Poly(3-hexylthiophene)(P3HT)is one of the most promising hole-transporting materials in the pursuit of efficient and stable perovskite solar cells due to its outstanding stability and low cost.However,the intrinsic lo...Poly(3-hexylthiophene)(P3HT)is one of the most promising hole-transporting materials in the pursuit of efficient and stable perovskite solar cells due to its outstanding stability and low cost.However,the intrinsic low carrier density of P3 HT and poor contact between the P3HT/perovskite interface always lead to a low performance of the solar cell,while conventional chemical doping always makes the films unstable and limits the scalability.In this work,for the first time,we simultaneously enhanced the hole transporting properties of P3HT film and the interface of perovskite by doping it with a judiciously designed oxidized small molecule organic semiconductor.The organic salt not only can promote the lamellar crystallinity of P3HT to obtain better charge transport properties,but also reduce the defects of perovskite.As a result,we achieved champion efficiencies of 23.0%for small-area solar cells and 18.8%for larger-area modules(48.0 cm^(2)).This efficiency is the highest value for P3HT-based perovskite modules.Moreover,the solar cells show excellent operational stability,retaining over 95%of their initial efficiencies after1200 h of continuous operation.展开更多
MnO_(2) stands out among cathode materials for aqueous zinc-ion batteries(AZIBs)high capacity and voltage,it has poor stability and slow Zn^(2+) kinetics.Herein,we propose a dual-regulation strategy integrating copper...MnO_(2) stands out among cathode materials for aqueous zinc-ion batteries(AZIBs)high capacity and voltage,it has poor stability and slow Zn^(2+) kinetics.Herein,we propose a dual-regulation strategy integrating copper doping and carbon-based confinement.Residual carbon(RC),derived from acid-washed coal gasification fine slag(CGFS),serves as a conductive and porous framework for the directional growth of Cu-doped MnO_(2) nanowires(CMO@RC).The synergistic modulation of Cu-induced electronic structure tuning and carbon confinement induced mechanical/electrical stabilization significantly enhances Zn^(2+) transport and electrochemical performance.CMO@RC achieves a high capacity of 563 mA·h·g^(−1) at 0.1 A·g^(−1) and maintains 106%after 1000 cycles at 1 A·g^(−1).Kinetic analyses confirm the dual-path Zn^(2+) diffusion and accelerated reaction kinetics,while DFT calculations reveal that Cu doping enhances Mn 3d orbital hybridization and electron interaction with carbon,elevating the density of states near the Fermi level and reducing charge transfer barriers.Furthermore,pouch cell testing demonstrates outstanding flexibility and mechanical resilience.This study provides a cost-effective and scalable strategy for high-performance AZIBs,leveraging both experimental and theoretical validations.展开更多
A modulated photoluminescence nanosensor was developed for the quantitative detection of formaldehyde with nitrogen-doped graphene quantum dots and melamine. The sensing system was based on the different activated eff...A modulated photoluminescence nanosensor was developed for the quantitative detection of formaldehyde with nitrogen-doped graphene quantum dots and melamine. The sensing system was based on the different activated effects of melamine and hydrogen peroxide on the photoluminescence intensity of nitrogendoped graphene quantum dots. Under the optimal conditions, the modulated photoluminescence sensing system can be used to detect formaldehyde with a good linear relationship between the nitrogen-doped graphene quantum dots photoluminescence difference and the concentration of formaldehyde. The novel sensing system provided new directions for the detection of formaldehyde with high selectivity and quick response.展开更多
The resolution characteristic can be obtained by the modulation transfer function （MTF） of a GaAs/GaA1As photocathode. After establishing the theoretical model of GaAs（100）-oriented atomic configuration and the fo...The resolution characteristic can be obtained by the modulation transfer function （MTF） of a GaAs/GaA1As photocathode. After establishing the theoretical model of GaAs（100）-oriented atomic configuration and the formula for the ionized impurity scattering of the non-equilibrium carriers, this paper calculates the trajectories of photoelectrons in a photocathode. Thus the distribution of photoelectron spots on the emit-face is obtained, which is namely the point spread function. The MTF is obtained by Fourier transfer of the line spread function obtained from the point spread function. The MTF obtained from these calculations is shown to depend heavily on the electron diffusion length, and enhanced considerably by decreasing the electron diffusion length and increasing the doping concentration. Furthermore, the resolution is enhanced considerably by increasing the active-layer thickness, especially at high spatial frequencies. The best spatial resolution is 860 lp/mm, for the GaAs photocathode of doping concentration 1 ×10^19 cm 3 electron diffusion length 3.6 μm and the active-layer thickness 2 μm, under the 633-nm light irradiated. This research will contribute to the future improvement of the cathode＇s resolution for preparing a high performance GaAs photocathode, and improve the resolution of a low light level image intensifier.展开更多
