We have studied the optical spectra of low-dimensional semiconductor systems by calculating all possible optical transitions between electronic states. Optical absorption and emission have been obtained under differen...We have studied the optical spectra of low-dimensional semiconductor systems by calculating all possible optical transitions between electronic states. Optical absorption and emission have been obtained under different carrier population conditions and in different photon wavelengths. The line-shapes of the peaks in the optical spectrum are determined by the density of electronic states of the system, and the symmetries and intensities of these peaks can be improved by reducing the dimensionality of the system. Optical gain requires in general a population inversion, whereas for a quantum-dot system, there exists a threshold value of the population inversion.展开更多
Low-dimensional(LD)halide perovskites have attracted considerable attention due to their distinctive structures and exceptional optoelectronic properties,including high absorption coefficients,extended charge carrier ...Low-dimensional(LD)halide perovskites have attracted considerable attention due to their distinctive structures and exceptional optoelectronic properties,including high absorption coefficients,extended charge carrier diffusion lengths,suppressed non-radiative recombination rates,and intense photoluminescence.A key advantage of LD perovskites is the tunability of their optical and electronic properties through the precise optimization of their structural arrangements and dimensionality.This review systematically examines recent progress in the synthesis and optoelectronic characterizations of LD perovskites,focusing on their structural,optical,and photophysical properties that underpin their versatility in diverse applications.The review further summarizes advancements in LD perovskite-based devices,including resistive memory,artificial synapses,photodetectors,light-emitting diodes,and solar cells.Finally,the challenges associated with stability,scalability,and integration,as well as future prospects,are discussed,emphasizing the potential of LD perovskites to drive breakthroughs in device efficiency and industrial applicability.展开更多
Low-dimensional(including two-dimensional[2D],one-dimensional[1D],and zero-dimensional[0D])semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and chara...Low-dimensional(including two-dimensional[2D],one-dimensional[1D],and zero-dimensional[0D])semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and characteristics.Many 2D(such as transition metal dichalcogenides and black phosphorus)and 1D(such as NWs)materials have demonstrated superior performance in field effect transistors,photodetectors(PDs),and some flexible devices.And in some hybrid structures of 0D materials and 1D or 2D materials,the modification of 1D and 2D devices by 0D materials is embodied.This type of hybrid heterostructure has a larger performance optimization compared with the original.In the application of PDs,the variety of lowdimensional materials and properties enable wide-spectrum detection from ultraviolet UV to infrared,which provide a potential option for PDs under various conditions.For flexible electronic devices,high performance and mechanical stability are two important features.Low-dimensional materials offer unparalleled advantages in flexible devices.In this review,we will focus on the various low-dimensional materials that have been extensively studied and their applications in the electronics/optoelectronic and flexible electronics.From the composition and lattice structure of materials(including alloys)to the construction of various devices and heterostructures,we will introduce their application and recent development under various conditions.These works can provide valuable guidance for the construction and application of more highperformance and multifunctional devices.展开更多
Metal oxide semiconductors(MOSs) are attractive candidates as functional parts and connections in nanodevices.Upon spatial dimensionality reduction, the ubiquitous strain encountered in physical reality may result in ...Metal oxide semiconductors(MOSs) are attractive candidates as functional parts and connections in nanodevices.Upon spatial dimensionality reduction, the ubiquitous strain encountered in physical reality may result in structural instability and thus degrade the performance of MOS. Hence, the basic insight into the structural evolutions of low-dimensional MOS is a prerequisite for extensive applications, which unfortunately remains largely unexplored. Herein, we review the recent progress regarding the mechanical deformation mechanisms in MOSs, such as CuO and ZnO nanowires(NWs). We report the phase transformation of CuO NWs resulting from oxygen vacancy migration under compressive stress and the tensile strain-induced phase transition in ZnO NWs. Moreover, the influence of electron beam irradiation on interpreting the mechanical behaviors is discussed.展开更多
Carbon-based low-dimensional materials(CLDM)with elemental carbon as the main component have unique physical and chemical properties,and become the focus of research in many fields including energy,environmental prote...Carbon-based low-dimensional materials(CLDM)with elemental carbon as the main component have unique physical and chemical properties,and become the focus of research in many fields including energy,environmental protection,and information technology.Notably,cellulose acetate,the main component of cigarette butts(CBs),is a one-dimensional precursor with a large specific surface area and aspect ratio.Still,their usefulness as building fillers has often been underestimated before.This review summarizes recent advances in CBs recycling and provides suggested guidelines for its use as a CLDM material in renewable energy.Specifically,we first describe the harmful effects of CBs as pollutants in our lives to emphasize the importance of proper recycling.We then summarize previous methods of recycling CBs waste,including clay bricks,asphalt concrete pavement,gypsum,acoustic materials,chemisorption,vector control,and corrosion control.The potential applications of CBs include triboelectric nanogenerator applications,flexible batteries,enhanced metal-organic framework material energy storage devices,and carbon-based hydrogen storage.Finally,the advantages of utilizing CBs-derived CLDM materials over conventional solutions in the energy field are discussed.This review will provide new avenues for solving the intractable problem of CBs and reducing the manufacturing costs of renewable materials.展开更多
