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Solids in nano-scales:extreme strength and elasticity
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作者 Wei Yang Hong-Tao Wang +2 位作者 Hao-Fei Zhou Ye-Qiang Bu Zheng-Ping Su 《Acta Mechanica Sinica》 2025年第7期3-20,共18页
Solids in nano-scales hold the promise to exhibit extreme strength and elasticity due to the absence of interior defects and the designability of micro-arrangements.A nano-scaled bulk sample can be produced by diamond... Solids in nano-scales hold the promise to exhibit extreme strength and elasticity due to the absence of interior defects and the designability of micro-arrangements.A nano-scaled bulk sample can be produced by diamond,ice,metallic twins,high entropy alloy(HEA),or cubic boron nitride(cBN).A loading stage capable of 4-DoF movements was designed and built to achieve multi-axial mechanical loading inside a transmission electronic microscope chamber with sub-nanometer loading precision.For single crystal diamond in the shape of nano-needles,we were able to achieve an extreme bending strength of 125 GPa at the tensile side,approaching the theoretical strength of diamond.For ice fibers of sub-micron radius,an extreme elastic strain of 10.9%was acquired,far exceeding the previous record of 0.3%for the elastic strain achievable by ice.For metallic twin specimens made by nano-welding,a shear strain as large as 364%was recorded parallel to the twin boundary.Cyclic shear loading aligned with the twin boundary would drive an up-and-down sweeping movement of the low-angle grain boundary,as composed by an array of dislocations.The sweep of the grain boundary effectively cleanses the lattice defects and creates a feasible scenario of unlimited cyclic endurance.For a HEA dog-bone specimen in nano-scale,an extreme elastic strain of about 10%was achieved.At this level of mechanical straining,stretch-induced melting for crystalline metals,as envisaged by Lindemann a century ago,was realized.For cBN crystals,a fracture path inclined to the stacking hexagon planes would result in a new failure mechanism of layered decohesion,triggered by the extremely large elastic strain(>7%)along the edge of the submicron-scaled specimen.These results indicate ample room for upgrading the mechanical behaviour of solids in nano-scales. 展开更多
关键词 nano-scale STRENGTH ELASTICITY Cyclic loading Strain melting Layered decohesion Diamond Ice Twinned metal High entropy alloy Cubic boron nitride
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新型低电压SRAM读写辅助电路设计
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作者 刘勇 彭春雨 《中国集成电路》 2025年第1期54-58,64,共6页
随着微处理器对低功耗与高能效需求的增长,SRAM作为其主要功耗与面积来源,优化SRAM功耗至关重要。降低电源电压是降低功耗的重要方法,但也会严重影响SRAM的读写性能。针对此问题,本文提出了一种新型读写辅助电路结构,该结构可以增强写... 随着微处理器对低功耗与高能效需求的增长,SRAM作为其主要功耗与面积来源,优化SRAM功耗至关重要。降低电源电压是降低功耗的重要方法,但也会严重影响SRAM的读写性能。针对此问题,本文提出了一种新型读写辅助电路结构,该结构可以增强写入能力和加快位线放电速度。此电路通过在写入期间将字线电压先升至欠驱电压后升至过驱电压,以在确保稳定性的同时加强写能力;在读取时,轻微提高字线电压至高于VDD电压,从而加快位线放电速度,增大两条位线电压差值,从而提高SRAM的可靠性。仿真结果表明,提出的结构可以将最小工作电压降低至0.4V,相比未使用辅助电路的结构写能力提升一倍以上,字线打开相同的一段时间,两条位线电压差值可以增加40%以上。相比于传统结构在各自最小电压下功耗可降低20%以上,而相比于在标准电压下的传统结构,功耗可降低70%以上,且只增大3%的面积。 展开更多
