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Plants Pass Down“Learned”Cold Tolerance through Molecular Memory
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作者 YAN Fusheng 《Bulletin of the Chinese Academy of Sciences》 2025年第2期107-110,共4页
A recent discovery in rice has revealed an elegant trick of nature:crops can teach their later generations to survive the cold through inherited memories written in chemical marks on the DNA letters,representing the f... A recent discovery in rice has revealed an elegant trick of nature:crops can teach their later generations to survive the cold through inherited memories written in chemical marks on the DNA letters,representing the first clear demonstration of what scientists call the“inheritance of acquired characteristics”-a phenomenon that biologists have debated for over two centuries. 展开更多
关键词 survive cold rice cold tolerance molecular memory inheritance acquired characteristics
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A novel approach towards molecular memory device in gate tunable structure of MoS_(2)-graphene
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作者 Rahul Tripathi Abha Misra 《Nano Research》 SCIE EI CAS CSCD 2021年第1期177-184,共8页
Molecular interaction in two-dimensional(2D)van der Waals(vdW)interfaces has drawn tremendous attention for extraordinary materials characteristics.Sofar sensing characteristics of molecular interaction has been explo... Molecular interaction in two-dimensional(2D)van der Waals(vdW)interfaces has drawn tremendous attention for extraordinary materials characteristics.Sofar sensing characteristics of molecular interaction has been exploited extensively to reach the detection limit to a few parts-per-billion(ppb)of molecules and far less attention is given to the evolution of persistent current state due to the molecular exposure.Our study focuses on molecular memory operation of MoS_(2)-graphene heterostructure based field effect transistor.Metastable resistance state of the device due to the external perturbation of molecules is tuned to get a nearly relaxation free current state at much lower molecular concentration of 10 ppb tofacilitate non-volatile memory features for molecular memory operation.An ultrafast switching operation in milli-second order is achieved at room temperature for the fastest recovery obtained sofar in any molecular sensor.The process is co-controlled both by molecular as well as external charge density. 展开更多
关键词 MoS_(2) GRAPHENE field effect transistor molecular memory trap charges
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Fabrication of a 256-bits organic memory by soft x-ray lithography 被引量:1
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作者 刘兴华 鲁闻生 +4 位作者 姬濯宇 涂德钰 朱效立 谢常青 刘明 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第5期499-504,共6页
This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writin... This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writing technology to the lithograph positive resist and polymethyl methacrylate on the polyimide film. Then Au is electroplated on the polyimide film. Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer. The 256-bits organic memory is achieved with the critical dimension of 250 nm. 展开更多
关键词 molecular memory crossbar array soft x-ray lithography electron beam lithography
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Electropolymerized films of redox-active ruthenium complexes for multistate near-infrared electrochromism,ion sensing,and information storage 被引量:5
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作者 Jiang-Yang Shao Chang-Jiang Yao +2 位作者 Bin-Bin Cui Zhong-Liang Gong Yu-Wu Zhong 《Chinese Chemical Letters》 SCIE CAS CSCD 2016年第8期1105-1114,1464,共10页
This paper summarizes our recent progress on the preparations and applications of electropolymerized thin films of redox-active ruthenium complexes.Thin films of vinyl-functionalized diruthenium or ruthenium-amine con... This paper summarizes our recent progress on the preparations and applications of electropolymerized thin films of redox-active ruthenium complexes.Thin films of vinyl-functionalized diruthenium or ruthenium-amine conjugated complexes are prepared by reductive electropolymerization.The resulting films are useful for multistate near-infrared electrochromism,ion sensing,and mimicking flip-flop and flip-flap-flop logic gates.The oxidative electropolymerization of diruthenium complexes with two distal triarylamine units affords electropolymers with an alternating diruthenium and tetraphenylbenzidine structural unit.The applications of the resulting films in multistate near-infrared electrochromism and resistive memory are discussed. 展开更多
关键词 ELECTROPOLYMERIZATION Ruthenium complexes ELECTROCHROMISM Thin films molecular memory
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