The commercial viability of thermoelectric(TE)devices relies heavily on two factors:cost reduction and efficiency enhancement.In this study,we first produce p-type Cu_(12)Sb_(4)S_(16-x)(x=0,3,4)using a low-temperature...The commercial viability of thermoelectric(TE)devices relies heavily on two factors:cost reduction and efficiency enhancement.In this study,we first produce p-type Cu_(12)Sb_(4)S_(16-x)(x=0,3,4)using a low-temperature bottom-up approach and demonstrate Cu_(12)Sb_(4)S_(13)to show the best TE performance among the three tested compositions.Subsequently,the TE energy conversion efficiency of Cu_(12)Sb_(4)S_(13)is further enhanced by optimizing its electronic band structure through the incorporation of small amounts of tel-lurium.At an optimal Te content of 5 mol%,more than a twofold increase in the TE figure of merit(zT)is obtained.To gain insight into the mechanism of improvement on the transport properties of the mate-rial,we compare the interphase transport mechanism by incorporating nanodomains of different metals(Ag and Cu)into the Cu_(12)Sb_(4)S_(13)matrix.The improved electrical conductivity obtained with Cu_(12)Sb_(4)S_(13)-Te nanocomposites is attributed to a charge flooding of the Cu_(12)Sb_(4)S_(13)surface.In contrast,excessive down-ward band-bending at the interphases of Ag/Cu metal-semiconductor drastically reduces the electrical conductivity.Besides,a weighted mobility(μw)analysis shows a dominant thermal activation of carri-ers in Cu_(12)Sb_(4)S_(13)-Te nanocomposites.In this material,a strong decrease in lattice thermal conductivity is also found,which is associated with a phonon-carrier scattering mechanism.Our work shows the impor-tance of proper band-engineering in TE nanocomposites to decouple electrical and thermal transport to enhance TE performance,and the efficacy ofμw for electrical and thermal transport analysis.展开更多
Unusual quantum phenomena usually emerge upon doping Mott insulators.Using a molecular beam epitaxy system integrated with cryogenic sc√annin√g tunneling microscope,we investigate the electronic structure of a modul...Unusual quantum phenomena usually emerge upon doping Mott insulators.Using a molecular beam epitaxy system integrated with cryogenic sc√annin√g tunneling microscope,we investigate the electronic structure of a modulation-doped Mott insulator Sn/Si(111)-(√3×√3)R30°.In underdoped regions,we observe a universal pseudogap opening around the Fermi level,which changes little with the applied magnetic field and the occurrence of Sn vacancies.The pseudogap gets smeared out at elevated temperatures and alters in size with the spatial confinement of the Mott insulating phase.Our findings,along with the previously observed superconductivity at a higher doping level,are highly reminiscent of the electronic phase diagram in the doped copper oxide compounds.展开更多
To solve the problem of the low on-state current in p-type tunnel field-effect transistors(p-TFETs),this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the infl...To solve the problem of the low on-state current in p-type tunnel field-effect transistors(p-TFETs),this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling barrier.Doping-regulated silicon-based high on-state p-TFET devices are designed and fabricated,and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of other devices with the same structure.This method provides a new idea for the realization of high on-state current TFET devices.展开更多
We demonstrate an electric-controlled terahertz（THz） modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by e...We demonstrate an electric-controlled terahertz（THz） modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by electrically controlling the monolayer silicon-based device. The modulation depth reached 100% almost when the applied voltage was 7V at an external laser intensity of 0.6W/cm2. The saturation voltage reduced with the increase of the photo-excited intensity. In a THz continuous wave（CW）system, a significant fall in both THz transmission and reflection was also observed with the increase of applied voltage. This reduction in the THz transmission and reflection was induced by the absorption for electron injection. The results show that a high-efficiency and high modulation depth broadband electric-controlled terahertz modulator in a pure Si structure has been realized.展开更多
Modulation-doped AlGaAs/GaAs structures were grown on GaAs(100) substrate by solid source molecular beam epitaxy(SSMBE) system. The factors which influence the electron mobility were investigated. After growing InP ba...Modulation-doped AlGaAs/GaAs structures were grown on GaAs(100) substrate by solid source molecular beam epitaxy(SSMBE) system. The factors which influence the electron mobility were investigated. After growing InP based materials, growth conditions were deteriorated, but by an appropriate method and using reasonable process high electron mobility(77 K) of more than 1.50×10~5 cm^2/(V·s) can still be obtained. The structures and growth conditions have been studied and optimized via Hall measurements. For a typical sample, 2.0 K electron mobility as high as 1.78×10~6 cm^2/(V·s) is achieved, and the quantum Hall oscillation phenomena can be observed.展开更多
Construction of elaborate configuration to enhance the intrinsic activity of NiMo-based catalyst candidates holds promise for accelerating the hydrogen evolution reaction(HER)kinetics.Herein,a novel cerium-doped NiMo ...Construction of elaborate configuration to enhance the intrinsic activity of NiMo-based catalyst candidates holds promise for accelerating the hydrogen evolution reaction(HER)kinetics.Herein,a novel cerium-doped NiMo phosphate(labeled as Ce-NiMo(PO_(4))_(0.66))is designed and fabricated via a facile hydrothermal and phosphatization method.A comprehensive characterization reveals that the introduction of the rare metal element cerium with an enriched 4f electronic distribution near the Fermi level modulates the hybridization of the 3d-2p orbitals and optimizes the electronic structure of the NiMo-based phosphate catalysts,which leads to the synergy between the nickel-molybdenum dual sites and the phosphate active unit to synchronously enhance the water dissociation and proton dehydrogenation transfer of the HER process.Consequently,Ce-NiMo(PO_(4))0.66 exhibits excellent alkaline HER performance with overpotentials at 10 and 500 mA·cm^(-2)current densities being only 40 and 295 mV,respectively,and desirable long-term durability at industrial current densities of 500 mA·cm^(-2).An overall hydrazine splitting(OHzS)constructed with Ce-NiMo(PO_(4))_(0.66)as a hydrazine oxidation reaction(HzOR)and HER bifunctional electrocatalyst has been constructed to achieve industrial current densities at the low voltage of 0.92 V,verifying its practical feasibility for sustainable hydrogen production and degradation of hydrazine pollutants.This work highlights that regulating the 3d-2p hybridization state through the inducing 4f orbital electronic state is a feasible means for enhancing the HER activity of transition metal compound catalysts.展开更多