关键词 低电压 低功耗 静态随机存取存储器(sram) 读写辅助电路
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SRAM型FPGA微系统故障分析及测试覆盖性研究
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作者 张宇飞 华更新 +3 位作者 赵亚飞 刘群 张帆 李勇 《微电子学与计算机》 2025年第10期158-167,共10页
基于系统级封装(System in a Package, SiP)技术的SRAM型FPGA微系统广泛应用于航天领域。由于微系统复杂的封装结构,限制了大多数传统失效分析设备与分析方式的应用。针对微系统器件的故障诊断困难、测试流程复杂等可靠性问题,开展了常... 基于系统级封装(System in a Package, SiP)技术的SRAM型FPGA微系统广泛应用于航天领域。由于微系统复杂的封装结构,限制了大多数传统失效分析设备与分析方式的应用。针对微系统器件的故障诊断困难、测试流程复杂等可靠性问题,开展了常见故障分析研究。对SRAM配置固有缺陷和FPGA内部配置刷新电路异常等典型故障的产生机理进行了深入分析和总结。结合理论分析和问题现象,提出了配置位回读校验测试及比对、辅助电源VCC, AUX电流参数一致性控制等测试筛选方法,有效提升了测试覆盖性。利用相应测试手段和数据分析方法,可精准定位失效机理与失效部位,对后续宇航用SRAM型FPGA微系统应用及筛选有重要意义。 展开更多
关键词 sram型FPGA 微系统 故障分析 测试覆盖性
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Nano-scale Reinforcements and Properties of Al-Si-Cu Alloy Processed by High-Pressure Torsion
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作者 DONG Ying WU Siyuan +4 位作者 HE Ziyang LIANG Chen CHENG Feng HE Zuwei QIAN Chenhao 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS CSCD 2024年第5期1253-1259,共7页
To improve the comprehensive mechanical properties of Al-Si-Cu alloy,it was treated by a high-pressure torsion process,and the effect of the deformation degree on the microstructure and properties of the Al-Si-Cu allo... To improve the comprehensive mechanical properties of Al-Si-Cu alloy,it was treated by a high-pressure torsion process,and the effect of the deformation degree on the microstructure and properties of the Al-Si-Cu alloy was studied.The results show that the reinforcements(β-Si andθ-CuAl_(2)phases)of the Al-Si-Cu alloy are dispersed in theα-Al matrix phase with finer phase size after the treatment.The processed samples exhibit grain sizes in the submicron or even nanometer range,which effectively improves the mechanical properties of the material.The hardness and strength of the deformed alloy are both significantly raised to 268 HV and 390.04 MPa by 10 turns HPT process,and the fracture morphology shows that the material gradually transits from brittle to plastic before and after deformation.The elements interdiffusion at the interface between the phases has also been effectively enhanced.In addition,it is found that the severe plastic deformation at room temperature induces a ternary eutectic reaction,resulting in the formation of ternary Al+Si+CuAl_(2)eutectic. 展开更多
关键词 Al-Si-Cu alloy high-pressure torsion nano-scale reinforcements ternary eutectic
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混洗SRAM:SRAM中的并行按位数据混洗
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作者 张敦博 曾灵灵 +2 位作者 王若曦 王耀华 沈立 《计算机研究与发展》 北大核心 2025年第1期75-89,共15页
向量处理单元(vector processing unit,VPU)已被广泛应用于神经网络、信号处理和高性能计算等处理器设计中,但其总体性能仍受限于专门用于对齐数据的混洗操作.传统上,处理器使用其数据混洗单元来处理混洗操作.然而,使用数据混洗单元来... 向量处理单元(vector processing unit,VPU)已被广泛应用于神经网络、信号处理和高性能计算等处理器设计中,但其总体性能仍受限于专门用于对齐数据的混洗操作.传统上,处理器使用其数据混洗单元来处理混洗操作.然而,使用数据混洗单元来处理混洗指令将带来昂贵的数据移动开销,并且数据混洗单元只能串行混洗数据.事实上,混洗操作只会改变数据的布局,理想情况下混洗操作应在内存中完成.随着存内计算技术的发展,SRAM不仅可以作为存储部件,同时还能作为计算单元.为了实现存内混洗,提出了混洗SRAM,它可以在SRAM体中逐位地并行混洗多个向量.混洗SRAM的关键思想是利用SRAM体中位线的数据移动能力来改变数据的布局.这样SRAM体中位于同一位线上不同数据的相同位可以同时被移动,从而使混洗操作拥有高度的并行性.通过适当的数据布局和向量混洗扩展指令的支持,混洗SRAM可以高效地处理常用的混洗操作.评测结果表明,对于常用的混洗操作,混洗SRAM可以实现平均28倍的性能增益,对于FFT,AlexNet,VggNet等实际的应用,可以实现平均3.18倍的性能增益.混洗SRAM相较于传统SRAM的面积开销仅增加了4.4%. 展开更多
