In recent years,co-doping has gained widespread attention with the advantages of higher solubility,more carrier concentration,etc.Although more impurity energy levels will be introduced by co-doping,this can be in fav...In recent years,co-doping has gained widespread attention with the advantages of higher solubility,more carrier concentration,etc.Although more impurity energy levels will be introduced by co-doping,this can be in favor of appropriate application in the memory-effect device instead.Herein,the In and Sn co-doped gallium oxide(InSn-Ga_(2)O_(3))film has been successfully grown on sapphire substrates using plasma-enhanced chemical vapor deposition technology.Compared with pure Ga_(2)O_(3),InSn-Ga_(2)O_(3)exhibits a significantly increased carrier concentration and numerous defects,and thus results in a slow carrier recombination process and a prolonged recovery time after illumination,which endows InSn-Ga_(2)O_(3)with a certain memory function.Moreover,the first-principles calculation is utilized to analyze band structure evolution after the In and Sn co-doping,indicating the positive impact of multiple shallow impurity energy levels on improving conductivity and extending the recombination time of the photo-generated carriers in the InSn-Ga_(2)O_(3)device.In all,this work demonstrates superior memory characteristics of Ga_(2)O_(3)after co-doping operation and expands the potential applications of Ga_(2)O_(3)in optoelectronic synapses and image storage devices.展开更多
The nonlinear resistance characteristics of microcavity dielectric barrier discharge are mainly studied in the paper. A simulation model of microcavity dielectric barrier discharge is herein built to study the relatio...The nonlinear resistance characteristics of microcavity dielectric barrier discharge are mainly studied in the paper. A simulation model of microcavity dielectric barrier discharge is herein built to study the relationship between voltage and current in the process of discharge, and thus its I–V characteristic curve can be obtained. The I–V characteristics of the memristor are analyzed and compared with the I–V characteristics of the dielectric barrier discharge; it can be found that the I–V characteristics of the microcavity dielectric barrier discharge are similar to the characteristics of the memristor by analyzing them. The memory characteristics of microcavity dielectric barrier discharge are further analyzed.展开更多
The effect of thermal cycling and aging in martensitic state in Ti-Pd-Ni alloys were investigated by DSC and TEM observations. It is shown that the thermal cycling causes the decreases in M, and Af temperatures in Ti5...The effect of thermal cycling and aging in martensitic state in Ti-Pd-Ni alloys were investigated by DSC and TEM observations. It is shown that the thermal cycling causes the decreases in M, and Af temperatures in Ti50Pd50-xNix (x=10, 20, 30) alloys, but no obvious thermal cycling effect was observed in Ti50Pd50Pd40Ni10 alloys and the aging effect shows a curious feature, i.e., the Af temperature does not saturate even after relatively long time aging, which is considered to be due to the occurrence of recovery recrystallization during aging.展开更多
A novel high-κ~ A1203/HfO2/AI203 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibit...A novel high-κ~ A1203/HfO2/AI203 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibits excellent program-erasable characteristics. A large memory window of ~4 V, a small leakage current density of ~2 ×10-6 Acre-2 at a gate voltage of 7V, a high charge trapping density of 1.42 × 1013 cm-2 at a working vo]tage of 4-10 V and good retention characteristics are observed. Furthermore, the programming （△ VFB = 2.8 V at 10 V for 10μs） and erasing speeds （△VFB =-1.7 V at -10 V for 10μs） of the fabricated capacitor based on SiGe substrates are significantly improved as compared with counterparts reported earlier. It is concluded that the high-κ Al2O3/HfO2/Al2O3 nanolaminate charge trapping capacitor structure based on SiGe substrates is a promising candidate for future nano-scaled nonvolatile flash memory applications.展开更多
We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure（named as MONOS）, utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent pr...We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure（named as MONOS）, utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent programerasable characteristics attributed to the fact that more carriers are generated by the smaller bandgap of Si Ge during program/erase operations. A flat-band voltage shift 2.8 V can be obtained by programming at ＋11 V for 100 us. Meanwhile, the memory device exhibits a large memory window of ~7.17 V under ±12 V sweeping voltage, and a negligible charge loss of 18% after 104 s＇ retention. In addition, the leakage current density is lower than 2.52 × 10^（-7） A·cm^（-2） below a gate breakdown voltage of 12.5 V. Investigation of leakage current-voltage indicates that the Schottky emission is the predominant conduction mechanisms for leakage current. These desirable characteristics are ascribed to the higher trap density of the Si_3N_4 charge trapping layer and the better quality of the interface between the SiO_2 tunneling layer and the Si Ge buried channel. Therefore, the application of the Si Ge buried channel is very promising to construct 3 D charge trapping NAND flash devices with improved operation characteristics.展开更多
