First-principles calculations of structural, electronic, optical, elastic, mechanical properties, and Born effective charges of monoclinic HfO2 are performed with the plane-wave pseudopotential technique based on the ...First-principles calculations of structural, electronic, optical, elastic, mechanical properties, and Born effective charges of monoclinic HfO2 are performed with the plane-wave pseudopotential technique based on the density-functional theory. The calculated structural properties are consistent with the previous theoretical and experimental results. The electronic structure reveals that monoclinic HfO2 has an indirect band gap. The analyses of density of states and Mulliken charges show mainly covalent nature in Hf-O bonds. Optical properties, including the dielectric function, refractive index, extinction coefficient, reflectivity, absorption coefficient, loss function, and optical conductivity each as a function of photon energy are calculated and show an optical anisotropy. Moreover, the independent elastic constants, bulk modulus, shear modulus, Young＇s modulus, Poisson＇s ratio, compressibility, Lam6 constant, sound velocity, Debye temperature, and Born effective charges of monoclinic HfO2 are obtained, which may help to understand monoclinic HfO2 for future work.展开更多
The structural relaxation, electronic structures, formation energies and transition energy levels of monoclinic HfO2 with neutral and charged oxygen vacancies have been studied using the first principles calculation b...The structural relaxation, electronic structures, formation energies and transition energy levels of monoclinic HfO2 with neutral and charged oxygen vacancies have been studied using the first principles calculation based on density-functional theory and generalized gradient approximation. The results show that oxygen vacancies with different charge states can be formed in m-HfO2 under both oxygen-rich and oxygen-poor conditions. Especially, lower formation energy is obtained in poor oxygen environment. In the presence of oxygen vacancies with different charge states, extra levels can be observed at different positions in the band gap. And the most stable charge states are obtained for varying Fermi levels in the HfO2 band gap. It is found that oxygen vacancy in m-HfO2 has a negative-U behavior.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11347199,11072225,10874141,and 10974160)the Specialized Research Fund for Doctoral Program of Higher Education of China(Grant No.20130184120028)+1 种基金the National Basic Research Program of China(GrantNo.2011CB808201)the Fundamental Research Funds for the Central Universities,China(Grant Nos.SWJTU112T23 and 2682013CX054)
文摘First-principles calculations of structural, electronic, optical, elastic, mechanical properties, and Born effective charges of monoclinic HfO2 are performed with the plane-wave pseudopotential technique based on the density-functional theory. The calculated structural properties are consistent with the previous theoretical and experimental results. The electronic structure reveals that monoclinic HfO2 has an indirect band gap. The analyses of density of states and Mulliken charges show mainly covalent nature in Hf-O bonds. Optical properties, including the dielectric function, refractive index, extinction coefficient, reflectivity, absorption coefficient, loss function, and optical conductivity each as a function of photon energy are calculated and show an optical anisotropy. Moreover, the independent elastic constants, bulk modulus, shear modulus, Young＇s modulus, Poisson＇s ratio, compressibility, Lam6 constant, sound velocity, Debye temperature, and Born effective charges of monoclinic HfO2 are obtained, which may help to understand monoclinic HfO2 for future work.
基金supported by the National Natural Science Foundation of China (No.51202196)the Northwestern Polytechnical University (NPU) Foundation for Fundamental Research (No.JC201111)+1 种基金the Research Fund of the State Key Laboratory of Solidification Processing (NWPU,(No.58-TZ-2011)the 111 Project (No.B08040)
文摘The structural relaxation, electronic structures, formation energies and transition energy levels of monoclinic HfO2 with neutral and charged oxygen vacancies have been studied using the first principles calculation based on density-functional theory and generalized gradient approximation. The results show that oxygen vacancies with different charge states can be formed in m-HfO2 under both oxygen-rich and oxygen-poor conditions. Especially, lower formation energy is obtained in poor oxygen environment. In the presence of oxygen vacancies with different charge states, extra levels can be observed at different positions in the band gap. And the most stable charge states are obtained for varying Fermi levels in the HfO2 band gap. It is found that oxygen vacancy in m-HfO2 has a negative-U behavior.
