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An interconnecting bus power optimization method combining interconnect wire spacing with wire ordering
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作者 朱樟明 郝报田 +2 位作者 恩云飞 杨银堂 李跃进 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第6期509-516,共8页
On-chip interconnect buses consume tens of percents of dynamic power in a nanometer scale integrated circuit and they will consume more power with the rapid scaling down of technology size and continuously rising cloc... On-chip interconnect buses consume tens of percents of dynamic power in a nanometer scale integrated circuit and they will consume more power with the rapid scaling down of technology size and continuously rising clock frequency, therefore it is meaningful to lower the interconnecting bus power in design. In this paper, a simple yet accurate interconnect parasitic capacitance model is presented first and then, based on this model, a novel interconnecting bus optimization method is proposed. Wire spacing is a process for spacing wires for minimum dynamic power, while wire ordering is a process that searches for wire orders that maximally enhance it. The method, i.e., combining wire spacing with wire ordering, focuses on bus dynamic power optimization with a consideration of bus performance requirements. The optimization method is verified based on various nanometer technology parameters, showing that with 50% slack of routing space, 25.71% and 32.65% of power can be saved on average by the proposed optimization method for a global bus and an intermediate bus, respectively, under a 65-nm technology node, compared with 21.78% and 27.68% of power saved on average by uniform spacing technology. The proposed method is especially suitable for computer-aided design of nanometer scale on-chip buses. 展开更多
关键词 interconnect bus dynamic power wire ordering wire spacing nanometer scale process
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70-nanometer DRAM Process Technology Employing the CVD Method
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作者 赵建才 《当代外语研究》 2005年第2期19-20,共2页
随着物质生活水平的提高,人们对手机、个人电脑和家用电器的使用功能要求越来越高。为了满足人们的需求,采用高性能的动态随机存取存储器是提高电子产品性能的关键,因此韩国三星公司利用化学汽相沉淀法开发出70纳米级的动态随机存取存... 随着物质生活水平的提高,人们对手机、个人电脑和家用电器的使用功能要求越来越高。为了满足人们的需求,采用高性能的动态随机存取存储器是提高电子产品性能的关键,因此韩国三星公司利用化学汽相沉淀法开发出70纳米级的动态随机存取存储器加工技术。该技术克服了目前采用物理汽相沉淀法加工存储器所存在的缺陷,如晶片表面沉积物分布不均,同时该技术可节约20%的制造成本。 展开更多
关键词 沉淀法 nanometer DRAM process Technology Employing the CVD Method 动态随机存取存储器 CVD
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Physical Design Methodology for Godson-2G Microprocessor
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作者 赵继业 刘动 +6 位作者 郇丹丹 苏孟豪 肖斌 徐英 史峰 陈晨 王松 《Journal of Computer Science & Technology》 SCIE EI CSCD 2010年第2期225-231,共7页
The Godson-2G microprocessor is a high performance SOC which integrates a four-issue 64-bit high performance CPU core (called GS464), a DDR2/3 controller, a HyperTransport controller, a PCI/PCI-X controller, etc. It... The Godson-2G microprocessor is a high performance SOC which integrates a four-issue 64-bit high performance CPU core (called GS464), a DDR2/3 controller, a HyperTransport controller, a PCI/PCI-X controller, etc. It is physically implemented in 65 nm CMOS process and reaches the frequency of 1GHz with power consumption less than 4 W. The main challenges of Godson-2G physical implementation include nanometer process technology effects, high performance design targets, and tight schedule. This paper describes the key innovative features of physical design methodology which had been used in Godson-2G physical implementation, with particular emphasis on interconnect driven floorplan generation (ICD-FP), adapted boundary constraints design optimization (ABC-OPT), automatic register group clock tree generation methodology (ARG-CTS). 展开更多
关键词 computer architecture Godson-2G physical design methodology nanometer process
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