关键词 向量单指令多数据体系结构 静态随机访问存储器 混洗操作 向量内存 存内计算
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多重散射对40nm SRAM和3D-SRAM单粒子翻转的影响
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作者 罗云龙 李刚 张宇 《安徽大学学报(自然科学版)》 北大核心 2025年第1期53-60,共8页
基于RPP(rectangular parallelepiped)模型,利用Geant4软件包,构建了一个40 nm SRAM器件模型用于单粒子翻转效应模拟,通过Weibull函数拟合得到σ_(sat)和LET_(th)分别为8.98×10^(-9)cm^(2)·bit^(-1)和0.084 MeV/(mg·cm^(... 基于RPP(rectangular parallelepiped)模型,利用Geant4软件包,构建了一个40 nm SRAM器件模型用于单粒子翻转效应模拟,通过Weibull函数拟合得到σ_(sat)和LET_(th)分别为8.98×10^(-9)cm^(2)·bit^(-1)和0.084 MeV/(mg·cm^(-2)).基于3D-IC技术设计了一种新的3D-SRAM器件,通过Geant4进行了建模和单粒子翻转模拟,结果表明,在同一3D-SRAM器件中上层单元对下层单元有防护作用.通过改变覆盖层中的高Z材料,发现高Z材料可以有效地减少Fe离子在射程末端的多重散射,且Ta的效果优于W.在同一3D-SRAM器件中,下层单元(die3)的多重散射截面峰值更低. 展开更多
关键词 GEANT4 单粒子翻转 多重散射 3D-sram
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纳米级SRAM多位翻转检纠错方法实现
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作者 薛国凤 安军社 周昌义 《哈尔滨工业大学学报》 北大核心 2025年第9期39-45,共7页
为解决纳米级SRAM(100 nm以内工艺)在航天工程应用中出现的多位翻转问题,依据纳米级SRAM的翻转特性,在传统串行编译码的基础上优化改进,采用并行编译码的方式,实现了基于RS(12,8,4)码的纳米级SRAM的加固方法,在单时钟节拍内实现编译码... 为解决纳米级SRAM(100 nm以内工艺)在航天工程应用中出现的多位翻转问题,依据纳米级SRAM的翻转特性,在传统串行编译码的基础上优化改进,采用并行编译码的方式,实现了基于RS(12,8,4)码的纳米级SRAM的加固方法,在单时钟节拍内实现编译码输出。以FPGA为平台,验证该加固方法的延时和纠错能力。测试结果表明:与Xilinx自带的可检二纠一汉明码的块RAM相比,本文提出的方法访问延时相近,但纠错能力是汉明码的5~8倍;与FUEC-QUAEC、CLC等编译码方法相比,将连续5 bit翻转错误的纠正率提高到100%。采用并行编译码实现的基于RS(12,8,4)码加固方法可用于纳米级SRAM抗多位翻转加固,以较小的延时代价实现纠正一个码字(48 bit)内任意两个符号(最多8 bit)内的错误,可完全纠正空间单粒子环境中出现的单个字内连续5 bit翻转的错误。该加固方法可扩展应用到CPU外部存储器的访问控制以及CPU内部cache的加固,以解决现有航天处理器采用检二纠一码无法纠正其cache多位翻转错误的问题。 展开更多
关键词 单粒子效应 多位翻转 RS编码 纳米级sram
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重离子入射角度和LET对FinFET SRAM的单粒子效应仿真研究
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作者 张琦 岳素格 +4 位作者 张彦龙 苑靖爽 朱永钦 李同德 王亮 《微电子学》 北大核心 2025年第1期16-20,共5页
仿真研究了不同LET值的重离子沿不同方位、不同入射角度入射对FinFET SRAM的影响,研究发现对于FinFET SRAM其翻转状态受到离子入射方向的影响较为显著,沿着鳍方向入射更容易使SRAM单元发生翻转,垂直于鳍方向则不太容易使SRAM单元发生翻... 仿真研究了不同LET值的重离子沿不同方位、不同入射角度入射对FinFET SRAM的影响,研究发现对于FinFET SRAM其翻转状态受到离子入射方向的影响较为显著,沿着鳍方向入射更容易使SRAM单元发生翻转,垂直于鳍方向则不太容易使SRAM单元发生翻转。当离子LET值较低或者角度较大时,离子入射在敏感漏极中电离产生的电荷不足以使SRAM单元发生翻转。当离子LET值较高且有一定角度入射时,离子穿出N-FinFET的鳍影响N阱,触发寄生双极效应,当LET值足够高时,寄生双极电流超过漏极漂移收集机制导致的电流,就会发生单粒子翻转恢复。对于FinFET集成电路的抗辐射加固具有指导意义。 展开更多
关键词 鳍式场效应晶体管 静态随机存取存储器 单粒子翻转 寄生双极放大效应
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基于单粒子效应的SRAM在线检错电路设计与实现
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作者 白创 周伟 《电子设计工程》 2025年第4期25-29,35,共6页
针对单粒子效应引起的航天器SRAM数据错误问题,提出一种基于错误检查纠正(ECC)与完整性检测器相结合的系统级SRAM在线检测错误电路。ECC采用(39,32)汉明码设计,实现数据被访问时自动纠正易发性的单比特错误。完整性检测器基于哈希算法... 针对单粒子效应引起的航天器SRAM数据错误问题,提出一种基于错误检查纠正(ECC)与完整性检测器相结合的系统级SRAM在线检测错误电路。ECC采用(39,32)汉明码设计,实现数据被访问时自动纠正易发性的单比特错误。完整性检测器基于哈希算法进行主动循环检测设计,在ECC检查的基础上,实现对数据的周期性检查,有效防止ECC错检错纠。基于CMOS 0.18μm工艺实现在线检错电路。仿真结果表明,该电路在读写内存数据的情况下能够修复1 bit错误,并能检测出多位错误,极大地提高了SRAM的抗SEU性能。 展开更多