Linearly polarized photodetectors(PDs),leveraging the inherent structural and material information encoded in light's polarization state,hold transformative potential for applications ranging from remote sensing t...Linearly polarized photodetectors(PDs),leveraging the inherent structural and material information encoded in light's polarization state,hold transformative potential for applications ranging from remote sensing to biomedical imaging.Traditional systems that rely on external polarizing elements face challenges in miniaturization and efficiency,driving interest in materials with intrinsic anisotropy.Low-dimensional metal halide perovskites,distinguished by their tunable bandgaps,high carrier mobility,and quantum confinement effects,have emerged as a groundbreaking platform for next-generation polarized PDs.This review comprehensively summarizes the theory,materials,and device engineering of linearly polarized PDs based on low-dimensional perovskites.It aims to elucidate polarization mechanisms across dimensions by establishing a rigorous theoretical foundation for linearly polarized PDs of low-dimensional perovskites.Beyond theoretical insights,the review also highlights cutting-edge fabrication techniques for one-dimensional nano wires and two-dimensional heterostructures,along with performance benchmarks of state-of-the-art devices.By integrating experimental advancements with theoretical insights,this work not only advances the fundamental understanding of polarization mechanisms but also outlines actionable pathways for optimizing device performance,stability,and scalability,which may serve as a critical resource for researchers aiming to harness the full potential of low-dimensional perovskites in polarized optoelectronics.展开更多
Bacterial infections have always been a major threat to human health.Skin wounds are frequently exposed to the external environment,and they may become contaminated by bacteria derived from the surrounding skin,the lo...Bacterial infections have always been a major threat to human health.Skin wounds are frequently exposed to the external environment,and they may become contaminated by bacteria derived from the surrounding skin,the local environment,and the patient’s own endogenous sources.Contaminated wounds may enter a state of chronic inflammation that impedes healing.Urgent development of antibacterial wound dressings capable of effectively combating bacteria and overcoming resistance is necessary.Nanotechnology and nanomaterials present promising potential as innovative strategies for antimicrobial wound dressings,owing to their robust antibacterial characteristics and the inherent advantage of avoiding antibiotic resistance.Therefore,this review provides a concise overview of the antimicrobial mechanisms exhibited by low-dimensional nanomaterials.It further categorizes common low-dimensional antimicrobial nanomaterials into zero-dimensional(0D),one-dimensional(1D)and two-dimensional(2D)nanomaterials based on their structural characteristics,and gives a detailed compendium of the latest research advances and applications of different low-dimensional antimicrobial nanomaterials in wound healing,which could be helpful for the development of more effective wound dressings.展开更多
Titanium-based semiconductors are known for their high chemical stability and suitable band gap widths.However,the conventional experimental screening methods are inefficient due to the wide variety of materials.To sp...Titanium-based semiconductors are known for their high chemical stability and suitable band gap widths.However,the conventional experimental screening methods are inefficient due to the wide variety of materials.To speed up the selection process,this work focuses on interpretable feature learning and band gap prediction for titanium-based semiconductors.First,titanium compounds were selected from the Materials Project database by machine learning,and elemental features were extracted using the Magpie descriptors.Then,principal component analysis(PCA)was applied to reduce the data dimensionality,creating a representative dataset.Meantime,heatmaps and SHAP(SHapley Additive exPlanations)methods were used to demonstrate the influence of key features such as electronegativity,covalent radius,period number,and unit cell volume on the bandgap,understanding the relationship between the material’s properties and performance.After comparing different machine learning models,including Random Forest(RF),Support Vector Machines(SVM),Linear Regression(LR),and Gradient Boosting Regression(GBR),the RF was found to be the most accurate for band gap prediction.Finally,the model performance was improved through parameter tuning,showing high accuracy.These findings provide strong data support and design guidance for the development of materials in fields like photocatalysis and solar cells.展开更多
Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully construct...Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully constructed by coordinatively assembling the semi-rigid multidentate ligand 5-(1-carboxyethoxy)isophthalic acid(H₃CIA)with the Nheterocyclic ligands 1,4-di(4H-1,2,4-triazol-4-yl)benzene(1,4-dtb)and 1,4-di(1H-imidazol-1-yl)benzene(1,4-dib),respectively,around Co^(2+)ions.Single-crystal X-ray diffraction analysis revealed that in both complexes HU23 and HU24,the CIA^(3-)anions adopt aκ^(7)-coordination mode,bridging six Co^(2+)ions via their five carboxylate oxygen atoms and one ether oxygen atom.This linkage forms tetranuclear[Co4(μ3-OH)2]^(6+)units.These Co-oxo cluster units were interconnected by CIA^(3-)anions to assemble into 2D kgd-type structures featuring a 3,6-connected topology.The 2D layers were further connected by 1,4-dtb and 1,4-dib,resulting in 3D pillar-layered frameworks for HU23 and HU24.Notably,despite the similar configurations of 1,4-dtb and 1,4-dib,differences in their coordination spatial orientations lead to topological divergence in the 3D frameworks of HU23 and HU24.Topological analysis indicates that the frameworks of HU23 and HU24 can be simplified into a 3,10-connected net(point symbol:(4^(10).6^(3).8^(2))(4^(3))_(2))and a 3,8-connected tfz-d net(point symbol:(4^(3))_(2)((4^(6).6^(18).8^(4)))),respectively.This structural differentiation confirms the precise regulatory role of ligands on the topology of metal-organic frameworks.Moreover,the ultraviolet-visible absorption spectra confirmed that HU23 and HU24 have strong absorption capabilities for ultraviolet and visible light.According to the Kubelka-Munk method,their bandwidths were 2.15 and 2.08 eV,respectively,which are consistent with those of typical semiconductor materials.Variable-temperature magnetic susceptibility measurements(2-300 K)revealed significant antiferromagnetic coupling in both complexes,with their effective magnetic moments decreasing markedly as the temperature lowered.CCDC:2457554,HU23;2457553,HU24.展开更多
