The monolithic integrated micro sensor is an important direction in the fields of integrated circuits and micro sensors. In this paper,a monolithic thermal vacuum sensor based on a micro-hotplate （MHP） and operating...The monolithic integrated micro sensor is an important direction in the fields of integrated circuits and micro sensors. In this paper,a monolithic thermal vacuum sensor based on a micro-hotplate （MHP） and operating under constant bias voltage conditions was designed. A new monolithic integrating mode was proposed,in which the dielectric and passiva- tion layers in standard CMOS processes were used as sensor structure layers,gate polysilicon as the sacrificial layer,and the second polysilicon layer as the sensor heating resistor. Then, the fabricating processes were designed and the monolithic thermal vacuum sensor was fabricated with a 0. 6μm mixed signal CMOS process followed by sacrificial layer etching technology. The measurement results show that the fabricated monolithic vacuum sensor can measure the pressure range of 2- 10^5 Pa and the output voltage is adjustable.展开更多
A 330-500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194μW at 348 GHz. The saturation characteri...A 330-500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194μW at 348 GHz. The saturation characteristic test shows that the output i dB compression point is about -8.5 dBm at 334 GHz and the maximum efficiency is obtained at the point, which is slightly below the 1 dB compression point. Compared with the conventional hybrid integrated circuit, a major advantage of the monolithic integrated circuit is the significant improvement of reliability and consistency. In this work, a terahertz monolithic frequency multiplier at this band is designed and fabricated.展开更多
Design and characterization of a G-band（140–220 GHz） terahertz monolithic integrated circuit（TMIC） amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heteroju...Design and characterization of a G-band（140–220 GHz） terahertz monolithic integrated circuit（TMIC） amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heterojunction bipolar transistor（DHBT）. An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the In P substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are-2.688 dBm at 210 GHz and-2.88 dBm at 220 GHz,respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.展开更多
The optimization of high power terahertz monolithic integrated circuit (TMIC) is systemically studied based on the physical model of the Schottky barrier varactor (SBV) with interface defects and tunneling effect. An ...The optimization of high power terahertz monolithic integrated circuit (TMIC) is systemically studied based on the physical model of the Schottky barrier varactor (SBV) with interface defects and tunneling effect. An ultra-thin dielectric layer is added to describe the extra tunneling effect and the damping of thermionic emission current induced by the interface defects. Power consumption of the dielectric layer results in the decrease of capacitance modulation ration (Cmax/Cmin), and thus leads to poor nonlinear C–V characteristics. The proposed Schottky metal-brim (SMB) terminal structure could improve the capacitance modulation ration by reducing the influence of the interface charge and eliminating the fringing capacitance effect. Finally, a 215 GHz tripler TMIC is fabricated based on the SMB terminal structure. The output power is above 5 mW at 210–218 GHz and the maximum could exceed 10 mW at 216 GHz, which could be widely used in terahertz imaging, radiometers, and so on. This paper also provides theoretical support for the SMB structure to optimize the TMIC performance.展开更多
A medium wave(MW)640×512(25μm)Mercury Cadmium Telluride(HgCdTe)polarimetric focal plane array(FPA)was demonstrated.The micro-polarizer array(MPA)has been carefully designed in terms of line grating structure opt...A medium wave(MW)640×512(25μm)Mercury Cadmium Telluride(HgCdTe)polarimetric focal plane array(FPA)was demonstrated.The micro-polarizer array(MPA)has been carefully designed in terms of line grating structure optimization and crosstalk suppression.A monolithic fabrication process with low damage was explored,which was verified to be compatible well with HgCdTe devices.After monolithic integration of MPA,NETD<9.5 mK was still maintained.Furthermore,to figure out the underlying mechanism that dominat⁃ed the extinction ratio(ER),specialized MPA layouts were designed,and the crosstalk was experimentally vali⁃dated as the major source that impacted ER.By expanding opaque regions at pixel edges to 4μm,crosstalk rates from adjacent pixels could be effectively reduced to approximately 2%,and promising ERs ranging from 17.32 to 27.41 were implemented.展开更多
