in the photoluminescence spectra confirms the formation of a nitride solid solution with a poly-typic hexagonal structure,having a concentration of nitrogen atoms of up to 0.7%.Additional passivation of the nanowire surface with InP leads to a decrease in the intensity of nonradiative recombination and an improvement in the photoluminescent response of the nanowires,which makes it possible to detect photoluminescence emission at room temperature.Thus,by changing the composition and morphology of nanowires,it is possible to control their electronic structure,which allows varying the operating range of detectors and mid-IR radiation sources based on them.
基金supported by the National Natural Science Foundation of China(Nos.62374035,92263106,12061131009)the Science and Technology Commission of Shanghai Municipality(No.21520712600).
文摘Silver nanowires(Ag NWs)have promising application potential in electronic displays because of their superior flexibility and transparency.Doping Ni in Ag NWs has proven to be an effective strategy to im-prove its work function.However,AgNi NWs-based electrodes suffer from poor electrical conductivity under air exposure due to the low-conductivity NiO generated on its surface.Here,Cu was further doped in AgNi NWs to form AgNiCu NWs and regulate its surface oxide under long-term air exposure.Finally,it is demonstrated that the conductivity of AgNiCu NWs can acquire an improved tolerable tempera-ture(over 240℃)and prolonged high-temperature tolerance time(over 150 min)by finely regulating the doping content Cu,indicating an enhanced air-stable conductivity.The optimized AgNiCu NWs also achieve superior transparent conductivity as pure Ag NWs and high work function as AgNi NWs,which has been successfully applied in constructing an n-type photodiode with an effective rectification effect.
基金the Russian Science Foundation Project No.22-79-10286,https://rscf.ru/project/22-7910286/(synthesis of perovskites, PeLEC fabrication)the Russian Science Foundation Project No.23-79-01151 for NW/PDMS membrane fabrication and PeLEC characterization+1 种基金the Ministry of Science and Higher Education of the Russian Federation (Project. FZSR-2020-0007 within the framework of state task no. 075-03-2020-097/1) for the support of SWCNT synthesisthe Ministry of Science and Higher Education of the Russian Federation (Project FSRM-2022-0007) for NW fabrication
文摘The emergence of cesium lead halide perovskite materials stable at air opened new prospects for the optoelectronic industry.In this work we present an approach to fabricating a flexible green perovskite light-emitting electrochemical cell(PeLEC)with a CsPbBr_(3)perovskite active layer using a highly-ordered silicon nanowire(Si NW)array as a distributed electrode integrated within a thin polydimethylsiloxane film(PDMS).Numerical simulations reveal that Si NWs-based distributed electrode aids the improvement of carrier injection into the perovskite layer with an increased thickness and,therefore,the enhancement of light-emitting performance.The X-ray diffraction study shows that the perovskite layer synthesized on the PDMS membrane with Si NWs has a similar crystal structure to the ones synthesized on planar Si wafers.We perform a comparative analysis of the light-emitting devices’properties fabricated on rigid silicon substrates and flexible Si NW-based membranes released from substrates.Due to possible potential barriers in a flexible PeLEC between the bottom electrode(made of a network of single-walled carbon nanotube film)and Si NWs,the electroluminescence performance and Ⅰ-V properties of flexible devices deteriorated compared to rigid devices.The developed PeLECs pave the way for further development of inorganic flexible uniformly light-emitting devices with improved properties.