Efficient photo-patterning of polymer semiconductors with cross-linkers has emerged as a promising route to fabricate organic integrated circuits via all-solution processing techniques.Herein,we report a new four-arme...Efficient photo-patterning of polymer semiconductors with cross-linkers has emerged as a promising route to fabricate organic integrated circuits via all-solution processing techniques.Herein,we report a new four-armed diazo-based oligomer photo-crosslinker 2DPP4N_(2)for the patterning of semiconducting polymers by UV light-induced crossing-linking reaction.After blending 2DPP4N_(2)with polymer semiconductors such as PDPP4T(p-type),PDPP3T(ambipolar)and N2200(n-type),we prepared various patterns with a resolution of 6μm by irradiating through a photo-mask with 254 nm UV light for 160 s.Notably,the interchain packing and surface morphology remained nearly unchanged after photo-patterning,as characterized by atomic force microscopy(AFM)and grazing incidence wide-angle X-ray scattering(GIWAXS).Consequently,the charge transport property of the patterned thin film was largely maintained in comparison to that of its pristine thin film.These results reveal that 2DPP4N_(2)is a viable and promising candidate for application in all-solution-processable flexible integrated electronic devices.展开更多
Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for ...Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.展开更多
Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models...Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models for three-dimensional(3D)PSC contact problems are still scarce,especially for conductive indenters.This work develops a semi-analytical framework to study the 3D frictionless contact between a conductive indenter and a PSC half-space.Fundamental solutions under a unit force and a unit electric charge are derived,and the corresponding frequency response functions are combined with a discrete convolution-fast Fourier transform(DC-FFT)algorithm to achieve an efficient semi-analytical contact model.The numerical results demonstrate that an increase in the surface charge density reduces the indentation pressure and modifies the electric potential distribution.A higher steady carrier concentration enhances the screening effect,suppresses the electromechanical coupling,and shifts the system response toward purely elastic behaviors.The sensitivity analysis shows that the indentation depth is dominated by the elastic constants,while the electric potential is mainly affected by the piezoelectric coefficient.Although the analysis is carried out with spherical indenters,the model is not limited to a specific indenter shape.It provides an effective tool for investigating complex 3D PSC contact problems and offers useful insights into the design of PSC materials-based devices.展开更多
Oxide semiconductors(OSs),introduced by the Hosono group in the early 2000s,have evolved from display backplane materials to promising candidates for advanced memory and logic devices.The exceptionally low leakage cur...Oxide semiconductors(OSs),introduced by the Hosono group in the early 2000s,have evolved from display backplane materials to promising candidates for advanced memory and logic devices.The exceptionally low leakage current of OSs and compatibility with three-dimensional(3D)architectures have recently sparked renewed interest in their use in semiconductor applications.This review begins by exploring the unique material properties of OSs,which fundamentally originate from their distinct electronic band structure.Subsequently,we focus on atomic layer deposition(ALD),a core technique for growing excellent OS films,covering both basic and advanced processes compatible with 3D scaling.The basic surface reaction mechanisms—adsorption and reaction—and their roles in film growth are introduced.Furthermore,material design strategies,such as cation selection,crystallinity control,anion doping,and heterostructure engineering,are discussed.We also highlight challenges in memory applications,including contact resistance,hydrogen instability,and lack of p-type materials,and discuss the feasibility of ALD-grown OSs as potential solutions.Lastly,we provide an outlook on the role of ALD-grown OSs in memory technologies.This review bridges material fundamentals and device-level requirements,offering a comprehensive perspective on the potential of ALD-driven OSs for next-generation semiconductor memory devices.展开更多
Due to the intrinsic interaction between piezoelectric effects and semiconducting properties,piezoelectric semiconductors(PSs)have great promise for applications in multi-functional electronic devices,requiring a deep...Due to the intrinsic interaction between piezoelectric effects and semiconducting properties,piezoelectric semiconductors(PSs)have great promise for applications in multi-functional electronic devices,requiring a deep understanding of the multi-field coupling behavior.This work investigates the free vibration and buckling characteristics of a PS beam under different mechanical boundary conditions.The coupling fields of a PS beam are modeled by combining the Timoshenko beam theory for mechanical fields with a high-order expansion along the beam thickness for electric fields and carrier distributions.Based on the hypothesis of small perturbation of carrier density,the governing equations and boundary conditions are derived with the principle of virtual work.The differential quadrature method(DQM)is used to solve the boundary-value problem.The analytical solutions for a simply supported-simply supported(SS)PS beam are also obtained for verification.The convergence and correctness of the solutions obtained with the DQM are first evaluated.Subsequently,the effects of initial electron density,boundary conditions,and geometric parameters on the vibration and buckling characteristics are explored through numerical examples,where the finite element simulations are also included.The interaction mechanism of multi-physics fields is revealed.The scale effect on the static and dynamic responses of a PS beam is demonstrated.The derived model and findings are useful for the analysis and design of PS-based devices.展开更多
Understanding the fracture behavior of vertical cracks in piezoelectric semiconductor(PS)structures is vital due to their impacts on device reliability.This study establishes a model for a PS strip with a vertical cra...Understanding the fracture behavior of vertical cracks in piezoelectric semiconductor(PS)structures is vital due to their impacts on device reliability.This study establishes a model for a PS strip with a vertical crack under combined mechanical and electric loading,considering both central and edge cracks.Using Fourier transforms and dislocation density functions,the Mode-Ⅲproblem is converted to Cauchy-type singular integral equations.The crack surface fields,intensity factors,and energy release rate are derived.The accuracy of the proposed model is verified through the finite element(FE)simulation via COMSOL Multiphysics.The results for low electron concentrations align with those of the intrinsic piezoelectric materials,validating the correctness of the present model as well.The combined effects of crack position,applied electric loading,and initial carrier concentration on the crack propagation are analyzed.The normalized electric displacement factor shows heightened sensitivity to crack size,electromechanical loading,and carrier concentration.The crack position significantly influences the crack surface fields and normalized intensity factors due to the boundary proximity effect.展开更多
