The relationship between structure and hysteresis of phase transformation temperature in NiTi shape memory alloy has been investigated by means of TEM observation,positron an- nihilation and electrical resistivity mea...The relationship between structure and hysteresis of phase transformation temperature in NiTi shape memory alloy has been investigated by means of TEM observation,positron an- nihilation and electrical resistivity measurement.The sequence of hysteresis for the alloy aged under different regimes was found to be:plate martensite>R-phase>tie-like martensite. The reversible displaeement of phase boundaries of these transformations is blocked by the co- herent stress field around Ti_(11)Ni_(14)phase particles.A linear relationship between S paramet- er of positron annihilation and maximum values of temperature hysteresis showed that the mismatch dislocation and elastic stress field established by Ti_(11)Ni_(14)phase precipitation are the main factor to determine the temperature hysteresis of phase transformation in NiTi shape memory alloy.展开更多
Microstructure and misfit dislocation behavior in In_xGa_(1-x)As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition(LP-MOCVD) were analyzed by high resolution transmission elec...Microstructure and misfit dislocation behavior in In_xGa_(1-x)As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition(LP-MOCVD) were analyzed by high resolution transmission electron microscopy(HRTEM), scanning electron microscopy(SEM), atomic force microscopy(AFM), Raman spectroscopy and Hall effect measurements. To optimize the structure of In_(0.82)Ga_(0.18)As/InP heterostructure, the In_xGa_(1-x)As buffer layer was grown. The residual strain of the In_(0.82)Ga_(0.18)As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium(In) content In_(0.82)Ga_(0.18)As epitaxial layer has significant influence on the carrier concentration.展开更多
文摘The relationship between structure and hysteresis of phase transformation temperature in NiTi shape memory alloy has been investigated by means of TEM observation,positron an- nihilation and electrical resistivity measurement.The sequence of hysteresis for the alloy aged under different regimes was found to be:plate martensite>R-phase>tie-like martensite. The reversible displaeement of phase boundaries of these transformations is blocked by the co- herent stress field around Ti_(11)Ni_(14)phase particles.A linear relationship between S paramet- er of positron annihilation and maximum values of temperature hysteresis showed that the mismatch dislocation and elastic stress field established by Ti_(11)Ni_(14)phase precipitation are the main factor to determine the temperature hysteresis of phase transformation in NiTi shape memory alloy.
基金supported by the National Key Basic Research Program of China(No.2012CB619200)the National Natural Science Foundation of China(No.61474053)+1 种基金the State Key Laboratory for Mechanical Behavior of Materials of Xi'an Jiaotong University(No.20161806)the Natural Science Basic Research Open Foundation of the Key Lab of Automobile Materials,Ministry of Education,Jilin University(No.1018320144001)
文摘Microstructure and misfit dislocation behavior in In_xGa_(1-x)As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition(LP-MOCVD) were analyzed by high resolution transmission electron microscopy(HRTEM), scanning electron microscopy(SEM), atomic force microscopy(AFM), Raman spectroscopy and Hall effect measurements. To optimize the structure of In_(0.82)Ga_(0.18)As/InP heterostructure, the In_xGa_(1-x)As buffer layer was grown. The residual strain of the In_(0.82)Ga_(0.18)As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium(In) content In_(0.82)Ga_(0.18)As epitaxial layer has significant influence on the carrier concentration.