Photonic neural networks(PNNs)of sufficiently large physical dimensions and high operation accuracies are envisaged as ideal candidates for breaking the major bottlenecks in the current artificial intelligence archite...Photonic neural networks(PNNs)of sufficiently large physical dimensions and high operation accuracies are envisaged as ideal candidates for breaking the major bottlenecks in the current artificial intelligence architectures in terms of latency,energy efficiency,and computational power.To achieve this vision,it is of vital importance to scale up the PNNs while simultaneously reducing the high demand on the dimensions required by them.The underlying cause of this strategy is the enormous gap between the scales of photonic and electronic integrated circuits.Here,we demonstrate monolithically integrated optical convolutional processors on thin film lithium niobate(TFLN)that harness inherent parallelism in photonics to enable large-scale programmable convolution kernels and,in turn,greatly reduce the dimensions required by subsequent fully connected layers.Experimental validation achieves high classification accuracies of 96%(86%)on the MNIST(Fashion-MNIST)dataset and 84.6%on the AG News dataset while dramatically reducing the required subsequent fully connected layer dimensions to 196×10(from 784×10)and 175×4(from 800×4),respectively.Furthermore,our devices can be driven by commercial field-programmable gate array systems;a unique advantage in addition to their scalable channel number and kernel size.Our architecture provides a solution to build practical machine learning photonic devices.展开更多
Flexible electronics face critical challenges in achieving monolithic three-dimensional(3D)integration,including material compatibility,structural stability,and scalable fabrication methods.Inspired by the tactile sen...Flexible electronics face critical challenges in achieving monolithic three-dimensional(3D)integration,including material compatibility,structural stability,and scalable fabrication methods.Inspired by the tactile sensing mechanism of the human skin,we have developed a flexible monolithic 3D-integrated tactile sensing system based on a holey MXene paste,where each vertical one-body unit simultaneously functions as a microsupercapacitor and pressure sensor.The in-plane mesopores of MXene significantly improve ion accessibility,mitigate the self-stacking of nanosheets,and allow the holey MXene to multifunctionally act as a sensing material,an active electrode,and a conductive interconnect,thus drastically reducing the interface mismatch and enhancing the mechanical robustness.Furthermore,we fabricate a large-scale device using a blade-coating and stamping method,which demonstrates excellent mechanical flexibility,low-power consumption,rapid response,and stable long-term operation.As a proof-of-concept application,we integrate our sensing array into a smart access control system,leveraging deep learning to accurately identify users based on their unique pressing behaviors.This study provides a promising approach for designing highly integrated,intelligent,and flexible electronic systems for advanced human-computer interactions and personalized electronics.展开更多
The rapidly growing computational demands of artificial intelligence(AI)and complex optimization tasks are increasingly straining conventional electronic architectures,driving the search for novel,energy-efficient pro...The rapidly growing computational demands of artificial intelligence(AI)and complex optimization tasks are increasingly straining conventional electronic architectures,driving the search for novel,energy-efficient processing paradigms.Photonic computing,which harnesses the unique properties of light to perform computation,has emerged as a compelling alternative.This perspective highlights a key advancement:a versatile nonlinear optoelectronic engine based on integrated photodetectors and micro-ring modulators(PD+MRM).This engine enables crucial functionalities like nonlinear activation and signal relay,forming a core building block for monolithic photonic processors.Its application in integrating optical Ising machines for optimization and optical recurrent neural networks(RNNs)for AI has been examined recently.The PD+MRM unit’s inherent compactness,efficiency,and onchip reconfigurable nonlinearity address historical photonic computing challenges,signaling a shift towards more versatile and scalable monolithic photonic processors.展开更多
A new type strongly gain coupled (GC) DFB laser and a new type self alignment spot size converter (SA SSC) are proposed and successfully fabricated.The strongly GC DFB laser is monolithically integrated with the ...A new type strongly gain coupled (GC) DFB laser and a new type self alignment spot size converter (SA SSC) are proposed and successfully fabricated.The strongly GC DFB laser is monolithically integrated with the SA SSC with three step epitaxies.A high single mode yield and large side mode suppression ratio is obtained from the strongly GC DFB laser.A near circle far field pattern is obtained by using the SA SSC.展开更多
A behavioral model of the photodiode is presented.The model describes the relationship between photocurrent and incident optical power,and it also illustrates the impact of the reverse bias to the variation of the jun...A behavioral model of the photodiode is presented.The model describes the relationship between photocurrent and incident optical power,and it also illustrates the impact of the reverse bias to the variation of the junction capacitance.According to this model,the photodiode and a CMOS receiver circuit are simulated and designed simultaneously under a universal circuit simulation environment.展开更多