In order to overcome the shortcomings that the reconstructed spectral reflectance may be negative when using the classic principal component analysis （PCA）to reduce the dimensions of the multi-spectral data, a nonne...In order to overcome the shortcomings that the reconstructed spectral reflectance may be negative when using the classic principal component analysis （PCA）to reduce the dimensions of the multi-spectral data, a nonnegative constrained principal component analysis method is proposed to construct a low-dimensional multi-spectral space and accomplish the conversion between the new constructed space and the multispectral space. First, the reason behind the negative data is analyzed and a nonnegative constraint is imposed on the classic PCA. Then a set of nonnegative linear independence weight vectors of principal components is obtained, by which a lowdimensional space is constructed. Finally, a nonlinear optimization technique is used to determine the projection vectors of the high-dimensional multi-spectral data in the constructed space. Experimental results show that the proposed method can keep the reconstructed spectral data in [ 0, 1 ]. The precision of the space created by the proposed method is equivalent to or even higher than that by the PCA.展开更多
Some kinds of low-dimensional nanostructures can be formed by irradiation of laser on the pure silicon sample and the SiGe alloy sample. This paper has studied the photoluminescence （PL） of the hole-net structure of...Some kinds of low-dimensional nanostructures can be formed by irradiation of laser on the pure silicon sample and the SiGe alloy sample. This paper has studied the photoluminescence （PL） of the hole-net structure of silicon and the porous structure of SiGe where the PL intensity at 706nm and 725nm wavelength increases obviously. The effect of intensity-enhancing in the PL peaks cannot be explained within the quantum confinement alone. A mechanism for increasing PL emission in the above structures is proposed, in which the trap states of the interface between SiO2 and nanocrystal play an important role.展开更多
Metal halide perovskites are crystalline materials originally developed out of scientific curiosity. They have shown great potential as active materials in optoelectronic applications. In the last 6 years, their certi...Metal halide perovskites are crystalline materials originally developed out of scientific curiosity. They have shown great potential as active materials in optoelectronic applications. In the last 6 years, their certified photovoltaic efficiencies have reached 22.1%. Compared to bulk halide perovskites, low-dimensional ones exhibited novel physical properties. The photoluminescence quantum yields of perovskite quantum dots are close to 100%. The external quantum efficiencies and current efficiencies of perovskite quantum dot light-emitting diodes have reached 8% and 43 cd A^(-1),respectively, and their nanowire lasers show ultralow-threshold room-temperature lasing with emission tunability and ease of synthesis. Perovskite nanowire photodetectors reached a responsivity of 10 A W^(-1)and a specific normalized detectivity of the order of 10^(12 )Jones. Different from most reported reviews focusing on photovoltaic applications, we summarize the rapid progress in the study of low-dimensional perovskite materials, as well as their promising applications in optoelectronic devices. In particular, we review the wide tunability of fabrication methods and the state-of-the-art research outputs of low-dimensional perovskite optoelectronic devices. Finally, the anticipated challenges and potential for this exciting research are proposed.展开更多
In recent years,low-dimensional materials have received extensive attention in the field of electronics and optoelectronics.Among them,photoelectric devices based on photoconductive effect in low-dimensional materials...In recent years,low-dimensional materials have received extensive attention in the field of electronics and optoelectronics.Among them,photoelectric devices based on photoconductive effect in low-dimensional materials have a broad development space.In contrast to positive photoconductivity,negative photoconductivity(NPC)refers to a phenomenon that the conductivity decreases under illumination.It has novel application prospects in the field of optoelectronics,memory,and gas detection,etc.In this paper,we review reports about the NPC effect in low-dimensional materials and systematically summarize the mechanisms to form the NPC effect in existing low-dimensional materials.展开更多
The photovoltaic(PV)market is currently dominated by silicon based solar cells.However technological diversification is essential to promote competition,which is the driving force for technological growth.Historically...The photovoltaic(PV)market is currently dominated by silicon based solar cells.However technological diversification is essential to promote competition,which is the driving force for technological growth.Historically,the choice of PV materials has been limited to the three-dimensional(3D)compounds with a high crystal symmetry and direct band gap.However,to meet the strict demands for sustainable PV applications,material space has been expanded beyond 3D compounds.In this perspective we discuss the potential of low-dimensional materials(2D,1D)for application in PVs.We present unique features of low-dimensional materials in context of their suitability in the solar cells.The band gap,absorption,carrier dynamics,mobility,defects,surface states and growth kinetics are discussed and compared to 3D counterparts,providing a comprehensive view of prospects of low-dimensional materials.Structural dimensionality leads to a highly anisotropic carrier transport,complex defect chemistry and peculiar growth dynamics.By providing fundamental insights into these challenges we aim to deepen the understanding of low-dimensional materials and expand the scope of their application.Finally,we discuss the current research status and development trend of solar cell devices made of low-dimensional materials.展开更多
文摘We have studied the optical spectra of low-dimensional semiconductor systems by calculating all possible optical transitions between electronic states. Optical absorption and emission have been obtained under different carrier population conditions and in different photon wavelengths. The line-shapes of the peaks in the optical spectrum are determined by the density of electronic states of the system, and the symmetries and intensities of these peaks can be improved by reducing the dimensionality of the system. Optical gain requires in general a population inversion, whereas for a quantum-dot system, there exists a threshold value of the population inversion.
