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一种流水线A/D转换器Multi-bit级增益误差校正方法 被引量:1
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作者 王妍 于奇 +1 位作者 宁宁 杨谟华 《微电子学》 CAS CSCD 北大核心 2009年第3期302-305,310,共5页
提出了一种用于流水线A/D转换器multi-bit级增益误差校正的方法及其实现方案。该方法应用改进冗余位结构,通过在其子DAC输出端引入伪随机信号测量级间增益;利用此估计值在后台进行增益误差补偿。为了验证设计,对12位流水线ADC进行系统模... 提出了一种用于流水线A/D转换器multi-bit级增益误差校正的方法及其实现方案。该方法应用改进冗余位结构,通过在其子DAC输出端引入伪随机信号测量级间增益;利用此估计值在后台进行增益误差补偿。为了验证设计,对12位流水线ADC进行系统模拟,当首级有效精度为3位,且相对增益误差为±2%时,经校正后,INL均为0.16LSB,DNL分别为0.13LSB和0.14LSB,SFDR和SNDR分别提高35dB和16dB。分析表明,该方法能有效补偿multi-bit级增益偏大或偏小的误差,进而实现增益误差校正,且不会降低ADC转换范围和增加额外的比较器。 展开更多
关键词 A/D转换器 multi-bit 增益误差校正
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Design of small-area multi-bit antifuse-type 1 kbit OTP memory 被引量:1
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作者 李龙镇 LEE J H +4 位作者 KIM T H JIN K H PARK M H HA P B KIM Y H 《Journal of Central South University》 SCIE EI CAS 2009年第3期467-473,共7页
A multi-bit antifuse-type one-time programmable (OTP) memory is designed, which has a smaller area and a shorter programming time compared with the conventional single-bit antifuse-type OTP memory. While the convent... A multi-bit antifuse-type one-time programmable (OTP) memory is designed, which has a smaller area and a shorter programming time compared with the conventional single-bit antifuse-type OTP memory. While the conventional antifuse-type OTP memory can store a bit per cell, a proposed OTP memory can store two consecutive bits per cell through a data compression technique. The 1 kbit OTP memory designed with Magnachip 0.18 μm CMOS (complementary metal-oxide semiconductor) process is 34% smaller than the conventional single-bit antifuse-type OTP memory since the sizes of cell array and row decoder are reduced. And the programming time of the proposed OTP memory is nearly 50% smaller than that of the conventional counterpart since two consecutive bytes can be compressed and programmed into eight OTP cells at once. The layout area is 214 μm× 327 μ,, and the read current is simulated to be 30.4 μA. 展开更多
关键词 multi-bit OTP programming time ANTIFUSE MEMORY data compression
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Multi-Branch Fractional Multi-Bit Differential Detection of Continuous Phase Modulation with Decision Feedback
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作者 Jinhua Sun Xiaojun Wu 《Communications and Network》 2011年第1期23-30,共8页
Differential detection of continuous phase modulation suffers from significant intersymbol interference. To reduce bit error rate, multi-branch fractional multi-bit differential detection (MFMDD) with decision feed-ba... Differential detection of continuous phase modulation suffers from significant intersymbol interference. To reduce bit error rate, multi-branch fractional multi-bit differential detection (MFMDD) with decision feed-back is proposed. By introducing decision feedback in multi-bit differential detected signals, severe inter-symbol interference can be removed. Simulation results show that the proposed structure can greatly im-proves the performance compared with MFMDD without decision feedback, and the performance of 9 FMDD is very near to the performance of the coherent detection. 展开更多
关键词 Continuous Phase Modulation DIFFERENTIAL DETECTION FRACTIONAL multi-bit DIFFERENTIAL DETECTION Decision Feedback
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Reversible Data Hiding in Encrypted Images Based on Prediction and Adaptive Classification Scrambling 被引量:2
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作者 Lingfeng Qu Hongjie He +1 位作者 Shanjun Zhang Fan Chen 《Computers, Materials & Continua》 SCIE EI 2020年第12期2623-2638,共16页
Reversible data hiding in encrypted images(RDH-EI)technology is widely used in cloud storage for image privacy protection.In order to improve the embedding capacity of the RDH-EI algorithm and the security of the encr... Reversible data hiding in encrypted images(RDH-EI)technology is widely used in cloud storage for image privacy protection.In order to improve the embedding capacity of the RDH-EI algorithm and the security of the encrypted images,we proposed a reversible data hiding algorithm for encrypted images based on prediction and adaptive classification scrambling.First,the prediction error image is obtained by a novel prediction method before encryption.Then,the image pixel values are divided into two categories by the threshold range,which is selected adaptively according to the image content.Multiple high-significant bits of pixels within the threshold range are used for embedding data and pixel values outside the threshold range remain unchanged.The optimal threshold selected adaptively ensures the maximum embedding capacity of the algorithm.Moreover,the security of encrypted images can be improved by the combination of XOR encryption and classification scrambling encryption since the embedded data is independent of the pixel position.Experiment results demonstrate that the proposed method has higher embedding capacity compared with the current state-of-the-art methods for images with different texture complexity. 展开更多