文摘Electrochemical reduction of carbon dioxide(CO_(2)RR)is a promising approach to complete the carbon cycle and potentially convert CO_(2)into valuable chemicals and fuels.Cu is unique among transition metals in its ability to catalyze the CO_(2)RR and produce multi-carbon products.However,achieving high selectivity for C2+products is challenging for copper-based catalysts,as C–C coupling reactions proceed slowly.Herein,a surface modification strategy involving grafting long alkyl chains onto copper nanowires(Cu NWs)has been proposed to regulate the electronic structure of Cu surface,which facilitates*CO-*CO coupling in the CO_(2)RR.The hydrophobicity of the catalysts increases greatly after the introduction of long alkyl chains,therefore the hydrogen evolution reaction(HER)has been inhibited effectively.Such surface modification approach proves to be highly efficient and universal,with the Faradaic efficiency(FE)of C_(2)H_(4) up to 53%for the optimized Cu–SH catalyst,representing a significant enhancement compared to the pristine Cu NWs(30%).In-situ characterizations and theoretical calculations demonstrate that the different terminal groups of the grafted octadecyl chains can effectively regulate the charge density of Cu NWs interface and change the adsorption configuration of*CO intermediate.The top-adsorbed*CO intermediates(*COtop)on Cu–SH catalytic interface endow Cu–SH with the highest charge density,which effectively lowers the reaction energy barrier for*CO-*CO coupling,promoting the formation of the*OCCO intermediate,thereby enhancing the selectivity towards C_(2)H_(4).This study provides a promising method for designing efficient Cu-based catalysts with high catalytic activity and selectivity towards C2H4.
基金supported by the Natural Science Foundation of China(No.51902101,22479079)Innovation Support Programme(Soft Science Research)Project Achievements of Jiangsu Province(BK20231514)+3 种基金the Youth Natural Science Foundation of Hunan Province(No.2021JJ40044)Natural Science Foundation of Jiangsu Province(No.BK20201381)Science Foundation of Nanjing University of Posts and Telecommunications(Nos.NY219144,NY221046)the National College Student Innovation and Entrepre-neurship Training Program(No.202210293083Y).
文摘In recent years,the development of wafer-level GaN nanowires photocatalyst loaded onto silicon substrates has progressed rapidly depending on its simplicity of instrumentation,collection and separation from the water.Accordingly,the wafer-level GaN-based nanowires(GaN NWs)photocatalyst can be a fabulous candidate for the application in the field of photocatalytic hydrogen evolution reaction(PHER)and provides a novel route to address the environmental and energy crisis.Herein,a range of innovative strategies to improve the performance of GaN NWs photocatalyst are systematically summarized.Then,the solar-to-hydrogen conversion efficiency,the characteristics of GaN NWs system,the cost of the origin material required,as well as the stability,activity and the corrosion resistance to seawater are discussed in detail as some of the essential conditions for advancing its large-scale industry-friendly application.Last but not least,we provide the potential application of this system for splitting seawater to produce hydrogen and point out the direction for overcoming the barriers to future industrial-scale implementation.
基金supported by the National Natural Science Foundation of China(No.51872173)Natural Science Foundation of Shandong Province(No.ZR2022JQ21)。
文摘Herein,vacancy engineering is utilized reasonably to explore molybdenum tungsten oxide nanowires(W_(4)MoO_(3)NWs)rich in O-vacancies as an advanced electrochemical nitrogen reduction reaction(eNRR)electrocatalyst,realizing further enhancement of NRR performance.In 0.1 mol/L Na_(2)SO_(4),W_(4)MoO_(3)NWs rich in O vacancies(CTAB-D-W_(4)MoO_(3))achieve a large NH3yield of 60.77μg h^(-1)mg^(-1)cat.at-0.70 V vs.RHE and a high faradaic efficiency of 56.42%at-0.60 V,much superior to the W_(4)MoO_(3)NWs deficient in oxygen vacancies(20.26μg h^(-1)mg^(-1)cat.and 17.1%at-0.70 V vs.RHE).Meanwhile,W_(4)MoO_(3)NWs rich in O-vacancies also show high electrochemical stability.Density functional theory(DFT)calculations present that O vacancies in CTAB-D-W_(4)MoO_(3)reduce the energy barrier formed by the intermediate of^(*)N-NH,facilitate the activation and further hydrogenation of^(*)N-N,promote the NRR process,and improve NRR activity.
基金the Natural Science Foundation of Hebei Province,China(No.E2023202253)Hebei Higher Education Teaching Reform Research and Practice Project,China(No.2021GJJG050).