Recent studies have successfully demonstrated high-Tc superconductivity in bilayer nickelate La3Ni2O7.However,research on modulating the structural and transport characteristics of La3Ni2O7 films by applying“chemical...Recent studies have successfully demonstrated high-Tc superconductivity in bilayer nickelate La3Ni2O7.However,research on modulating the structural and transport characteristics of La3Ni2O7 films by applying“chemical”compressive pressure through cation substitution is still limited.Here,we address this issue in the La_(3−x)Nd_(x)Ni_(2)O_(7)(x=0,1.0,1.5,2.0,and 2.5)thin film samples.It was found that using Nd3+with a smaller radius instead of La3+can reduce the c-axis lattice constant and shift the metal-insulator transition(MIT)temperature TMIT.To probe the origin of the MIT at cryogenic temperatures,experimental measurements of magnetoresistance were conducted,and theoretical analysis was carried out using the Kondo model,Hikami-Larkin-Nagaoka equation,and other methods.The results indicate that as Nd doping rises,the contributions of the Kondo effect and two-dimensional weak localization(WL)first decrease and then increase.The total contribution of WL and the Kondo effect in the mid-doped La_(1.5)Nd_(1.5)Ni_(2)O_(7)sample was the smallest,which to some extent explains the changes in TMIT.The Kondo effect dominates in other La_(3−x)Nd_(x)Ni_(2)O_(7)(x=0,1.0,2.0,and 2.5)samples.This work demonstrates that cation doping has a significant impact on bilayer nickelates,providing experimental evidence for understanding the physical mechanism of the MIT in bilayer nickelates.展开更多
A novel super-junction lateral double-diffused metal-oxide semiconductor （SJ-LDMOS） with a partial lightly doped P pillar （PD） is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge...A novel super-junction lateral double-diffused metal-oxide semiconductor （SJ-LDMOS） with a partial lightly doped P pillar （PD） is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect. Secondly, the new electric field peak produced by the P/P junction modulates the surface electric field distribution. Both of these result in a high breakdown voltage （BV）. In addition, due to the same conduction paths, the specific on-resistance （Ron,sp） of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at a 15 μm drift length, resulting in a BV of 300 V.展开更多
We investigate the mechanism for the improvement of p-type doping efficiency in Mg-Al0.14Ga0.86N/GaN super- lattices （SLs）. It is shown that the hole concentration of SLs increases by nearly an order of magnitude, f...We investigate the mechanism for the improvement of p-type doping efficiency in Mg-Al0.14Ga0.86N/GaN super- lattices （SLs）. It is shown that the hole concentration of SLs increases by nearly an order of magnitude, from 1.1 × 1017 to 9.3×1017 cm-3, when an AlN interlayer is inserted to modulate the strains. SchrSdinger-Poisson self-consistent calculations suggest that such an increase could be attributed to the reduction of donor-like defects caused by the strain modulation induced by the AlN interlayer. Additionally, the donor-acceptor pair emission exhibits a remarkable decrease in intensity of the cathodoluminescence spectrumlfor SLs with an A1N interlayer. This supports the theoretical calculations and indicates that the strain modulation of SLs could be beneficial to the donor-like defect suppression as well as the p-type doping efficiency improvement.展开更多
In this paper,the chaotic behaviors in an erbium-doped fiber（EDF） single-ring laser（EDFSRL） are investigated experimentally by using the loss modulation method.An electro-optic modulator（EOM） made of LiNbO 3 cry...In this paper,the chaotic behaviors in an erbium-doped fiber（EDF） single-ring laser（EDFSRL） are investigated experimentally by using the loss modulation method.An electro-optic modulator（EOM） made of LiNbO 3 crystal is added to the system.Thus,by changing the modulation voltage and the modulation frequency of the EOM,the freedom of the EDFSRL system is increased.The chaotic characteristics of the system are studied by observing the time series and the power spectra.The experimental results indicate that the erbium-doped fiber single-ring laser system can enter into chaos states through period-doubling bifurcation and intermittency routes.展开更多
As a promising cathode material for sodium ion batteries,honeycomb-ordered layered Na_(3)Ni_(2)Sb O_(6)still suffers from rapid capacity fading because of partially irreversible phase transition.Herein,a substitution ...As a promising cathode material for sodium ion batteries,honeycomb-ordered layered Na_(3)Ni_(2)Sb O_(6)still suffers from rapid capacity fading because of partially irreversible phase transition.Herein,a substitution of Na+by Rb+with a larger ionic radius in honeycomb layered Na_(3)-xRbxNi_(2)Sb O_(6)is proposed to modulate the interlayer structure.The results unveil that biphasic transition reversibility of the intermediate P′3phase is substantially enhanced,and the structure evolution behavior during the charge/discharge process changes due to the structural modulation,which contributes to a suppression of the unfavorable O_(1)phase and an alleviation of the lattice distortion.Moreover,Rb substituted samples exhibited an improved Na+(de)intercalation thermodynamics and kinetics.Attributed to the modifications,the sample with optimized Rb content delivers superior cycle stability and rate capacity,demonstrating a feasible strategy for suppressing irreversible phase transition and developing high-performance honeycomb layered materials for sodium ion batteries.展开更多
