The use of either lossless snubbers or resonant zero voltage switching (ZVS) and zero current switching (ZCS) techniques can increase efficiency and reduce electromagnetic inter ference (EMI) and noise of industrial p...The use of either lossless snubbers or resonant zero voltage switching (ZVS) and zero current switching (ZCS) techniques can increase efficiency and reduce electromagnetic inter ference (EMI) and noise of industrial power equipment at high switching frequencies. This paper presents an adaptive composite soft switching configuration which combines snubber functions and resonant ZCS circuits for switches in inverters using power bridge leg modules. Simulation and experimental results are included.展开更多
The novel BaTiO3/BiFeO3/TiO2 multilayer heterojunction is prepared on a fluorine-doped tinoxide(FTO) substrate by the sol–gel method. The results indicate that the Pt/Ba TiO3/BiFeO3/TiO2/FTO heterojunction exhibits s...The novel BaTiO3/BiFeO3/TiO2 multilayer heterojunction is prepared on a fluorine-doped tinoxide(FTO) substrate by the sol–gel method. The results indicate that the Pt/Ba TiO3/BiFeO3/TiO2/FTO heterojunction exhibits stable bipolar resistive switching characteristic, good retention performance, and reversal characteristic. Under different pulse voltages and light fields, four stable resistance states can also be realized. The analysis shows that the main conduction mechanism of the resistive switching characteristic of the heterojunction is space charge limited current(SCLC) effect. After the comprehensive analysis of the band diagram and the P–E ferroelectric property of the multilayer heterojunction, we can deduce that the SCLC is formed by the effect of the oxygen vacancy which is controlled by ferroelectric polarizationmodulated change of interfacial barrier. And the effective photo-generated carrier also plays a regulatory role in resistance state(RS), which is formed by the double ferroelectric layer Ba TiO3/BiFeO3 under different light fields. This research is of potential application values for developing the multi-state non-volatile resistance random access memory(RRAM) devices based on ferroelectric materials.展开更多
A fractional frequency divider based on phase switching and negative feedback delta-sigma modulator(NF-DSM) is presented. The phase switching circuit, realized by switching 8 signals generated by a divider-by-4 circui...A fractional frequency divider based on phase switching and negative feedback delta-sigma modulator(NF-DSM) is presented. The phase switching circuit, realized by switching 8 signals generated by a divider-by-4 circuit, is adopted to reduce the frequency division step. The NF-DSM, which can obtain smooth output spectra, is proposed to generate the fractional part of the division ratio, moreover, the integer part of the division ratio is realized by a divider-by-2/3 circuit chain. Fabricated in TSMC 0.18 μm RF CMOS technology, the fractional frequency divider achieves a measured operation frequency from 0.5 GHz to 8 GHz. With a 1.8 V supply voltage, the maximum current consumption of the whole divider is 17.5 mA, and the chip area is 0.58 mm^2, including the pads.展开更多
Compared with the traditional SCR phase-shift regulated power supply, a new type of power semiconductor , noncrystalline state magnetic material and pulse width modulation technology, high-power switching supply has m...Compared with the traditional SCR phase-shift regulated power supply, a new type of power semiconductor , noncrystalline state magnetic material and pulse width modulation technology, high-power switching supply has many advantages： small volume, high converting efficiency, good dynamic performance, small harmonic componont and small pollution to AC supply.展开更多
This paper proposes a zer o current and zero voltage switching (ZCZVS) PWM Boost full bridge (FB) conve rter. With series inductors, the leading switches can realize zero current swit ching (ZCS) in a wide load ra...This paper proposes a zer o current and zero voltage switching (ZCZVS) PWM Boost full bridge (FB) conve rter. With series inductors, the leading switches can realize zero current swit ching (ZCS) in a wide load range using the energy of the output capacitor. Ma king use of parasitic capacitors of the lagging switches and parallel auxiliary i nductance with the primary winding of the transformer, the lagging switches can realize zero voltage switching (ZVS) under any load. Compared with the ZCS PWM Boost FB converter, the new converter has no current duty cycle loss. Operat ional principle and parameter design are analyzed. Experimental results verify the effectiveness of the proposed converter.展开更多
