Constructing heterostructures could endow materials with exceptional properties in gas sensing applications owing to boosted interfacial charge transfer.The rational design and controllable synthesis of heterostructur...Constructing heterostructures could endow materials with exceptional properties in gas sensing applications owing to boosted interfacial charge transfer.The rational design and controllable synthesis of heterostructures with a high-quality interface,however,still remains a challenge.Herein,novel Sn atom cosharing SnO_(2)/SnSe_(2) heterostructures with an intimate-contact interface and tunable composition were fabricated via a facile in situ oxidation method.An efficient increase in charge transfer can be achieved at the heterointerface through density functional theory calculations.The gas sensor based on SnO_(2)/SnSe_(2) exhibited an ultrahigh response toward 10 ppm H_(2)S at room temperature (resistance ratio = 32),roughly 4.5 and 16 times higher than that of pure SnO_(2) and SnSe_(2),respectively.Moreover,the sensor exhibited an ultralow detection limit of 10 ppb,superior sensing selectivity,and reliable long-term stability.This enhancement is primarily attributed to the numerous n–n heterojunctions,the boosted interfacial charge transfer,and the increased active sites of SnO_(2)/SnSe_(2) heterostructures.The obtained results prove that SnO_(2)/SnSe_(2) is a promising candidate material for room-temperature H_(2)S gas sensing and offer guidance for rational material design to develop heterostructure-based sensors.展开更多
基金supported by The National Key Research and Development Program of China(2019YFA0705200)the National Natural Science Foundation of China(No.52072093,51802058,and 11504040)+1 种基金the Applied Technology Research and Development Program of Heilongjiang Province(No.GY2018ZB0046)the China Postdoctoral Science Foundation funded project.
文摘Constructing heterostructures could endow materials with exceptional properties in gas sensing applications owing to boosted interfacial charge transfer.The rational design and controllable synthesis of heterostructures with a high-quality interface,however,still remains a challenge.Herein,novel Sn atom cosharing SnO_(2)/SnSe_(2) heterostructures with an intimate-contact interface and tunable composition were fabricated via a facile in situ oxidation method.An efficient increase in charge transfer can be achieved at the heterointerface through density functional theory calculations.The gas sensor based on SnO_(2)/SnSe_(2) exhibited an ultrahigh response toward 10 ppm H_(2)S at room temperature (resistance ratio = 32),roughly 4.5 and 16 times higher than that of pure SnO_(2) and SnSe_(2),respectively.Moreover,the sensor exhibited an ultralow detection limit of 10 ppb,superior sensing selectivity,and reliable long-term stability.This enhancement is primarily attributed to the numerous n–n heterojunctions,the boosted interfacial charge transfer,and the increased active sites of SnO_(2)/SnSe_(2) heterostructures.The obtained results prove that SnO_(2)/SnSe_(2) is a promising candidate material for room-temperature H_(2)S gas sensing and offer guidance for rational material design to develop heterostructure-based sensors.