The geographical environment of the Zhaozhou Basin provides diverse possibilities for the formation and evolution of vernacular settlements and architectural spaces within multi-ethnic communities.Taking the vernacula...The geographical environment of the Zhaozhou Basin provides diverse possibilities for the formation and evolution of vernacular settlements and architectural spaces within multi-ethnic communities.Taking the vernacular settlements and architecture of the Zhaozhou Basin as a case study,this research adopts the anthropological concept of the“Bazi Society”as an analytical framework,and integrates the methodology of“social memory”to explore the social mechanisms that shape regional architectural space.By utilizing the“social memory”research approach,this study integrates GIS image analysis,social memory indicator surveys,oral interviews,and local historical materials from the Ming and Qing Dynasties,including local chronicles,historical maps,and illustrations,along with data from the Republican era,to conduct an in-depth investigation of typical settlements in the Zhaozhou Basin.This study proposes a“rule of in-depth memory depiction”,which is structured around three elements:the research objects(settlement spaces,public temples,and vernacular dwellings),the analytical dimensions(spatial patterns,cultural practices,and collective memory),and the narrative methods(oral testimony,schematic mapping,and quantitative indicators),thereby providing a clear framework for its application.It analyzes the feasibility of the research pathway for the“Bazi Society of basins”.The results can be summarized in three points.(1)Based on field investigation and GIS-historical triangulation,151 valid questionnaires yielded five principal memory factors(communalities>0.8;cumulative variance contribution rate 85.66%),thus verifying the operational feasibility and quantitative validity of the“Thick Description of Memory”framework.(2)Settlements in the Zhaozhou Basin exhibit a significant“landform-function-memory coupling pattern”,which reveals the continuous reconstruction of power structures and spatial forms within the processes of social memory.(3)Despite their functional transformations,public temples continue to serve as the spiritual cores of communities and as explicit carriers of collective memory,so they reflect the material continuity of productive and everyday life memories.Overall,this study demonstrates that“social memory functions as a key mediating mechanism”linking geographical environment,social practice,and vernacular architectural space,which provides new theoretical and methodological support for understanding the evolutionary logic of basin settlements and for guiding cultural heritage renewal.展开更多
Nano-floating gate memory devices with ZnO nano-crystals as charge storage layers are fabricated,and the influence of post-deposition annealing temperature and thickness of the ZnO layer are investigated.Atomic force ...Nano-floating gate memory devices with ZnO nano-crystals as charge storage layers are fabricated,and the influence of post-deposition annealing temperature and thickness of the ZnO layer are investigated.Atomic force microscopy and scanning electron microscopy reveal the morphology of discrete ZnO nano-crystals.For capacitance-voltage measurements,it is found that the memory device with 1.5 nm ZnO and annealed at 700℃shows a larger memory window of 4.3 V（at±6 V）and better retention characteristics than memoriy devices with2.5 nm ZnO or annealed at other temperatures.These results indicate that the nano-floating gate memory with ZnO nano-crystals can obtain good trade-off memory properties.展开更多
Cu/HfOx/n^＋Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching （RS） characteristics of HfOx films, in terms of swit...Cu/HfOx/n^＋Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching （RS） characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects （oxygen vacancies） in the film. The sample with thickness of 2Onto and Ar/O2 ratio of 12：3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.展开更多
： Metal-oxide-nitride-oxide-silicon （MONOS） capacitors with thermally grown SiO2 as the tunnel layer are fabricated, and the effects of different ambient nitridation （NH3, NO and N20） on the characteristics of th...： Metal-oxide-nitride-oxide-silicon （MONOS） capacitors with thermally grown SiO2 as the tunnel layer are fabricated, and the effects of different ambient nitridation （NH3, NO and N20） on the characteristics of the memory capacitors are investigated. The experimental results indicate that the device with tunnel oxide annealed in NO ambient exhibits excellent memory characteristics, i.e. a large memory window, high program/erase speed, and good endurance and retention performance （the charge loss rate is 14.5% after l0 years）. The mechanism involved is that much more nitrogen is incorporated into the tunnel oxide during NO annealing, resulting in a lower tunneling barrier height and smaller interface state density. Thus, there is a higher tunneling rate under a high electric field and a lower probability of trap-assisted tunneling during retention, as compared to N20 annealing. Furthermore, compared with the NH3-annealed device, no weak Si-H bonds and electron traps related to the hydrogen are introduced for the NO-annealed devices, giving a high-quality and high-reliability SiON tunneling layer and SiON/Si interface due to the suitable nitridation and oxidation roles of NO. Key words： MONOS memory; memory characteristics; annealing; nitridation展开更多