A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packagi...A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF （mixed signal, radio frequency） CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.展开更多
A solar-blind multi-quantum well(MQW)structure wafer based on AlGaN materials is epitaxial growth by metal-organic chemical vapor deposition(MOCVD).The monolithically integrated photonic chips including light-emitting...A solar-blind multi-quantum well(MQW)structure wafer based on AlGaN materials is epitaxial growth by metal-organic chemical vapor deposition(MOCVD).The monolithically integrated photonic chips including light-emitting diodes(LEDs),waveguides,and photodetec-tors(PDs)are presented.The results of the finite-difference time-domain(FDTD)simulation confirm the strong light constraint of the wave-guide designed with the triangular structure in the optical coupling region.Furthermore,in virtue of predominant ultraviolet transverse mag-netic(TM)modes,the solar blind optical signal is more conducive to lateral transmission along the waveguide inside the integrated chip.The integrated PDs demonstrate sufficient photosensitivity to the optical signal from the integrated LEDs.When the LEDs are operated at 100 mA current,the photo-to-dark current ratio(PDCR)of the integrated PD is about seven orders of magnitude.The responsivity,specific detectivity,and external quantum efficiency of the integrated self-driven PD are 74.89 A/W,4.22×1013 Jones,and 3.38×104%,respectively.The stable on-chip optical information transmission capability of the monolithically integrated photonic chips confirms the great potential for application in large-scale on-chip optical communication in the future.展开更多
A broadband amplifier with transadmittance and transimpedance stages is designed and two types of improved AGC amplifiers are developed on the base of theory study. Making use of the basic amplifier cells, a main ampl...A broadband amplifier with transadmittance and transimpedance stages is designed and two types of improved AGC amplifiers are developed on the base of theory study. Making use of the basic amplifier cells, a main amplifier IC for optical-fiber receivers is deliberated. By computer simulating the performances of the designed main amplifier meet the necessity of high gain and wide dynamic range . They are maximum voltage gain of 42 dB, the bandwidth of 730 MHz,the input signal( V p-p )range from 5 mV to 1 V,the output amplitude about 1 V, the dynamic range of 46 dB. The designed circuit containing no inductance and large capacitance will be convenient for realizing integration. A monolithic integrated design of 622 Mb/s main amplifier is completed.展开更多
An integrated 3.3V/1.2V SC DC-DC converter operating under 10MHz with a fixed duty radio of 0.5 is presented.To improve the output current of the converter,CMOS technology is adopted to fabricate the switching devices...An integrated 3.3V/1.2V SC DC-DC converter operating under 10MHz with a fixed duty radio of 0.5 is presented.To improve the output current of the converter,CMOS technology is adopted to fabricate the switching devices,and mutually compensatory circuitry technology is also employed to double the output current furthermore.The simulation results using Hspice simulation software,show that the output currents of a single unit circuit and two unit circuits connected in a mutually compensatory manner of the improved converter is about 12.5mA and 26mA,respectively.The power conversion efficiency of the mutually compensatory circuit can amount to 73%,while its output voltage ripple is less than 1.5%.The converter is fabricated in standard Rohm 0.35μm CMOS technology in Tokyo University of Japan.The test result indicates that the output current of 9.8mA can be obtained from a single unit circuit of the improved converter.展开更多
Monolithic electro absorption modulated distributed feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0 5V to 3 0V),and ab...Monolithic electro absorption modulated distributed feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0 5V to 3 0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1 5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices.展开更多
Two kinds of monolithically fabricated circuits are demonstrated in GaAs-based material systems using resonant tunneling diodes（RTD） and metal-semiconductor-metal photo detectors（MSM PD）. The electronic characteri...Two kinds of monolithically fabricated circuits are demonstrated in GaAs-based material systems using resonant tunneling diodes（RTD） and metal-semiconductor-metal photo detectors（MSM PD）. The electronic characteristics of these fabricated RTD devices,MSM devices,and integrated circuits are tested at room temperature. The results show that the current peak-to-valley ratio is 4,and the photocurrent at 5V is enhanced by a factor of nearly 9,from 2 to about 18μA by use of recessed electrodes. The working theory and logical functions of the circuits are validated.展开更多