关键词 Reversible data hiding classification scrambling prediction error multi-bits embedding
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A UNIVERSAL ALGORITHM FOR PARALLEL CRC COMPUTATION AND ITS IMPLEMENTATION 被引量:5
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作者 Xu Zhanqi Yi Kechu Liu Zengji 《Journal of Electronics(China)》 2006年第4期528-531,共4页
Derived from a proposed universal mathematical expression, this paper investigates a novel algo-rithm for parallel Cyclic Redundancy Check (CRC) computation, which is an iterative algorithm to update the check-bit seq... Derived from a proposed universal mathematical expression, this paper investigates a novel algo-rithm for parallel Cyclic Redundancy Check (CRC) computation, which is an iterative algorithm to update the check-bit sequence step by step and suits to various argument selections of CRC computation. The algorithm proposed is quite suitable for hardware implementation. The simulation implementation and performance analysis suggest that it could efficiently speed up the computation compared with the conventional ones. The algorithm is implemented in hardware at as high as 21Gbps, and its usefulness in high-speed CRC computa-tions is implied, such as Asynchronous Transfer Mode (ATM) networks and 10G Ethernet. 展开更多
关键词 Cyclic Redundancy Check (CRC) Parallel computation multi-bit divider
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Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM
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作者 Li-Hua Mo Bing Ye +6 位作者 Jie Liu Jie Luo You-Mei Sun Chang Cai Dong-Qing Li Pei-Xiong Zhao Ze He 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第3期394-401,共8页
Three-dimensional integrated circuits(3D ICs)have entered into the mainstream due to their high performance,high integration,and low power consumption.When used in atmospheric environments,3D ICs are irradiated inevit... Three-dimensional integrated circuits(3D ICs)have entered into the mainstream due to their high performance,high integration,and low power consumption.When used in atmospheric environments,3D ICs are irradiated inevitably by neutrons.In this paper,a 3D die-stacked SRAM device is constructed based on a real planar SRAM device.Then,the single event upsets(SEUs)caused by neutrons with different energies are studied by the Monte Carlo method.The SEU cross-sections for each die and for the whole three-layer die-stacked SRAM device is obtained for neutrons with energy ranging from 1 MeV to 1000 MeV.The results indicate that the variation trend of the SEU cross-section for every single die and for the entire die-stacked device is consistent,but the specific values are different.The SEU cross-section is shown to be dependent on the threshold of linear energy transfer(LETth)and thickness of the sensitive volume(Tsv).The secondary particle distribution and energy deposition are analyzed,and the internal mechanism that is responsible for this difference is illustrated.Besides,the ratio and patterns of multiple bit upset(MBU)caused by neutrons with different energies are also presented.This work is helpful for the aerospace IC designers to understand the SEU mechanism of 3D ICs caused by neutrons irradiation. 展开更多
关键词 NEUTRON three-dimension ICs single event upset multi-bit upset GEANT4
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A High-Resistance SOT Device Based Computing-in-Memory Macro With High Sensing Margin and Multi-Bit MAC Operations for AI Edge Inference
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作者 JUNZHAN LIU JINYAO MI +3 位作者 YANG LIU LIANG ZHANG HE ZHANG WANG KANG 《Integrated Circuits and Systems》 2025年第3期102-109,共8页
Computing-in-memory(CIM)offers a promising solution to the memory wall issue.Magnetoresistive random-access memory(MRAM)is a favored medium for CIM due to its non-volatility,high speed,low power,and technology maturit... Computing-in-memory(CIM)offers a promising solution to the memory wall issue.Magnetoresistive random-access memory(MRAM)is a favored medium for CIM due to its non-volatility,high speed,low power,and technology maturity.However,MRAM has continuously encountered the challenge of an insufficient high-resistance state(HRS)to low-resistance state(LRS)ratio,which affects the result accuracy of CIM.In this paper,based on SOT devices,we propose a 5T2M bit-cell structure that increases the high-to-low current ratio by modulating the sub-threshold operation region.Besides,by jointly using high-resistance devices(MΩlevel),the power consumption of the bit-cell array can be significantly reduced.Simultaneously,we have designed a compatible multi-bit implementation and macro architecture to support AI edge inference acceleration.This work was simulated under a 40-nm foundry process and a physically verified SOT-MTJ model.The results show that under the same high-to-low resistance ratio,a 52.6×high-to-low current ratio can be achieved,along with a 38.6%-98%bit-cell array power reduction. 展开更多
关键词 Computing-in-memory SOT-MRAM HRS/LRS ratio multi-bit artificial intelligence.