Resonant dc link inverter is a zero voltage switching inverter.This paper proposes a new cascade resonant dc link inverter that consists of two power converter units,a rugged resonant dc link and an inverter bridge.A ...Resonant dc link inverter is a zero voltage switching inverter.This paper proposes a new cascade resonant dc link inverter that consists of two power converter units,a rugged resonant dc link and an inverter bridge.A detailed analysis of the soft switching process in the rugged resonant dc link and the realization of pulse width modulation (PWM) control strategy in the inverter bridge are presented in the paper. The operation modes, the input and output features and the interface between the rugged resonant dc link and the inverter bridge are also discussed. The relationship between the circuit features and the parameters is deduced, which provides a theoretical base for the circuit design. The analysis results show that the rugged resonant dc link can be regulated by open-loop control and the control of the rugged resonant dc link is independent of that of the inverter bridge, which makes the inverter control easy and realizable.The circuit of the inverter is simulated with a standard circuit simulation program PSPICE. The simulation results are corresponding to the predicted ones of the circuit analysis.展开更多
The polymethyl methacrylate （PMMA） film doped with an azo dye ethyl-red （ER） film is employed to demonstrate the properties of an all-optical switch by its photoinduced dichroism and birefringence. We show how to ...The polymethyl methacrylate （PMMA） film doped with an azo dye ethyl-red （ER） film is employed to demonstrate the properties of an all-optical switch by its photoinduced dichroism and birefringence. We show how to enhance remarkably the modulation depth of all-optical switches almost to 100% by using two linear polarization beams： one beam is inclined at 45° with respect to the probing beam and serves as a pumping beam, and the other beam is perpendicular to the probing beam and used as an erasing beam. Furthermore, a maximum-to-minimum output intensity ratio of 2000：1 is achieved in experiment, which is very useful and important for optical storages and image displays.展开更多
Resistive switching random access memory(RRAM) is considered as one of the potential candidates for next-generation memory. However, obtaining an RRAM device with comprehensively excellent performance, such as high re...Resistive switching random access memory(RRAM) is considered as one of the potential candidates for next-generation memory. However, obtaining an RRAM device with comprehensively excellent performance, such as high retention and endurance, low variations, as well as CMOS compatibility, etc., is still an open question. In this work, we introduce an insert TaO_(x) layer into HfO_(x)-based RRAM to optimize the device performance. Attributing to robust filament formed in the TaO_(x) layer by a forming operation, the local-field and thermal enhanced effect and interface modulation has been implemented simultaneously. Consequently, the RRAM device features large windows(> 10^(3)), fast switching speed(-10 ns), steady retention(> 72h), high endurance(> 10^(8) cycles), and excellent uniformity of both cycle-to-cycle and device-to-device. These results indicate that inserting the TaO_(x) layer can significantly improve HfO_(x)-based device performance, providing a constructive approach for the practical application of RRAM.展开更多
Resistive random-access memory(RRAM)is a promising technology to develop nonvolatile memory and artificial synaptic devices for brain-inspired neuromorphic computing.Here,we have developed a STO:Ag/SiO_(2) bilayer bas...Resistive random-access memory(RRAM)is a promising technology to develop nonvolatile memory and artificial synaptic devices for brain-inspired neuromorphic computing.Here,we have developed a STO:Ag/SiO_(2) bilayer based memristor that has exhibited a filamentary resistive switching with stable endurance and long-term data retention ability.The memristor also exhibits a tunable resistance modulation under positive and negative pulse trains,which could fully mimic the potentiation and depression behavior like a bio-synapse.Several synaptic plasticity functions,including long-term potentiation(LTP)and long-term depression(LTD),paired-pulsed facilitation(PPF),spike-rate-dependent-plasticity(SRDP),and post-tetanic potentiation(PTP),are faithfully implemented with the fabricated memristor.Moreover,to demonstrate the feasibility of our memristor synapse for neuromorphic applications,spike-timedependent plasticity(STDP)is also investigated.Based on conductive atomic force microscopy observations and electrical transport model analyses,it can be concluded that it is the controlled formation and rupture of Ag filaments that are responsible for the resistive switching while exhibiting a switching ratio of~10;along with a good endurance and stability suitable for nonvolatile memory applications.Before fully electroforming,the gradual conductance modulation of Ag/STO:Ag/SiO_(2)/p^(++)-Si memristor can be realized,and the working mechanism could be explained by the succeeding growth and contraction of Ag filaments promoted by a redox reaction.This newly fabricated memristor may enable the development of nonvolatile memory and realize controllable resistance/weight modulation when applied as an artificial synapse for neuromorphic computing.展开更多
