The superior radiation tolerance of silicon-on-insulator(SOI)wafers makes them critical for next-generation integrated circuit and micro-electro-mechanical system electronics in space technology and nuclear energy,and...The superior radiation tolerance of silicon-on-insulator(SOI)wafers makes them critical for next-generation integrated circuit and micro-electro-mechanical system electronics in space technology and nuclear energy,and yet the inherently low thermal conductivity buried oxide layer severely impedes thermal management in SOI-based radio frequency/power devices.While diamond offers exceptional thermal conductivity to enhance heat dissipation,its significant thermomechanical mismatch with silicon poses major challenges to reliable hetero-integration.Here we demonstrate a novel silicon film-on-diamond(SOD)heterostructure using microtransfer printing(μTP)technology,with comparative analysis against surface activated bonded silicon-on-silicon carbide(SOC)and conventional SOI wafers.TheμTP-SOD samples exhibit near-zero residual stress(0.026 GPa)in the transferred Si layer and substantially reduced interfacial thermal resistance(ITR)compared to conventional SOI and SOC wafers.Integrated analysis of interfacial microstructures and molecular dynamics simulations reveals how interfacial structures and amorphous compositions govern the phonon thermal transport.Particularly,the amorphous SiO-SiC transition layer enhances phonon transmission at theμTP-SOD heterointerface to achieve a low ITR of 6.3+1.6/-1.5 m^(2)·K/GW.Finite element analysis verifies that these interfacial enhancements,combined with the diamond’s exceptional thermal conductivity,reduce the device junction-temperature rise by 66.7%relative to SOI devices at 15 W/mm output power.The low residual stress and reduced ITR ofμTP-SOD are expected to provide promising thermal management schemes for SOI-based electronics.展开更多
Deterministic assembly techniques that enable programmatic and massively parallel integration of chips are essential for the development of novel electronic systems such as micro LED displays.However,large-area integr...Deterministic assembly techniques that enable programmatic and massively parallel integration of chips are essential for the development of novel electronic systems such as micro LED displays.However,large-area integration of ultrathin micro-chips with high yield and transfer accuracy remains a great challenge due to the difficulties in selective transfer,adhesion switchability,and transfer deviation.Here,a“laser projection proximity transfer(Laser PPT)”technique is presented for the deterministic assembly of microchip arrays at scale.One of the remarkable features is that the transfer status between the chip and the receiver substrate evolves from the original non-contact mode to contact mode for high-precision transfer,which overcomes the strict requirements of the flatness of stamp and substrate in contact-style transfer,and flight deviation of microchip array in noncontact-style transfer.Another feature is the rapid modulation of interfacial adhesion for reliable transfer via the use of thermally expandable microspheres to form microstructures and combining with a laser-induced blister.The adhesion regulation range is over 20 times without any damage to chip arrays.The results show that the transfer accuracy has been improved substantially with a minimum relative error of~0.5%.Combined with a laser beam projection system,demonstrations of Laser PPT for selective assembly of fragile objects onto challenging non-adhesive/cured surfaces in batch illustrate its potential in the highprecision integration of microscale chips at scale.展开更多
基金supported by the National Key R&D Program of China(No.2023YFA1407001)the National Natural Science Foundation of China(Nos.11975125,12204472,and 62304232)+1 种基金the Guangdong Special Support Program(No.2021TQ06C953)the Open Research Fund of State Key Laboratory of Materials for Integrated Circuits(No.SKLIC-K2024-04).
文摘The superior radiation tolerance of silicon-on-insulator(SOI)wafers makes them critical for next-generation integrated circuit and micro-electro-mechanical system electronics in space technology and nuclear energy,and yet the inherently low thermal conductivity buried oxide layer severely impedes thermal management in SOI-based radio frequency/power devices.While diamond offers exceptional thermal conductivity to enhance heat dissipation,its significant thermomechanical mismatch with silicon poses major challenges to reliable hetero-integration.Here we demonstrate a novel silicon film-on-diamond(SOD)heterostructure using microtransfer printing(μTP)technology,with comparative analysis against surface activated bonded silicon-on-silicon carbide(SOC)and conventional SOI wafers.TheμTP-SOD samples exhibit near-zero residual stress(0.026 GPa)in the transferred Si layer and substantially reduced interfacial thermal resistance(ITR)compared to conventional SOI and SOC wafers.Integrated analysis of interfacial microstructures and molecular dynamics simulations reveals how interfacial structures and amorphous compositions govern the phonon thermal transport.Particularly,the amorphous SiO-SiC transition layer enhances phonon transmission at theμTP-SOD heterointerface to achieve a low ITR of 6.3+1.6/-1.5 m^(2)·K/GW.Finite element analysis verifies that these interfacial enhancements,combined with the diamond’s exceptional thermal conductivity,reduce the device junction-temperature rise by 66.7%relative to SOI devices at 15 W/mm output power.The low residual stress and reduced ITR ofμTP-SOD are expected to provide promising thermal management schemes for SOI-based electronics.
基金supported by the National Natural Science Foundation of China(Grant Nos.51925503,52188102,and 52105576)the Natural Science Foundation of Hubei Province of China(Grant No.2020CFA028)。
文摘Deterministic assembly techniques that enable programmatic and massively parallel integration of chips are essential for the development of novel electronic systems such as micro LED displays.However,large-area integration of ultrathin micro-chips with high yield and transfer accuracy remains a great challenge due to the difficulties in selective transfer,adhesion switchability,and transfer deviation.Here,a“laser projection proximity transfer(Laser PPT)”technique is presented for the deterministic assembly of microchip arrays at scale.One of the remarkable features is that the transfer status between the chip and the receiver substrate evolves from the original non-contact mode to contact mode for high-precision transfer,which overcomes the strict requirements of the flatness of stamp and substrate in contact-style transfer,and flight deviation of microchip array in noncontact-style transfer.Another feature is the rapid modulation of interfacial adhesion for reliable transfer via the use of thermally expandable microspheres to form microstructures and combining with a laser-induced blister.The adhesion regulation range is over 20 times without any damage to chip arrays.The results show that the transfer accuracy has been improved substantially with a minimum relative error of~0.5%.Combined with a laser beam projection system,demonstrations of Laser PPT for selective assembly of fragile objects onto challenging non-adhesive/cured surfaces in batch illustrate its potential in the highprecision integration of microscale chips at scale.
