With the rapid advancement of optoelectronic technology,high-performance photodetectors are increasingly in demand in fields such as environmental monitoring,optical communication,and defense systems,where ultraviolet...With the rapid advancement of optoelectronic technology,high-performance photodetectors are increasingly in demand in fields such as environmental monitoring,optical communication,and defense systems,where ultraviolet detection is critical.However,conventional semiconductor materials suffer from limited UV-visible detection capabilities owing to their narrow bandgaps and high dark currents.To address these challenges,wide-bandgap semiconductors have emerged as promising alternatives.Here,we fabricated a horizontally structured n–n heterojunction photodetector by growingβ-Ga_(2)O_(3) on Si–GaN via plasma-enhanced chemical vapor deposition.The device exhibits a self-powered photocurrent of 3.5 nA at zero bias,enabled by the photovoltaic effect of the space charge region.Under 254-nm and 365-nm illumination,it exhibits rectification behavior,achieving a responsivity of 0.475 m A/W(0 V,220??W/cm~2 at 254 nm)and 257.6 mA/W(-5 V),respectively.Notably,the photodetector demonstrates a high photocurrent-to-dark current ratio of 10~5 under-5-V bias,highlighting its potential for self-powered and high-performance UV detection applications.展开更多
过渡金属氮化物因具有高的导电性、可调节的能带结构以及优异的稳定性,成为高性能析氢反应(HER)电催化剂的理想选择。然而,在合成过程中,过高或过低的氮化温度会导致材料的结构发生改变,进而影响其电化学活性。因此,调控适当的氮化温度...过渡金属氮化物因具有高的导电性、可调节的能带结构以及优异的稳定性,成为高性能析氢反应(HER)电催化剂的理想选择。然而,在合成过程中,过高或过低的氮化温度会导致材料的结构发生改变,进而影响其电化学活性。因此,调控适当的氮化温度至关重要。通过水热-煅烧工艺成功制备了自支撑Ni_(3)N/NiMoN异质结纳米片阵列(Ni_(3)N/NiMoN-450@CC)。采用XRD,SEM,XPS等测试手段对材料的形貌和组分进行表征,结果表明,Ni_(3)N/NiMoN异质结纳米片在碳布上均匀排列并形成阵列结构。通过线性扫描伏安法(LSV)和循环伏安法(CV)对材料的电化学性能进行观察,测试结果说明,Ni_(3)N/NiMoN-450@CC催化剂在碱性电解质中表现出良好的HER催化活性,电流密度为10 m A·cm-2时,其过电位为34 mV,并且在连续测试48 h后,电流密度几乎不变。展开更多
基金Project supported by the Joints Fund of the National Natural Science Foundation of China(Grant No.U23A20349)the Young Scientists Fund of the National Natural Science Foundation of China(Grant Nos.62204126,62305171,62304113)。
文摘With the rapid advancement of optoelectronic technology,high-performance photodetectors are increasingly in demand in fields such as environmental monitoring,optical communication,and defense systems,where ultraviolet detection is critical.However,conventional semiconductor materials suffer from limited UV-visible detection capabilities owing to their narrow bandgaps and high dark currents.To address these challenges,wide-bandgap semiconductors have emerged as promising alternatives.Here,we fabricated a horizontally structured n–n heterojunction photodetector by growingβ-Ga_(2)O_(3) on Si–GaN via plasma-enhanced chemical vapor deposition.The device exhibits a self-powered photocurrent of 3.5 nA at zero bias,enabled by the photovoltaic effect of the space charge region.Under 254-nm and 365-nm illumination,it exhibits rectification behavior,achieving a responsivity of 0.475 m A/W(0 V,220??W/cm~2 at 254 nm)and 257.6 mA/W(-5 V),respectively.Notably,the photodetector demonstrates a high photocurrent-to-dark current ratio of 10~5 under-5-V bias,highlighting its potential for self-powered and high-performance UV detection applications.
文摘过渡金属氮化物因具有高的导电性、可调节的能带结构以及优异的稳定性,成为高性能析氢反应(HER)电催化剂的理想选择。然而,在合成过程中,过高或过低的氮化温度会导致材料的结构发生改变,进而影响其电化学活性。因此,调控适当的氮化温度至关重要。通过水热-煅烧工艺成功制备了自支撑Ni_(3)N/NiMoN异质结纳米片阵列(Ni_(3)N/NiMoN-450@CC)。采用XRD,SEM,XPS等测试手段对材料的形貌和组分进行表征,结果表明,Ni_(3)N/NiMoN异质结纳米片在碳布上均匀排列并形成阵列结构。通过线性扫描伏安法(LSV)和循环伏安法(CV)对材料的电化学性能进行观察,测试结果说明,Ni_(3)N/NiMoN-450@CC催化剂在碱性电解质中表现出良好的HER催化活性,电流密度为10 m A·cm-2时,其过电位为34 mV,并且在连续测试48 h后,电流密度几乎不变。