Optimized are the label extinction ratio and dispersion compensation of an optical label switching transmission system,which employs 40-Gb/s return to zero differential phase shift keying(RZ-DPSK)payload labeled with ...Optimized are the label extinction ratio and dispersion compensation of an optical label switching transmission system,which employs 40-Gb/s return to zero differential phase shift keying(RZ-DPSK)payload labeled with 622-Mb/s amplitude shift keying(ASK)control data.In our scheme,the receiver sensitivities of payload and label achieves-27.8dBm and-33.5dBm,respectively.After transmitted over 40km,60km and 80km single mode fiber(SMF)(with dispersion compensation)respectively,the payload can be recovered with no power penalty,while the label can be recovered with less than 2dB penalty.展开更多
In this paper, an actively Q-switched wavelength injection locking random fiber laser(RFL) based on random phase-shifted fiber Bragg grating(RPS-FBG) is proposed, and the performance of the laser is verified by experi...In this paper, an actively Q-switched wavelength injection locking random fiber laser(RFL) based on random phase-shifted fiber Bragg grating(RPS-FBG) is proposed, and the performance of the laser is verified by experiments. Within the reflection bandwidth range of RPS-FBG, spanning from 1 549.2 nm to 1 549.9 nm, different laser modes with stable central wavelength and peak power can be selectively chosen by varying the injected light wavelength. The power fluctuation within 1 h is less than 0.1 d Bm, and the central wavelength drift is less than 0.02 nm. When the pump power increases from 90 mW to 300 mW, the pulse width decreases from 3.2 μs to 1.5 μs, and the pulse repetition frequency is 20 kHz. The RFL can reach a stable locking state at the lowest pump power of 100 mW and the lowest injection power of 3 d Bm. When the wavelength is locked, the output pulse is a single pulse. On the contrary, the unlocked output pulse is multi-pulse. The laser has the characteristics of high wavelength tunability in the reflection range of RPS-FBG and it can be an ideal light source in the fields of laser imaging and pulse coding.展开更多
In this paper the results from investigations of the nonlinear refractive index and nonlinear absorption coefficient of Bromophenol Blue using the Z-scan technique with a continuous wave laser beam at wavelengths 488 ...In this paper the results from investigations of the nonlinear refractive index and nonlinear absorption coefficient of Bromophenol Blue using the Z-scan technique with a continuous wave laser beam at wavelengths 488 nm and 514 nm are presented. It was observed that the material exhibited reverse saturation absorption and self defocusing behavior. It was found that the increase in solution concentration resulted in linear increase of the nonlinear refractive index. A pump and probe technique was used to obtain the absorption spectrum of triplet state. Furthermore the nonlinear absorption effect was used to demonstrate all optical switching.展开更多
Different bilayer structures of HfO_(x)/Ti(TiO_(x)) are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ra...Different bilayer structures of HfO_(x)/Ti(TiO_(x)) are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ray photoelectron spectroscopy,and the oxygen vacancies are analyzed. Highly improved on/off ratio(~104) and much uniform switching parameters are observed for bilayer structures compared to single layer HfO_(x) sample, which can be attributed to the modulation of oxygen vacancies at the interface and better control of the growth of filaments. Furthermore, the reliability of the prepared samples is investigated. The carrier conduction behaviors of HfO_(x)-based samples can be attributed to the trapping and de-trapping process of oxygen vacancies and a filamentary model is proposed. In addition, the rupture of filaments during the reset process for the bilayer structures occur at the weak points near the interface by the recovery of oxygen vacancies accompanied by the variation of barrier height. The re-formation of fixed filaments due to the residual filaments as lightning rods results in the better switching performance of the bilayer structure.展开更多
This paper presents a unique voltage-raising topology for a single-phase seven-level inverter with triple output voltage gain using single input source and two switched capacitors.The output voltage has been boosted u...This paper presents a unique voltage-raising topology for a single-phase seven-level inverter with triple output voltage gain using single input source and two switched capacitors.The output voltage has been boosted up to three times the value of input voltage by configuring the switched capacitors in series and parallel combinations which eliminates the use of additional step-up converters and transformers.The selective harmonic elimination(SHE)approach is used to remove the lower-order harmonics.The optimal switching angles for SHE is determined using the genetic algorithm.These switching angles are com-bined with a level-shifted pulse width modulation(PWM)technique for pulse generation,resulting in reduced total harmonic distortion(THD).A detailed com-parison has been made against other relevant seven-level inverter topologies in terms of the number of switches,drivers,diodes,capacitors,and boosting facil-ities to emphasize the benefits of the proposed model.The proposed topology is simulated using MATLAB/SIMULINK and an experimental prototype has been developed to validate the results.The Digital Signal Processing(DSP)TMS320F2812 board is used to generate the switching pulses for the proposed technique and the experimental results concur with the simulated model outputs.展开更多
