Flexible resistive random access memory(RRAM) has shown great potential in wearable electronics.With tunable multilevel resistance states,flexible memristors could be used to mimic the bio-synapses for constructing hi...Flexible resistive random access memory(RRAM) has shown great potential in wearable electronics.With tunable multilevel resistance states,flexible memristors could be used to mimic the bio-synapses for constructing high-efficient wearable neuromorphic computing system.However,the flexible substrate has intrinsic disadvantages including low-tempe rature tolerance and poor complementary metal-oxidesemiconductor(CMOS) compatibility,which limit the development of flexible electronics.The physical vapor deposition(PVD) fabrication process could prepare RRAM without requirement of further treatment,which greatly simplified preparation steps and reduced the production costs.On the other hand,forming process,as a common pre-programing operation in RRAM,increases the energy consumption and limits the application scenarios of RRAM.Here,a NiO-based forming-free RRAM with low set voltage was fabricated via full PVD technique.The flexible device exhibited reliable re sistive switching characteristics under flat state even compre s sive and tensile states(R=10 mm).The tunable multilevel resistance states(5 levels) could be obtained by controlling the compliance current.Besides,synaptic plasticities also were verified in this device.The flexible NiO-based RRAM shows great potential in wearable forming-free multibit memo ry and neuromorphic computing electronics.展开更多
Designing new materials with high-performance resistive switching(RS)behaviors and/or developing alternative means to modulate the RS behaviors are of great significance for information storage and neuromorphic comput...Designing new materials with high-performance resistive switching(RS)behaviors and/or developing alternative means to modulate the RS behaviors are of great significance for information storage and neuromorphic computing.Herein,we present a novel strategy to design and synthesize furan-annulated naphthalenes for high-performance digital and analog RS behaviors through controlling substituents.By introducing an electron acceptor of trifluoromethyl on the phenyl ring,3-phenyl-4-(4-trifluoromethylphenyl)-2H-naphtho[1,8-bc]furan(TPNF)is synthesized with donor–acceptor(D–A)pairs by utilizing the electron donor of furyl in the naphthalene.Owing to the constructed D–A systems where electrons can be transported under the external bias voltage,the prepared TPNF thin films demonstrate high-performance bipolar digital RS behaviors with multilevel storage characteristics.On the other hand,if the substituent on the phenyl ring is replaced by an electron donor of methoxy,4-(4-methoxyphenyl)-3-phenyl-2H-naphtho[1,8-bc]furan(MPNF)can be constructed with only electron-donor units of furyl and methoxy.The fabricated MPNF thin films show analog RS behaviors owing to the carrier trapping/detrapping from the nucleophilic trapping sites generated from the electron-donor units.The analog memristors demonstrate synaptic functions with high linearity of conductance modulation,which is highly desirable for neuromorphic computing.Such synaptic memristors based on MPNF are completely capable of recognizing digit images with high accuracy(95.2%)and implementing decimal arithmetic of addition,subtraction,multiplication,and division operations.This study provides a feasible way to modulate the RS properties by the strategy of introducing different substituents,demonstrating promising applications of such well-designed organic semiconductors for multilevel storage and neuromorphic computing.展开更多
The demand of flexible neuromorphic computing electronics is increasing with the rapid development of wearable artificial intelligent devices.The flexible resistive random-access memory(RRAM)is one excellent candidate...The demand of flexible neuromorphic computing electronics is increasing with the rapid development of wearable artificial intelligent devices.The flexible resistive random-access memory(RRAM)is one excellent candidate of highdensity storage devices.However,due to the limitations of fabrication process,materials system and device structure,it is difficult to prepare flexible 3D highdensity network for neuromorphic computing.In this paper,a 3D flexible memristors network is developed via low-temperature atomic layer deposition(ALD)at 130C,with potential of extending to various flexible electronics.The typical bipolar switching characteristics are verified in RRAM units of 3D network,including first,second and third layers.Besides binary storage,the multibit storage in single unit is demonstrated and the storage density is further increased.As a connection link between binary storage and brain-inspired neuromorphic computing,the multibit storage capability paves the way for the tunable synaptic plasticity,for example,long-term potentiation/depression(LTP/LTD).The 3D memristors network successfully mimicked the typical neuromorphic functionality and realized ultra-multi conductance states modulation under 600 spikes.The robust mechanical flexibility is further demonstrated via LTP/LTD emulation under bending states(radius=10 mm).The 3D flexible memristors network shows significant potential of applications in high-performance,high-density and reliable wearable neuromorphic computing system.展开更多
基金supported by the National Natural Science Foundation of China(Nos.61704030 and 61522404)the Shanghai Rising-Star Program(No.19QA1400600)+1 种基金the Program of Shanghai Subject Chief Scientist(No.18XD1402800)the Support Plans for the Youth Top-Notch Talents of China。
文摘Flexible resistive random access memory(RRAM) has shown great potential in wearable electronics.With tunable multilevel resistance states,flexible memristors could be used to mimic the bio-synapses for constructing high-efficient wearable neuromorphic computing system.However,the flexible substrate has intrinsic disadvantages including low-tempe rature tolerance and poor complementary metal-oxidesemiconductor(CMOS) compatibility,which limit the development of flexible electronics.The physical vapor deposition(PVD) fabrication process could prepare RRAM without requirement of further treatment,which greatly simplified preparation steps and reduced the production costs.On the other hand,forming process,as a common pre-programing operation in RRAM,increases the energy consumption and limits the application scenarios of RRAM.Here,a NiO-based forming-free RRAM with low set voltage was fabricated via full PVD technique.The flexible device exhibited reliable re sistive switching characteristics under flat state even compre s sive and tensile states(R=10 mm).The tunable multilevel resistance states(5 levels) could be obtained by controlling the compliance current.Besides,synaptic plasticities also were verified in this device.The flexible NiO-based RRAM shows great potential in wearable forming-free multibit memo ry and neuromorphic computing electronics.