基金funding from FCT(Fundagao para a Ciencia e Tecnologia,I.P.)under the projects LA/P/0037/2020,UIDP/50025/2020 and UIDB/50025/2020 of the Associate Laboratory Institute of Nanostructures,Nanomodelling and Nanofabrication-i3Nby the projects FlexSolar(PTDC/CTM-REF/1008/2020),and SpaceFlex(2022.01610.PTDC,DOI:10.54499/2022.01610.PTDC)+1 种基金supported by the project M-ECO2-Industrial Cluster for advanced biofuel production,Ref.C644930471-00000041,R2U Technologies and Befunding from the European Union via the project X-STREAM(Horizon EU,ERC CoG,No 101124803)the support of a fellowship from the"la Caixa"Foundation(ID 100010434)。
文摘Low-dimensional(LD)halide perovskites have attracted considerable attention due to their distinctive structures and exceptional optoelectronic properties,including high absorption coefficients,extended charge carrier diffusion lengths,suppressed non-radiative recombination rates,and intense photoluminescence.A key advantage of LD perovskites is the tunability of their optical and electronic properties through the precise optimization of their structural arrangements and dimensionality.This review systematically examines recent progress in the synthesis and optoelectronic characterizations of LD perovskites,focusing on their structural,optical,and photophysical properties that underpin their versatility in diverse applications.The review further summarizes advancements in LD perovskite-based devices,including resistive memory,artificial synapses,photodetectors,light-emitting diodes,and solar cells.Finally,the challenges associated with stability,scalability,and integration,as well as future prospects,are discussed,emphasizing the potential of LD perovskites to drive breakthroughs in device efficiency and industrial applicability.
基金This work was financially supported by the National Natural Science Foundation of China(Grant No.61622406,61571415,61625404,61888102)the National Key Research and Development Program of China(Grant No.2017YFA0207500,2016YFB0700700)+1 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB30000000)the Beijing Academy of Quantum Information Sciences(Grant No.Y18G04).
文摘Low-dimensional(including two-dimensional[2D],one-dimensional[1D],and zero-dimensional[0D])semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and characteristics.Many 2D(such as transition metal dichalcogenides and black phosphorus)and 1D(such as NWs)materials have demonstrated superior performance in field effect transistors,photodetectors(PDs),and some flexible devices.And in some hybrid structures of 0D materials and 1D or 2D materials,the modification of 1D and 2D devices by 0D materials is embodied.This type of hybrid heterostructure has a larger performance optimization compared with the original.In the application of PDs,the variety of lowdimensional materials and properties enable wide-spectrum detection from ultraviolet UV to infrared,which provide a potential option for PDs under various conditions.For flexible electronic devices,high performance and mechanical stability are two important features.Low-dimensional materials offer unparalleled advantages in flexible devices.In this review,we will focus on the various low-dimensional materials that have been extensively studied and their applications in the electronics/optoelectronic and flexible electronics.From the composition and lattice structure of materials(including alloys)to the construction of various devices and heterostructures,we will introduce their application and recent development under various conditions.These works can provide valuable guidance for the construction and application of more highperformance and multifunctional devices.
基金supported by the National Natural Science Foundation of China (52071237, 12074290, 51871169, 51671148, 11674251, 51601132, 52101021, and 12104345)the Natural Science Foundation of Jiangsu Province (BK20191187)+2 种基金the Fundamental Research Funds for the Central Universities (2042019kf0190)the Science and Technology Program of Shenzhen (JCYJ20190808150407522)the China Postdoctoral Science Foundation (2019M652685)。
文摘Metal oxide semiconductors(MOSs) are attractive candidates as functional parts and connections in nanodevices.Upon spatial dimensionality reduction, the ubiquitous strain encountered in physical reality may result in structural instability and thus degrade the performance of MOS. Hence, the basic insight into the structural evolutions of low-dimensional MOS is a prerequisite for extensive applications, which unfortunately remains largely unexplored. Herein, we review the recent progress regarding the mechanical deformation mechanisms in MOSs, such as CuO and ZnO nanowires(NWs). We report the phase transformation of CuO NWs resulting from oxygen vacancy migration under compressive stress and the tensile strain-induced phase transition in ZnO NWs. Moreover, the influence of electron beam irradiation on interpreting the mechanical behaviors is discussed.
基金supported by Hubei Province Technology Innovation Program Project(2024BCB073)the National Natural Science Foundation of China(52402249)the China Postdoctoral Science Foundation(2021M690930).
文摘Carbon-based low-dimensional materials(CLDM)with elemental carbon as the main component have unique physical and chemical properties,and become the focus of research in many fields including energy,environmental protection,and information technology.Notably,cellulose acetate,the main component of cigarette butts(CBs),is a one-dimensional precursor with a large specific surface area and aspect ratio.Still,their usefulness as building fillers has often been underestimated before.This review summarizes recent advances in CBs recycling and provides suggested guidelines for its use as a CLDM material in renewable energy.Specifically,we first describe the harmful effects of CBs as pollutants in our lives to emphasize the importance of proper recycling.We then summarize previous methods of recycling CBs waste,including clay bricks,asphalt concrete pavement,gypsum,acoustic materials,chemisorption,vector control,and corrosion control.The potential applications of CBs include triboelectric nanogenerator applications,flexible batteries,enhanced metal-organic framework material energy storage devices,and carbon-based hydrogen storage.Finally,the advantages of utilizing CBs-derived CLDM materials over conventional solutions in the energy field are discussed.This review will provide new avenues for solving the intractable problem of CBs and reducing the manufacturing costs of renewable materials.