To realize the continuous production of hydrogen energy,the efficient photocatalysts are required in the heterogeneous reaction for water splitting.Herein,we reported a surface modulation strategy,via doping oxygen at...To realize the continuous production of hydrogen energy,the efficient photocatalysts are required in the heterogeneous reaction for water splitting.Herein,we reported a surface modulation strategy,via doping oxygen atoms to tune the surface state of ZnIn_(2)S_(4)nanosheets with cocatalyst MoS_(2)modification,to enhance water adsorption and surface catalytic reaction for boosting the photocatalytic activity.Consequently,MoS_(2)/O-ZnIn_(2)S_(4)photocatalysts showed a remarkably superior photocatalytic H_(2)production performance of 4.002 mmol g^(-1)h^(-1)and an apparent quantum yield(AQY)of~2.53%,5.4 folds higher than ZnIn_(2)S_(4).Using operando infrared spectroscopy and DFT calculation,we revealed the dynamic structural evolution,as well as the active sites for water adsorption and the catalytic reaction at the MoS_(2)/O ZnIn_(2)S_(4)interface.This work reveals the effect of surface modulation on the photocatalytic activity for MoS_(2)/O-ZnIn_(2)S_(4)and offers a feasible method to devise excellent nanomaterial photocatalysts for H_(2)production.展开更多
Based on our previous work, the influence of annealing conditions on impurity species in in-situ arsenic （As）- doped Hg1-xCdxTe （x ≈ 0.3） grown by molecular beam epitaxy has been systematically investigated by mo...Based on our previous work, the influence of annealing conditions on impurity species in in-situ arsenic （As）- doped Hg1-xCdxTe （x ≈ 0.3） grown by molecular beam epitaxy has been systematically investigated by modulated photoluminescence spectra. The results show that （i） the doped-As acting as undesirable shallow/deep levels in asgrown can be optimized under proper annealing conditions and the physical mechanism of the disadvantage of high activation temperature, commonly assumed to be more favourable for As activation, has been discussed as compared with the reports in the As-implanted HgCdTe epilayers （x ≈ 0.39）, （ii） the density of VHg has an evident effect on the determination of bandgap （or composition） of epilayers and the excessive introduction of VHg will lead to a short-wavelength shift of epilayers, and （iii） the VHs prefers forming the VHg-ASHg complex when the inactivated-As （AsHg or related） coexists in a certain density, which makes it difficult to annihilate VHg in As-doped epilayers. As a result, the bandedge electronic structures of epilayers under different conditions have been drawn as a brief guideline for preparing extrinsic p-type epilayers or related devices.展开更多
The photoluminescence （PL） property effect of Sc3＋ on the Er3＋/Y3＋/Yb3＋ doped Al2O3 powders prepared by sol-gel method has been investigated. The X-ray diffraction （XRD） and transmission electron microscopy （...The photoluminescence （PL） property effect of Sc3＋ on the Er3＋/Y3＋/Yb3＋ doped Al2O3 powders prepared by sol-gel method has been investigated. The X-ray diffraction （XRD） and transmission electron microscopy （TEM） implied that the distribution of dopants （Er3＋ , Y3＋ , Yb3＋ , Sc3＋） was improved effectively with the rise of Sc3＋ concentration. The Fourier transform infrared spectra （FTIR） results demonstrated that the ligand around the quenching center -OH and the population of -OH were altered by introducing different amounts of Sc3＋ . The PL intensity centered at 1530 nm was increasingly improved with the rise of Sc3＋ concentration, as well as the corresponding full widths at the half maximum （FWHM） and lifetime. The optimized PL intensity was 4.7 times higher than that non-Sc3＋ doped sample for the Al2O3 powders codoped with 10mol% Sc3＋ . This material can be promising candidates for optical fiber amplifier.展开更多
基金financially supported by the National Natural Science Foundation of China(52472248 and 22075221)the Key Research and Development Project of Shanxi Province(202202060301003 and 202202060301015)the Innovation Program of Wuhan-Shuguang Project(2023010201020367)。
文摘Poly(3-hexylthiophene)(P3HT)is one of the most promising hole-transporting materials in the pursuit of efficient and stable perovskite solar cells due to its outstanding stability and low cost.However,the intrinsic low carrier density of P3 HT and poor contact between the P3HT/perovskite interface always lead to a low performance of the solar cell,while conventional chemical doping always makes the films unstable and limits the scalability.In this work,for the first time,we simultaneously enhanced the hole transporting properties of P3HT film and the interface of perovskite by doping it with a judiciously designed oxidized small molecule organic semiconductor.The organic salt not only can promote the lamellar crystallinity of P3HT to obtain better charge transport properties,but also reduce the defects of perovskite.As a result,we achieved champion efficiencies of 23.0%for small-area solar cells and 18.8%for larger-area modules(48.0 cm^(2)).This efficiency is the highest value for P3HT-based perovskite modules.Moreover,the solar cells show excellent operational stability,retaining over 95%of their initial efficiencies after1200 h of continuous operation.
