The spin-transfer-torque(STT)magnetic tunneling junction(MTJ)device is one of the prominent candidates for spintronic logic circuit and neuromorphic computing.Therefore,building a simulation framework of hybrid STT-MT...The spin-transfer-torque(STT)magnetic tunneling junction(MTJ)device is one of the prominent candidates for spintronic logic circuit and neuromorphic computing.Therefore,building a simulation framework of hybrid STT-MTJ/CMOS(complementary metal-oxide-semiconductor)circuits is of great value for designing a new kind of computing paradigm based on the spintronic devices.In this work,we develop a simulation framework of hybrid STT-MTJ/CMOS circuits based on MATLAB/Simulink,which is mainly composed of a physics-based STT-MTJ model,a controlled resistor,and a current sensor.In the proposed framework,the STT-MTJ model,based on the Landau-Lifshitz-Gilbert-Slonczewsk(LLGS)equation,is implemented using the MATLAB script.The proposed simulation framework is modularized design,with the advantage of simple-to-use and easy-to-expand.To prove the effectiveness of the proposed framework,the STT-MTJ model is benchmarked with experimental results.Furthermore,the pre-charge sense amplifier(PCSA)circuit consisting of two STT-MTJ devices is validated and the electrical coupling of two spin-torque oscillators is simulated.The results demonstrate the effectiveness of our simulation framework.展开更多
With the development of magnetic tunnel junction （MTJ） structure, it has been used in the field of electric circuit with emerging merits, such as high-density, easy integrated, etc. A novel register, in which MTJ de...With the development of magnetic tunnel junction （MTJ） structure, it has been used in the field of electric circuit with emerging merits, such as high-density, easy integrated, etc. A novel register, in which MTJ device is centered, is proposed in this paper. Based on the demand of MTJ＇s reading and writing process, some additional devices have been integrated with the MTJ device to compose the actual structure. It has been simulated using Hspice and the simulated result shows that it can be operated as a register in the circuit. Moreover, the layout of the register based on 0.5 μm complementary metal-oxide semiconductor （CMOS） process has been finished.展开更多
Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type ...Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type MRAM approaches mass production, there is an increasing demand for non-volatile RAM(nv RAM) technologies that offer fast write speed and high endurance. In this work, we demonstrate highly reliable 4 Mb nv RAM type MRAM suitable for industry and auto grade-1 applications. This nv RAM features retention over 10 years at 125 ℃, endurance of 1 × 10^(12)cycles with 20 ns write speed, making it ideal for applications requiring both high speed and broad temperature ranges. By employing innovative MTJ materials, process engineering, and a co-optimization of process and design, reliable read and write performance across the full temperature range between -40 to 125 ℃, and array yield that meets sub-1 ppm error rate was significantly improved from 0 to above 95%, a concrete step toward applications.展开更多
为突破冯·诺伊曼架构的能效与数据吞吐瓶颈,基于脉冲神经网络的存算一体化架构对底层非易失性存储器的性能提出严苛要求。在众多新型存储器中,自旋转移矩磁性随机存储器(spin-transfer torque magnetic random access memory,STT-M...为突破冯·诺伊曼架构的能效与数据吞吐瓶颈,基于脉冲神经网络的存算一体化架构对底层非易失性存储器的性能提出严苛要求。在众多新型存储器中,自旋转移矩磁性随机存储器(spin-transfer torque magnetic random access memory,STT-MRAM)凭借纳秒级读写速度、极高耐久性、出色的数据保持能力、低功耗以及与互补金属-氧化物-半导体(complementary metal-oxide-semiconductor,CMOS)工艺的后端兼容性,成为极具潜力的候选器件。STTMRAM的核心元件为磁隧道结(magnetic tunnel junction,MTJ),其通过电流直接驱动磁化翻转的物理机制是实现快速读写和低功耗操作的关键。系统综述STT-MRAM快速翻转动力学机理与性能优化策略的最新研究进展,重点分析MTJ核心结构参数(如自由层材料、垂直磁各.向异性能等)对其翻转性能和可靠性的影响规律,并对先进电学表征技术进行详细介绍,为面向存算一体应用的高性能STT-MRAM设计提供理论依据与技术路径。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.62004223)the Science and Technology Innovation Program of Hunan Province,China(Grant No.2022RC1094)+1 种基金the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics,China(Grant No.KF202012)the Hunan Provincial Science Innovation Project for Postgraduate,China(Grant No.CX20210086).
