To optimize turn on velocity of the SiC LIMS,we proposed a new structure for the LIMS that incorporates an opti-mized n^(+)layer and a multi-light triggered electrode design for the anode.The chip size is 5.5 mm×...To optimize turn on velocity of the SiC LIMS,we proposed a new structure for the LIMS that incorporates an opti-mized n^(+)layer and a multi-light triggered electrode design for the anode.The chip size is 5.5 mm×5.5 mm in dimension.The experiment results indicate that the saturation laser energy required to trigger the prepared SiC LIMS has been decreased from 1.8 mJ to 40μJ,with the forward blocking voltage of the prepared SiC LIMSs capable of withstanding over 7000 V.The leakage current is about 0.3μA at room temperature,and the output current density achieves 4.25 kA/cm^(2)(with di/dt larger than 20 kA/μs).展开更多
基金supported by Rector’s fund of China Academy of Engineering Physics(Grant No.YZJJZQ2022002)the National Natural Science Foundation of China(Grant No.61504127).
文摘To optimize turn on velocity of the SiC LIMS,we proposed a new structure for the LIMS that incorporates an opti-mized n^(+)layer and a multi-light triggered electrode design for the anode.The chip size is 5.5 mm×5.5 mm in dimension.The experiment results indicate that the saturation laser energy required to trigger the prepared SiC LIMS has been decreased from 1.8 mJ to 40μJ,with the forward blocking voltage of the prepared SiC LIMSs capable of withstanding over 7000 V.The leakage current is about 0.3μA at room temperature,and the output current density achieves 4.25 kA/cm^(2)(with di/dt larger than 20 kA/μs).