关键词 单粒子效应 sram 系统级 在线检测错误
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面向模拟SRAM存算一体芯片的数字接口设计
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作者 孔鹤霖 魏知行 +1 位作者 陈挺然 潘彪 《集成电路与嵌入式系统》 2025年第7期1-8,共8页
针对模拟存算一体芯片设计中仿真验证难题,提出一种创新的数字接口设计方案,旨在提高大规模计算场景下的仿真效率。该方案分析SRAM存算一体原理,将SPICE模型与数字控制电路结合,利用数字方法完成模拟存算一体设计的仿真验证,从而提升开... 针对模拟存算一体芯片设计中仿真验证难题,提出一种创新的数字接口设计方案,旨在提高大规模计算场景下的仿真效率。该方案分析SRAM存算一体原理,将SPICE模型与数字控制电路结合,利用数字方法完成模拟存算一体设计的仿真验证,从而提升开发效率。为验证方案的有效性,构建评估体系,对比数字接口仿真与传统模拟电路仿真。结果显示,新方案仿真速度提升2倍以上,配置效率提升1000倍以上,优势显著。该研究获得科技部重点研发计划(2021YFB3601300)支持,已在180nm工艺节点完成流片验证,证实了数字接口设计方案在大规模计算场景下仿真存算一体设计的效率优势。 展开更多
关键词 神经网络 存算一体 数模混合仿真 模拟sram
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Enhancing neural network robustness: Laser fault injection resistance in 55-nm SRAM for space applications
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作者 Qing Liu Haomiao Cheng +3 位作者 Xiang Yao Zhengxuan Zhang Zhiyuan Hu Dawei Bi 《Chinese Physics B》 2025年第4期478-484,共7页
The integration of artificial intelligence(AI)with satellite technology is ushering in a new era of space exploration,with small satellites playing a pivotal role in advancing this field.However,the deployment of mach... The integration of artificial intelligence(AI)with satellite technology is ushering in a new era of space exploration,with small satellites playing a pivotal role in advancing this field.However,the deployment of machine learning(ML)models in space faces distinct challenges,such as single event upsets(SEUs),which are triggered by space radiation and can corrupt the outputs of neural networks.To defend against this threat,we investigate laser-based fault injection techniques on 55-nm SRAM cells,aiming to explore the impact of SEUs on neural network performance.In this paper,we propose a novel solution in the form of Bin-DNCNN,a binary neural network(BNN)-based model that significantly enhances robustness to radiation-induced faults.We conduct experiments to evaluate the denoising effectiveness of different neural network architectures,comparing their resilience to weight errors before and after fault injections.Our experimental results demonstrate that binary neural networks(BNNs)exhibit superior robustness to weight errors compared to traditional deep neural networks(DNNs),making them a promising candidate for spaceborne AI applications. 展开更多
关键词 single event effects convolutional neural network fault injection sram
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Back-gate bias and supply voltage dependency on the single-event upset susceptibility of 6 T CSOI-SRAM
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作者 Li-Wen Yao Jin-Hu Yang +12 位作者 Yu-Zhu Liu Bo Li Yang Jiao Shi-Wei Zhao Qi-Yu Chen Xin-Yu Li Tian-Qi Wang Fan-Yu Liu Jian-Tou Gao Jian-Li Liu Xing-Ji Li Jie Liu Pei-Xiong Zhao 《Nuclear Science and Techniques》 2025年第9期105-115,共11页