Direct torque control (DTC) of Switched reluctance motor is known straightforward control structure with similar execution to that of field situated control strategies. In any case, the part of ideal determination of ...Direct torque control (DTC) of Switched reluctance motor is known straightforward control structure with similar execution to that of field situated control strategies. In any case, the part of ideal determination of the voltage space vector is one of the weakest focuses in a routine DTC drive because of adjustable switching frequency and high torque ripple. In this paper, ideal choice of voltage space vectors is accomplished utilizing ANFIS (Adaptive Neuro Fuzzy Inference System) with space vector Modulation. SVM-DTC gives consistent switching frequency and the proposed ANFIS controller’s structure manages the torque and stator flux error signals through the fuzzy deduction to get a yield that takes the type of space voltage vector. Simulation results accept the proposed evolutionary system with quick torque and flux reaction with minimized torque ripple and flux ripple.展开更多
We present a novel approach to resolving the vergence–accommodation conflict(VAC)in extended reality(XR)optics by introducing a quarter-waveplate(QWP)geometric phase lens(GPL)capable of triple wavefront modulation—f...We present a novel approach to resolving the vergence–accommodation conflict(VAC)in extended reality(XR)optics by introducing a quarter-waveplate(QWP)geometric phase lens(GPL)capable of triple wavefront modulation—focusing,defocusing,and non-modulating at infinity.This polarization-driven behavior is interpreted using contour trajectories on the Poincarésphere and compared against conventional half-waveplate(HWP)GPLs.Leveraging this property,we propose a bi-stacked QWP GPL module that enables nine distinct varifocal states through polarization-controlled input selection and output filtering.In contrast,HWP-based modules under equivalent stacking conditions are limited to four focal states.The QWP GPL module supports a compact varifocal system spanning a continuous depth range from 24.27 cm to infinity,with a 0.3-diopter interval aligned with the human visual comfort zone.Importantly,the number of representable focal depths scales as 3^(n)for n stacked layers,offering a(1.5)^(n)-fold improvement over the 2^(n)scaling of HWP systems.This enables finer depth transitions using fewer lens units while retaining both compactness and optical modularity,establishing a depth-switchable imaging platform that enhances visual comfort and depth fidelity in next-generation XR display systems.展开更多
基金Supported by the Zhejiang Province Natural Science Foundationthe Royal Society of U.K.
文摘The use of either lossless snubbers or resonant zero voltage switching (ZVS) and zero current switching (ZCS) techniques can increase efficiency and reduce electromagnetic inter ference (EMI) and noise of industrial power equipment at high switching frequencies. This paper presents an adaptive composite soft switching configuration which combines snubber functions and resonant ZCS circuits for switches in inverters using power bridge leg modules. Simulation and experimental results are included.
基金Project supported by the Scientific Research Program of Hunan Provincial Education Department,China(Grant No.18C0232)the International Cooperative Extension Program of Changsha University of Science and Technology,China(Grant No.2019IC35)
文摘The novel BaTiO3/BiFeO3/TiO2 multilayer heterojunction is prepared on a fluorine-doped tinoxide(FTO) substrate by the sol–gel method. The results indicate that the Pt/Ba TiO3/BiFeO3/TiO2/FTO heterojunction exhibits stable bipolar resistive switching characteristic, good retention performance, and reversal characteristic. Under different pulse voltages and light fields, four stable resistance states can also be realized. The analysis shows that the main conduction mechanism of the resistive switching characteristic of the heterojunction is space charge limited current(SCLC) effect. After the comprehensive analysis of the band diagram and the P–E ferroelectric property of the multilayer heterojunction, we can deduce that the SCLC is formed by the effect of the oxygen vacancy which is controlled by ferroelectric polarizationmodulated change of interfacial barrier. And the effective photo-generated carrier also plays a regulatory role in resistance state(RS), which is formed by the double ferroelectric layer Ba TiO3/BiFeO3 under different light fields. This research is of potential application values for developing the multi-state non-volatile resistance random access memory(RRAM) devices based on ferroelectric materials.