基金supported by the grants from the National Natural Science Foundation of China(No.62474118,52233014,and 62411560160)the Sichuan Science and Technology Program(No.2022ZYD0041)the PolyU grants(1-W22S and 1-CE0H).
文摘Designing new materials with high-performance resistive switching(RS)behaviors and/or developing alternative means to modulate the RS behaviors are of great significance for information storage and neuromorphic computing.Herein,we present a novel strategy to design and synthesize furan-annulated naphthalenes for high-performance digital and analog RS behaviors through controlling substituents.By introducing an electron acceptor of trifluoromethyl on the phenyl ring,3-phenyl-4-(4-trifluoromethylphenyl)-2H-naphtho[1,8-bc]furan(TPNF)is synthesized with donor–acceptor(D–A)pairs by utilizing the electron donor of furyl in the naphthalene.Owing to the constructed D–A systems where electrons can be transported under the external bias voltage,the prepared TPNF thin films demonstrate high-performance bipolar digital RS behaviors with multilevel storage characteristics.On the other hand,if the substituent on the phenyl ring is replaced by an electron donor of methoxy,4-(4-methoxyphenyl)-3-phenyl-2H-naphtho[1,8-bc]furan(MPNF)can be constructed with only electron-donor units of furyl and methoxy.The fabricated MPNF thin films show analog RS behaviors owing to the carrier trapping/detrapping from the nucleophilic trapping sites generated from the electron-donor units.The analog memristors demonstrate synaptic functions with high linearity of conductance modulation,which is highly desirable for neuromorphic computing.Such synaptic memristors based on MPNF are completely capable of recognizing digit images with high accuracy(95.2%)and implementing decimal arithmetic of addition,subtraction,multiplication,and division operations.This study provides a feasible way to modulate the RS properties by the strategy of introducing different substituents,demonstrating promising applications of such well-designed organic semiconductors for multilevel storage and neuromorphic computing.
基金This work was supported by the NSFC(61704030 and 61522404)Shanghai Rising-Star Program(19QA1400600)+1 种基金the Program of Shanghai Subject Chief Scientist(18XD1402800)the Support Plans for the Youth Top-Notch Talents of China.
文摘The demand of flexible neuromorphic computing electronics is increasing with the rapid development of wearable artificial intelligent devices.The flexible resistive random-access memory(RRAM)is one excellent candidate of highdensity storage devices.However,due to the limitations of fabrication process,materials system and device structure,it is difficult to prepare flexible 3D highdensity network for neuromorphic computing.In this paper,a 3D flexible memristors network is developed via low-temperature atomic layer deposition(ALD)at 130C,with potential of extending to various flexible electronics.The typical bipolar switching characteristics are verified in RRAM units of 3D network,including first,second and third layers.Besides binary storage,the multibit storage in single unit is demonstrated and the storage density is further increased.As a connection link between binary storage and brain-inspired neuromorphic computing,the multibit storage capability paves the way for the tunable synaptic plasticity,for example,long-term potentiation/depression(LTP/LTD).The 3D memristors network successfully mimicked the typical neuromorphic functionality and realized ultra-multi conductance states modulation under 600 spikes.The robust mechanical flexibility is further demonstrated via LTP/LTD emulation under bending states(radius=10 mm).The 3D flexible memristors network shows significant potential of applications in high-performance,high-density and reliable wearable neuromorphic computing system.