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Simulation Framework and Design Exploration of in-Situ Error Correction for Multi-Bit Computation-in-Memory Circuits
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作者 TING-AN LIN TOURANGBAM HARISHORE SINGH PO-TSANG HUANG 《Integrated Circuits and Systems》 2025年第4期243-254,共12页
As computational complexity continues to increase,effectively designing a computation-inmemory(CIM)architecture has become a crucial task.In such an architecture,errors may occur due to factors such as voltage drift.T... As computational complexity continues to increase,effectively designing a computation-inmemory(CIM)architecture has become a crucial task.In such an architecture,errors may occur due to factors such as voltage drift.This work focuses on designing a simulation framework for In-Situ error correction of multi-bit memory-in-computing circuits.The research concentrates on In-Situ error correction techniques,allowing the system to instantly detect and correct errors during memory or computational operations at the same location where data is being processed and stored.The primary goal of this work is to explore how to minimize the impact of these errors on model accuracy.In constructing the simulation environment,multi-bit weights are decomposed,and 2D convolutions are decomposed into matrix multiplications,then mapped onto the CIM architecture.Based on this framework,this work further analyzes hardware errors in CIM,including the causes of errors,statistical characteristics,and the impact of extreme error values on accuracy.Furthermore,we introduce and deeply analyze clamping as an error correction technique.Through a series of simulations,we came to the following clear conclusion:To maximize hardware efficiency and accuracy correction effects,special attention must be paid to high-bit weights and the protection of sensitive convolutional layers.In addition,reasonable setting of clamping threshold and appropriate array-based output grouping strategy are also indispensable.These strategies provide clear optimization directions for neural networks in specific application scenarios.After considering the above strategies and optimizing,the model accuracy can reach a maximum of 73.8%,which is close to the baseline of 75.8%.Considering that the protection circuit area is reduced by 50%,this result shows excellent benefits. 展开更多
关键词 In-situ error correction multi-bit computation-in-memory
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Multi-bit upset aware hybrid error-correction for cache in embedded processors
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作者 董佳琪 邱柯妮 +3 位作者 张伟功 王晶 王珍珍 丁丽华 《Journal of Semiconductors》 EI CAS CSCD 2015年第11期48-52,共5页
For the processor working in the radiation environment in space, it tends to suffer from the single event effect on circuits and system failures, due to cosmic rays and high energy particle radiation. Therefore, the r... For the processor working in the radiation environment in space, it tends to suffer from the single event effect on circuits and system failures, due to cosmic rays and high energy particle radiation. Therefore, the reliability of the processor has become an increasingly serious issue. The BCH-based error correction code can correct multibit errors, but it introduces large latency overhead. This paper proposes a hybrid error correction approach that combines BCH and EDAC to correct both multi-bit and single-bit errors for caches with low cost. The proposed technique can correct up to four-bit error, and correct single-bit error in one cycle. Evaluation results show that, the proposed hybrid error-correction scheme can improve the performance of cache accesses up to 20% compared to the pure BCH scheme. 展开更多
关键词 BCH single event upset CACHE multi-bit error correction embedded processor
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Novel multi-bit non-uniform channel charge trapping memory device with virtual-source NAND flash array
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作者 古海明 潘立阳 +3 位作者 祝鹏 伍冬 张志刚 许军 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第10期57-61,共5页