文摘Ga_(2)O_(3) is considered a potential anode material for next-generation lithium-ion batteries due to its high theoretical capacity and unique self-healing capability.To develop a novel preparation method and in-depth understanding of the electrochemical reaction mechanism of Ga_(2)O_(3),a brand-new liquid-liquid dealloying strategy was exploited to construct porous α-Ga_(2)O_(3) nanowire networks.Profiting from the well-designed porous structure,the material exhibits impressive cycling stability of a reversible capacity of 603.9 mA·h/g after 200 cycles at 1000 mA/g and a capacity retention of 125.2 mA·h/g after 100 cycles at 0.5C when assembling to Ga_(2)O_(3)//LiFePO_(4) full cells.The lithiation/delithiation reaction mechanism of the porous Ga_(2)O_(3) anodes is further revealed by ex-situ Raman,XRD,TEM measurements,and density functional theoretical(DFT)calculations,which establishes a correlation between the electrochemical performance and the phase transition fromα-Ga_(2)O_(3) to β-Ga_(2)O_(3) during cycling.
基金sponsored by the National Natural Science Foundation of China(NSFC)(U21A2064,52202064)the Scientific Research Team Plan of Zhengzhou University of Aeronautics(23ZHTD01002)+2 种基金the International Science and Technology Cooperation Project of Henan Province(241111520800)the Science Foundation for The Excellent Youth Scholars of Henan Province(212300410089),the Henan Key Laboratory of Aeronautical Material and Technology Open Foundation(ZHKF-230101)the ZUA Innovation Fund for Graduate Education(2024CX106,2024CX124).
文摘High-entropy carbides are increasingly favored as electromagnetic wave-absorbing materials because of their customizable structures and distinctive high-entropy effects.Nonetheless,the influence of entropy changes on the absorptive characteristics of high-entropy carbide ceramics remains underexplored.In this work,the impact of increased entropy on the absorption characteristics of stable high-entropy transition metal carbides has been systematically studied.This work prepared three carbides ceramics with different entropy values:(Mo_(1/3)Nb_(1/3)Ta_(1/3))C,(Ti_(1/4)Mo_(1/4)Nb_(1/4)Ta_(1/4))C,and(Zr_(1/5)Ti_(1/5)Mo_(1/5)Nb_(1/5)Ta_(1/5))C.The impact of entropy variation in high-entropy carbide nanowires on their wave-absorbing properties was studied.The results showed excellent electromagnetic wave absorption,achieving a minimum reflection loss of−50.08 dB at 1.8 mm,and demonstrating an effective absorption bandwidth of 4.675 GHz at 1.7 mm.In addition,through detailed structure,morphology,and chemical state characterization,as well as wave absorption capability testing,research indicates that high-entropy carbides can effectively regulate defects by adjusting the size of entropy,leading to lattice distortion,discontinuous lattice fringes,and vacancies.The presence of these defects enhances the polarization loss and balances the excessively high dielectric constant of high-entropy carbide ceramics.Additionally,the design of one-dimensional structures facilitates carrier migration,thereby increasing conductive loss.Collectively,these factors enhance the ability of the samples to attenuate electromagnetic waves.This study lays a theoretical foundation and provides experimental guidance for developing new high-performance materials for electromagnetic wave absorption.
基金supported by the National Natural Science Foundation of China(NSFC)(No.U21A2064)Henan Key Laboratory of Aeronautical Material and Technology Open Foundation(No.ZHKF-230101)+1 种基金We also thank the Scientific Research Team Plan of Zhengzhou University of Aeronautics(No.23ZHTD01002)ZUA Innovation Fund for Graduate Education(No.2023CX70)for their sponsorship.
