Nowadays,a stack of heavily doped polysilicon(poly-Si)and tunnel oxide(SiO_(x))is widely employed to improve the passivation performance in n-type tunnel oxide passivated contact(TOPCon)silicon solar cells.In this cas...Nowadays,a stack of heavily doped polysilicon(poly-Si)and tunnel oxide(SiO_(x))is widely employed to improve the passivation performance in n-type tunnel oxide passivated contact(TOPCon)silicon solar cells.In this case,it is critical to develop an in-line advanced fabrication process capable of producing high-quality tunnel SiO_(x).Herein,an in-line ozone-gas oxidation(OGO)process to prepare the tunnel SiO_(x) is proposed to be applied in n-type TOPCon solar cell fabrication,which has obtained better performance compared with previously reported in-line plasma-assisted N2O oxidation(PANO)process.In order to explore the underlying mechanism,the electrical properties of the OGO and PANO tunnel SiO_(x) are analyzed by deep-level transient spectroscopy technology.Notably,continuous interface states in the band gap are detected for OGO tunnel SiO_(x),with the interface state densities(D_(it))of 1.2×10^(12)–3.6×10^(12) cm^(-2) eV^(-1) distributed in Ev+(0.15–0.40)eV,which is significantly lower than PANO tunnel SiO_(x).Furthermore,X-ray photoelectron spectroscopy analysis indicate that the percentage of SiO_(2)(Si^(4+))in OGO tunnel SiO_(x) is higher than which in PANO tunnel SiO_(x).Therefore,we ascribe the lower D_(it) to the good inhibitory effects on the formation of low-valent silicon oxides during the OGO process.In a nutshell,OGO tunnel SiO_(x) has a great potential to be applied in n-type TOPCon silicon solar cell,which may be available for global photovoltaics industry.展开更多
Thermocells are attracting growing interest as a promising thermoelectric technology for low-grade heat harvesting.However,the scarcity of high-performance redox couples featuring intrinsically high thermopower(Se)and...Thermocells are attracting growing interest as a promising thermoelectric technology for low-grade heat harvesting.However,the scarcity of high-performance redox couples featuring intrinsically high thermopower(Se)and fast redox kinetics hinders the rapid development of thermocells.Identifying potential intrinsically high-performance redox couples remains a significant challenge.This work introduces a novel n-type copper(I/II)chloride(CuCl/CuCl2)redox couple with intrinsically high performance.Through tailored electrolyte design,long-term stability was significantly improved by reducing proton concentration to suppress cuprous ion photo-oxidation,while ammonium chloride solvation enhanced cuprous ion solubility.The resulting system achieves a Se value closely aligned with theoretical predictions and exhibits rapid redox kinetics.Consequently,the optimized CuCl/CuCl_(2) intrinsic system demonstrated a high S_(e) of 1.52 mV K^(−1) and a record-high normalized power density Pmax(ΔT)^(−2) of 0.399 mW m^(−2) K^(−2),surpassing previously reported intrinsic n-type thermocells and rivaling the performance of p-type pristine 0.4 M ferri/ferrocyanide systems.A prototype module comprising 30 p-n units successfully powered a line of light-emitting diodes or a thermohygrometer.This work introduces a valuable redox couple for further advancing high-performance thermocells and demonstrates a viable strategy for developing novel redox systems.展开更多
Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for ...Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.展开更多
基金supported by the National Natural Science Foundation of China(Nos.62025403 and U23A20354)the Natural Science Foundation of Zhejiang Province(LD22E020001)+1 种基金“Pioneer”and“Leading Goose”R&D Program of Zhejiang(2022C01215,2024C01055)the Fundamental Research Funds for the Central Universities(226-2022-00200).
文摘Nowadays,a stack of heavily doped polysilicon(poly-Si)and tunnel oxide(SiO_(x))is widely employed to improve the passivation performance in n-type tunnel oxide passivated contact(TOPCon)silicon solar cells.In this case,it is critical to develop an in-line advanced fabrication process capable of producing high-quality tunnel SiO_(x).Herein,an in-line ozone-gas oxidation(OGO)process to prepare the tunnel SiO_(x) is proposed to be applied in n-type TOPCon solar cell fabrication,which has obtained better performance compared with previously reported in-line plasma-assisted N2O oxidation(PANO)process.In order to explore the underlying mechanism,the electrical properties of the OGO and PANO tunnel SiO_(x) are analyzed by deep-level transient spectroscopy technology.Notably,continuous interface states in the band gap are detected for OGO tunnel SiO_(x),with the interface state densities(D_(it))of 1.2×10^(12)–3.6×10^(12) cm^(-2) eV^(-1) distributed in Ev+(0.15–0.40)eV,which is significantly lower than PANO tunnel SiO_(x).Furthermore,X-ray photoelectron spectroscopy analysis indicate that the percentage of SiO_(2)(Si^(4+))in OGO tunnel SiO_(x) is higher than which in PANO tunnel SiO_(x).Therefore,we ascribe the lower D_(it) to the good inhibitory effects on the formation of low-valent silicon oxides during the OGO process.In a nutshell,OGO tunnel SiO_(x) has a great potential to be applied in n-type TOPCon silicon solar cell,which may be available for global photovoltaics industry.
基金supported by research grants from Innovative Research Group Project of National Natural Science Foundation of China(52021004)the National Key Research and Development Program of China(2022YFB3803300)+1 种基金the National Natural Science Foundation of China(62474026,62205140,and 12204071)the China Postdoctoral Science Foundation(2022M710532).
文摘Thermocells are attracting growing interest as a promising thermoelectric technology for low-grade heat harvesting.However,the scarcity of high-performance redox couples featuring intrinsically high thermopower(Se)and fast redox kinetics hinders the rapid development of thermocells.Identifying potential intrinsically high-performance redox couples remains a significant challenge.This work introduces a novel n-type copper(I/II)chloride(CuCl/CuCl2)redox couple with intrinsically high performance.Through tailored electrolyte design,long-term stability was significantly improved by reducing proton concentration to suppress cuprous ion photo-oxidation,while ammonium chloride solvation enhanced cuprous ion solubility.The resulting system achieves a Se value closely aligned with theoretical predictions and exhibits rapid redox kinetics.Consequently,the optimized CuCl/CuCl_(2) intrinsic system demonstrated a high S_(e) of 1.52 mV K^(−1) and a record-high normalized power density Pmax(ΔT)^(−2) of 0.399 mW m^(−2) K^(−2),surpassing previously reported intrinsic n-type thermocells and rivaling the performance of p-type pristine 0.4 M ferri/ferrocyanide systems.A prototype module comprising 30 p-n units successfully powered a line of light-emitting diodes or a thermohygrometer.This work introduces a valuable redox couple for further advancing high-performance thermocells and demonstrates a viable strategy for developing novel redox systems.
基金supported by the National Natural Science Foundation of China(Grant No.22175136)the State Key Laboratory of Electrical Insulation and Power Equipment(Grant No.EIPE23127)the Fundamental Research Funds for the Central Universities(xtr052024009,xtr052025002).
文摘Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.