基金support from the Key projects of scientific research projects of universities in Anhui Province(2024AH050360).
文摘MnO_(2) stands out among cathode materials for aqueous zinc-ion batteries(AZIBs)high capacity and voltage,it has poor stability and slow Zn^(2+) kinetics.Herein,we propose a dual-regulation strategy integrating copper doping and carbon-based confinement.Residual carbon(RC),derived from acid-washed coal gasification fine slag(CGFS),serves as a conductive and porous framework for the directional growth of Cu-doped MnO_(2) nanowires(CMO@RC).The synergistic modulation of Cu-induced electronic structure tuning and carbon confinement induced mechanical/electrical stabilization significantly enhances Zn^(2+) transport and electrochemical performance.CMO@RC achieves a high capacity of 563 mA·h·g^(−1) at 0.1 A·g^(−1) and maintains 106%after 1000 cycles at 1 A·g^(−1).Kinetic analyses confirm the dual-path Zn^(2+) diffusion and accelerated reaction kinetics,while DFT calculations reveal that Cu doping enhances Mn 3d orbital hybridization and electron interaction with carbon,elevating the density of states near the Fermi level and reducing charge transfer barriers.Furthermore,pouch cell testing demonstrates outstanding flexibility and mechanical resilience.This study provides a cost-effective and scalable strategy for high-performance AZIBs,leveraging both experimental and theoretical validations.
基金Funded by the National Natural Science Foundation of China(Nos.21275063 and 21005029)the Development and Reform Commission of Jilin Province(No.2015Y048)the Youth Science Fund of Jilin Province(20140520081JH)
文摘A modulated photoluminescence nanosensor was developed for the quantitative detection of formaldehyde with nitrogen-doped graphene quantum dots and melamine. The sensing system was based on the different activated effects of melamine and hydrogen peroxide on the photoluminescence intensity of nitrogendoped graphene quantum dots. Under the optimal conditions, the modulated photoluminescence sensing system can be used to detect formaldehyde with a good linear relationship between the nitrogen-doped graphene quantum dots photoluminescence difference and the concentration of formaldehyde. The novel sensing system provided new directions for the detection of formaldehyde with high selectivity and quick response.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60678043)the Research and Innovation Plan for Graduate Students of Jiangsu Higher Education Institutions,China (Grant No. CX09B 096Z)
文摘The resolution characteristic can be obtained by the modulation transfer function （MTF） of a GaAs/GaA1As photocathode. After establishing the theoretical model of GaAs（100）-oriented atomic configuration and the formula for the ionized impurity scattering of the non-equilibrium carriers, this paper calculates the trajectories of photoelectrons in a photocathode. Thus the distribution of photoelectron spots on the emit-face is obtained, which is namely the point spread function. The MTF is obtained by Fourier transfer of the line spread function obtained from the point spread function. The MTF obtained from these calculations is shown to depend heavily on the electron diffusion length, and enhanced considerably by decreasing the electron diffusion length and increasing the doping concentration. Furthermore, the resolution is enhanced considerably by increasing the active-layer thickness, especially at high spatial frequencies. The best spatial resolution is 860 lp/mm, for the GaAs photocathode of doping concentration 1 ×10^19 cm 3 electron diffusion length 3.6 μm and the active-layer thickness 2 μm, under the 633-nm light irradiated. This research will contribute to the future improvement of the cathode＇s resolution for preparing a high performance GaAs photocathode, and improve the resolution of a low light level image intensifier.