This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) unde... This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) under high linear energy transfer heavyion experimentation.The experimental findings demonstrate that applying a negative back-gate bias to NMOS and a positive back-gate bias to PMOS enhances the SEU resistance of SRAM.Specifically,as the back-gate bias for N-type transistors(V_(nsoi)) decreases from 0 to-10 V,the SEU cross section decreases by 93.23%,whereas an increase in the back-gate bias for P-type transistors (V_(psoi)) from 0 to 10 V correlates with an 83.7%reduction in SEU cross section.Furthermore,a significant increase in the SEU cross section was observed with increase in supply voltage,as evidenced by a 159%surge at V_(DD)=1.98 V compared with the nominal voltage of 1.8 V.To explore the physical mechanisms underlying these experimental data,we analyzed the dependence of the critical charge of the circuit and the collected charge on the bias voltage by simulating SEUs using technology computer-aided design. 展开更多
关键词 Single-event upset(SEU) Static random-access memory(sram) Back-gate voltage Supply voltage
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一种STT-MRAM型NVSRAM单元电路设计
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作者 李晓龙 王克鑫 叶海波 《电子与封装》 2025年第6期65-71,共7页
提出了一种基于自旋转移力矩磁随机存取存储器(STT-MRAM)的非易失性静态随机存取存储器(NVSRAM)单元电路结构。该结构主要由传统6T SRAM单元和非易失性磁性隧道结(MTJ)2部分构成,2者相互独立。在电路正常进行读写操作时MTJ模块不工作,... 提出了一种基于自旋转移力矩磁随机存取存储器(STT-MRAM)的非易失性静态随机存取存储器(NVSRAM)单元电路结构。该结构主要由传统6T SRAM单元和非易失性磁性隧道结(MTJ)2部分构成,2者相互独立。在电路正常进行读写操作时MTJ模块不工作,电路等效为传统6T单元。只有在电路断电前,MTJ才开始存储节点数据,上电后存储节点自动恢复为断电前状态。这种独立模式极大地降低了电路功耗和时序复杂度。该电路读写操作和MTJ数据操作可以同步进行,MTJ存储数据不会影响当前存储节点的数据状态。仿真结果表明,该电路结构具有较低的写功耗,与6T单元相当。电路具有较短的数据恢复时间,仅需194 ps。 展开更多
关键词 自旋转移力矩磁随机存取存储器 静态随机存取存储器 非易失性 低写功耗
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Comprehensive performance analysis of CMOS and CNTFET based 8T SRAM cell
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作者 Mahamudul Hassan Fuad Md Faysal Nayan +2 位作者 Sheikh Shahrier Noor Rahbaar Yeassin Russel Reza Mahmud 《Journal of Electronic Science and Technology》 2025年第2期31-44,共14页
In recent years,carbon nanotube field effect transistor(CNTFET)has become an attractive alternative to silicon for designing high-performance,highly stable,and low-power static random access memory(SRAM).SRAM serves a... In recent years,carbon nanotube field effect transistor(CNTFET)has become an attractive alternative to silicon for designing high-performance,highly stable,and low-power static random access memory(SRAM).SRAM serves as a cache memory in computers and many portable devices.Carbon nanotubes(CNTs),because of their exceptional transport capabilities,outstanding thermal conductivities,and impressive current handling capacities,have demonstrated great potential as an alternative device to the standard complementary metal-oxide-semiconductor(CMOS).The SRAM cell design using CNTFET is being compared to SRAM cell designs built using traditional CMOS technology.This paper presents the comprehensive analysis of CMOS&CNTFET based 8T SRAM cell design.Because of the nanoscale size,ballistic transport,and higher carrier mobility of the semiconducting nanotubes in CNTFET,it is integrated into the 8T SRAM cell.The