Active electronics are usually composed of semiconductor and metal electrodes which are connected by multiple vacuum deposition steps and photolithography patterning.However,the presence of interface of dissimilar mat...Active electronics are usually composed of semiconductor and metal electrodes which are connected by multiple vacuum deposition steps and photolithography patterning.However,the presence of interface of dissimilar material between semiconductor and metal electrode makes various problems in electrical contacts and mechanical failure.The ideal electronics should not have defective interfaces of dissimilar materials.In this study,we developed a novel method to fabricate active electronic components in a monolithic seamless fashion where both metal and semiconductor can be prepared from the same monolith material without creating a semiconductor-metal interface by reversible selective laser-induced redox(rSLIR)method.Furthermore,rSLIR can control the oxidation state of transition metal(Cu)to yield semiconductors with two different bandgap states(Cu_(2)O and CuO with bandgaps of 2.1 and 1.2 eV,respectively),which may allow multifunctional sensors with multiple bandgaps from the same materials.This novel method enables the seamless integration of single-phase Cu,Cu_(2)O,and CuO,simultaneously while allowing reversible,selec-tive conversion between oxidation states by simply shining laser light.Moreover,we fabricated a flexible monolithic metal-semiconduc-tor-metal multispectral photodetector that can detect multiple wavelengths.The unique monolithic characteristics of rSLIR process can provide next-generation electronics fabrication method overcoming the limitation of conventional photolithography methods.展开更多
Monolithic integration of four 1.55-μm-range InGaAsP/InP distributed feedback （DFB） lasers using varied ridge width with a 4 x 1-multimode-interference （MMI） optical combiner and a semiconductor optical amplifier...Monolithic integration of four 1.55-μm-range InGaAsP/InP distributed feedback （DFB） lasers using varied ridge width with a 4 x 1-multimode-interference （MMI） optical combiner and a semiconductor optical amplifier （SOA） is demon- strated. The average output power and the threshold current are 1.8 mW and 35 mA, respectively, when the injection current of the SOA is 100 mA, with a side mode suppression ratio （SMSR） exceeding 40 dB. The four channels have a 1-nm average channel spacing and can operate separately or simultaneously.展开更多
The epitaxial material, device structure, and corresponding equivalent large signal circuit model of GaAs planar Schottky varactor diode are successfully developed to design and fabricate a monolithic phase shifter, w...The epitaxial material, device structure, and corresponding equivalent large signal circuit model of GaAs planar Schottky varactor diode are successfully developed to design and fabricate a monolithic phase shifter, which is based on right-handed nonlinear transmission lines and consists of a coplanar waveguide transmission line and periodically distributed GaAs planar Schottky varactor diode. The distributed-Schottky transmission-line-type phase shifter at a bias voltage greater than 1.5 V presents a continuous 0°–360° differential phase shift over a frequency range from 0 to 33 GHz. It is demonstrated that the minimum insertion loss is about 0.5 dB and that the return loss is less than-10 dB over the frequency band of 0–33 GHz at a reverse bias voltage less than 4.5 V. These excellent characteristics, such as broad differential phase shift, low insertion loss, and return loss, indicate that the proposed phase shifter can entirely be integrated into a phased array radar circuit.展开更多
Monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is an important development direction of ultra-high speed integrated circuit. A kind of top-RTD and bottom-HEMT...Monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is an important development direction of ultra-high speed integrated circuit. A kind of top-RTD and bottom-HEMT material structure is epitaxied on InP substrate through molecular beam epitaxy. Based on wet chemical etching, metal lift-off and air bridge interconnection technology, RTD and HEMT are fabricated simultaneously. The peak-to-valley current ratio of RTD is 7.7 and the peak voltage is 0.33 V at room temperature. The pinch-off voltage is -0.5 V and the current gain cut-frequency is 30 GHz for a 1.0 μm gate length depletion mode HEMT. The two devices are conformable in current magnitude, which is suitable for the construction of various RTD/HEMT monolithic integration logic circuits.展开更多
文摘The monolithic integrated micro sensor is an important direction in the fields of integrated circuits and micro sensors. In this paper,a monolithic thermal vacuum sensor based on a micro-hotplate （MHP） and operating under constant bias voltage conditions was designed. A new monolithic integrating mode was proposed,in which the dielectric and passiva- tion layers in standard CMOS processes were used as sensor structure layers,gate polysilicon as the sacrificial layer,and the second polysilicon layer as the sensor heating resistor. Then, the fabricating processes were designed and the monolithic thermal vacuum sensor was fabricated with a 0. 6μm mixed signal CMOS process followed by sacrificial layer etching technology. The measurement results show that the fabricated monolithic vacuum sensor can measure the pressure range of 2- 10^5 Pa and the output voltage is adjustable.