基金Dr.K.H.Lim acknowledges the financial support of the National Natural Science Foundation of China(Grant No.22208293)Research Funds of the Institute of Zhejiang University-Quzhou(Nos.IZQ2021RCZX003,IZQ2021RCZX002,IZQ2021KJ2024,IZQ2022KYZX09)+3 种基金supported by the State Key Laboratory of Fluorinated Greenhouse gases Replacement and Treatment(No.SKLFGGRT2022001)the State Key Laboratory of Electrical Insulation and Power Equipment(No.EIPE23201)Dr.Y.Liu acknowledges funding from the National Natural Science Foundation of China(NSFC)(Grants No.22209034)the Innovation and Entrepreneurship Project of Overseas Returnees in Anhui Province(Grants No.2022LCX002)。
文摘The commercial viability of thermoelectric(TE)devices relies heavily on two factors:cost reduction and efficiency enhancement.In this study,we first produce p-type Cu_(12)Sb_(4)S_(16-x)(x=0,3,4)using a low-temperature bottom-up approach and demonstrate Cu_(12)Sb_(4)S_(13)to show the best TE performance among the three tested compositions.Subsequently,the TE energy conversion efficiency of Cu_(12)Sb_(4)S_(13)is further enhanced by optimizing its electronic band structure through the incorporation of small amounts of tel-lurium.At an optimal Te content of 5 mol%,more than a twofold increase in the TE figure of merit(zT)is obtained.To gain insight into the mechanism of improvement on the transport properties of the mate-rial,we compare the interphase transport mechanism by incorporating nanodomains of different metals(Ag and Cu)into the Cu_(12)Sb_(4)S_(13)matrix.The improved electrical conductivity obtained with Cu_(12)Sb_(4)S_(13)-Te nanocomposites is attributed to a charge flooding of the Cu_(12)Sb_(4)S_(13)surface.In contrast,excessive down-ward band-bending at the interphases of Ag/Cu metal-semiconductor drastically reduces the electrical conductivity.Besides,a weighted mobility(μw)analysis shows a dominant thermal activation of carri-ers in Cu_(12)Sb_(4)S_(13)-Te nanocomposites.In this material,a strong decrease in lattice thermal conductivity is also found,which is associated with a phonon-carrier scattering mechanism.Our work shows the impor-tance of proper band-engineering in TE nanocomposites to decouple electrical and thermal transport to enhance TE performance,and the efficacy ofμw for electrical and thermal transport analysis.
基金by the National Natural Science Foundation of China(Grant Nos.62074092 and 11604366)the National Key R&D Program of China(Grant No.2018YFA0305603)。
文摘Unusual quantum phenomena usually emerge upon doping Mott insulators.Using a molecular beam epitaxy system integrated with cryogenic sc√annin√g tunneling microscope,we investigate the electronic structure of a modulation-doped Mott insulator Sn/Si(111)-(√3×√3)R30°.In underdoped regions,we observe a universal pseudogap opening around the Fermi level,which changes little with the applied magnetic field and the occurrence of Sn vacancies.The pseudogap gets smeared out at elevated temperatures and alters in size with the spatial confinement of the Mott insulating phase.Our findings,along with the previously observed superconductivity at a higher doping level,are highly reminiscent of the electronic phase diagram in the doped copper oxide compounds.
基金Project supported by the Key Research and Development Program of Shaanxi(Grant No.2021GY-010)the National Defense Science and Technology Foundation Strengthening Program of China(Grant No.2019-XXXX-XX-236-00).
文摘To solve the problem of the low on-state current in p-type tunnel field-effect transistors(p-TFETs),this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling barrier.Doping-regulated silicon-based high on-state p-TFET devices are designed and fabricated,and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of other devices with the same structure.This method provides a new idea for the realization of high on-state current TFET devices.
基金supported by the Natural Science Foundation of Beijing under Grant No.4144069the Science and Technology Project of Beijing Municipal Education Commission under Grant No.KM201410028004
文摘We demonstrate an electric-controlled terahertz（THz） modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by electrically controlling the monolayer silicon-based device. The modulation depth reached 100% almost when the applied voltage was 7V at an external laser intensity of 0.6W/cm2. The saturation voltage reduced with the increase of the photo-excited intensity. In a THz continuous wave（CW）system, a significant fall in both THz transmission and reflection was also observed with the increase of applied voltage. This reduction in the THz transmission and reflection was induced by the absorption for electron injection. The results show that a high-efficiency and high modulation depth broadband electric-controlled terahertz modulator in a pure Si structure has been realized.
文摘Modulation-doped AlGaAs/GaAs structures were grown on GaAs(100) substrate by solid source molecular beam epitaxy(SSMBE) system. The factors which influence the electron mobility were investigated. After growing InP based materials, growth conditions were deteriorated, but by an appropriate method and using reasonable process high electron mobility(77 K) of more than 1.50×10~5 cm^2/(V·s) can still be obtained. The structures and growth conditions have been studied and optimized via Hall measurements. For a typical sample, 2.0 K electron mobility as high as 1.78×10~6 cm^2/(V·s) is achieved, and the quantum Hall oscillation phenomena can be observed.
基金supported by the National Natural Science Foundation of China(No.22278097)Heilongjiang Province Universities Basic Scientific Research Business Fee Project(Nos.2022-KYYWF-0568 and 2023-KYYWF-0527)+2 种基金the Natural Science Foundation of Heilongjiang Province(No.YQ2021B004)the Postdoctoral fellowship of Heilongjiang Province(No.LBH-Z23156)the Postdoctoral Fellowship Program of CPSF(No.GZC20233449).
