The influence of positive bias temperature instability(PBTI)on 1/f noise performance is systematically investigated on n-channel fin field-effect transistor(FinFET).The FinFET with long and short channel(L=240 nm,16 n...The influence of positive bias temperature instability(PBTI)on 1/f noise performance is systematically investigated on n-channel fin field-effect transistor(FinFET).The FinFET with long and short channel(L=240 nm,16 nm respectively)is characterized under PBTI stress from 0 s to 104 s.The 1/f noise features are analyzed by using the unified physical model taking into account the contributions from the carrier number and channel mobility fluctuations.The I d-V g,I d-V d,I g-V g tests are conducted to support and verify the physical analysis in the PBTI process.It is found that the influence of the channel mobility fluctuations may not be neglected.Due to the mobility degradation in a short-channel device,the noise level of the short channel device also degrades.Trapping and trap generation regimes of PBTI occur in high-k layer and are identified based on the results obtained for the gate leakage current and 1/f noise.展开更多
Low-frequency noise behavior in the MOSFETs processed in 65 run technology is investigated in this paper.Low-frequency noise for NMOS transistors agrees with McWhorter＇s theory（carrier number fluctuation）,low-frequ...Low-frequency noise behavior in the MOSFETs processed in 65 run technology is investigated in this paper.Low-frequency noise for NMOS transistors agrees with McWhorter＇s theory（carrier number fluctuation）,low-frequency noise in the sub-threshold regime agrees with McWhorter＇s theory for PMOS transistors while it agree with Hooge＇s theory（carrier mobility fluctuation） in the channel strong inversion regime.According to carrier number fluctuation model,the extracted trap densities near the interface between channel and gate oxide for NMOS and PMOS transistor are 3.94×10^（17） and 3.56×10^（18） cm^（-3）/eV respectively.According to carrier mobility fluctuation model,the extracted average Hooge＇s parameters are 2.42×10^（-5） and 4×10^（-4）.By consideration of BSIM compact model,it is shown that two noise parameters（NOIA and NOIB） can model the intrinsic channel noise.The extracted NOIA and NOIB are constants for PMOS and their values are equal to 3.94×10^（17） cm^（-3）/eV and 9.31×10^（-4） V^（-1）.But for NMOS,NOIA is also a constant while NOIB is inversely proportional to the effective gate voltage.The extracted NOIA and NOIB for NMOS are equal to 3.56×10^（18） cm^（-3）/eV and 1.53×10^（-2） V^（-1）.Good agreement between simulation and experimental results is achieved.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61634008).
文摘The influence of positive bias temperature instability(PBTI)on 1/f noise performance is systematically investigated on n-channel fin field-effect transistor(FinFET).The FinFET with long and short channel(L=240 nm,16 nm respectively)is characterized under PBTI stress from 0 s to 104 s.The 1/f noise features are analyzed by using the unified physical model taking into account the contributions from the carrier number and channel mobility fluctuations.The I d-V g,I d-V d,I g-V g tests are conducted to support and verify the physical analysis in the PBTI process.It is found that the influence of the channel mobility fluctuations may not be neglected.Due to the mobility degradation in a short-channel device,the noise level of the short channel device also degrades.Trapping and trap generation regimes of PBTI occur in high-k layer and are identified based on the results obtained for the gate leakage current and 1/f noise.
基金supported by the National Natural Science Foundation of China(Nos.61574048,61204112)the Guangdong Natural Science Foundation(No.2014A030313656)
文摘Low-frequency noise behavior in the MOSFETs processed in 65 run technology is investigated in this paper.Low-frequency noise for NMOS transistors agrees with McWhorter＇s theory（carrier number fluctuation）,low-frequency noise in the sub-threshold regime agrees with McWhorter＇s theory for PMOS transistors while it agree with Hooge＇s theory（carrier mobility fluctuation） in the channel strong inversion regime.According to carrier number fluctuation model,the extracted trap densities near the interface between channel and gate oxide for NMOS and PMOS transistor are 3.94×10^（17） and 3.56×10^（18） cm^（-3）/eV respectively.According to carrier mobility fluctuation model,the extracted average Hooge＇s parameters are 2.42×10^（-5） and 4×10^（-4）.By consideration of BSIM compact model,it is shown that two noise parameters（NOIA and NOIB） can model the intrinsic channel noise.The extracted NOIA and NOIB are constants for PMOS and their values are equal to 3.94×10^（17） cm^（-3）/eV and 9.31×10^（-4） V^（-1）.But for NMOS,NOIA is also a constant while NOIB is inversely proportional to the effective gate voltage.The extracted NOIA and NOIB for NMOS are equal to 3.56×10^（18） cm^（-3）/eV and 1.53×10^（-2） V^（-1）.Good agreement between simulation and experimental results is achieved.
