β-Ga_(2)O_(3)以其较高的导带底(Conduction Band Minimum,CBM)和较低的价带顶(Valence Band Maximum,VBM),赋予其光生电子和空穴较强的还原与氧化能力,但其宽禁带和高载流子复合率限制了在光催化中的应用.金属离子掺杂被认为是提升光...β-Ga_(2)O_(3)以其较高的导带底(Conduction Band Minimum,CBM)和较低的价带顶(Valence Band Maximum,VBM),赋予其光生电子和空穴较强的还原与氧化能力,但其宽禁带和高载流子复合率限制了在光催化中的应用.金属离子掺杂被认为是提升光催化性能的有效途径.本文基于第一性原理系统研究了Sr、Ba、V、Nb、Ta等二十种元素掺杂对β-Ga_(2)O_(3)光催化性能的影响,研究发现:Sr、Nb、Ta、Mn、Fe、Zn、Hg七种元素掺杂β-Ga_(2)O_(3)后,材料除能保持合适的带边位置外,还具有更高的电子空穴分离效率以及更低的形成能,表明这些元素的引入可有效提升β-Ga_(2)O_(3)光催化效率;Nb、Ta掺杂可显著增强材料在红外光区的吸收,Mn、Fe掺杂则显著提升材料在紫外和可见光区的吸收能力,其中,Nb在0.5 eV处光吸收系数高达1.38×10^(5)cm^(−1),Mn、Fe掺杂在3 eV处光吸收系数可达1×10^(5)cm^(−1),在不同波段均呈现出良好的光吸收能力.此外,Hg掺杂表现出跨红外至深紫外的宽波段增强效果,Hg掺杂后,电子空穴相对有效质量高达109,说明Hg掺杂显著提升载流子分离能力,同时由于其在宽波段显著增强的光吸收效果,因此,Hg可作为β-Ga_(2)O_(3)在光催化制氢中理想的金属掺杂元素,以上研究结果为β-Ga_(2)O_(3)光催化分解水制氢研究提供了价值参考.展开更多
The rapid recombination of photogenerated carriers poses a significant limitation on the use of CdS quantum dots(QDs)in photocatalysis.Herein,the construction of a novel S-scheme heterojunction between cubic-phase CdS...The rapid recombination of photogenerated carriers poses a significant limitation on the use of CdS quantum dots(QDs)in photocatalysis.Herein,the construction of a novel S-scheme heterojunction between cubic-phase CdS QDs and hollow nanotube In_(2)O_(3)is successfully achieved using an electrostatic self-assembly method.Under visible light irradiation,all CdS-In_(2)O_(3)composites exhibit higher hydrogen evolution efficiency compared to pure CdS QDs.Notably,the photocatalytic H_(2)evolution rate of the optimal CdS-7%In_(2)O_(3)composite is determined to be 2258.59μmol g^(−1)h^(−1),approximately 12.3 times higher than that of pure CdS.The cyclic test indicates that the CdS-In_(2)O_(3)composite maintains considerable activity even after 5 cycles,indicating its excellent stability.In situ X-ray photoelectron spectroscopy and density functional theory calculations confirm that carrier migration in CdS-In_(2)O_(3)composites adheres to a typical S-scheme heterojunction mechanism.Additionally,a series of characterizations demonstrate that the formation of S-scheme heterojunctions between In_(2)O_(3)and CdS inhibits charge recombination and accelerates the separation and migration of photogenerated carriers in the CdS QDs,thus achieving enhanced photocatalytic performance.This work elucidates the pivotal role of S-scheme heterojunctions in photocatalytic H_(2)production and offers novel insights into the construction of effective composite photocatalysts.展开更多
文摘β-Ga_(2)O_(3)以其较高的导带底(Conduction Band Minimum,CBM)和较低的价带顶(Valence Band Maximum,VBM),赋予其光生电子和空穴较强的还原与氧化能力,但其宽禁带和高载流子复合率限制了在光催化中的应用.金属离子掺杂被认为是提升光催化性能的有效途径.本文基于第一性原理系统研究了Sr、Ba、V、Nb、Ta等二十种元素掺杂对β-Ga_(2)O_(3)光催化性能的影响,研究发现:Sr、Nb、Ta、Mn、Fe、Zn、Hg七种元素掺杂β-Ga_(2)O_(3)后,材料除能保持合适的带边位置外,还具有更高的电子空穴分离效率以及更低的形成能,表明这些元素的引入可有效提升β-Ga_(2)O_(3)光催化效率;Nb、Ta掺杂可显著增强材料在红外光区的吸收,Mn、Fe掺杂则显著提升材料在紫外和可见光区的吸收能力,其中,Nb在0.5 eV处光吸收系数高达1.38×10^(5)cm^(−1),Mn、Fe掺杂在3 eV处光吸收系数可达1×10^(5)cm^(−1),在不同波段均呈现出良好的光吸收能力.此外,Hg掺杂表现出跨红外至深紫外的宽波段增强效果,Hg掺杂后,电子空穴相对有效质量高达109,说明Hg掺杂显著提升载流子分离能力,同时由于其在宽波段显著增强的光吸收效果,因此,Hg可作为β-Ga_(2)O_(3)在光催化制氢中理想的金属掺杂元素,以上研究结果为β-Ga_(2)O_(3)光催化分解水制氢研究提供了价值参考.
文摘The rapid recombination of photogenerated carriers poses a significant limitation on the use of CdS quantum dots(QDs)in photocatalysis.Herein,the construction of a novel S-scheme heterojunction between cubic-phase CdS QDs and hollow nanotube In_(2)O_(3)is successfully achieved using an electrostatic self-assembly method.Under visible light irradiation,all CdS-In_(2)O_(3)composites exhibit higher hydrogen evolution efficiency compared to pure CdS QDs.Notably,the photocatalytic H_(2)evolution rate of the optimal CdS-7%In_(2)O_(3)composite is determined to be 2258.59μmol g^(−1)h^(−1),approximately 12.3 times higher than that of pure CdS.The cyclic test indicates that the CdS-In_(2)O_(3)composite maintains considerable activity even after 5 cycles,indicating its excellent stability.In situ X-ray photoelectron spectroscopy and density functional theory calculations confirm that carrier migration in CdS-In_(2)O_(3)composites adheres to a typical S-scheme heterojunction mechanism.Additionally,a series of characterizations demonstrate that the formation of S-scheme heterojunctions between In_(2)O_(3)and CdS inhibits charge recombination and accelerates the separation and migration of photogenerated carriers in the CdS QDs,thus achieving enhanced photocatalytic performance.This work elucidates the pivotal role of S-scheme heterojunctions in photocatalytic H_(2)production and offers novel insights into the construction of effective composite photocatalysts.