基金Supported by the National High-Technology Research and Development Program of China under Grant No 2011AA010203the National Basic Research Program of China under Grant Nos 2011CB201704 and 2010CB327502the National Natural Science Foundation of China under Grant Nos 61434006 and 61106074
文摘A 330-500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194μW at 348 GHz. The saturation characteristic test shows that the output i dB compression point is about -8.5 dBm at 334 GHz and the maximum efficiency is obtained at the point, which is slightly below the 1 dB compression point. Compared with the conventional hybrid integrated circuit, a major advantage of the monolithic integrated circuit is the significant improvement of reliability and consistency. In this work, a terahertz monolithic frequency multiplier at this band is designed and fabricated.
基金Project supported by the National Natural Science Foundation of China(Grant No.61501091)the Fundamental Research Funds for the Central Universities of Ministry of Education of China(Grant Nos.ZYGX2014J003 and ZYGX2013J020)
文摘Design and characterization of a G-band（140–220 GHz） terahertz monolithic integrated circuit（TMIC） amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heterojunction bipolar transistor（DHBT）. An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the In P substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are-2.688 dBm at 210 GHz and-2.88 dBm at 220 GHz,respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.
文摘The optimization of high power terahertz monolithic integrated circuit (TMIC) is systemically studied based on the physical model of the Schottky barrier varactor (SBV) with interface defects and tunneling effect. An ultra-thin dielectric layer is added to describe the extra tunneling effect and the damping of thermionic emission current induced by the interface defects. Power consumption of the dielectric layer results in the decrease of capacitance modulation ration (Cmax/Cmin), and thus leads to poor nonlinear C–V characteristics. The proposed Schottky metal-brim (SMB) terminal structure could improve the capacitance modulation ration by reducing the influence of the interface charge and eliminating the fringing capacitance effect. Finally, a 215 GHz tripler TMIC is fabricated based on the SMB terminal structure. The output power is above 5 mW at 210–218 GHz and the maximum could exceed 10 mW at 216 GHz, which could be widely used in terahertz imaging, radiometers, and so on. This paper also provides theoretical support for the SMB structure to optimize the TMIC performance.
基金Supported by the self-funded project of Kunming Institute of Physics。
文摘A medium wave(MW)640×512(25μm)Mercury Cadmium Telluride(HgCdTe)polarimetric focal plane array(FPA)was demonstrated.The micro-polarizer array(MPA)has been carefully designed in terms of line grating structure optimization and crosstalk suppression.A monolithic fabrication process with low damage was explored,which was verified to be compatible well with HgCdTe devices.After monolithic integration of MPA,NETD<9.5 mK was still maintained.Furthermore,to figure out the underlying mechanism that dominat⁃ed the extinction ratio(ER),specialized MPA layouts were designed,and the crosstalk was experimentally vali⁃dated as the major source that impacted ER.By expanding opaque regions at pixel edges to 4μm,crosstalk rates from adjacent pixels could be effectively reduced to approximately 2%,and promising ERs ranging from 17.32 to 27.41 were implemented.
