The dynamics of phase separation in H–He binary systems within gas giants such as Jupiter and Saturn exhibit remarkable complexity, yet lack systematic investigation. Through large-scale machine-learning-accelerated ...The dynamics of phase separation in H–He binary systems within gas giants such as Jupiter and Saturn exhibit remarkable complexity, yet lack systematic investigation. Through large-scale machine-learning-accelerated molecular dynamics simulations spanning broad temperature-pressure-composition(2000–10000 K, 1–7 Mbar,pure H to pure He) regimes, we systematically determine self and mutual diffusion coefficients in H–He systems and establish a six-dimensional framework correlating temperature, pressure, helium abundance, phase separation degree, diffusion coefficients, and anisotropy. Key findings reveal that hydrogen exhibits active directional migration with pronounced diffusion anisotropy, whereas helium passively aggregates in response. While the conventional mixing rule underestimates mutual diffusion coefficients by neglecting velocity cross-correlations,the assumption of an ideal thermodynamic factor(Q = 1) overestimates them due to unaccounted non-ideal thermodynamic effects—both particularly pronounced in strongly phase-separated regimes. Notably, hydrogen's dual role, anisotropic diffusion and bond stabilization via helium doping, modulates demixing kinetics. Large-scale simulations(216,000 atoms) propose novel phase-separation paradigms, such as “hydrogen bubble/wisp” formation, challenging the classical “helium rain” scenario, striving to bridge atomic-scale dynamics to planetary-scale phase evolution.展开更多
High-quality bonding of 4-inch GaAs and Si is achieved using plasma-activated bonding technology.The influence of Ar plasma activation on surface morphology is discussed.When the annealing temperature is 300℃,the bon...High-quality bonding of 4-inch GaAs and Si is achieved using plasma-activated bonding technology.The influence of Ar plasma activation on surface morphology is discussed.When the annealing temperature is 300℃,the bonding strength reaches a maximum of 6.2 MPa.In addition,a thermal stress model for GaAs/Si wafers is established based on finite element analysis to obtain the distribution of equivalent stress and deformation variables at different temperatures.The shape varia-tion of the wafer is directly proportional to the annealing temperature.At an annealing temperature of 400℃,the maximum protrusion of 4 inches GaAs/Si wafers is 3.6 mm.The interface of GaAs/Si wafers is observed to be dense and defect-free using a transmission electron microscope.The characterization of interface elements by X-ray energy dispersion spectroscopy indi-cates that the elements at the interface undergo mutual diffusion,which is beneficial for improving the bonding strength of the interface.There is an amorphous transition layer with a thickness of about 5 nm at the bonding interface.The preparation of Si-based GaAs heterojunctions can enrich the types of materials required for the development of integrated circuits,improve the performance of materials and devices,and promote the development of microelectronics technology.展开更多
The preparation and properties of asymmetric poly(vinyldiene fluoride)(PVDF)membranes are described in this study.Membranes were prepared from a casting solution of PVDF,N,N-dimethylacetamide(DMAc)solvent and water- s...The preparation and properties of asymmetric poly(vinyldiene fluoride)(PVDF)membranes are described in this study.Membranes were prepared from a casting solution of PVDF,N,N-dimethylacetamide(DMAc)solvent and water- soluble poly(ethylene glycol)(PEG)additives by immersing them in water as coagulant medium.Experiments showed that when PEG molecular weight increased,the changes in the resultant membranes morphologies and properties showed a transition point at PEG6000.This indicated that PEG with a relativel...展开更多
基金supported by the National University of Defense Technology Research Fund Projectthe National Natural Science Foundation of China under Grant Nos. 12047561 and 12104507+1 种基金the NSAF under Grant No. U1830206the Science and Technology Innovation Program of Hunan Province under Grant No. 2021RC4026。
文摘The dynamics of phase separation in H–He binary systems within gas giants such as Jupiter and Saturn exhibit remarkable complexity, yet lack systematic investigation. Through large-scale machine-learning-accelerated molecular dynamics simulations spanning broad temperature-pressure-composition(2000–10000 K, 1–7 Mbar,pure H to pure He) regimes, we systematically determine self and mutual diffusion coefficients in H–He systems and establish a six-dimensional framework correlating temperature, pressure, helium abundance, phase separation degree, diffusion coefficients, and anisotropy. Key findings reveal that hydrogen exhibits active directional migration with pronounced diffusion anisotropy, whereas helium passively aggregates in response. While the conventional mixing rule underestimates mutual diffusion coefficients by neglecting velocity cross-correlations,the assumption of an ideal thermodynamic factor(Q = 1) overestimates them due to unaccounted non-ideal thermodynamic effects—both particularly pronounced in strongly phase-separated regimes. Notably, hydrogen's dual role, anisotropic diffusion and bond stabilization via helium doping, modulates demixing kinetics. Large-scale simulations(216,000 atoms) propose novel phase-separation paradigms, such as “hydrogen bubble/wisp” formation, challenging the classical “helium rain” scenario, striving to bridge atomic-scale dynamics to planetary-scale phase evolution.
基金This work was financially supported by the National Nature Science Foundation of China(Grant No.61673222)the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(Grant No.23KJB430036)Wuxi University Research Start-up Fund for Introduced Talents(Grant No.2022r036).
文摘High-quality bonding of 4-inch GaAs and Si is achieved using plasma-activated bonding technology.The influence of Ar plasma activation on surface morphology is discussed.When the annealing temperature is 300℃,the bonding strength reaches a maximum of 6.2 MPa.In addition,a thermal stress model for GaAs/Si wafers is established based on finite element analysis to obtain the distribution of equivalent stress and deformation variables at different temperatures.The shape varia-tion of the wafer is directly proportional to the annealing temperature.At an annealing temperature of 400℃,the maximum protrusion of 4 inches GaAs/Si wafers is 3.6 mm.The interface of GaAs/Si wafers is observed to be dense and defect-free using a transmission electron microscope.The characterization of interface elements by X-ray energy dispersion spectroscopy indi-cates that the elements at the interface undergo mutual diffusion,which is beneficial for improving the bonding strength of the interface.There is an amorphous transition layer with a thickness of about 5 nm at the bonding interface.The preparation of Si-based GaAs heterojunctions can enrich the types of materials required for the development of integrated circuits,improve the performance of materials and devices,and promote the development of microelectronics technology.
基金the National Basic Research Program of China(No.2003CB615705)the National Natural Science Foundation of China(No.50433010)
文摘The preparation and properties of asymmetric poly(vinyldiene fluoride)(PVDF)membranes are described in this study.Membranes were prepared from a casting solution of PVDF,N,N-dimethylacetamide(DMAc)solvent and water- soluble poly(ethylene glycol)(PEG)additives by immersing them in water as coagulant medium.Experiments showed that when PEG molecular weight increased,the changes in the resultant membranes morphologies and properties showed a transition point at PEG6000.This indicated that PEG with a relativel...
