Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial g...Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi- wafer 3C-SiC films on Si（100） substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition （HWLPCVD） system which was designed to be have a high-throughput, multi-wafer （3×2-inch） capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%-7% and 6.7%~8%, respectively, and within a run, the deviations of wafer-to- wafer thickness and sheet resistance are tess than 1% and 0.8%, respectively.展开更多
We report the latest results of the 3C-SiC layer growth on Si（100）substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition（HWLPCVD）system with a rotating susceptor that...We report the latest results of the 3C-SiC layer growth on Si（100）substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition（HWLPCVD）system with a rotating susceptor that was designed to support up to three 50 mm-diameter wafers.3C-SiC film properties of the intrawafer and the wafer-to-wafer,including crystalline morphologies and electronics,are characterized systematically. Intra-wafer layer thickness and sheet resistance uniformity（σ/mean）of～3.40%and～5.37%have been achieved in the 3×50 mm configuration.Within a run,the deviations of wafer-to-wafer thickness and sheet resistance are less than 4%and 4.24%,respectively.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60876003 and 60606003)the Science Foundation of the Chinese Academy of Sciences(Grant No.yz200702)
文摘Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi- wafer 3C-SiC films on Si（100） substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition （HWLPCVD） system which was designed to be have a high-throughput, multi-wafer （3×2-inch） capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%-7% and 6.7%~8%, respectively, and within a run, the deviations of wafer-to- wafer thickness and sheet resistance are tess than 1% and 0.8%, respectively.
基金Project supported by the National Natural Science Foundation of China(No60876003)the Chinese Academy of Sciences(No Y072011000)+1 种基金the Beijing Municipal Science&Technology Commission(NoD09080300500903)the Knowledge Innovation Program of the Chinese Academy of Sciences(NoISCAS2008T04)
文摘We report the latest results of the 3C-SiC layer growth on Si（100）substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition（HWLPCVD）system with a rotating susceptor that was designed to support up to three 50 mm-diameter wafers.3C-SiC film properties of the intrawafer and the wafer-to-wafer,including crystalline morphologies and electronics,are characterized systematically. Intra-wafer layer thickness and sheet resistance uniformity（σ/mean）of～3.40%and～5.37%have been achieved in the 3×50 mm configuration.Within a run,the deviations of wafer-to-wafer thickness and sheet resistance are less than 4%and 4.24%,respectively.