基金supported by the National Natural Science Foundation of China (Grant Nos.12192251,12334014,62335019,12134001,1230441812474378)+1 种基金the Quantum Science and Technology National Science and Technology Major Project(Grant No.2021ZD0301403)the Shanghai Municipal Science and Technology Major Project (Grant No.2019SHZDZX01)。
文摘Photonic neural networks(PNNs)of sufficiently large physical dimensions and high operation accuracies are envisaged as ideal candidates for breaking the major bottlenecks in the current artificial intelligence architectures in terms of latency,energy efficiency,and computational power.To achieve this vision,it is of vital importance to scale up the PNNs while simultaneously reducing the high demand on the dimensions required by them.The underlying cause of this strategy is the enormous gap between the scales of photonic and electronic integrated circuits.Here,we demonstrate monolithically integrated optical convolutional processors on thin film lithium niobate(TFLN)that harness inherent parallelism in photonics to enable large-scale programmable convolution kernels and,in turn,greatly reduce the dimensions required by subsequent fully connected layers.Experimental validation achieves high classification accuracies of 96%(86%)on the MNIST(Fashion-MNIST)dataset and 84.6%on the AG News dataset while dramatically reducing the required subsequent fully connected layer dimensions to 196×10(from 784×10)and 175×4(from 800×4),respectively.Furthermore,our devices can be driven by commercial field-programmable gate array systems;a unique advantage in addition to their scalable channel number and kernel size.Our architecture provides a solution to build practical machine learning photonic devices.
基金supported by the National Natural Science Foundation of China(52272177,12204010)the Foundation for the Introduction of High-Level Talents of Anhui University(S020118002/097)+1 种基金the University Synergy Innovation Program of Anhui Province(GXXT-2023-066)the Scientific Research Project of Anhui Provincial Higher Education Institution(2023AH040008)。
文摘Flexible electronics face critical challenges in achieving monolithic three-dimensional(3D)integration,including material compatibility,structural stability,and scalable fabrication methods.Inspired by the tactile sensing mechanism of the human skin,we have developed a flexible monolithic 3D-integrated tactile sensing system based on a holey MXene paste,where each vertical one-body unit simultaneously functions as a microsupercapacitor and pressure sensor.The in-plane mesopores of MXene significantly improve ion accessibility,mitigate the self-stacking of nanosheets,and allow the holey MXene to multifunctionally act as a sensing material,an active electrode,and a conductive interconnect,thus drastically reducing the interface mismatch and enhancing the mechanical robustness.Furthermore,we fabricate a large-scale device using a blade-coating and stamping method,which demonstrates excellent mechanical flexibility,low-power consumption,rapid response,and stable long-term operation.As a proof-of-concept application,we integrate our sensing array into a smart access control system,leveraging deep learning to accurately identify users based on their unique pressing behaviors.This study provides a promising approach for designing highly integrated,intelligent,and flexible electronic systems for advanced human-computer interactions and personalized electronics.
文摘The rapidly growing computational demands of artificial intelligence(AI)and complex optimization tasks are increasingly straining conventional electronic architectures,driving the search for novel,energy-efficient processing paradigms.Photonic computing,which harnesses the unique properties of light to perform computation,has emerged as a compelling alternative.This perspective highlights a key advancement:a versatile nonlinear optoelectronic engine based on integrated photodetectors and micro-ring modulators(PD+MRM).This engine enables crucial functionalities like nonlinear activation and signal relay,forming a core building block for monolithic photonic processors.Its application in integrating optical Ising machines for optimization and optical recurrent neural networks(RNNs)for AI has been examined recently.The PD+MRM unit’s inherent compactness,efficiency,and onchip reconfigurable nonlinearity address historical photonic computing challenges,signaling a shift towards more versatile and scalable monolithic photonic processors.
文摘A new type strongly gain coupled (GC) DFB laser and a new type self alignment spot size converter (SA SSC) are proposed and successfully fabricated.The strongly GC DFB laser is monolithically integrated with the SA SSC with three step epitaxies.A high single mode yield and large side mode suppression ratio is obtained from the strongly GC DFB laser.A near circle far field pattern is obtained by using the SA SSC.
