Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis ...Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In_(2)O_(3)) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In_(2)O_(3) on the structural and electrical transport properties of In_(2)O_(3), revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(V_(th)).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm^(2)/(V·s), an impressive ON/OFF current ratio of ~10^(7), a V_(th) of 6.26 V, reduced interfacial trap states(D_(it)) of 8.23 ×10^(12) cm^(-2) and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics.展开更多
Nanometer Al_2O_3 is one of new types of functional materials with broad application and development prospects in the future. The basic principle and ways of nanometer Al_2O_3 fabricated using sol-gel technique were i...Nanometer Al_2O_3 is one of new types of functional materials with broad application and development prospects in the future. The basic principle and ways of nanometer Al_2O_3 fabricated using sol-gel technique were introduced, and the factors affecting nanometer Al_2O_3 fabricated using sol-gel method were analyzed. The progress in research on nanometer Al_2O_3 and the application fields of nanometer Al_2O_3 were reviewed. The existing problems and the problems prospect for nanometer Al_2O_3 were pointed out.展开更多
ZnO varistors are prepared using the 0.1-0.3mm ZnO powders. The effects of the sintering temperature, contents of In2O3 doping on the non-linear properties of ZnO varistors have been investigated. Theresults show that...ZnO varistors are prepared using the 0.1-0.3mm ZnO powders. The effects of the sintering temperature, contents of In2O3 doping on the non-linear properties of ZnO varistors have been investigated. Theresults show that this kind of ZnO powder has a high sintering activity. It is suitable for making the low voltage varistors. The Vc decreases with the increase of sintered temperature, when the In2O3 content is fixed(0. 98 %, mass fraction), and increases with the increase of In2O3 contents when the temperature is steady.展开更多
采用简单的一步溶剂热法合成了In_(2)O_(3)立方体,并利用X-射线衍射(X-ray diffraction,XRD)、扫描电子显微镜(Scanning electron microscopy,SEM)、透射电子显微镜(Transmission electron microscopy,TEM)、X射线光电子能谱(X-ray phot...采用简单的一步溶剂热法合成了In_(2)O_(3)立方体,并利用X-射线衍射(X-ray diffraction,XRD)、扫描电子显微镜(Scanning electron microscopy,SEM)、透射电子显微镜(Transmission electron microscopy,TEM)、X射线光电子能谱(X-ray photoelectron spectra,XPS)和N2吸附-脱附技术对该In_(2)O_(3)立方体的结构及形貌进行了表征。制备的In_(2)O_(3)立方体尺寸范围在1~5μm。将In_(2)O_(3)立方体制成传感器,测试其对甲苯、丙酮、氯苯、苯、乙醇、二甲苯、甲醇、异丙醇和二氧化氮(NO_(2))气体的气敏性能。结果表明,在最佳工作温度92℃时,In_(2)O_(3)传感器对NO_(2)有良好的气体选择性及灵敏度,对10×10^(-6) NO_(2)气体的响应值为187.7,最低检出限为0.6×10^(-6)。基于In_(2)O_(3)立方体的传感器具有良好的稳定性、重现性和抗湿性,有望实现在实际的复杂环境中对痕量NO_(2)气体的低温检测。展开更多
As one of the most important industrially viable methods for carbon dioxide(CO_(2))utilization,methanol synthesis serves as a platform for production of green fuels and commodity chemicals.For sustainable methanol syn...As one of the most important industrially viable methods for carbon dioxide(CO_(2))utilization,methanol synthesis serves as a platform for production of green fuels and commodity chemicals.For sustainable methanol synthesis,In_(2)O_(3)is an ideal catalyst and has garnered significant attention.Herein,cubic In_(2)O_(3)nanoparticles were prepared via the precipitation method and evaluated for CO_(2)hydrogenation to produce methanol.During the initial 10 h of reaction,CO_(2)conversion gradually increased,accompanied by a slow decrease of methanol selectivity,and the reaction reached equilibrium after 10-20 h on stream.This activation and induction stage may be attributed to the sintering of In_(2)O_(3)nanoparticles and the creation of more oxygen vacancies on In_(2)O_(3)surfaces.Further experimental studies demonstrate that hydrogen induction created additional oxygen vacancies during the catalyst activation stage,enhancing the performance of In_(2)O_(3)catalyst for CO_(2)hydrogenation.Density functional theory calculations and microkinetic simulations further demonstrated that surfaces with higher oxygen vacancy coverages or hydroxylated surfaces formed during this induction period can enhance the reaction rate and increase the CO_(2)conversion.However,they predominantly promote the formation of CO instead of methanol,leading to reduced methanol selectivity.These predictions align well with the above-mentioned experimental observations.Our work thus provides an in-depth analysis of the induction stage of the CO_(2)hydrogenation process on In_(2)O_(3)nano-catalyst,and offers valuable insights for significantly improving the CO_(2)reactivity of In_(2)O_(3)-based catalysts while maintaining long-term stability.展开更多