文摘Construction of elaborate configuration to enhance the intrinsic activity of NiMo-based catalyst candidates holds promise for accelerating the hydrogen evolution reaction(HER)kinetics.Herein,a novel cerium-doped NiMo phosphate(labeled as Ce-NiMo(PO_(4))_(0.66))is designed and fabricated via a facile hydrothermal and phosphatization method.A comprehensive characterization reveals that the introduction of the rare metal element cerium with an enriched 4f electronic distribution near the Fermi level modulates the hybridization of the 3d-2p orbitals and optimizes the electronic structure of the NiMo-based phosphate catalysts,which leads to the synergy between the nickel-molybdenum dual sites and the phosphate active unit to synchronously enhance the water dissociation and proton dehydrogenation transfer of the HER process.Consequently,Ce-NiMo(PO_(4))0.66 exhibits excellent alkaline HER performance with overpotentials at 10 and 500 mA·cm^(-2)current densities being only 40 and 295 mV,respectively,and desirable long-term durability at industrial current densities of 500 mA·cm^(-2).An overall hydrazine splitting(OHzS)constructed with Ce-NiMo(PO_(4))_(0.66)as a hydrazine oxidation reaction(HzOR)and HER bifunctional electrocatalyst has been constructed to achieve industrial current densities at the low voltage of 0.92 V,verifying its practical feasibility for sustainable hydrogen production and degradation of hydrazine pollutants.This work highlights that regulating the 3d-2p hybridization state through the inducing 4f orbital electronic state is a feasible means for enhancing the HER activity of transition metal compound catalysts.
基金supported by the Natural Science Foundation of Guangdong Province of China(Grant No.2025A1515011071)the National Natural Science Foundation of China(Grant Nos.92065110,11974048,and 12074334)the Beijing Municipal Natural Science Foundation Key Research Topics(Grant No.Z230006)。
文摘Recent studies have successfully demonstrated high-Tc superconductivity in bilayer nickelate La3Ni2O7.However,research on modulating the structural and transport characteristics of La3Ni2O7 films by applying“chemical”compressive pressure through cation substitution is still limited.Here,we address this issue in the La_(3−x)Nd_(x)Ni_(2)O_(7)(x=0,1.0,1.5,2.0,and 2.5)thin film samples.It was found that using Nd3+with a smaller radius instead of La3+can reduce the c-axis lattice constant and shift the metal-insulator transition(MIT)temperature TMIT.To probe the origin of the MIT at cryogenic temperatures,experimental measurements of magnetoresistance were conducted,and theoretical analysis was carried out using the Kondo model,Hikami-Larkin-Nagaoka equation,and other methods.The results indicate that as Nd doping rises,the contributions of the Kondo effect and two-dimensional weak localization(WL)first decrease and then increase.The total contribution of WL and the Kondo effect in the mid-doped La_(1.5)Nd_(1.5)Ni_(2)O_(7)sample was the smallest,which to some extent explains the changes in TMIT.The Kondo effect dominates in other La_(3−x)Nd_(x)Ni_(2)O_(7)(x=0,1.0,2.0,and 2.5)samples.This work demonstrates that cation doping has a significant impact on bilayer nickelates,providing experimental evidence for understanding the physical mechanism of the MIT in bilayer nickelates.
基金supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2010ZX02201)the National Natural Science Foundation of China (Grant No. 61176069)the National Defense Pre-Research of China (Grant No. 51308020304)
文摘A novel super-junction lateral double-diffused metal-oxide semiconductor （SJ-LDMOS） with a partial lightly doped P pillar （PD） is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect. Secondly, the new electric field peak produced by the P/P junction modulates the surface electric field distribution. Both of these result in a high breakdown voltage （BV）. In addition, due to the same conduction paths, the specific on-resistance （Ron,sp） of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at a 15 μm drift length, resulting in a BV of 300 V.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61076012,61076013,and 51102003)the National High Technology Research and Development Program of China (Grant No. 2007AA03Z403)+1 种基金the Specialized Research Fund for the Doctoral Program of Higher Education,China (Grant No. 20100001120014)the National Basic Research Program of China (Grant No. 2012CB619304)
文摘We investigate the mechanism for the improvement of p-type doping efficiency in Mg-Al0.14Ga0.86N/GaN super- lattices （SLs）. It is shown that the hole concentration of SLs increases by nearly an order of magnitude, from 1.1 × 1017 to 9.3×1017 cm-3, when an AlN interlayer is inserted to modulate the strains. SchrSdinger-Poisson self-consistent calculations suggest that such an increase could be attributed to the reduction of donor-like defects caused by the strain modulation induced by the AlN interlayer. Additionally, the donor-acceptor pair emission exhibits a remarkable decrease in intensity of the cathodoluminescence spectrumlfor SLs with an A1N interlayer. This supports the theoretical calculations and indicates that the strain modulation of SLs could be beneficial to the donor-like defect suppression as well as the p-type doping efficiency improvement.
基金Project supported by the Science and Technology Development Program of Jilin Province,China (Grant No. 20090309)
文摘In this paper,the chaotic behaviors in an erbium-doped fiber（EDF） single-ring laser（EDFSRL） are investigated experimentally by using the loss modulation method.An electro-optic modulator（EOM） made of LiNbO 3 crystal is added to the system.Thus,by changing the modulation voltage and the modulation frequency of the EOM,the freedom of the EDFSRL system is increased.The chaotic characteristics of the system are studied by observing the time series and the power spectra.The experimental results indicate that the erbium-doped fiber single-ring laser system can enter into chaos states through period-doubling bifurcation and intermittency routes.