文摘A behavioral model of the photodiode is presented.The model describes the relationship between photocurrent and incident optical power,and it also illustrates the impact of the reverse bias to the variation of the junction capacitance.According to this model,the photodiode and a CMOS receiver circuit are simulated and designed simultaneously under a universal circuit simulation environment.
文摘A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF （mixed signal, radio frequency） CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.
基金This work was financially supported by the Key Field R&D Program of Guangdong Province under Grant No.2021B0101300001the National Key R&D Program of China under Grant No.2022YFB3605003+3 种基金the Nation⁃al Natural Science Foundation of China under Grant Nos.52192614 and 62135013Beijing Natural Science Foundation under Grant No.4222077Beijing Science and Technology Plan under Grant No.Z221100002722019Guangdong Basic and Applied Basic Research Foundation under Grant No.2022B1515120081.
文摘A solar-blind multi-quantum well(MQW)structure wafer based on AlGaN materials is epitaxial growth by metal-organic chemical vapor deposition(MOCVD).The monolithically integrated photonic chips including light-emitting diodes(LEDs),waveguides,and photodetec-tors(PDs)are presented.The results of the finite-difference time-domain(FDTD)simulation confirm the strong light constraint of the wave-guide designed with the triangular structure in the optical coupling region.Furthermore,in virtue of predominant ultraviolet transverse mag-netic(TM)modes,the solar blind optical signal is more conducive to lateral transmission along the waveguide inside the integrated chip.The integrated PDs demonstrate sufficient photosensitivity to the optical signal from the integrated LEDs.When the LEDs are operated at 100 mA current,the photo-to-dark current ratio(PDCR)of the integrated PD is about seven orders of magnitude.The responsivity,specific detectivity,and external quantum efficiency of the integrated self-driven PD are 74.89 A/W,4.22×1013 Jones,and 3.38×104%,respectively.The stable on-chip optical information transmission capability of the monolithically integrated photonic chips confirms the great potential for application in large-scale on-chip optical communication in the future.
文摘A broadband amplifier with transadmittance and transimpedance stages is designed and two types of improved AGC amplifiers are developed on the base of theory study. Making use of the basic amplifier cells, a main amplifier IC for optical-fiber receivers is deliberated. By computer simulating the performances of the designed main amplifier meet the necessity of high gain and wide dynamic range . They are maximum voltage gain of 42 dB, the bandwidth of 730 MHz,the input signal( V p-p )range from 5 mV to 1 V,the output amplitude about 1 V, the dynamic range of 46 dB. The designed circuit containing no inductance and large capacitance will be convenient for realizing integration. A monolithic integrated design of 622 Mb/s main amplifier is completed.
文摘An integrated 3.3V/1.2V SC DC-DC converter operating under 10MHz with a fixed duty radio of 0.5 is presented.To improve the output current of the converter,CMOS technology is adopted to fabricate the switching devices,and mutually compensatory circuitry technology is also employed to double the output current furthermore.The simulation results using Hspice simulation software,show that the output currents of a single unit circuit and two unit circuits connected in a mutually compensatory manner of the improved converter is about 12.5mA and 26mA,respectively.The power conversion efficiency of the mutually compensatory circuit can amount to 73%,while its output voltage ripple is less than 1.5%.The converter is fabricated in standard Rohm 0.35μm CMOS technology in Tokyo University of Japan.The test result indicates that the output current of 9.8mA can be obtained from a single unit circuit of the improved converter.
文摘Monolithic electro absorption modulated distributed feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0 5V to 3 0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1 5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices.
文摘Two kinds of monolithically fabricated circuits are demonstrated in GaAs-based material systems using resonant tunneling diodes（RTD） and metal-semiconductor-metal photo detectors（MSM PD）. The electronic characteristics of these fabricated RTD devices,MSM devices,and integrated circuits are tested at room temperature. The results show that the current peak-to-valley ratio is 4,and the photocurrent at 5V is enhanced by a factor of nearly 9,from 2 to about 18μA by use of recessed electrodes. The working theory and logical functions of the circuits are validated.
基金supported by a National Research Foundation of Korea(NRF)Grant funded through the Basic Science Research Program(2021R1A2B5B03001691,2021M3H4A1A02050237,2016R1A5A1938472)by Creative Materials Discovery Program(NRF-2016M3D1A1900035).M.Cho acknowledges the financial support from the National Research Foundation of Korea(NRF)grant funded by the Korean government(2021R1A4A1033224).