The rapid recombination of photogenerated carriers poses a significant limitation on the use of CdS quantum dots(QDs)in photocatalysis.Herein,the construction of a novel S-scheme heterojunction between cubic-phase CdS...The rapid recombination of photogenerated carriers poses a significant limitation on the use of CdS quantum dots(QDs)in photocatalysis.Herein,the construction of a novel S-scheme heterojunction between cubic-phase CdS QDs and hollow nanotube In_(2)O_(3)is successfully achieved using an electrostatic self-assembly method.Under visible light irradiation,all CdS-In_(2)O_(3)composites exhibit higher hydrogen evolution efficiency compared to pure CdS QDs.Notably,the photocatalytic H_(2)evolution rate of the optimal CdS-7%In_(2)O_(3)composite is determined to be 2258.59μmol g^(−1)h^(−1),approximately 12.3 times higher than that of pure CdS.The cyclic test indicates that the CdS-In_(2)O_(3)composite maintains considerable activity even after 5 cycles,indicating its excellent stability.In situ X-ray photoelectron spectroscopy and density functional theory calculations confirm that carrier migration in CdS-In_(2)O_(3)composites adheres to a typical S-scheme heterojunction mechanism.Additionally,a series of characterizations demonstrate that the formation of S-scheme heterojunctions between In_(2)O_(3)and CdS inhibits charge recombination and accelerates the separation and migration of photogenerated carriers in the CdS QDs,thus achieving enhanced photocatalytic performance.This work elucidates the pivotal role of S-scheme heterojunctions in photocatalytic H_(2)production and offers novel insights into the construction of effective composite photocatalysts.展开更多
基金funded by the research startup funding of National Research Foundation (NRF) of Korea through the Ministry of Science and ICT 2022R1G1A1009887Part of this study was supported by research start-up funding of Anhui University (S202418001/078)。
文摘Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In_(2)O_(3)) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In_(2)O_(3) on the structural and electrical transport properties of In_(2)O_(3), revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(V_(th)).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm^(2)/(V·s), an impressive ON/OFF current ratio of ~10^(7), a V_(th) of 6.26 V, reduced interfacial trap states(D_(it)) of 8.23 ×10^(12) cm^(-2) and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics.
文摘Nanometer Al_2O_3 is one of new types of functional materials with broad application and development prospects in the future. The basic principle and ways of nanometer Al_2O_3 fabricated using sol-gel technique were introduced, and the factors affecting nanometer Al_2O_3 fabricated using sol-gel method were analyzed. The progress in research on nanometer Al_2O_3 and the application fields of nanometer Al_2O_3 were reviewed. The existing problems and the problems prospect for nanometer Al_2O_3 were pointed out.
文摘ZnO varistors are prepared using the 0.1-0.3mm ZnO powders. The effects of the sintering temperature, contents of In2O3 doping on the non-linear properties of ZnO varistors have been investigated. Theresults show that this kind of ZnO powder has a high sintering activity. It is suitable for making the low voltage varistors. The Vc decreases with the increase of sintered temperature, when the In2O3 content is fixed(0. 98 %, mass fraction), and increases with the increase of In2O3 contents when the temperature is steady.