基金financially supported by the National Natural Science Foundation of China(Nos.62205011,52473305,92256202,and 12261131500)the Fundamental Research Funds for the Central Universities(No.PY2507)Qian Xuesen Youth Innovation Fund of CASC
文摘Linearly polarized photodetectors(PDs),leveraging the inherent structural and material information encoded in light's polarization state,hold transformative potential for applications ranging from remote sensing to biomedical imaging.Traditional systems that rely on external polarizing elements face challenges in miniaturization and efficiency,driving interest in materials with intrinsic anisotropy.Low-dimensional metal halide perovskites,distinguished by their tunable bandgaps,high carrier mobility,and quantum confinement effects,have emerged as a groundbreaking platform for next-generation polarized PDs.This review comprehensively summarizes the theory,materials,and device engineering of linearly polarized PDs based on low-dimensional perovskites.It aims to elucidate polarization mechanisms across dimensions by establishing a rigorous theoretical foundation for linearly polarized PDs of low-dimensional perovskites.Beyond theoretical insights,the review also highlights cutting-edge fabrication techniques for one-dimensional nano wires and two-dimensional heterostructures,along with performance benchmarks of state-of-the-art devices.By integrating experimental advancements with theoretical insights,this work not only advances the fundamental understanding of polarization mechanisms but also outlines actionable pathways for optimizing device performance,stability,and scalability,which may serve as a critical resource for researchers aiming to harness the full potential of low-dimensional perovskites in polarized optoelectronics.
基金financially supportsed by National Natural Science Foundation of China(No.52173150)Guangzhou Science and Technology Program City-University Joint Funding Project(No.2023A03J0001)Postdoctoral Science Foundation(No.2022M723670).
文摘Bacterial infections have always been a major threat to human health.Skin wounds are frequently exposed to the external environment,and they may become contaminated by bacteria derived from the surrounding skin,the local environment,and the patient’s own endogenous sources.Contaminated wounds may enter a state of chronic inflammation that impedes healing.Urgent development of antibacterial wound dressings capable of effectively combating bacteria and overcoming resistance is necessary.Nanotechnology and nanomaterials present promising potential as innovative strategies for antimicrobial wound dressings,owing to their robust antibacterial characteristics and the inherent advantage of avoiding antibiotic resistance.Therefore,this review provides a concise overview of the antimicrobial mechanisms exhibited by low-dimensional nanomaterials.It further categorizes common low-dimensional antimicrobial nanomaterials into zero-dimensional(0D),one-dimensional(1D)and two-dimensional(2D)nanomaterials based on their structural characteristics,and gives a detailed compendium of the latest research advances and applications of different low-dimensional antimicrobial nanomaterials in wound healing,which could be helpful for the development of more effective wound dressings.
文摘Titanium-based semiconductors are known for their high chemical stability and suitable band gap widths.However,the conventional experimental screening methods are inefficient due to the wide variety of materials.To speed up the selection process,this work focuses on interpretable feature learning and band gap prediction for titanium-based semiconductors.First,titanium compounds were selected from the Materials Project database by machine learning,and elemental features were extracted using the Magpie descriptors.Then,principal component analysis(PCA)was applied to reduce the data dimensionality,creating a representative dataset.Meantime,heatmaps and SHAP(SHapley Additive exPlanations)methods were used to demonstrate the influence of key features such as electronegativity,covalent radius,period number,and unit cell volume on the bandgap,understanding the relationship between the material’s properties and performance.After comparing different machine learning models,including Random Forest(RF),Support Vector Machines(SVM),Linear Regression(LR),and Gradient Boosting Regression(GBR),the RF was found to be the most accurate for band gap prediction.Finally,the model performance was improved through parameter tuning,showing high accuracy.These findings provide strong data support and design guidance for the development of materials in fields like photocatalysis and solar cells.
文摘Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully constructed by coordinatively assembling the semi-rigid multidentate ligand 5-(1-carboxyethoxy)isophthalic acid(H₃CIA)with the Nheterocyclic ligands 1,4-di(4H-1,2,4-triazol-4-yl)benzene(1,4-dtb)and 1,4-di(1H-imidazol-1-yl)benzene(1,4-dib),respectively,around Co^(2+)ions.Single-crystal X-ray diffraction analysis revealed that in both complexes HU23 and HU24,the CIA^(3-)anions adopt aκ^(7)-coordination mode,bridging six Co^(2+)ions via their five carboxylate oxygen atoms and one ether oxygen atom.This linkage forms tetranuclear[Co4(μ3-OH)2]^(6+)units.These Co-oxo cluster units were interconnected by CIA^(3-)anions to assemble into 2D kgd-type structures featuring a 3,6-connected topology.The 2D layers were further connected by 1,4-dtb and 1,4-dib,resulting in 3D pillar-layered frameworks for HU23 and HU24.Notably,despite the similar configurations of 1,4-dtb and 1,4-dib,differences in their coordination spatial orientations lead to topological divergence in the 3D frameworks of HU23 and HU24.Topological analysis indicates that the frameworks of HU23 and HU24 can be simplified into a 3,10-connected net(point symbol:(4^(10).6^(3).8^(2))(4^(3))_(2))and a 3,8-connected tfz-d net(point symbol:(4^(3))_(2)((4^(6).6^(18).8^(4)))),respectively.This structural differentiation confirms the precise regulatory role of ligands on the topology of metal-organic frameworks.Moreover,the ultraviolet-visible absorption spectra confirmed that HU23 and HU24 have strong absorption capabilities for ultraviolet and visible light.According to the Kubelka-Munk method,their bandwidths were 2.15 and 2.08 eV,respectively,which are consistent with those of typical semiconductor materials.Variable-temperature magnetic susceptibility measurements(2-300 K)revealed significant antiferromagnetic coupling in both complexes,with their effective magnetic moments decreasing markedly as the temperature lowered.CCDC:2457554,HU23;2457553,HU24.