approach incorporates several nonidealities,including the presence of quantum confinement consequences in the peripheral and transverse prescriptions,acoustic and transparent photon diffraction in the region surrounding the channel,as well as the screening effects by parallel CNTs in CNTFETs with multiple CNTs.By incorporating Stanford University CNTFET model in CADENCE(virtuoso)32 nm simulation,we have found that CNTFET SRAM cell is 4 times faster in terms of write/read delay and the write/read power delay product(PDP)value is almost 5 times lower compared to CMOS based SRAM.We have also analyzed the effect of temperature&different tube positions of CNTs on the performance evaluation of the 8T SRAM cell. 展开更多
关键词 Carbon nanotube field effect transistor(CNTFET) Power delay product(PDP) Static random access memory(sram) Temperature Tube position Write/read delay
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Antibacterial Effect of Nano-scale TiO_2 on Parasitic Bacterium of Nanfeng Citrus in Storage Period 被引量:6
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作者 龙小艺 刘玉英 +4 位作者 余达欢 叶丹 文智总 吕建峰 李良翔 《Agricultural Science & Technology》 CAS 2010年第6期4-6,14,共4页
[Objective] The aim was to observe the antibacterial effect of nano-scale Titanium dioxide on parasitic bacterium of Nanfeng Citrus in storage period.[Method] Nano-scale Titanium dioxide was prepared by dibutyl phthal... [Objective] The aim was to observe the antibacterial effect of nano-scale Titanium dioxide on parasitic bacterium of Nanfeng Citrus in storage period.[Method] Nano-scale Titanium dioxide was prepared by dibutyl phthalate through sol-gel method under anhydrous conditions,and orthogonal experiment was used to determine optimum conditions for nano-scale Titanium dioxide preparation,and structure characterization of nano-scale Titanium dioxide was carried out by X-Ray diffractometer.Oxford cup method was used to explore inhibition effect of nano-scale Titanium dioxide suspension on the activity of normal parasitic bacterium of Nanfeng Citrus.Simultaneously,the empirical preservation test was carried out.[Result] The average diameter of nano-scale Titanium dioxide powder attained to 14.6 nm,actual average yield could reach 90.83% with RSD(Relative Standard Deviation)of 0.86%.[Conclusion] Nano-scale Titanium dioxide had good antibacterial effect on the parasitic bacterium of Nanfeng Citrus in storage period. 展开更多
关键词 nano-scale Titanium dioxide Nanfeng Citrus Antibacterial effect
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NMOS晶体管电荷共享导致的SRAM单元单粒子翻转恢复效应研究
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作者 高珊 李洋 +4 位作者 郝礼才 赵强 彭春雨 蔺智挺 吴秀龙 《中国集成电路》 2024年第6期48-55,共8页
基于Synopsys公司的三维器件模拟软件TCAD,本文研究了NMOS晶体管电荷共享导致SRAM单元的单粒子翻转恢复(SEUR)效应。分析了NMOS晶体管电荷共享导致SEUR效应的物理机制,系统研究了NMOS晶体管偏置(如电源电压、P阱偏置电压)和工艺参数(如P... 基于Synopsys公司的三维器件模拟软件TCAD,本文研究了NMOS晶体管电荷共享导致SRAM单元的单粒子翻转恢复(SEUR)效应。分析了NMOS晶体管电荷共享导致SEUR效应的物理机制,系统研究了NMOS晶体管偏置(如电源电压、P阱偏置电压)和工艺参数(如P+深阱掺杂浓度、P阱接触距离)对线性能量传输翻转恢复阈值(LETrec)以及单粒子翻转脉冲宽度(PWrec)的影响。研究发现:PWrec随着电源电压的增大而增大;PWrec和LETrec随着P阱偏置电压的增大而减小;LETrec随着P+深阱掺杂浓度的增大而增大;PWrec随着P阱接触与NMOS晶体管之间距离的增大而增大,而LETrec随着P阱接触与NMOS晶体管之间距离增大而减小。本文研究结论有助于优化SRAM单元抗单粒子效应设计,尤其是基于SEUR效应的SRAM单元的抗辐照加固设计提供了理论指导。 展开更多