文摘采用简单的一步溶剂热法合成了In_(2)O_(3)立方体,并利用X-射线衍射(X-ray diffraction,XRD)、扫描电子显微镜(Scanning electron microscopy,SEM)、透射电子显微镜(Transmission electron microscopy,TEM)、X射线光电子能谱(X-ray photoelectron spectra,XPS)和N2吸附-脱附技术对该In_(2)O_(3)立方体的结构及形貌进行了表征。制备的In_(2)O_(3)立方体尺寸范围在1~5μm。将In_(2)O_(3)立方体制成传感器,测试其对甲苯、丙酮、氯苯、苯、乙醇、二甲苯、甲醇、异丙醇和二氧化氮(NO_(2))气体的气敏性能。结果表明,在最佳工作温度92℃时,In_(2)O_(3)传感器对NO_(2)有良好的气体选择性及灵敏度,对10×10^(-6) NO_(2)气体的响应值为187.7,最低检出限为0.6×10^(-6)。基于In_(2)O_(3)立方体的传感器具有良好的稳定性、重现性和抗湿性,有望实现在实际的复杂环境中对痕量NO_(2)气体的低温检测。
文摘As one of the most important industrially viable methods for carbon dioxide(CO_(2))utilization,methanol synthesis serves as a platform for production of green fuels and commodity chemicals.For sustainable methanol synthesis,In_(2)O_(3)is an ideal catalyst and has garnered significant attention.Herein,cubic In_(2)O_(3)nanoparticles were prepared via the precipitation method and evaluated for CO_(2)hydrogenation to produce methanol.During the initial 10 h of reaction,CO_(2)conversion gradually increased,accompanied by a slow decrease of methanol selectivity,and the reaction reached equilibrium after 10-20 h on stream.This activation and induction stage may be attributed to the sintering of In_(2)O_(3)nanoparticles and the creation of more oxygen vacancies on In_(2)O_(3)surfaces.Further experimental studies demonstrate that hydrogen induction created additional oxygen vacancies during the catalyst activation stage,enhancing the performance of In_(2)O_(3)catalyst for CO_(2)hydrogenation.Density functional theory calculations and microkinetic simulations further demonstrated that surfaces with higher oxygen vacancy coverages or hydroxylated surfaces formed during this induction period can enhance the reaction rate and increase the CO_(2)conversion.However,they predominantly promote the formation of CO instead of methanol,leading to reduced methanol selectivity.These predictions align well with the above-mentioned experimental observations.Our work thus provides an in-depth analysis of the induction stage of the CO_(2)hydrogenation process on In_(2)O_(3)nano-catalyst,and offers valuable insights for significantly improving the CO_(2)reactivity of In_(2)O_(3)-based catalysts while maintaining long-term stability.
文摘The rapid recombination of photogenerated carriers poses a significant limitation on the use of CdS quantum dots(QDs)in photocatalysis.Herein,the construction of a novel S-scheme heterojunction between cubic-phase CdS QDs and hollow nanotube In_(2)O_(3)is successfully achieved using an electrostatic self-assembly method.Under visible light irradiation,all CdS-In_(2)O_(3)composites exhibit higher hydrogen evolution efficiency compared to pure CdS QDs.Notably,the photocatalytic H_(2)evolution rate of the optimal CdS-7%In_(2)O_(3)composite is determined to be 2258.59μmol g^(−1)h^(−1),approximately 12.3 times higher than that of pure CdS.The cyclic test indicates that the CdS-In_(2)O_(3)composite maintains considerable activity even after 5 cycles,indicating its excellent stability.In situ X-ray photoelectron spectroscopy and density functional theory calculations confirm that carrier migration in CdS-In_(2)O_(3)composites adheres to a typical S-scheme heterojunction mechanism.Additionally,a series of characterizations demonstrate that the formation of S-scheme heterojunctions between In_(2)O_(3)and CdS inhibits charge recombination and accelerates the separation and migration of photogenerated carriers in the CdS QDs,thus achieving enhanced photocatalytic performance.This work elucidates the pivotal role of S-scheme heterojunctions in photocatalytic H_(2)production and offers novel insights into the construction of effective composite photocatalysts.
