Learning and memory are fundamental brain functions affected by dietary and environmental factors. Magnesium is essential for maintaining normal body and brain functions. Here,
Recently,there is a surge of research interest in configurable ferroelectric conductive domain walls which have been considered as possible fundamental building blocks for future electronic devices.In this work,by usi...Recently,there is a surge of research interest in configurable ferroelectric conductive domain walls which have been considered as possible fundamental building blocks for future electronic devices.In this work,by using piezoresponse force microscopy and conductive atomic force microscopy,we demonstrated the controlled manipulation of various conductive domain walls in epitaxial BiFeO_(3) thin films,e.g.neutral domain walls(NDW)and charged domain walls(CDWs).More interestingly,a specific type of nanoscale domains was also identified,which are surrounded by highly conductive circular CWDs.Similar nano-scale domains can also be controlled created and erasured by applying local field via conductive probe,which allow nondestructive current readout of different domain states with a large on/off resistance ratio up to 102.The results indicate the potential to design and develop high-density non-volatile ferroelectric memories by utilizing these programable conductive nanoscale domain walls.展开更多
文摘Learning and memory are fundamental brain functions affected by dietary and environmental factors. Magnesium is essential for maintaining normal body and brain functions. Here,
基金The authors would like to acknowledge the financial support from the National Key Research and Development Programs of China(Grant Nos.2016YFA0201002,2016YFA0300101)the Na-tional Natural Science Foundation of China(Grant Nos.11674108,51272078,52002134)+4 种基金he Science and Technology Program of Guangzhou(No.2019050001)the project for Basic and Applied Basic research Foundation of Guangdong Province(No.2019A1515110707)the Natural Science Foundation of Guang-dong Province(No.2016A030308019)the Science and Technology Planning Project of Guangdong Province(No.2019KQNCX028)the Natural Science Foundation of South China Normal University(No.19KJ01).
文摘Recently,there is a surge of research interest in configurable ferroelectric conductive domain walls which have been considered as possible fundamental building blocks for future electronic devices.In this work,by using piezoresponse force microscopy and conductive atomic force microscopy,we demonstrated the controlled manipulation of various conductive domain walls in epitaxial BiFeO_(3) thin films,e.g.neutral domain walls(NDW)and charged domain walls(CDWs).More interestingly,a specific type of nanoscale domains was also identified,which are surrounded by highly conductive circular CWDs.Similar nano-scale domains can also be controlled created and erasured by applying local field via conductive probe,which allow nondestructive current readout of different domain states with a large on/off resistance ratio up to 102.The results indicate the potential to design and develop high-density non-volatile ferroelectric memories by utilizing these programable conductive nanoscale domain walls.
