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Robust metal–organic framework with multiple traps for trace Xe/Kr separation 被引量:8
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作者 Huiping Zhang Yaling Fan +3 位作者 Rajamani Krishna Xuefeng Feng Li Wang Feng Luo 《Science Bulletin》 SCIE EI CSCD 2021年第11期1073-1079,M0003,共8页
Direct separation of Xe and Kr from air or used nuclear fuel(UNF)off-gas by means of porous adsorbents is of industrial importance but is a very challenging task.In this work,we show a robust metal-organic framework(M... Direct separation of Xe and Kr from air or used nuclear fuel(UNF)off-gas by means of porous adsorbents is of industrial importance but is a very challenging task.In this work,we show a robust metal-organic framework(MOF),namely ECUT-60,which renders not only high chemical stability,but also unique structure with multiple traps.This leads to the ultrahigh Xe adsorption capacity,exceeding most reported porous materials.Impressively,this MOF also enables high selectivity of Xe over Kr,CO2,O2,and N2,leading to the high-performance separation for trace quantitites of Xe/Kr from a simulated UNF reprocessing off-gas.The separation capability has been demonstrated by using dynamic breakthrough experiments,giving the record Xe uptake up to 70.4 mmol/kg and the production of 19.7 mmol/kg pure Xe.Consequently,ECUT-60 has promising potential in direct production of Xe from UNF off-gas or air.The separation mechanism,as unveiled by theoretical calculation,is attributed to the multiple traps in ECUT-60 that affords rigid restrict for Xe atom via van der Waals force. 展开更多
关键词 Xe/Kr separation MOFs UNF off-gas multiple traps
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Model Representation in Amorphous Metal Oxide Thin-Film Transistors:A Critical Review
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作者 Hassan Ul Huzaibi Su-Ting Han Meng Zhang 《npj Flexible Electronics》 2025年第1期1-58,共58页
This review examines modeling methodologies for amorphous metal oxide thin-film transistors(a-MO TFTs).It covers underlying device physics,charge transport mechanisms including multiple trapping and release,surface po... This review examines modeling methodologies for amorphous metal oxide thin-film transistors(a-MO TFTs).It covers underlying device physics,charge transport mechanisms including multiple trapping and release,surface potential,mobility,drain current,and capacitance models,alongside bias,temperature,and mechanical stress effects.Comparisons of compact models highlight trade-offs in accuracy,parameter extraction,and circuit-level validation.Future directions emphasize machine learning integration,unified multi-material frameworks,and strain-aware simulations. 展开更多
关键词 amorphous metal oxide thin film transistors modeling methodologies charge transport mechanisms surface potential machine learning transport mechanisms device physics multiple trapping release
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Quantum computing predicts particle trajectories in optical tweezers
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作者 Da-Wei Wang 《Light: Science & Applications》 2025年第8期2074-2076,共3页
A recent study demonstrated advancements in quantum computing by applying it to address a non-Hermitian optical manipulation problem.The emergence of exceptional points and the dynamics of optically trapped single or ... A recent study demonstrated advancements in quantum computing by applying it to address a non-Hermitian optical manipulation problem.The emergence of exceptional points and the dynamics of optically trapped single or multiple particles were simulated using a quantum computing approach. 展开更多
关键词 quantum computing exceptional points optically trapped single multiple particles emergence exceptional points non hermitian optical manipulation optical tweezers particle dynamics
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