Cu_2NiSnS_4 nanoparticles were prepared for the first time using a facile solid-phase process at a temperature of 180 °C. The crystalline structure, morphology and optical properties of the Cu_2NiSnS_4 nanopartic...Cu_2NiSnS_4 nanoparticles were prepared for the first time using a facile solid-phase process at a temperature of 180 °C. The crystalline structure, morphology and optical properties of the Cu_2NiSnS_4 nanoparticles were characterized by means of X-ray diffraction(XRD), field emission scanning electron microscopy(FESEM), transmission electron microscope(TEM) and ultraviolet-visible(UV-vis) spectrophotometer. The band gap and conversion efficiency of Cu_2NiSnS_4 nanoparticles were studied at various temperature. The results showed that the Cu_2NiSnS_4 nanoparticles exhibited an optimum band gap of 1.58 e V and a conversion efficiency of 0.64% at 180 °C, indicating that it maybe be useful in low-cost thin film solar cells.展开更多
Flexible perovskite solar cells(FPSCs)are supposed to play an important role in the commercialization of perovskite solar cells due to their unique properties,such as high efficiency,thin thickness and being compatibl...Flexible perovskite solar cells(FPSCs)are supposed to play an important role in the commercialization of perovskite solar cells due to their unique properties,such as high efficiency,thin thickness and being compatible with roll to roll(R2R)process for mass production.At present,deformable and lightweight FPSCs have been successfully prepared and applied as power supply by integrating with different wearable and portable electronics,which opens a niche market for photovoltaics.In this mini review,we will introduce the recent progress of FPSCs from the aspect of small-area flexible devices,R2R processed devices with large scale and emerging flexible cells with deformability and stretchability.Finally,conclusion and outlook are provided.展开更多
The properties of yttria stabilized zirconia（YSZ） related to the sintering process were discussed.YSZ nano-powders about 40-100 nm as raw material,the sub-micrometer grain sizes such as 0.4-3 μm in YSZ were gotten ...The properties of yttria stabilized zirconia（YSZ） related to the sintering process were discussed.YSZ nano-powders about 40-100 nm as raw material,the sub-micrometer grain sizes such as 0.4-3 μm in YSZ were gotten by sintering process at 1300 ℃,which was performed at 1000 ℃ for 2 h,then raised the temperature at the rate of 50 ℃ / h to 1400 ℃,then decreased directly to 1300 ℃ in 30 minutes,finally at 1300 ℃ for 5-20 hours.The ratio of bigger grain size becomes larger as the holding time increasing at 1300 ℃.The grains less than 1 μm are about 50%,eg,43.2%,52.2% and 51.1% related to 1300 ℃ holding 5 hours,8 hours and 10 hours,respectively.As YSZ grain size became small,the electrical conductivities did not decrease,even increased,about 0.20 s/cm at 1000 ℃.The reduced sintering temperature and time were benefited to co-fire with the electrodes in electrode-supported SOFCs.展开更多
ZnO thin films are first deposited on n-type silicon by radio frequency(rf)magnetron sputtering at room temperature.And high-K HfO2 gate dielectrics thin films are deposited on ZnO films to form metal-oxide semiconduc...ZnO thin films are first deposited on n-type silicon by radio frequency(rf)magnetron sputtering at room temperature.And high-K HfO2 gate dielectrics thin films are deposited on ZnO films to form metal-oxide semiconductor(MOS)capacitors.The temperature to fabricate ZnO MOS capacitors is 400°C,and the low temperature process is applicable for thin film transistors,flat-panel display(FPD),flexible display,etc.The electronic availability of ZnO thin films,which serve as a semiconductor material for MOS capacitors with HfO2 gate dielectric is investigated.High frequency(1 MHz)capacitance-voltage(C-V)and current-voltage(I-V)characteristics of ZnO-based MOS capacitors are measured.The thermal stability and electronic stability of the ZnO capacitors are investigated,respectively.Experimental results indicate that good electrical characteristics can be obtained on ZnO substrates with high-K HfO2 gate dielectrics.Besides,the ZnO capacitors can exhibit high thermal and electronic stabilities.展开更多
基金supported by the Fundamental Research Funds for the Central Public Welfare Research Institutes (No.TKS20200311)。
文摘Cu_2NiSnS_4 nanoparticles were prepared for the first time using a facile solid-phase process at a temperature of 180 °C. The crystalline structure, morphology and optical properties of the Cu_2NiSnS_4 nanoparticles were characterized by means of X-ray diffraction(XRD), field emission scanning electron microscopy(FESEM), transmission electron microscope(TEM) and ultraviolet-visible(UV-vis) spectrophotometer. The band gap and conversion efficiency of Cu_2NiSnS_4 nanoparticles were studied at various temperature. The results showed that the Cu_2NiSnS_4 nanoparticles exhibited an optimum band gap of 1.58 e V and a conversion efficiency of 0.64% at 180 °C, indicating that it maybe be useful in low-cost thin film solar cells.