In order to overcome the bit-to-bit interference of the traditional multi-level NAND type device, this paper firstly proposes a novel multi-bit non-uniform channel charge trapping memory (NUC-CTM) device with virtua... In order to overcome the bit-to-bit interference of the traditional multi-level NAND type device, this paper firstly proposes a novel multi-bit non-uniform channel charge trapping memory (NUC-CTM) device with virtual-source NAND-type array architecture, which can effectively restrain the second-bit effect (SBE) and provide 3-bit per cell capability. Owing to the n- buffer region, the SBE induced threshold voltage window shift can be reduced to less than 400 mV and the minimum threshold voltage window between neighboring levels is larger than 750 mV for reliable 3-bit operation. A silicon-rich SiON is also investigated as a trapping layer to improve the retention reliability of the NUC-CTM. 展开更多
关键词 multi-bit storage non-uniform channel charge trapping memory NAND array SiON layer
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An all-optical comparison scheme between two multi-bit data with optical nonlinear material
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作者 Kuladeep Roy Chowdhury Abhijit Sinha Sourangshu Mukhopadhyay 《Chinese Optics Letters》 SCIE EI CAS CSCD 2008年第9期693-696,共4页
Over the last few decades, several all-optical circuits have been proposed to meet the need of high-speed data processing. In some information processing architectures, the role of various analog and digital data comp... Over the last few decades, several all-optical circuits have been proposed to meet the need of high-speed data processing. In some information processing architectures, the role of various analog and digital data comparisons is very important. In this letter, we proposed a multi-bit data comparison scheme. The scheme is based on the switching property of optical nonlinear material. Ultrafast operational speed larger than gigahertz can be expected from this all-optical scheme. 展开更多
关键词 An all-optical comparison scheme between two multi-bit data with optical nonlinear material DATA than BIBO
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A 12 bit 100 MS/s pipelined analog to digital converter without calibration 被引量:1
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作者 蔡小波 李福乐 +1 位作者 张春 王志华 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第11期100-104,共5页
A 1.8 V 12 bit 100 MS/s pipelined analog to digital converter(ADC) in a 0.18μm complementary metal-oxide semiconductor process is presented.The first stage adopts a 3.5 bit structure to relax the capacitor matching... A 1.8 V 12 bit 100 MS/s pipelined analog to digital converter(ADC) in a 0.18μm complementary metal-oxide semiconductor process is presented.The first stage adopts a 3.5 bit structure to relax the capacitor matching requirements.A bootstrapped switch and a scaling down technique are used to improve the ADC's linearity and save power dissipation,respectively.With a 15.5 MHz input signal,the ADC achieves 79.8 dB spurious-free dynamic range and 10.5 bit effective number of bits at 100 MS/s.The power consumption is 112 mW at a 1.8 V supply,including output drivers.The chip area is 3.51 mm2,including pads. 展开更多
关键词 pipelined ADC multi-bit OPAMP low power
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A 1.1 mW 87 dB dynamic range △∑ modulator for audio applications
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作者 刘力源 陈良栋 +2 位作者 李冬梅 王志华 魏少军 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第5期78-84,共7页
This paper presents a 1.1 mW 87 dB dynamic range third orderΔΣmodulator implemented in 0.18μm CMOS technology for audio applications.By adopting a feed-forward multi-bit topology,the signal swing at the output of t... This paper presents a 1.1 mW 87 dB dynamic range third orderΔΣmodulator implemented in 0.18μm CMOS technology for audio applications.By adopting a feed-forward multi-bit topology,the signal swing at the output of the first integrator can be suppressed.A simple current mirror single stage OTA with 34 dB DC gain working under 1 V power supply is used in the first integrator.The prototype modulator achieves 87 dB DR and 83.8 dB peak SNDR across the bandwidth from 100 Hz to 24 kHz with 3 kHz input signal. 展开更多
关键词 ΔΣ modulator FEED-FORWARD low power low voltage multi-bit
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A 16-bit cascaded sigma-delta pipeline A/D converter
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作者 李梁 李儒章 +2 位作者 俞宙 张加斌 张俊安 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第5期103-108,共6页
A low-noise cascaded multi-bit sigma-delta pipeline analog-to-digital converter (ADC) with a low over-sampling rate is presented. The architecture is composed of a 2-order 5-bit sigma-delta modulator and a cascaded ... A low-noise cascaded multi-bit sigma-delta pipeline analog-to-digital converter (ADC) with a low over-sampling rate is presented. The architecture is composed of a 2-order 5-bit sigma-delta modulator and a cascaded 4-stage 12-bit pipelined ADC, and operates at a low 8X oversampling rate. The static and dynamic performances of the whole ADC can be improved by using dynamic element matching technique. The ADC operates at a 4 MHz clock rate and dissipates 300 mW at a 5 V/3 V analog/digital power supply. It is developed in a 0.35μm CMOS process and achieves an SNR of 82 dB. 展开更多
