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PHOTOANODIC CHARACTERISTICS OF LAYER-STRUCTURED n-InSe IN POLYSULFIDE SOLUTION
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作者 Gong Qun SUN Zheng TAN Changchun Institute of Applied Chemistry,Academia Sinica,Changchun 130022. On Leave from Tonghua Normal College 《Chinese Chemical Letters》 SCIE CAS CSCD 1991年第2期161-162,共2页
The photoanodic characteristics of layer-structured n-InSe were investigated in polysulfide solution as a solid-liquid junction photoelectro- chemical cell(PEC).A quantum yield approaching about 90% and a photocurrent... The photoanodic characteristics of layer-structured n-InSe were investigated in polysulfide solution as a solid-liquid junction photoelectro- chemical cell(PEC).A quantum yield approaching about 90% and a photocurrent density as high as 30 mA/cm^2 were obtained.But the stabilization experiment demonstrates that about 8% of the photocurrent is attributed to a photoanodic corrosion ceaction. 展开更多
关键词 PHOTOANODIC CHARACTERISTICS OF LAYER-STRUCTURED n-inse IN POLYSULFIDE SOLUTION Figure
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