文摘The solid solution formed by the combination of multiple cations has been extensively investigated due to its distinctive lattice distortion effect,which imparts unique electromagnetic properties.In particular,the regulation of dielectric and magnetic properties can be achieved through element selection.Herein,the stability of Ta_(x)Nb_(1-x)C was predicted through geometric optimization of crystal structure,and Ta_(x)Nb_(1-x)C nanowires were successfully synthesized through F-ion-assisted carbothermal reduction method.The introduction of bimetallic ions forms significant carbon defects and lattice distortion,which undoubtedly induces the formation of strong interface polarization and defect polarization,resulting in high dielectric loss.Furthermore,the significant presence of imperfections leads to a decrease in both the dielectric constant and conductivity,thereby achieving impedance balance.The design of a one-dimensional structure also facilitates the formation of conductive pathways,promoting carrier transitions.Benefiting from a variety of loss mechanisms and appropriate impedance matching,solid solution Ta_(x)Nb_(1-x)C shows excellent electromagnetic wave absorption(EWA)performance.This research presents a promising strategy for developing single-phase materials with excellent EWA performance.
基金Project(201206375003)supported by the China Scholarship Council
文摘SiC nanowires were prepared on C/C composite surface without catalyst by chemical vapor deposition（CVD） using CH3 SiCl3 as precursor.SEM images of the CVD-product reveal that some long nanowires have grown to tens of micrometers with some gathered as a ball.Some short nanowires agglomerate like chestnut shell with many thorns accompanied by some deposited nano-particles.XRD,Raman-spectrum and FTIR patterns indicate that the product is a typical β-SiC.TEM images show that the nanowires have a wide diameter range from 10 to 100 nm,and some thin nanowires are bonded to the thick one by amorphous CVD-SiC.A SiC branch generates from an amorphous section of a thick one with an angle of 70° between them,which is consistent with the [111] axis stacking angle of the crystal.SAED and fast Fourier transform（FFT） patterns reveal that the nanowires can grow along with different axes,and the bamboo-nodes section is full of stacking faults and twin crystal.The twisted SiC lattice planes reveal that the screw dislocation growth is the main mechanism for the CVD-SiC nanowires.
基金Project(51205302)supported by the National Natural Science Foundation of ChinaProject(2013JM7017)supported by the Natural Science Basic Research Plan in Shanxi Province of ChinaProject(K5051304006)supported by the Fundamental Research Funds for the Central Universities,China
文摘Based on the EAM potential, a molecular dynamics study on the tensile properties of ultrathin nickel nanowires in the （100〉 orientation with diameters of 3.94, 4.95 and 5.99 nm was presented at different temperatures and strain rates. The temperature and strain rate dependences of tensile properties were investigated. The simulation results show that the elastic modulus and the yield strength are gradually decreasing with the increase of temperature, while with the increase of the strain rate, the stress--strain curves fluctuate more intensely and the ultrathin nickel nanowires rupture at one smaller and smaller strain. At an ideal temperature of 0.01 K, the yield strength of the nanowires drops rapidly with the increase of strain rate, and at other temperatures the strain rate has a little influence on the elastic modulus and the yield strength. Finally, the effects of size on the tensile properties of ultrathin nickel nanowires were briefly discussed.
文摘ZnO nanowire arrays are fabricated on anodized aluminum oxide templates with electric field-assisted electrochemical technology. Transmission electron microscopy results indicate that the nanowires are straight and uniform. X-ray diffraction patterns indicate that the nanowires are highly oriented. The result of selected area electron diffraction suggests that the nanowires are single crystals. The photoluminescence spectrum presents a broad-band luminescence in the region of 350-650nm. The effect of the assisted transverse electric field on the growth process of ZnO nanowires is also discussed.
基金supported by the National Natural Science Foundation of China(No.52172056,62125406,62304226,52188101,62450124,and 62074150)the National Key Research and Development Program of China(2021YFA1200801)the Special Projects of the Central Government in Guidance of Local Science and Technology Development(2024010859-JH6/1006).