基金supported by the National Natural Science Foundation of China(No.22205242)。
文摘Efficient photo-patterning of polymer semiconductors with cross-linkers has emerged as a promising route to fabricate organic integrated circuits via all-solution processing techniques.Herein,we report a new four-armed diazo-based oligomer photo-crosslinker 2DPP4N_(2)for the patterning of semiconducting polymers by UV light-induced crossing-linking reaction.After blending 2DPP4N_(2)with polymer semiconductors such as PDPP4T(p-type),PDPP3T(ambipolar)and N2200(n-type),we prepared various patterns with a resolution of 6μm by irradiating through a photo-mask with 254 nm UV light for 160 s.Notably,the interchain packing and surface morphology remained nearly unchanged after photo-patterning,as characterized by atomic force microscopy(AFM)and grazing incidence wide-angle X-ray scattering(GIWAXS).Consequently,the charge transport property of the patterned thin film was largely maintained in comparison to that of its pristine thin film.These results reveal that 2DPP4N_(2)is a viable and promising candidate for application in all-solution-processable flexible integrated electronic devices.
基金supported by the National Natural Science Foundation of China(Grant No.22175136)the State Key Laboratory of Electrical Insulation and Power Equipment(Grant No.EIPE23127)the Fundamental Research Funds for the Central Universities(xtr052024009,xtr052025002).
文摘Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.
基金Project supported by the National Natural Science Foundation of China(No.12402113)the Sichuan Science and Technology Program(No.2024NSFSC0037)。
文摘Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models for three-dimensional(3D)PSC contact problems are still scarce,especially for conductive indenters.This work develops a semi-analytical framework to study the 3D frictionless contact between a conductive indenter and a PSC half-space.Fundamental solutions under a unit force and a unit electric charge are derived,and the corresponding frequency response functions are combined with a discrete convolution-fast Fourier transform(DC-FFT)algorithm to achieve an efficient semi-analytical contact model.The numerical results demonstrate that an increase in the surface charge density reduces the indentation pressure and modifies the electric potential distribution.A higher steady carrier concentration enhances the screening effect,suppresses the electromechanical coupling,and shifts the system response toward purely elastic behaviors.The sensitivity analysis shows that the indentation depth is dominated by the elastic constants,while the electric potential is mainly affected by the piezoelectric coefficient.Although the analysis is carried out with spherical indenters,the model is not limited to a specific indenter shape.It provides an effective tool for investigating complex 3D PSC contact problems and offers useful insights into the design of PSC materials-based devices.
基金supported by National Research Foundation of Korea(NRF)funded by Ministry of Science and ICT(MSIT)(No.RS-2023-00260527,RS-2024-00407282,RS-2025-00557667)supported by Hanyang University Industry-University Cooperation Foundation(No.202400000003943)supported by Korea Planning&Evaluation Institute of Industrial Technology(KEIT)funded by South Korean Ministry of Trade,Industry and Energy(MOTIE)(No.RS-2025-25454815,RS-2025-02308064,20017382)。
文摘Oxide semiconductors(OSs),introduced by the Hosono group in the early 2000s,have evolved from display backplane materials to promising candidates for advanced memory and logic devices.The exceptionally low leakage current of OSs and compatibility with three-dimensional(3D)architectures have recently sparked renewed interest in their use in semiconductor applications.This review begins by exploring the unique material properties of OSs,which fundamentally originate from their distinct electronic band structure.Subsequently,we focus on atomic layer deposition(ALD),a core technique for growing excellent OS films,covering both basic and advanced processes compatible with 3D scaling.The basic surface reaction mechanisms—adsorption and reaction—and their roles in film growth are introduced.Furthermore,material design strategies,such as cation selection,crystallinity control,anion doping,and heterostructure engineering,are discussed.We also highlight challenges in memory applications,including contact resistance,hydrogen instability,and lack of p-type materials,and discuss the feasibility of ALD-grown OSs as potential solutions.Lastly,we provide an outlook on the role of ALD-grown OSs in memory technologies.This review bridges material fundamentals and device-level requirements,offering a comprehensive perspective on the potential of ALD-driven OSs for next-generation semiconductor memory devices.
基金Project supported by the National Natural Science Foundation of China(Nos.U21A20430 and 12472155)the Natural Science Foundation of Hebei Province of China(No.A2024210002)。
文摘Due to the intrinsic interaction between piezoelectric effects and semiconducting properties,piezoelectric semiconductors(PSs)have great promise for applications in multi-functional electronic devices,requiring a deep understanding of the multi-field coupling behavior.This work investigates the free vibration and buckling characteristics of a PS beam under different mechanical boundary conditions.The coupling fields of a PS beam are modeled by combining the Timoshenko beam theory for mechanical fields with a high-order expansion along the beam thickness for electric fields and carrier distributions.Based on the hypothesis of small perturbation of carrier density,the governing equations and boundary conditions are derived with the principle of virtual work.The differential quadrature method(DQM)is used to solve the boundary-value problem.The analytical solutions for a simply supported-simply supported(SS)PS beam are also obtained for verification.The convergence and correctness of the solutions obtained with the DQM are first evaluated.Subsequently,the effects of initial electron density,boundary conditions,and geometric parameters on the vibration and buckling characteristics are explored through numerical examples,where the finite element simulations are also included.The interaction mechanism of multi-physics fields is revealed.The scale effect on the static and dynamic responses of a PS beam is demonstrated.The derived model and findings are useful for the analysis and design of PS-based devices.
