The properties of BaO/MgO-type interface in the BaZrO3/MgO(001) heterostructure are studied by aberrationcorrected high-resolution transmission electron microscopy combined with first-principles calculations.Experimen...The properties of BaO/MgO-type interface in the BaZrO3/MgO(001) heterostructure are studied by aberrationcorrected high-resolution transmission electron microscopy combined with first-principles calculations.Experimental evidence demonstrates that cation displacement and vacancies occur at the interface. Our firstprinciple calculations show that cation displacement results from the electrostatic potential effect at the interface,and cation vacancies could lower the interfacial work of separation and enhance the interfacial stability of BaO/MgO-type interface. The results highlight that the effect of interfacial defects should be taken into account in understanding the film growth kinetics and properties in oxide heteroepitaxy.展开更多
Thin films of nanostructured α-FeOwith thickness of 1 56,203 and 251 nm were deposited by successive ionic layer adsorption and reaction(SILAR) method onto glass substrates using FeCl-6HO and NaOH as cationic and ani...Thin films of nanostructured α-FeOwith thickness of 1 56,203 and 251 nm were deposited by successive ionic layer adsorption and reaction(SILAR) method onto glass substrates using FeCl-6HO and NaOH as cationic and anionic precursors.The X-ray diffraction studies revealed that,α-FeOthin films are nanocrystalline in nature with rhombohedral structure.The morphological properties were investigated by field emission scanning electron and atomic force microscopy.The optical studies showed that α-FeOexhibits direct as well as indirect optical band gap energy.The electrical resistivity of α-FeOat 305 K decreases from 11.76×102 to9.46 × 10~2 Ω cm as film thickness increases from 156 to 251 nm.The thermo-emf measurements confirmed that α-FeOexhibits n-type conductivity.The nanocrystalline α-FeOexhibits antibacterial character against Staphylococcus aureus and its efficiency increases from 37.50%to 87.50%depending on crystallite size.展开更多
基金supported by the Hundred Talents Project of Chinese Academy of Sciencesthe National Basic Research Program of China (No.2009CB623705)the National Natural Science Foundation of China (Nos.51471169 and 51390472)
文摘The properties of BaO/MgO-type interface in the BaZrO3/MgO(001) heterostructure are studied by aberrationcorrected high-resolution transmission electron microscopy combined with first-principles calculations.Experimental evidence demonstrates that cation displacement and vacancies occur at the interface. Our firstprinciple calculations show that cation displacement results from the electrostatic potential effect at the interface,and cation vacancies could lower the interfacial work of separation and enhance the interfacial stability of BaO/MgO-type interface. The results highlight that the effect of interfacial defects should be taken into account in understanding the film growth kinetics and properties in oxide heteroepitaxy.
基金University Grants Commission, New Delhi (India), for financial support under the project
文摘Thin films of nanostructured α-FeOwith thickness of 1 56,203 and 251 nm were deposited by successive ionic layer adsorption and reaction(SILAR) method onto glass substrates using FeCl-6HO and NaOH as cationic and anionic precursors.The X-ray diffraction studies revealed that,α-FeOthin films are nanocrystalline in nature with rhombohedral structure.The morphological properties were investigated by field emission scanning electron and atomic force microscopy.The optical studies showed that α-FeOexhibits direct as well as indirect optical band gap energy.The electrical resistivity of α-FeOat 305 K decreases from 11.76×102 to9.46 × 10~2 Ω cm as film thickness increases from 156 to 251 nm.The thermo-emf measurements confirmed that α-FeOexhibits n-type conductivity.The nanocrystalline α-FeOexhibits antibacterial character against Staphylococcus aureus and its efficiency increases from 37.50%to 87.50%depending on crystallite size.
