Multiferroics, having both magnetic and electric orders withina single material, have been extensively studied for academiccuriosity and possible applications, including energy-efficientmemory and logic devices [1–3]...Multiferroics, having both magnetic and electric orders withina single material, have been extensively studied for academiccuriosity and possible applications, including energy-efficientmemory and logic devices [1–3]. Although several multiferroicmaterials have been reported for bulk single crystals, recentinterest has shifted towards atomically thin magnetic materials.Achieving multiferroic at the limit of few or single atomic layershas become a significant challenging [4,5].展开更多
Precise electric control of magnetic order and anomalous Hall conductivity(AHC)is pivotal for spintronics.While electric-field control of magnetic order and AHC has been explored in magnetoelectric materials,achieving...Precise electric control of magnetic order and anomalous Hall conductivity(AHC)is pivotal for spintronics.While electric-field control of magnetic order and AHC has been explored in magnetoelectric materials,achieving precise and energy-efficient magnetic order switching between two P^(^)T^(^)symmetry-connected magnetic states remains challenging.Here,we propose the utilization of the combined P^(^)T^(^)symmetry that establishes a direct connection between electric polarization and magnetic orders,to electrically manipulate magnetic order and the AHC.Using 3MnB_(2)T_(4)·2B_(2)T_(3)(B=Sb/Bi,T=Se/Te)as an example,we demonstrate that the P^(^)T^(^)connected up-up-down(UUD)and up-down-down(UDD)states exhibit switchable magnetic configurations via electric polarization.The energy difference between the UUD and UDD states is linearly modulated by electric polarizations,enabling full control of the magnetic states via electric field,spontaneous polarization,or even weak sliding ferroelectricity.The findings demonstrate that P^(^)T^(^) symmetry can be well utilized to design electric polarization-controlled magnetic orders and will find important applications in spintronics.展开更多
Valleytronic devices based on all-optical ultrafast control are expected to increase the speed of information processing to petahertz and serve a new generation of quantum computers.However,the current difficulty in r...Valleytronic devices based on all-optical ultrafast control are expected to increase the speed of information processing to petahertz and serve a new generation of quantum computers.However,the current difficulty in realizing this vision is the lack of a nondamaging means suitable for ultrafast lasers.We propose a robust scheme to control the valley polarization of monolayer materials,achieved through the quantum interference between 1-and 2-photon transition pathways.The scheme reveals that conventional circularly polarized light is unnecessary for resonantly induced valley polarization and,instead,only a parallel-polarized 2-color field is required.The interference dynamics enables the switch of valley to be manipulated within few femtoseconds without the necessity for extremely strong or single-cycle pulses.The disclosure of this interference scheme enables repetitive operations in valley devices for signal processing at petahertz clock rates without causing material damage.It sheds light on the practical manufacture of high-speed valleytronic devices.展开更多
文摘Multiferroics, having both magnetic and electric orders withina single material, have been extensively studied for academiccuriosity and possible applications, including energy-efficientmemory and logic devices [1–3]. Although several multiferroicmaterials have been reported for bulk single crystals, recentinterest has shifted towards atomically thin magnetic materials.Achieving multiferroic at the limit of few or single atomic layershas become a significant challenging [4,5].
基金supported by the Natural Science Basic Research Program of Shaanxi (Program No. 2024JC-YBMS-009)the project of the National Natural Science Foundation of China (Program No. 12474061)+2 种基金Shaanxi Qinchuangyuan High-Level Innovative and Entrepreneurial Talent Introduction Program (QCYRCXM-2023-077)The Natural Science Fund of Shaanxi Province for the key project (2021JZ-07)Leading Talents in Scientifc and Technological Innovation Program of Shaanxi Province, and the Polymer Electromagnetic Functional Materials Innovation Team of Shaanxi Sanqin Scholars. T.C. also thanks the support from the Youth Project of “Shanxi High-level Talents Introduction Plan (5113240032)”. T.C. also thanks Prof. Jian Zhou, Prof. Jingsheng CHEN for the helpful discussions.
文摘Precise electric control of magnetic order and anomalous Hall conductivity(AHC)is pivotal for spintronics.While electric-field control of magnetic order and AHC has been explored in magnetoelectric materials,achieving precise and energy-efficient magnetic order switching between two P^(^)T^(^)symmetry-connected magnetic states remains challenging.Here,we propose the utilization of the combined P^(^)T^(^)symmetry that establishes a direct connection between electric polarization and magnetic orders,to electrically manipulate magnetic order and the AHC.Using 3MnB_(2)T_(4)·2B_(2)T_(3)(B=Sb/Bi,T=Se/Te)as an example,we demonstrate that the P^(^)T^(^)connected up-up-down(UUD)and up-down-down(UDD)states exhibit switchable magnetic configurations via electric polarization.The energy difference between the UUD and UDD states is linearly modulated by electric polarizations,enabling full control of the magnetic states via electric field,spontaneous polarization,or even weak sliding ferroelectricity.The findings demonstrate that P^(^)T^(^) symmetry can be well utilized to design electric polarization-controlled magnetic orders and will find important applications in spintronics.
基金supported by the Hubei Provincial Natural Science Foundation of China(Grant No.2024AFA029)the National Natural Science Foundation of China(Grant No.12204492)the CAS Project for Young Scientists in Basic Research(Grant No.YSBR-059).
文摘Valleytronic devices based on all-optical ultrafast control are expected to increase the speed of information processing to petahertz and serve a new generation of quantum computers.However,the current difficulty in realizing this vision is the lack of a nondamaging means suitable for ultrafast lasers.We propose a robust scheme to control the valley polarization of monolayer materials,achieved through the quantum interference between 1-and 2-photon transition pathways.The scheme reveals that conventional circularly polarized light is unnecessary for resonantly induced valley polarization and,instead,only a parallel-polarized 2-color field is required.The interference dynamics enables the switch of valley to be manipulated within few femtoseconds without the necessity for extremely strong or single-cycle pulses.The disclosure of this interference scheme enables repetitive operations in valley devices for signal processing at petahertz clock rates without causing material damage.It sheds light on the practical manufacture of high-speed valleytronic devices.