文摘The spin-transfer-torque(STT)magnetic tunneling junction(MTJ)device is one of the prominent candidates for spintronic logic circuit and neuromorphic computing.Therefore,building a simulation framework of hybrid STT-MTJ/CMOS(complementary metal-oxide-semiconductor)circuits is of great value for designing a new kind of computing paradigm based on the spintronic devices.In this work,we develop a simulation framework of hybrid STT-MTJ/CMOS circuits based on MATLAB/Simulink,which is mainly composed of a physics-based STT-MTJ model,a controlled resistor,and a current sensor.In the proposed framework,the STT-MTJ model,based on the Landau-Lifshitz-Gilbert-Slonczewsk(LLGS)equation,is implemented using the MATLAB script.The proposed simulation framework is modularized design,with the advantage of simple-to-use and easy-to-expand.To prove the effectiveness of the proposed framework,the STT-MTJ model is benchmarked with experimental results.Furthermore,the pre-charge sense amplifier(PCSA)circuit consisting of two STT-MTJ devices is validated and the electrical coupling of two spin-torque oscillators is simulated.The results demonstrate the effectiveness of our simulation framework.
基金This work was supported in part by the open research fund of Key Laboratory of MEMS of Ministry of Education, Southeast University and the National Nature Science Foundation under Grant No.60876078, Funding Project for Academic Human Resources Development in Institutions of Higher Learning Under the Jurisdiction of Beijing Municipality （PHR（IHLB）） and Beijing Novel Research Star（2005B01）.
文摘With the development of magnetic tunnel junction （MTJ） structure, it has been used in the field of electric circuit with emerging merits, such as high-density, easy integrated, etc. A novel register, in which MTJ device is centered, is proposed in this paper. Based on the demand of MTJ＇s reading and writing process, some additional devices have been integrated with the MTJ device to compose the actual structure. It has been simulated using Hspice and the simulated result shows that it can be operated as a register in the circuit. Moreover, the layout of the register based on 0.5 μm complementary metal-oxide semiconductor （CMOS） process has been finished.
基金supported by National Science and Technology Major Project (2020AAA0109003)the support from Hangzhou Innovation Team Program (TD2022018)。
文摘Magnetic tunnel junction(MTJ) based spin transfer torque magnetic random access memory(STT-MRAM) has been gaining tremendous momentum in high performance microcontroller(MCU) applications. As e Flash-replacement type MRAM approaches mass production, there is an increasing demand for non-volatile RAM(nv RAM) technologies that offer fast write speed and high endurance. In this work, we demonstrate highly reliable 4 Mb nv RAM type MRAM suitable for industry and auto grade-1 applications. This nv RAM features retention over 10 years at 125 ℃, endurance of 1 × 10^(12)cycles with 20 ns write speed, making it ideal for applications requiring both high speed and broad temperature ranges. By employing innovative MTJ materials, process engineering, and a co-optimization of process and design, reliable read and write performance across the full temperature range between -40 to 125 ℃, and array yield that meets sub-1 ppm error rate was significantly improved from 0 to above 95%, a concrete step toward applications.
文摘为突破冯·诺伊曼架构的能效与数据吞吐瓶颈,基于脉冲神经网络的存算一体化架构对底层非易失性存储器的性能提出严苛要求。在众多新型存储器中,自旋转移矩磁性随机存储器(spin-transfer torque magnetic random access memory,STT-MRAM)凭借纳秒级读写速度、极高耐久性、出色的数据保持能力、低功耗以及与互补金属-氧化物-半导体(complementary metal-oxide-semiconductor,CMOS)工艺的后端兼容性,成为极具潜力的候选器件。STTMRAM的核心元件为磁隧道结(magnetic tunnel junction,MTJ),其通过电流直接驱动磁化翻转的物理机制是实现快速读写和低功耗操作的关键。系统综述STT-MRAM快速翻转动力学机理与性能优化策略的最新研究进展,重点分析MTJ核心结构参数(如自由层材料、垂直磁各.向异性能等)对其翻转性能和可靠性的影响规律,并对先进电学表征技术进行详细介绍,为面向存算一体应用的高性能STT-MRAM设计提供理论依据与技术路径。
