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Full-color micro-LED displays based on quantum dot color converters
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作者 Yingqi Zeng Wenzhuo Qian +6 位作者 Rui Long Xiang Zhang Fuqiang Ma Jiajun Luo Linyuan Lian Daoli Zhang Jianbing Zhang 《Nano Research》 2025年第6期947-962,共16页
Micro-light-emitting diodes(micro-LEDs)have emerged as a promising display technology featuring high resolution,wide color gamut,high contrast,flexibility,and long lifetime.However,there are severe challenges in full-... Micro-light-emitting diodes(micro-LEDs)have emerged as a promising display technology featuring high resolution,wide color gamut,high contrast,flexibility,and long lifetime.However,there are severe challenges in full-color micro-LED,such as low efficiencies of red and green micro-LEDs,complex driving circuits for three-color micro-LEDs,and challenging mass transfer.Thus,converting blue light into red and green light by coupling color converters with blue LEDs is a reasonable strategy.Colloidal quantum dots(QDs)are an optimal candidate for color converters due to their high photoluminescence quantum yield,narrow emission peaks,small particle sizes,and solution processibility.Therefore,fullcolor micro-LEDs based on quantum dot color converters are attracting increasing attention.This review introduces micro-LED technology and the research progress of the full-color realization,and describes the associated technical challenges.Furthermore,it outlines the properties of QDs,patterning techniques,integration with micro-LEDs for achieving full color,and finally analyzes the challenges of applying QDs to micro-LEDs,demonstrating the application potential of QDs in achieving full-color of micro-LEDs,along with prospects for addressing current challenges. 展开更多
关键词 micro-light-emitting diode(micro-LED) quantum dot patterning technology FULL-COLOR color converter
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Reversible and controllable threshold voltage modulation for n-channel MoS2 and p-channel MoTe_(2 )field-effect transistors via multiple counter doping with ODTS/poly-L-lysine charge enhancers 被引量:2
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作者 Seung Gi Seo Jinheon Jeong +2 位作者 Seung Yeob Kim Ajit Kumar Sung Hun Jin 《Nano Research》 SCIE EI CSCD 2021年第9期3214-3227,共14页
Confronted by the inherent physical limitations in scaling down Si technology,transition metal dichalcogenides(TMDCs)as alternatives are being tremendously researched and paid attention to.However,mature counter dopin... Confronted by the inherent physical limitations in scaling down Si technology,transition metal dichalcogenides(TMDCs)as alternatives are being tremendously researched and paid attention to.However,mature counter doping technology for TMDCs is still elusive,and thus,a controllable and reversible charge enhancer is adopted for acceptor(or donor)-like doping via octadecyltrichlorosilane(ODTS)(or poly-L-lysine(PLL))treatment.Furthermore,multiple counter doping for TMDC field-effect transistors(FETs),combined with a threshold voltage(V;h)freezing scheme,renders the V_(th) modulation controllable,with negligible degradation and decent sustainability of FETs even after each treatment of a representative charge enhancer.In parallel,the counter doping mechanism is systematically investigated via photoluminescence spectroscopy,X-ray photoelectron spectroscopy,atomic force microscopy(AFM),surface energy characterization,and measurement of optoelectronic properties under illumination with light of various wavelengths.More impressively,complementary inverters,composed of type-converted molybdenum ditelluride(MoTe_(2)>FETs and hetero-TMDC FETs in enhancement mode,are demonstrated via respective ODTS/PLL treatments.Herein,driving backplane application for micro-light-emitting diode(p-LED)displays and physical validation of a corresponding counter doping scheme even for flexible polyethylene terephthalate(PET)substrates could be leveraged to relieve daunting challenges in the application of nanoscale Si-based three-dimensional(3D)stacked systems,with potential adoption of ultralow power and monolithic optical interconnection technology. 展开更多
关键词 transition metal dichalcogenides(TMDCs) counter doping charge enhancer field-effect transistors micro-light-emitting diode(m-LED)
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