基金supported by the Joints Fund of the National Natural Science Foundation of China(Grant No.U23A20349)the Young Scientists Fund of the National Natural Science Foundation of China(Grant Nos.62204126,62305171,12104128,and 52402147)+3 种基金the Natural Science Foundation of Jiangsu Province(Grant Nos.BK20230361 and BK20241464)the Natural Science Foundation of Jiangsu Higher Education Institutions(Grant No.23KJB510017)the Jiangsu Provincial Team of Innovation and Entrepreneurship(Grant No.JSSCTD202351)the Postdoctoral Fellowship Program of CPSF(Grant No.GZC20233500)。
文摘In recent years,co-doping has gained widespread attention with the advantages of higher solubility,more carrier concentration,etc.Although more impurity energy levels will be introduced by co-doping,this can be in favor of appropriate application in the memory-effect device instead.Herein,the In and Sn co-doped gallium oxide(InSn-Ga_(2)O_(3))film has been successfully grown on sapphire substrates using plasma-enhanced chemical vapor deposition technology.Compared with pure Ga_(2)O_(3),InSn-Ga_(2)O_(3)exhibits a significantly increased carrier concentration and numerous defects,and thus results in a slow carrier recombination process and a prolonged recovery time after illumination,which endows InSn-Ga_(2)O_(3)with a certain memory function.Moreover,the first-principles calculation is utilized to analyze band structure evolution after the In and Sn co-doping,indicating the positive impact of multiple shallow impurity energy levels on improving conductivity and extending the recombination time of the photo-generated carriers in the InSn-Ga_(2)O_(3)device.In all,this work demonstrates superior memory characteristics of Ga_(2)O_(3)after co-doping operation and expands the potential applications of Ga_(2)O_(3)in optoelectronic synapses and image storage devices.
基金Project supported by the National Natural Science Foundation of China(Nos.U1204506,11405044)
文摘The nonlinear resistance characteristics of microcavity dielectric barrier discharge are mainly studied in the paper. A simulation model of microcavity dielectric barrier discharge is herein built to study the relationship between voltage and current in the process of discharge, and thus its I–V characteristic curve can be obtained. The I–V characteristics of the memristor are analyzed and compared with the I–V characteristics of the dielectric barrier discharge; it can be found that the I–V characteristics of the microcavity dielectric barrier discharge are similar to the characteristics of the memristor by analyzing them. The memory characteristics of microcavity dielectric barrier discharge are further analyzed.
基金This work was supported by a Grant-in-Aid fOrEncouragement of Young Scientists (W.C.) (l998-1999) from the Ministry of Educat
文摘The effect of thermal cycling and aging in martensitic state in Ti-Pd-Ni alloys were investigated by DSC and TEM observations. It is shown that the thermal cycling causes the decreases in M, and Af temperatures in Ti50Pd50-xNix (x=10, 20, 30) alloys, but no obvious thermal cycling effect was observed in Ti50Pd50Pd40Ni10 alloys and the aging effect shows a curious feature, i.e., the Af temperature does not saturate even after relatively long time aging, which is considered to be due to the occurrence of recovery recrystallization during aging.
基金Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02303007the National Key Research and Development Program of China under Grant No 2016YFA0301701the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2016112
文摘A novel high-κ~ A1203/HfO2/AI203 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibits excellent program-erasable characteristics. A large memory window of ~4 V, a small leakage current density of ~2 ×10-6 Acre-2 at a gate voltage of 7V, a high charge trapping density of 1.42 × 1013 cm-2 at a working vo]tage of 4-10 V and good retention characteristics are observed. Furthermore, the programming （△ VFB = 2.8 V at 10 V for 10μs） and erasing speeds （△VFB =-1.7 V at -10 V for 10μs） of the fabricated capacitor based on SiGe substrates are significantly improved as compared with counterparts reported earlier. It is concluded that the high-κ Al2O3/HfO2/Al2O3 nanolaminate charge trapping capacitor structure based on SiGe substrates is a promising candidate for future nano-scaled nonvolatile flash memory applications.
基金Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02303007the National Key Research and Development Program of China under Grant No 2016YFA0301701the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2016112
文摘We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure（named as MONOS）, utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent programerasable characteristics attributed to the fact that more carriers are generated by the smaller bandgap of Si Ge during program/erase operations. A flat-band voltage shift 2.8 V can be obtained by programming at ＋11 V for 100 us. Meanwhile, the memory device exhibits a large memory window of ~7.17 V under ±12 V sweeping voltage, and a negligible charge loss of 18% after 104 s＇ retention. In addition, the leakage current density is lower than 2.52 × 10^（-7） A·cm^（-2） below a gate breakdown voltage of 12.5 V. Investigation of leakage current-voltage indicates that the Schottky emission is the predominant conduction mechanisms for leakage current. These desirable characteristics are ascribed to the higher trap density of the Si_3N_4 charge trapping layer and the better quality of the interface between the SiO_2 tunneling layer and the Si Ge buried channel. Therefore, the application of the Si Ge buried channel is very promising to construct 3 D charge trapping NAND flash devices with improved operation characteristics.
