The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has notbeen available for a long time. The end of range defects in St...The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has notbeen available for a long time. The end of range defects in St, produced by 140keVGe+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B+ implantation. The concentration of interstitial resultingfrom the B+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker,resulting from mobile non-equilibrium interstitials was demonstrated to be transient.Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well.展开更多
文摘The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has notbeen available for a long time. The end of range defects in St, produced by 140keVGe+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B+ implantation. The concentration of interstitial resultingfrom the B+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker,resulting from mobile non-equilibrium interstitials was demonstrated to be transient.Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well.
基金国家高技术研究发展计划(863)(the National High-Tech Research and Development Plan of China under Grant No.2006AA01Z324)西北工业大学研究生创业种子基金(the Graduate Starting Seed Fund of Northwestern Polytechnical UniversityNo.Z200752)。