关键词 multi-bit sigma-delta ADC OVERSAMPLING PIPELINE digital filter switched capacitor
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An optimized analog to digital converter for WLAN analog front end
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作者 叶茂 周玉梅 +1 位作者 吴斌 蒋见花 《Journal of Semiconductors》 EI CAS CSCD 2012年第4期124-128,共5页
A 10 bit 80 MSPS analog to digital converter optimized for WLAN analog front end is presented. In contrast to conventional 1.5 bit pipeline architecture, four optimized multiit multiply digital to analog converter sta... A 10 bit 80 MSPS analog to digital converter optimized for WLAN analog front end is presented. In contrast to conventional 1.5 bit pipeline architecture, four optimized multiit multiply digital to analog converter stages are implemented. An on-chip low-noise reference buffer is proposed for SoC integration purposes, and a wide-bandwidth wide swing sample and hold amplifier is also presented for achieving a good dynamic range. The converter was fabricated in 0.18 #m 1P6M CMOS technology, and the core area occupies approximately 0.85 mm2. Measured results show that with an 11 MHz input signal, it provides a 9.4 bit effective number of bits and a 72 dBc spurious frequency dynamic range when sampled at 80 MHz. 展开更多
关键词 WLAN analog to digital converter multi-bit MDAC reference buffer SHA
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An 18-bit high performance audio ∑-△D/A converter
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作者 张昊 黄小伟 +4 位作者 韩雁 张泽松 韩晓霞 王昊 梁国 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第7期79-84,共6页
A multi-bit quantized high performance sigma-delta(Σ-Δ) audio DAC is presented.Compared to its singlebit counterpart,the multi-bit quantization offers many advantages,such as simplerΣ-Δmodulator circuit,lower cl... A multi-bit quantized high performance sigma-delta(Σ-Δ) audio DAC is presented.Compared to its singlebit counterpart,the multi-bit quantization offers many advantages,such as simplerΣ-Δmodulator circuit,lower clock frequency and smaller spurious tones.With the data weighted average(DWA) mismatch shaping algorithm,element mismatch errors induced by multi-bit quantization can be pushed out of the signal band,hence the noise floor inside the signal band is greatly lowered.To cope with the crosstalk between digital and analog circuits,every analog component is surrounded by a guard ring,which is an innovative attempt.The 18-bit DAC with the above techniques,which is implemented in a 0.18μm mixed-signal CMOS process,occupies a core area of 1.86 mm^2.The measured dynamic range(DR) and peak SNDR are 96 dB and 88 dB,respectively. 展开更多
关键词 digital-to-analog converter Σ-Δmodulator multi-bit quantization SWITCHED-CAPACITOR
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Local pixel patterns
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作者 Fangjun Huang Xiaochao Qu +1 位作者 Hyoung Joong Kim Jiwu Huang 《Computational Visual Media》 2015年第2期157-170,共14页
In this paper, a new class of image texture operators is proposed. We firstly determine that the number of gray levels in each B × B subblock is a fundamental property of the local image texture. Thus, an occurre... In this paper, a new class of image texture operators is proposed. We firstly determine that the number of gray levels in each B × B subblock is a fundamental property of the local image texture. Thus, an occurrence histogram for each B × B sub-block can be utilized to describe the texture of the image. Moreover, using a new multi-bit plane strategy, i.e., representing the image texture with the occurrence histogram of the first one or more significant bit-planes of the input image, more powerful operators for describing the image texture can be obtained. The proposed approach is invariant to gray scale variations since the operators are, by definition,invariant under any monotonic transformation of the gray scale, and robust to rotation. They can also be used as supplementary operators to local binary patterns(LBP) to improve their capability to resist illuminance variation, surface transformations, etc. 展开更多
关键词 TEXTURE multi-bit gray scale ROTATION
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