文摘Flexible perovskite solar cells(FPSCs)are supposed to play an important role in the commercialization of perovskite solar cells due to their unique properties,such as high efficiency,thin thickness and being compatible with roll to roll(R2R)process for mass production.At present,deformable and lightweight FPSCs have been successfully prepared and applied as power supply by integrating with different wearable and portable electronics,which opens a niche market for photovoltaics.In this mini review,we will introduce the recent progress of FPSCs from the aspect of small-area flexible devices,R2R processed devices with large scale and emerging flexible cells with deformability and stretchability.Finally,conclusion and outlook are provided.
基金Funded by the National Natural Science Foundation of China (NSFC)(No. 50730004)the New Century Elitist Project (No. NCET-06-0203)
文摘The properties of yttria stabilized zirconia（YSZ） related to the sintering process were discussed.YSZ nano-powders about 40-100 nm as raw material,the sub-micrometer grain sizes such as 0.4-3 μm in YSZ were gotten by sintering process at 1300 ℃,which was performed at 1000 ℃ for 2 h,then raised the temperature at the rate of 50 ℃ / h to 1400 ℃,then decreased directly to 1300 ℃ in 30 minutes,finally at 1300 ℃ for 5-20 hours.The ratio of bigger grain size becomes larger as the holding time increasing at 1300 ℃.The grains less than 1 μm are about 50%,eg,43.2%,52.2% and 51.1% related to 1300 ℃ holding 5 hours,8 hours and 10 hours,respectively.As YSZ grain size became small,the electrical conductivities did not decrease,even increased,about 0.20 s/cm at 1000 ℃.The reduced sintering temperature and time were benefited to co-fire with the electrodes in electrode-supported SOFCs.
基金supported by the State Key Development Program for Basic Research of China(Grant No.2006CB302702)the National Natural Science Foundation of China(Grant No.60977016)
文摘ZnO thin films are first deposited on n-type silicon by radio frequency(rf)magnetron sputtering at room temperature.And high-K HfO2 gate dielectrics thin films are deposited on ZnO films to form metal-oxide semiconductor(MOS)capacitors.The temperature to fabricate ZnO MOS capacitors is 400°C,and the low temperature process is applicable for thin film transistors,flat-panel display(FPD),flexible display,etc.The electronic availability of ZnO thin films,which serve as a semiconductor material for MOS capacitors with HfO2 gate dielectric is investigated.High frequency(1 MHz)capacitance-voltage(C-V)and current-voltage(I-V)characteristics of ZnO-based MOS capacitors are measured.The thermal stability and electronic stability of the ZnO capacitors are investigated,respectively.Experimental results indicate that good electrical characteristics can be obtained on ZnO substrates with high-K HfO2 gate dielectrics.Besides,the ZnO capacitors can exhibit high thermal and electronic stabilities.