文摘Diamond,an ultrawide-bandgap semiconductor material,is promising for solar-blind ultraviolet photodetectors in extreme environments.However,when exposed to high-temperature conditions,diamond photodetector surfaces are unavoidably terminated with oxygen,leading to low photoresponsivity.To address this limitation,single-crystalline diamond nanowires(DNWs)embedded with platinum(Pt)nanoparticles were developed using Pt film deposition followed by chemical vapor deposition(CVD)homoepitaxial growth.During the CVD,Pt nanoparticles(approximately 20 nm in diameter)undergo dewetting and become uniformly embedded within the single-crystalline DNWs.Photodetectors fabricated with these Pt nanoparticles-embedded DNWs achieve a responsivity of 68.5 A W^(−1) under 220 nm illumination at room temperature,representing an improvement of approximately 2000 times compared to oxygen-terminated bulk diamond devices.Notably,the responsivity further increases with temperature,reaching an exceptional value of 3098.7 A W^(−1) at 275℃.This outstanding performance is attributed to the synergistic effects of the one-dimensional nanowire structure,deep-level defects,the localized surface plasmon resonance effects induced by embedded Pt nanoparticles,and localized Schottky junctions at the Pt/diamond interface,which enhance optical absorption,carrier generation,and separation efficiency.These results highlight the significant potential of Pt nanoparticles-embedded DNWs for advanced deep ultraviolet detection in harsh environments,including aerospace,industrial monitoring,and other applications.
基金supported by the National Natural Science Foundation of China(Grant Nos.12374196,92165201,and 11634011)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302800)+2 种基金the CAS Project for Young Scientists in Basic Research(Grant No.YSBR-046)the Fundamental Research Funds for the Central Universities(Grant Nos.WK3510000006 and WK3430000003)the Initiative Project in Quantum Information Technologies of Anhui Province,China(Grant No.AHY170000)。
文摘Confining particles in one-dimensional(1D)systems profoundly modifies their electronic behaviors,which have been extensively demonstrated in carbon nanotubes and atomic chains.Structural instabilities and electron localizations often dominate the conductivity of 1D nanowires.Here,we successfully grew Bi single nanowires and nanowire arrays on Pb-√7×√3substrates via molecular beam epitaxy,both of which exhibit metallic behavior.Using scanning tunneling microscopy and first-principles density functional theory calculations,the interwire coupling and the correlation between nanowire bundles and electronic properties are investigated.A characteristic peak at 0.75 e V is observed on single wires and wire bundles of up to four nanowires,whereas interwire coupling weakens it and makes it disappear for wire bundles of five and above.These findings illustrate that the interwire coupling plays a critical role in the electronic structure of the1D system,which provides insights for the design of nano-electronics materials.
基金financially supported by the National Natural Science Foundation of China(21905137)the Research Grants Council of Hong Kong(15307922,C5037-18G,C4005-22Y)+1 种基金RGC Senior Research Fellowship Scheme(SRFS2223-5S01)the Hong Kong Polytechnic University:Sir Sze-yuen Chung Endowed Professorship Fund(8-8480)。
文摘Semitransparent organic photovoltaics(ST-OPVs)for building integration represent a pivotal direction in the development of photovoltaic industry.Solution-processed silver nanowires(AgNWs)are considered promising candidates for transparent electrodes in semitransparent devices due to their high transparency-conductivity-efficiency merit,large-scale processability,and low cost.In this work,we develop two solution-processed organic–inorganic hybrid electrodes,named AgNWs-PD and AgNWsPC,utilizing AgNWs as the conductive framework and aliphatic amine-functionalized perylene-diimide(PDINN)as the sandwiched material,while AgNWs-PC exhibits significantly improved electrical conductivity and enhanced contact area with the underlying electron transport layer.The optimized device achieves a power conversion efficiency of 9.45%with an open circuit voltage of 0.846 V,a high filling factor of 75.4%,and an average visible transmittance(AVT)of 44.0%,delivering an outstanding light utilization efficiency(LUE)of 4.16%,which is the highest reported value for all solution-processed ST-OPVs.In addition,by coupling a 30-nm tellurium dioxide atop AgNWs-PC,the bifaciality factor of derivative devices improves from 73.7%to 99.4%,while maintaining a high bifacial LUE over 3.7%.Our results emphasize the superiority and effectiveness of PDINN-sandwiched AgNWs electrodes for highperformance and all solution-processed ST-OPVs.