文摘Active electronics are usually composed of semiconductor and metal electrodes which are connected by multiple vacuum deposition steps and photolithography patterning.However,the presence of interface of dissimilar material between semiconductor and metal electrode makes various problems in electrical contacts and mechanical failure.The ideal electronics should not have defective interfaces of dissimilar materials.In this study,we developed a novel method to fabricate active electronic components in a monolithic seamless fashion where both metal and semiconductor can be prepared from the same monolith material without creating a semiconductor-metal interface by reversible selective laser-induced redox(rSLIR)method.Furthermore,rSLIR can control the oxidation state of transition metal(Cu)to yield semiconductors with two different bandgap states(Cu_(2)O and CuO with bandgaps of 2.1 and 1.2 eV,respectively),which may allow multifunctional sensors with multiple bandgaps from the same materials.This novel method enables the seamless integration of single-phase Cu,Cu_(2)O,and CuO,simultaneously while allowing reversible,selec-tive conversion between oxidation states by simply shining laser light.Moreover,we fabricated a flexible monolithic metal-semiconduc-tor-metal multispectral photodetector that can detect multiple wavelengths.The unique monolithic characteristics of rSLIR process can provide next-generation electronics fabrication method overcoming the limitation of conventional photolithography methods.
基金Project supported by the National High Technology Research and Pevelopment Program of China (Grant Nos. 2011AA010303 and 2012AA012203)the National Basic Research Program of China (Grant No. 2011CB301702)the National Natural Science Foundation of China (Grant Nos. 61021003 and 61090392)
文摘Monolithic integration of four 1.55-μm-range InGaAsP/InP distributed feedback （DFB） lasers using varied ridge width with a 4 x 1-multimode-interference （MMI） optical combiner and a semiconductor optical amplifier （SOA） is demon- strated. The average output power and the threshold current are 1.8 mW and 35 mA, respectively, when the injection current of the SOA is 100 mA, with a side mode suppression ratio （SMSR） exceeding 40 dB. The four channels have a 1-nm average channel spacing and can operate separately or simultaneously.
基金Project supported by the Fundamental Research Funds for Central Universities,China(Grant No.XDJK2013B004)the Research Fund for the Doctoral Program of Southwest University,China(Grant No.SWU111030)the State Key Laboratory for Millimeter Waves of Southeast University,China(Grant No.K201312)
文摘The epitaxial material, device structure, and corresponding equivalent large signal circuit model of GaAs planar Schottky varactor diode are successfully developed to design and fabricate a monolithic phase shifter, which is based on right-handed nonlinear transmission lines and consists of a coplanar waveguide transmission line and periodically distributed GaAs planar Schottky varactor diode. The distributed-Schottky transmission-line-type phase shifter at a bias voltage greater than 1.5 V presents a continuous 0°–360° differential phase shift over a frequency range from 0 to 33 GHz. It is demonstrated that the minimum insertion loss is about 0.5 dB and that the return loss is less than-10 dB over the frequency band of 0–33 GHz at a reverse bias voltage less than 4.5 V. These excellent characteristics, such as broad differential phase shift, low insertion loss, and return loss, indicate that the proposed phase shifter can entirely be integrated into a phased array radar circuit.
基金Supported by National Natural Science Foundation of China (No. 60876009)Tianjin Research Program of Application Foundation and Advanced Technology (No. 09JCZDJC16600)
文摘Monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is an important development direction of ultra-high speed integrated circuit. A kind of top-RTD and bottom-HEMT material structure is epitaxied on InP substrate through molecular beam epitaxy. Based on wet chemical etching, metal lift-off and air bridge interconnection technology, RTD and HEMT are fabricated simultaneously. The peak-to-valley current ratio of RTD is 7.7 and the peak voltage is 0.33 V at room temperature. The pinch-off voltage is -0.5 V and the current gain cut-frequency is 30 GHz for a 1.0 μm gate length depletion mode HEMT. The two devices are conformable in current magnitude, which is suitable for the construction of various RTD/HEMT monolithic integration logic circuits.