基金Supported by the National Natural Science Foundation of China(No.61674037)National Key Research and Development Program of China(No.2016YFC0800400)the Priority Academic Program Development of Jiangsu Higher Education Institutions
文摘A fractional frequency divider based on phase switching and negative feedback delta-sigma modulator(NF-DSM) is presented. The phase switching circuit, realized by switching 8 signals generated by a divider-by-4 circuit, is adopted to reduce the frequency division step. The NF-DSM, which can obtain smooth output spectra, is proposed to generate the fractional part of the division ratio, moreover, the integer part of the division ratio is realized by a divider-by-2/3 circuit chain. Fabricated in TSMC 0.18 μm RF CMOS technology, the fractional frequency divider achieves a measured operation frequency from 0.5 GHz to 8 GHz. With a 1.8 V supply voltage, the maximum current consumption of the whole divider is 17.5 mA, and the chip area is 0.58 mm^2, including the pads.
文摘Compared with the traditional SCR phase-shift regulated power supply, a new type of power semiconductor , noncrystalline state magnetic material and pulse width modulation technology, high-power switching supply has many advantages： small volume, high converting efficiency, good dynamic performance, small harmonic componont and small pollution to AC supply.
文摘This paper proposes a zer o current and zero voltage switching (ZCZVS) PWM Boost full bridge (FB) conve rter. With series inductors, the leading switches can realize zero current swit ching (ZCS) in a wide load range using the energy of the output capacitor. Ma king use of parasitic capacitors of the lagging switches and parallel auxiliary i nductance with the primary winding of the transformer, the lagging switches can realize zero voltage switching (ZVS) under any load. Compared with the ZCS PWM Boost FB converter, the new converter has no current duty cycle loss. Operat ional principle and parameter design are analyzed. Experimental results verify the effectiveness of the proposed converter.
文摘Resonant dc link inverter is a zero voltage switching inverter.This paper proposes a new cascade resonant dc link inverter that consists of two power converter units,a rugged resonant dc link and an inverter bridge.A detailed analysis of the soft switching process in the rugged resonant dc link and the realization of pulse width modulation (PWM) control strategy in the inverter bridge are presented in the paper. The operation modes, the input and output features and the interface between the rugged resonant dc link and the inverter bridge are also discussed. The relationship between the circuit features and the parameters is deduced, which provides a theoretical base for the circuit design. The analysis results show that the rugged resonant dc link can be regulated by open-loop control and the control of the rugged resonant dc link is independent of that of the inverter bridge, which makes the inverter control easy and realizable.The circuit of the inverter is simulated with a standard circuit simulation program PSPICE. The simulation results are corresponding to the predicted ones of the circuit analysis.
基金Project supported by the National Natural Science Foundation of China(Grant No.10774152)the Science and Technology Foundation of Guangzhou City,China(Grant No.2008J1-C021) the Research Fund for the Doctoral Program of Higher Education of China(Grant No.20070055103)
文摘The polymethyl methacrylate （PMMA） film doped with an azo dye ethyl-red （ER） film is employed to demonstrate the properties of an all-optical switch by its photoinduced dichroism and birefringence. We show how to enhance remarkably the modulation depth of all-optical switches almost to 100% by using two linear polarization beams： one beam is inclined at 45° with respect to the probing beam and serves as a pumping beam, and the other beam is perpendicular to the probing beam and used as an erasing beam. Furthermore, a maximum-to-minimum output intensity ratio of 2000：1 is achieved in experiment, which is very useful and important for optical storages and image displays.