基金The National Natural Science Foundation of China(52478058)The 2025 Yunnan Provincial Philosophy and Social Science Planning Annual Project(QN202522)。
文摘The geographical environment of the Zhaozhou Basin provides diverse possibilities for the formation and evolution of vernacular settlements and architectural spaces within multi-ethnic communities.Taking the vernacular settlements and architecture of the Zhaozhou Basin as a case study,this research adopts the anthropological concept of the“Bazi Society”as an analytical framework,and integrates the methodology of“social memory”to explore the social mechanisms that shape regional architectural space.By utilizing the“social memory”research approach,this study integrates GIS image analysis,social memory indicator surveys,oral interviews,and local historical materials from the Ming and Qing Dynasties,including local chronicles,historical maps,and illustrations,along with data from the Republican era,to conduct an in-depth investigation of typical settlements in the Zhaozhou Basin.This study proposes a“rule of in-depth memory depiction”,which is structured around three elements:the research objects(settlement spaces,public temples,and vernacular dwellings),the analytical dimensions(spatial patterns,cultural practices,and collective memory),and the narrative methods(oral testimony,schematic mapping,and quantitative indicators),thereby providing a clear framework for its application.It analyzes the feasibility of the research pathway for the“Bazi Society of basins”.The results can be summarized in three points.(1)Based on field investigation and GIS-historical triangulation,151 valid questionnaires yielded five principal memory factors(communalities>0.8;cumulative variance contribution rate 85.66%),thus verifying the operational feasibility and quantitative validity of the“Thick Description of Memory”framework.(2)Settlements in the Zhaozhou Basin exhibit a significant“landform-function-memory coupling pattern”,which reveals the continuous reconstruction of power structures and spatial forms within the processes of social memory.(3)Despite their functional transformations,public temples continue to serve as the spiritual cores of communities and as explicit carriers of collective memory,so they reflect the material continuity of productive and everyday life memories.Overall,this study demonstrates that“social memory functions as a key mediating mechanism”linking geographical environment,social practice,and vernacular architectural space,which provides new theoretical and methodological support for understanding the evolutionary logic of basin settlements and for guiding cultural heritage renewal.
基金Supported by the National Natural Science Foundation of China under Grant No 61404055
文摘Nano-floating gate memory devices with ZnO nano-crystals as charge storage layers are fabricated,and the influence of post-deposition annealing temperature and thickness of the ZnO layer are investigated.Atomic force microscopy and scanning electron microscopy reveal the morphology of discrete ZnO nano-crystals.For capacitance-voltage measurements,it is found that the memory device with 1.5 nm ZnO and annealed at 700℃shows a larger memory window of 4.3 V（at±6 V）and better retention characteristics than memoriy devices with2.5 nm ZnO or annealed at other temperatures.These results indicate that the nano-floating gate memory with ZnO nano-crystals can obtain good trade-off memory properties.
基金Supported by the National Natural Science Foundation of China under Grant No 51202196the National Aerospace Science Foundation of China under Grant No 2013ZF53067+2 种基金the Natural Science Basic Research Plan in Shaanxi Province of China under Grant No 2014JQ6204the Fundamental Research Funds for the Central Universities under Grant No 3102014JCQ01032the 111 Project under Grant No B08040
文摘Cu/HfOx/n^＋Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching （RS） characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects （oxygen vacancies） in the film. The sample with thickness of 2Onto and Ar/O2 ratio of 12：3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.
基金supported by the National Natural Science Foundation of China(No.60976091)
文摘： Metal-oxide-nitride-oxide-silicon （MONOS） capacitors with thermally grown SiO2 as the tunnel layer are fabricated, and the effects of different ambient nitridation （NH3, NO and N20） on the characteristics of the memory capacitors are investigated. The experimental results indicate that the device with tunnel oxide annealed in NO ambient exhibits excellent memory characteristics, i.e. a large memory window, high program/erase speed, and good endurance and retention performance （the charge loss rate is 14.5% after l0 years）. The mechanism involved is that much more nitrogen is incorporated into the tunnel oxide during NO annealing, resulting in a lower tunneling barrier height and smaller interface state density. Thus, there is a higher tunneling rate under a high electric field and a lower probability of trap-assisted tunneling during retention, as compared to N20 annealing. Furthermore, compared with the NH3-annealed device, no weak Si-H bonds and electron traps related to the hydrogen are introduced for the NO-annealed devices, giving a high-quality and high-reliability SiON tunneling layer and SiON/Si interface due to the suitable nitridation and oxidation roles of NO. Key words： MONOS memory; memory characteristics; annealing; nitridation