基金Project supported by the Guangdong Basic and Applied Basic Research Foundation of China(Nos.2022B1515020099 and 2024A1515240026)the National Natural Science Foundation of China(No.12372147)the Fundamental Research Funds for the Central Universities of China(No.HIT.OCEF.2024019)。
文摘Understanding the fracture behavior of vertical cracks in piezoelectric semiconductor(PS)structures is vital due to their impacts on device reliability.This study establishes a model for a PS strip with a vertical crack under combined mechanical and electric loading,considering both central and edge cracks.Using Fourier transforms and dislocation density functions,the Mode-Ⅲproblem is converted to Cauchy-type singular integral equations.The crack surface fields,intensity factors,and energy release rate are derived.The accuracy of the proposed model is verified through the finite element(FE)simulation via COMSOL Multiphysics.The results for low electron concentrations align with those of the intrinsic piezoelectric materials,validating the correctness of the present model as well.The combined effects of crack position,applied electric loading,and initial carrier concentration on the crack propagation are analyzed.The normalized electric displacement factor shows heightened sensitivity to crack size,electromechanical loading,and carrier concentration.The crack position significantly influences the crack surface fields and normalized intensity factors due to the boundary proximity effect.
基金The Pre-Research Foundation of National Ministries andCommissions (No9140A16050109DZ01)the Scientific Research Program of the Education Department of Shanxi Province (No09JK701)
文摘In order to overcome the shortcomings that the reconstructed spectral reflectance may be negative when using the classic principal component analysis （PCA）to reduce the dimensions of the multi-spectral data, a nonnegative constrained principal component analysis method is proposed to construct a low-dimensional multi-spectral space and accomplish the conversion between the new constructed space and the multispectral space. First, the reason behind the negative data is analyzed and a nonnegative constraint is imposed on the classic PCA. Then a set of nonnegative linear independence weight vectors of principal components is obtained, by which a lowdimensional space is constructed. Finally, a nonlinear optimization technique is used to determine the projection vectors of the high-dimensional multi-spectral data in the constructed space. Experimental results show that the proposed method can keep the reconstructed spectral data in [ 0, 1 ]. The precision of the space created by the proposed method is equivalent to or even higher than that by the PCA.
基金Project supported by the National Natural Science Foundation of China （Grant No 10547006）.
文摘Some kinds of low-dimensional nanostructures can be formed by irradiation of laser on the pure silicon sample and the SiGe alloy sample. This paper has studied the photoluminescence （PL） of the hole-net structure of silicon and the porous structure of SiGe where the PL intensity at 706nm and 725nm wavelength increases obviously. The effect of intensity-enhancing in the PL peaks cannot be explained within the quantum confinement alone. A mechanism for increasing PL emission in the above structures is proposed, in which the trap states of the interface between SiO2 and nanocrystal play an important role.
基金supported by the Doctoral Program of Higher Education(20130142120075)the Fundamental Research Funds for the Central Universities(HUST:2016YXMS032)National Key Research and Development Program of China(Grant No.2016YFB0700702)
文摘Metal halide perovskites are crystalline materials originally developed out of scientific curiosity. They have shown great potential as active materials in optoelectronic applications. In the last 6 years, their certified photovoltaic efficiencies have reached 22.1%. Compared to bulk halide perovskites, low-dimensional ones exhibited novel physical properties. The photoluminescence quantum yields of perovskite quantum dots are close to 100%. The external quantum efficiencies and current efficiencies of perovskite quantum dot light-emitting diodes have reached 8% and 43 cd A^(-1),respectively, and their nanowire lasers show ultralow-threshold room-temperature lasing with emission tunability and ease of synthesis. Perovskite nanowire photodetectors reached a responsivity of 10 A W^(-1)and a specific normalized detectivity of the order of 10^(12 )Jones. Different from most reported reviews focusing on photovoltaic applications, we summarize the rapid progress in the study of low-dimensional perovskite materials, as well as their promising applications in optoelectronic devices. In particular, we review the wide tunability of fabrication methods and the state-of-the-art research outputs of low-dimensional perovskite optoelectronic devices. Finally, the anticipated challenges and potential for this exciting research are proposed.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574011 and 51761145025)the Key Program of the National Natural Science Foundation of China(Grant No.No.61731019)the Natural Science Foundation of Beijing,China(Grant Nos.4182015 and 4182014)。
文摘In recent years,low-dimensional materials have received extensive attention in the field of electronics and optoelectronics.Among them,photoelectric devices based on photoconductive effect in low-dimensional materials have a broad development space.In contrast to positive photoconductivity,negative photoconductivity(NPC)refers to a phenomenon that the conductivity decreases under illumination.It has novel application prospects in the field of optoelectronics,memory,and gas detection,etc.In this paper,we review reports about the NPC effect in low-dimensional materials and systematically summarize the mechanisms to form the NPC effect in existing low-dimensional materials.
基金supported by the National Natural Science Foundation of China(61725401,61904058,61904058)the National Key R&D Program of China(2016YFA0204000)+1 种基金China Postdoctoral Science Foundation Project(2019M662623)the National Postdoctoral Program for Innovative Talent(BX20190127).
文摘The photovoltaic(PV)market is currently dominated by silicon based solar cells.However technological diversification is essential to promote competition,which is the driving force for technological growth.Historically,the choice of PV materials has been limited to the three-dimensional(3D)compounds with a high crystal symmetry and direct band gap.However,to meet the strict demands for sustainable PV applications,material space has been expanded beyond 3D compounds.In this perspective we discuss the potential of low-dimensional materials(2D,1D)for application in PVs.We present unique features of low-dimensional materials in context of their suitability in the solar cells.The band gap,absorption,carrier dynamics,mobility,defects,surface states and growth kinetics are discussed and compared to 3D counterparts,providing a comprehensive view of prospects of low-dimensional materials.Structural dimensionality leads to a highly anisotropic carrier transport,complex defect chemistry and peculiar growth dynamics.By providing fundamental insights into these challenges we aim to deepen the understanding of low-dimensional materials and expand the scope of their application.Finally,we discuss the current research status and development trend of solar cell devices made of low-dimensional materials.