关键词 单粒子翻转恢复效应 sram 电荷共享 工艺参数
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Virtex-5系列SRAM型FPGA单粒子效应重离子辐照试验技术研究 被引量:2
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作者 赖晓玲 郭阳明 +2 位作者 巨艇 朱启 贾亮 《计算机测量与控制》 2024年第1期304-311,共8页
针对SRAM型FPGA在空间辐射环境下易发生单粒子效应,影响星载设备正常工作甚至导致功能中断的问题,开展了SRAM型FPGA单粒子效应地面辐照试验方法研究,提出了配置存储器(CRAM)和块存储器(BRAM)的单粒子翻转效应测试方法,并以Xilinx公司工... 针对SRAM型FPGA在空间辐射环境下易发生单粒子效应,影响星载设备正常工作甚至导致功能中断的问题,开展了SRAM型FPGA单粒子效应地面辐照试验方法研究,提出了配置存储器(CRAM)和块存储器(BRAM)的单粒子翻转效应测试方法,并以Xilinx公司工业级Virtex-5系列SRAM型FPGA为测试对象,设计了单粒子效应测试系统,开展了重离子辐照试验,获取了器件的单粒子闩锁试验数据和CRAM、BRAM以及典型用户电路三模冗余前后的单粒子翻转试验数据;最后利用空间环境模拟软件进行了在轨翻转率分析,基于CREME96模型计算得到XC5VFX130T器件配置存储器GEO轨道的单粒子翻转概率为6.41×10^(-7)次/比特·天。 展开更多
关键词 sram型FPGA 单粒子效应 单粒子翻转 单粒子闩锁 重离子辐照试验
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316L Austenite Stainless Steels Strengthened by Means of Nano-scale Twins 被引量:12
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作者 G.Z. Liu, N.R. Tao and K. Lu Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2010年第4期289-292,共4页
By means of dynamic plastic deformation (DPD) followed by thermal annealing, a mixed structure of micro-sized austenite grains embedded with nano-scale twin bundles (of about 20% in volume) has been synthesized in... By means of dynamic plastic deformation (DPD) followed by thermal annealing, a mixed structure of micro-sized austenite grains embedded with nano-scale twin bundles (of about 20% in volume) has been synthesized in a 316L stainless steel (SS). Such a 316L SS sample exhibits a tensile strength as high as 1001 MPa and an elongation-to-failure of about 23%. The much elevated strength originates from the presence of a considerable number of strengthening nano-twin bundles, while the ductility from the recrystallized grains. The superior strength-ductility combination achieved in the nano-twins-strengthened austenite steel demonstrates a novel approach for optimizing the mechanical properties in engineering materials. 展开更多
关键词 nano-scale twins Strength-ductility combination Dynamic plastic deformation (DPD) Stainless steels
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Visual Object Tracking and Servoing Control of a Nano-Scale Quadrotor:System,Algorithms,and Experiments 被引量:8
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作者 Yuzhen Liu Ziyang Meng +1 位作者 Yao Zou Ming Cao 《IEEE/CAA Journal of Automatica Sinica》 SCIE EI CSCD 2021年第2期344-360,共17页
There are two main trends in the development of unmanned aerial vehicle(UAV)technologies:miniaturization and intellectualization,in which realizing object tracking capabilities for a nano-scale UAV is one of the most ... There are two main trends in the development of unmanned aerial vehicle(UAV)technologies:miniaturization and intellectualization,in which realizing object tracking capabilities for a nano-scale UAV is one of the most challenging problems.In this paper,we present a visual object tracking and servoing control