The recent development of three-dimensional semiconductor integration technology demands a key component-the ovonic threshold switching(OTS)selector to suppress the current leakage in the high-density memory chips.Yet...The recent development of three-dimensional semiconductor integration technology demands a key component-the ovonic threshold switching(OTS)selector to suppress the current leakage in the high-density memory chips.Yet,the unsatisfactory performance of existing OTS materials becomes the bottleneck of the industrial advancement.The sluggish development of OTS materials,which are usually made from chalcogenide glass,should be largely attributed to the insufficient understanding of the electronic structure in these materials,despite of intensive research in the past decade.Due to the heavy first-principles computation on disordered systems,a universal theory to explain the origin of mid-gap states(MGS),which are the key feature leading to the OTS behavior,is still lacking.To avoid the formidable computational tasks,we adopt machine learning method to understand and predict MGS in typical OTS materials.We build hundreds of chalcogenide glass models and collect major structural features from both short-range order(SRO)and medium-range order(MRO)of the amorphous cells.After training the artificial neural network using these features,the accuracy has reached~95%when it recognizes MGS in new glass.By analyzing the synaptic weights of the input structural features,we discover that the bonding and coordination environments from SRO and particularly MRO are closely related to MGS.The trained model could be used in many other OTS chalcogenides after minor modification.The intelligent machine learning allows us to understand the OTS mechanism from vast amount of structural data without heavy computational tasks,providing a new strategy to design functional amorphous materials from first principles.展开更多
TiN gate thin-film fully-depleted SOI CMOS devices are fabricated and discussed.Key process technologies are demonstrated.Compared with the dual polysilicon gate devices,the channel doping concentration of nMOS and pM...TiN gate thin-film fully-depleted SOI CMOS devices are fabricated and discussed.Key process technologies are demonstrated.Compared with the dual polysilicon gate devices,the channel doping concentration of nMOS and pMOS can be reduced without changing threshold voltage (V T),which enhances the mobility.Symmetrical V T is achieved by nearly the same V T implant dose because of the near mid-gap workfunction of TiN gate.The SCE effect is improved when the thin-film thickness is reduced.展开更多
随着国际金融危机的爆发,巴塞尔协议Ⅲ应运而生,将流动性风险监管提到了与资本充足率同等高度。本文在国内外学者对流动性风险研究的基础上,基于巴塞尔协议DI审慎监管视角,结合新疆法人银行经营和资产负债表结构特点,分析流动性监管对...随着国际金融危机的爆发,巴塞尔协议Ⅲ应运而生,将流动性风险监管提到了与资本充足率同等高度。本文在国内外学者对流动性风险研究的基础上,基于巴塞尔协议DI审慎监管视角,结合新疆法人银行经营和资产负债表结构特点,分析流动性监管对新疆法人银行监管的有效性。参照Ryan and Hitoshi (2014)的模型,实证分析流动性监管对新疆法人银行资产结构和负债结构的影响,认为活期存款中的稳定存款与定期存款具有替代性,存贷款期限错配和资产规模增长对不同类型、不同阶段的银行机构的流动性影响不同,通过调控货币发行量可以有效调节地方法人银行业金融机构流动风险,资本充足率对地方法人银行业金融机构流动性具有显著影响。建议监管部门完善差别化监管指标体系,根据不同机构类型制定适合的监管指标平衡体系,通过监管约束引导银行业机构用好活期存款中的稳定部分,需适时进行宏观流动性的协调配合,实现流动性风险管理的平衡。展开更多
基金National Key R&D Plan of China(Grant No.2019YFB2205100,2017YFB0701700)National Science and Technology Major Project of China(Grant No.2017ZX02301007-002)+2 种基金National Natural Science Foundation of China(Grant No.62174060)Fundamental Research Funds for the Central Universities,HUST(No.2021GCRC051)Hubei Key Laboratory of Advanced Memories.
文摘The recent development of three-dimensional semiconductor integration technology demands a key component-the ovonic threshold switching(OTS)selector to suppress the current leakage in the high-density memory chips.Yet,the unsatisfactory performance of existing OTS materials becomes the bottleneck of the industrial advancement.The sluggish development of OTS materials,which are usually made from chalcogenide glass,should be largely attributed to the insufficient understanding of the electronic structure in these materials,despite of intensive research in the past decade.Due to the heavy first-principles computation on disordered systems,a universal theory to explain the origin of mid-gap states(MGS),which are the key feature leading to the OTS behavior,is still lacking.To avoid the formidable computational tasks,we adopt machine learning method to understand and predict MGS in typical OTS materials.We build hundreds of chalcogenide glass models and collect major structural features from both short-range order(SRO)and medium-range order(MRO)of the amorphous cells.After training the artificial neural network using these features,the accuracy has reached~95%when it recognizes MGS in new glass.By analyzing the synaptic weights of the input structural features,we discover that the bonding and coordination environments from SRO and particularly MRO are closely related to MGS.The trained model could be used in many other OTS chalcogenides after minor modification.The intelligent machine learning allows us to understand the OTS mechanism from vast amount of structural data without heavy computational tasks,providing a new strategy to design functional amorphous materials from first principles.
文摘TiN gate thin-film fully-depleted SOI CMOS devices are fabricated and discussed.Key process technologies are demonstrated.Compared with the dual polysilicon gate devices,the channel doping concentration of nMOS and pMOS can be reduced without changing threshold voltage (V T),which enhances the mobility.Symmetrical V T is achieved by nearly the same V T implant dose because of the near mid-gap workfunction of TiN gate.The SCE effect is improved when the thin-film thickness is reduced.
基金Supported by the National Natural Science Foundation of China(Nos.62075229 and 61775228)the International Science and Technology Cooperation Program of Shanghai(No.20520711200)。
文摘随着国际金融危机的爆发,巴塞尔协议Ⅲ应运而生,将流动性风险监管提到了与资本充足率同等高度。本文在国内外学者对流动性风险研究的基础上,基于巴塞尔协议DI审慎监管视角,结合新疆法人银行经营和资产负债表结构特点,分析流动性监管对新疆法人银行监管的有效性。参照Ryan and Hitoshi (2014)的模型,实证分析流动性监管对新疆法人银行资产结构和负债结构的影响,认为活期存款中的稳定存款与定期存款具有替代性,存贷款期限错配和资产规模增长对不同类型、不同阶段的银行机构的流动性影响不同,通过调控货币发行量可以有效调节地方法人银行业金融机构流动风险,资本充足率对地方法人银行业金融机构流动性具有显著影响。建议监管部门完善差别化监管指标体系,根据不同机构类型制定适合的监管指标平衡体系,通过监管约束引导银行业机构用好活期存款中的稳定部分,需适时进行宏观流动性的协调配合,实现流动性风险管理的平衡。
