期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
A 28 nm 576K RRAM-based computing-in-memory macro featuring hybrid programming with area efficiency of 2.82 TOPS/mm^(2)
1
作者 Siqi Liu Songtao Wei +7 位作者 Peng Yao Dong Wu Lu Jie Sining Pan Jianshi Tang Bin Gao He Qian Huaqiang Wu 《Journal of Semiconductors》 2025年第6期112-119,共8页
Computing-in-memory(CIM)has been a promising candidate for artificial-intelligent applications thanks to the absence of data transfer between computation and storage blocks.Resistive random access memory(RRAM)based CI... Computing-in-memory(CIM)has been a promising candidate for artificial-intelligent applications thanks to the absence of data transfer between computation and storage blocks.Resistive random access memory(RRAM)based CIM has the advantage of high computing density,non-volatility as well as high energy efficiency.However,previous CIM research has predominantly focused on realizing high energy efficiency and high area efficiency for inference,while little attention has been devoted to addressing the challenges of on-chip programming speed,power consumption,and accuracy.In this paper,a fabri-cated 28 nm 576K RRAM-based CIM macro featuring optimized on-chip programming schemes is proposed to address the issues mentioned above.Different strategies of mapping weights to RRAM arrays are compared,and a novel direct-current ADC design is designed for both programming and inference stages.Utilizing the optimized hybrid programming scheme,4.67×programming speed,0.15×power saving and 4.31×compact weight distribution are realized.Besides,this macro achieves a normalized area efficiency of 2.82 TOPS/mm2 and a normalized energy efficiency of 35.6 TOPS/W. 展开更多
关键词 computing-in-memory on-chip programming scheme hybrid programming resistive random access memory matrix-vector-multiplication acceleration
在线阅读 下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部