基金funded by the NSFC Grant(52177213)supported through NSFC Committee of Chinathe foundation(2020A1414010346 and 2019622163008)supported through the Science and Technology Bureau of Guangdong Governmentsponsored by the Student Research Program(X202110561688)supported through South China University of Technology。
文摘As a promising cathode material for sodium ion batteries,honeycomb-ordered layered Na_(3)Ni_(2)Sb O_(6)still suffers from rapid capacity fading because of partially irreversible phase transition.Herein,a substitution of Na+by Rb+with a larger ionic radius in honeycomb layered Na_(3)-xRbxNi_(2)Sb O_(6)is proposed to modulate the interlayer structure.The results unveil that biphasic transition reversibility of the intermediate P′3phase is substantially enhanced,and the structure evolution behavior during the charge/discharge process changes due to the structural modulation,which contributes to a suppression of the unfavorable O_(1)phase and an alleviation of the lattice distortion.Moreover,Rb substituted samples exhibited an improved Na+(de)intercalation thermodynamics and kinetics.Attributed to the modifications,the sample with optimized Rb content delivers superior cycle stability and rate capacity,demonstrating a feasible strategy for suppressing irreversible phase transition and developing high-performance honeycomb layered materials for sodium ion batteries.
基金supported by the National Natural Science Foundation of China(22005164)the Natural Science Foundation of Shandong Province(BS2015CL002)the Basic Research Project of Qingdao Source Innovation Program Fund(17-1-1-82-jch)。
文摘To realize the continuous production of hydrogen energy,the efficient photocatalysts are required in the heterogeneous reaction for water splitting.Herein,we reported a surface modulation strategy,via doping oxygen atoms to tune the surface state of ZnIn_(2)S_(4)nanosheets with cocatalyst MoS_(2)modification,to enhance water adsorption and surface catalytic reaction for boosting the photocatalytic activity.Consequently,MoS_(2)/O-ZnIn_(2)S_(4)photocatalysts showed a remarkably superior photocatalytic H_(2)production performance of 4.002 mmol g^(-1)h^(-1)and an apparent quantum yield(AQY)of~2.53%,5.4 folds higher than ZnIn_(2)S_(4).Using operando infrared spectroscopy and DFT calculation,we revealed the dynamic structural evolution,as well as the active sites for water adsorption and the catalytic reaction at the MoS_(2)/O ZnIn_(2)S_(4)interface.This work reveals the effect of surface modulation on the photocatalytic activity for MoS_(2)/O-ZnIn_(2)S_(4)and offers a feasible method to devise excellent nanomaterial photocatalysts for H_(2)production.
基金Project supported by the National Basic Research Program of China (Grant No. 2007CB924901)Shanghai Leading Academic Discipline Project (Grant No. B411)+3 种基金National Natural Science Foundation of China (Grant No. 60906043)Shanghai Municipal Commission of Science and Technology Project (Grant Nos. 09ZR1409200 and 10ZR1409800)Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090076120010)the Fundamental Research Funds for the Central Universities (Grant No. 09ECNU)
文摘Based on our previous work, the influence of annealing conditions on impurity species in in-situ arsenic （As）- doped Hg1-xCdxTe （x ≈ 0.3） grown by molecular beam epitaxy has been systematically investigated by modulated photoluminescence spectra. The results show that （i） the doped-As acting as undesirable shallow/deep levels in asgrown can be optimized under proper annealing conditions and the physical mechanism of the disadvantage of high activation temperature, commonly assumed to be more favourable for As activation, has been discussed as compared with the reports in the As-implanted HgCdTe epilayers （x ≈ 0.39）, （ii） the density of VHg has an evident effect on the determination of bandgap （or composition） of epilayers and the excessive introduction of VHg will lead to a short-wavelength shift of epilayers, and （iii） the VHs prefers forming the VHg-ASHg complex when the inactivated-As （AsHg or related） coexists in a certain density, which makes it difficult to annihilate VHg in As-doped epilayers. As a result, the bandedge electronic structures of epilayers under different conditions have been drawn as a brief guideline for preparing extrinsic p-type epilayers or related devices.
基金supported by the Natural Science Foundation of Fujian Province (No. 2008J0146)
文摘The photoluminescence （PL） property effect of Sc3＋ on the Er3＋/Y3＋/Yb3＋ doped Al2O3 powders prepared by sol-gel method has been investigated. The X-ray diffraction （XRD） and transmission electron microscopy （TEM） implied that the distribution of dopants （Er3＋ , Y3＋ , Yb3＋ , Sc3＋） was improved effectively with the rise of Sc3＋ concentration. The Fourier transform infrared spectra （FTIR） results demonstrated that the ligand around the quenching center -OH and the population of -OH were altered by introducing different amounts of Sc3＋ . The PL intensity centered at 1530 nm was increasingly improved with the rise of Sc3＋ concentration, as well as the corresponding full widths at the half maximum （FWHM） and lifetime. The optimized PL intensity was 4.7 times higher than that non-Sc3＋ doped sample for the Al2O3 powders codoped with 10mol% Sc3＋ . This material can be promising candidates for optical fiber amplifier.