基金supported by the National Key R&D Program of China under Grant No.2018YFA0701500the National Natural Science Foundation of China under Grant Nos.61825404,U20A20220,61732020,and 61851402+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No.XDB44000000the China Postdoctoral Science Foundation under Grant No.2020M681167。
文摘Resistive switching random access memory(RRAM) is considered as one of the potential candidates for next-generation memory. However, obtaining an RRAM device with comprehensively excellent performance, such as high retention and endurance, low variations, as well as CMOS compatibility, etc., is still an open question. In this work, we introduce an insert TaO_(x) layer into HfO_(x)-based RRAM to optimize the device performance. Attributing to robust filament formed in the TaO_(x) layer by a forming operation, the local-field and thermal enhanced effect and interface modulation has been implemented simultaneously. Consequently, the RRAM device features large windows(> 10^(3)), fast switching speed(-10 ns), steady retention(> 72h), high endurance(> 10^(8) cycles), and excellent uniformity of both cycle-to-cycle and device-to-device. These results indicate that inserting the TaO_(x) layer can significantly improve HfO_(x)-based device performance, providing a constructive approach for the practical application of RRAM.
基金financially supported by the National Science Funds for Excellent Young Scholars of China(no.61822106)the Natural Science Foundation of China(no.U19A2070)。
文摘Resistive random-access memory(RRAM)is a promising technology to develop nonvolatile memory and artificial synaptic devices for brain-inspired neuromorphic computing.Here,we have developed a STO:Ag/SiO_(2) bilayer based memristor that has exhibited a filamentary resistive switching with stable endurance and long-term data retention ability.The memristor also exhibits a tunable resistance modulation under positive and negative pulse trains,which could fully mimic the potentiation and depression behavior like a bio-synapse.Several synaptic plasticity functions,including long-term potentiation(LTP)and long-term depression(LTD),paired-pulsed facilitation(PPF),spike-rate-dependent-plasticity(SRDP),and post-tetanic potentiation(PTP),are faithfully implemented with the fabricated memristor.Moreover,to demonstrate the feasibility of our memristor synapse for neuromorphic applications,spike-timedependent plasticity(STDP)is also investigated.Based on conductive atomic force microscopy observations and electrical transport model analyses,it can be concluded that it is the controlled formation and rupture of Ag filaments that are responsible for the resistive switching while exhibiting a switching ratio of~10;along with a good endurance and stability suitable for nonvolatile memory applications.Before fully electroforming,the gradual conductance modulation of Ag/STO:Ag/SiO_(2)/p^(++)-Si memristor can be realized,and the working mechanism could be explained by the succeeding growth and contraction of Ag filaments promoted by a redox reaction.This newly fabricated memristor may enable the development of nonvolatile memory and realize controllable resistance/weight modulation when applied as an artificial synapse for neuromorphic computing.
基金National Natural Science Foundation of China(60677004)National"863"Program Project(2007AA01Z260)+1 种基金Key Project of Chinese Ministry of Education(107011)Teaching and Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry
文摘Optimized are the label extinction ratio and dispersion compensation of an optical label switching transmission system,which employs 40-Gb/s return to zero differential phase shift keying(RZ-DPSK)payload labeled with 622-Mb/s amplitude shift keying(ASK)control data.In our scheme,the receiver sensitivities of payload and label achieves-27.8dBm and-33.5dBm,respectively.After transmitted over 40km,60km and 80km single mode fiber(SMF)(with dispersion compensation)respectively,the payload can be recovered with no power penalty,while the label can be recovered with less than 2dB penalty.
基金supported by the National Natural Science Foundation of China(No.17JCYBJC16600/201386)。
文摘In this paper, an actively Q-switched wavelength injection locking random fiber laser(RFL) based on random phase-shifted fiber Bragg grating(RPS-FBG) is proposed, and the performance of the laser is verified by experiments. Within the reflection bandwidth range of RPS-FBG, spanning from 1 549.2 nm to 1 549.9 nm, different laser modes with stable central wavelength and peak power can be selectively chosen by varying the injected light wavelength. The power fluctuation within 1 h is less than 0.1 d Bm, and the central wavelength drift is less than 0.02 nm. When the pump power increases from 90 mW to 300 mW, the pulse width decreases from 3.2 μs to 1.5 μs, and the pulse repetition frequency is 20 kHz. The RFL can reach a stable locking state at the lowest pump power of 100 mW and the lowest injection power of 3 d Bm. When the wavelength is locked, the output pulse is a single pulse. On the contrary, the unlocked output pulse is multi-pulse. The laser has the characteristics of high wavelength tunability in the reflection range of RPS-FBG and it can be an ideal light source in the fields of laser imaging and pulse coding.