system utilizing a tailor-made 38 g nano-scale quadrotor.A lightweight visual module is integrated to enable object tracking capabilities,and a micro positioning deck is mounted to provide accurate pose estimation.In order to be robust against object appearance variations,a novel object tracking algorithm,denoted by RMCTer,is proposed,which integrates a powerful short-term tracking module and an efficient long-term processing module.In particular,the long-term processing module can provide additional object information and modify the short-term tracking model in a timely manner.Furthermore,a positionbased visual servoing control method is proposed for the quadrotor,where an adaptive tracking controller is designed by leveraging backstepping and adaptive techniques.Stable and accurate object tracking is achieved even under disturbances.Experimental results are presented to demonstrate the high accuracy and stability of the whole tracking system. 展开更多
关键词 nano-scale quadrotor nonlinear control positionbased visual servoing visual object tracking
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Influences of Reaction Parameters and Ce Contents on Structure and Properties of Nano-scale Ce-HA Powders 被引量:3
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作者 L.J.Sun D.G.Guo +2 位作者 W.A.Zhao L.Y.Wang K.W.Xu 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2014年第8期776-781,共6页
Ce-incorporated apatite(Ce-HA) nano-scale particles with different Ce percentage contents(atomic ratio of Ce to Ce + Ca is 5%,10%and 20%,respectively) were synthesized via a simple wet chemical method in this stu... Ce-incorporated apatite(Ce-HA) nano-scale particles with different Ce percentage contents(atomic ratio of Ce to Ce + Ca is 5%,10%and 20%,respectively) were synthesized via a simple wet chemical method in this study.The crystal structure,chemical groups,thermal stability,crystal morphologies and crystal sizes of the Ce-HA nano-particles were characterized by X-ray diffraction(XRD),Fourier transform infrared spectroscopy(FTIR),and transmission electron microscopy(TEM).The influences of reaction temperature,reaction time,pH value,and the atomic ratio of Ce to Ce + Ca on the structure and performance of Ce-HA particles were studied.The results show that the lattice constants,particle sizes,crystallinity and thermal stability of Ce-HA vary with the doped Ce contents.With the increase of Ce content,the lattice constants of the Ce-HA nano-particles remarkably increase but the particle size,crystallinity and thermal stability gradually decrease.The reaction temperature as well as the reaction time has no significant effect on the properties of the final products,while the pH value has a direct relationship with their final chemical composition.The obtained Ce-HA nanosize particles possess potential application in preparing artificial bone implants,bone tissue engineering scaffold and other bioactive coatings. 展开更多
关键词 CERIUM APATITE nano-scale powder Wet chemical approach Biomedical materials
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