文摘In this paper the results from investigations of the nonlinear refractive index and nonlinear absorption coefficient of Bromophenol Blue using the Z-scan technique with a continuous wave laser beam at wavelengths 488 nm and 514 nm are presented. It was observed that the material exhibited reverse saturation absorption and self defocusing behavior. It was found that the increase in solution concentration resulted in linear increase of the nonlinear refractive index. A pump and probe technique was used to obtain the absorption spectrum of triplet state. Furthermore the nonlinear absorption effect was used to demonstrate all optical switching.
基金financially supported by the National Natural Science Foundation of China (Grant No.51802025)the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No.2020JQ-384)。
文摘Different bilayer structures of HfO_(x)/Ti(TiO_(x)) are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ray photoelectron spectroscopy,and the oxygen vacancies are analyzed. Highly improved on/off ratio(~104) and much uniform switching parameters are observed for bilayer structures compared to single layer HfO_(x) sample, which can be attributed to the modulation of oxygen vacancies at the interface and better control of the growth of filaments. Furthermore, the reliability of the prepared samples is investigated. The carrier conduction behaviors of HfO_(x)-based samples can be attributed to the trapping and de-trapping process of oxygen vacancies and a filamentary model is proposed. In addition, the rupture of filaments during the reset process for the bilayer structures occur at the weak points near the interface by the recovery of oxygen vacancies accompanied by the variation of barrier height. The re-formation of fixed filaments due to the residual filaments as lightning rods results in the better switching performance of the bilayer structure.
文摘This paper presents a unique voltage-raising topology for a single-phase seven-level inverter with triple output voltage gain using single input source and two switched capacitors.The output voltage has been boosted up to three times the value of input voltage by configuring the switched capacitors in series and parallel combinations which eliminates the use of additional step-up converters and transformers.The selective harmonic elimination(SHE)approach is used to remove the lower-order harmonics.The optimal switching angles for SHE is determined using the genetic algorithm.These switching angles are com-bined with a level-shifted pulse width modulation(PWM)technique for pulse generation,resulting in reduced total harmonic distortion(THD).A detailed com-parison has been made against other relevant seven-level inverter topologies in terms of the number of switches,drivers,diodes,capacitors,and boosting facil-ities to emphasize the benefits of the proposed model.The proposed topology is simulated using MATLAB/SIMULINK and an experimental prototype has been developed to validate the results.The Digital Signal Processing(DSP)TMS320F2812 board is used to generate the switching pulses for the proposed technique and the experimental results concur with the simulated model outputs.
文摘Direct torque control (DTC) of Switched reluctance motor is known straightforward control structure with similar execution to that of field situated control strategies. In any case, the part of ideal determination of the voltage space vector is one of the weakest focuses in a routine DTC drive because of adjustable switching frequency and high torque ripple. In this paper, ideal choice of voltage space vectors is accomplished utilizing ANFIS (Adaptive Neuro Fuzzy Inference System) with space vector Modulation. SVM-DTC gives consistent switching frequency and the proposed ANFIS controller’s structure manages the torque and stator flux error signals through the fuzzy deduction to get a yield that takes the type of space voltage vector. Simulation results accept the proposed evolutionary system with quick torque and flux reaction with minimized torque ripple and flux ripple.
基金supported by the National Research Foundation(NRF)funded by the Korean government(MSIT)(No.RS-2024-00416272).
文摘We present a novel approach to resolving the vergence–accommodation conflict(VAC)in extended reality(XR)optics by introducing a quarter-waveplate(QWP)geometric phase lens(GPL)capable of triple wavefront modulation—focusing,defocusing,and non-modulating at infinity.This polarization-driven behavior is interpreted using contour trajectories on the Poincarésphere and compared against conventional half-waveplate(HWP)GPLs.Leveraging this property,we propose a bi-stacked QWP GPL module that enables nine distinct varifocal states through polarization-controlled input selection and output filtering.In contrast,HWP-based modules under equivalent stacking conditions are limited to four focal states.The QWP GPL module supports a compact varifocal system spanning a continuous depth range from 24.27 cm to infinity,with a 0.3-diopter interval aligned with the human visual comfort zone.Importantly,the number of representable focal depths scales as 3^(n)for n stacked layers,offering a(1.5)^(n)-fold improvement over the 2^(n)scaling of HWP systems.This enables finer depth transitions using fewer lens units while retaining both compactness and optical modularity,establishing a depth-switchable imaging platform that enhances visual comfort and depth fidelity in next-generation XR display systems.
