High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than...High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...展开更多
This paper introduces a high-precision bandgap reference(BGR)designed for battery management systems(BMS),fea-turing an ultra-low temperature coefficient(TC)and line sensitivity(LS).The BGR employs a current-mode sche...This paper introduces a high-precision bandgap reference(BGR)designed for battery management systems(BMS),fea-turing an ultra-low temperature coefficient(TC)and line sensitivity(LS).The BGR employs a current-mode scheme with chopped op-amps and internal clock generators to eliminate op-amp offset.A low dropout regulator(LDO)and a pre-regula-tor enhance output driving and LS,respectively.Curvature compensation enhances the TC by addressing higher-order nonlinear-ity.These approaches,effective near room temperature,employs trimming at both 20 and 60°C.When combined with fixed cur-vature correction currents,it achieves an ultra-low TC for each chip.Implemented in a CMOS 180 nm process,the BGR occu-pies 0.548 mm²and operates at 2.5 V with 84μA current draw from a 5 V supply.An average TC of 2.69 ppm/℃ with two-point trimming and 0.81 ppm/℃ with multi-point trimming are achieved over the temperature range of-40 to 125℃.It accommo-dates a load current of 1 mA and an LS of 42 ppm/V,making it suitable for precise BMS applications.展开更多
A bandgap voltage reference is designed to meet the requirements of low power loss,low temperature coefficient and high power source rejection ratio(PSRR) in the intergrated circuit. Based on the analysis of conventio...A bandgap voltage reference is designed to meet the requirements of low power loss,low temperature coefficient and high power source rejection ratio(PSRR) in the intergrated circuit. Based on the analysis of conventional bandgap reference circuit,and combined with the integral performance of IC,the specific design index of the bandgap reference is put forward. In the meantime,the circuit and the layout are designed with Chartered 0.35 μm dual gate CMOS process. The simulation result shows that the coefficient is less than 30ppm/℃ with the temperature from -50 ℃ to 150 ℃. The bandgap reference has the characteristics of low power and high PSRR.展开更多
This work presents a bandgap voltage reference(BGR)with source-sink dual current compensation achieving a low temperature coefficient(TC)over the automotive temperature range from−40 to 125°C.The two compensation...This work presents a bandgap voltage reference(BGR)with source-sink dual current compensation achieving a low temperature coefficient(TC)over the automotive temperature range from−40 to 125°C.The two compensation currents are the inverted-V current(IinvV)and the high-low temperature linear current(IHLT),which appear in the form of sourcing and sinking currents,respectively.This design introduces an inverted-V current to mitigate the degradation of the compensation effect caused by temperature range drifts.By exploiting the characteristics of IinvV and IHLT exhibiting the same drift trend,the dual current compensation achieves the compensation performance over the entire automotive temperature range while mitigating the impact of temperature range drifts,thereby optimizing the overall compensation effect.The measured results show that it achieves the best TC of 2.0 ppm/℃ and an average consumption current of 44μA at room temperature.Moreover,the linear sensitivity(LS)is 0.04%/V and power supply rejection(PSR)is−60 dB at 1 Hz at room temperature.展开更多
A third-order,sub-1 V bandgap voltage reference design for low-power supply,high-precision applications is presented.This design uses a current-mode compensation technique and temperature-dependent resistor ratio to o...A third-order,sub-1 V bandgap voltage reference design for low-power supply,high-precision applications is presented.This design uses a current-mode compensation technique and temperature-dependent resistor ratio to obtain high-order curvature compensation.The circuit was designed and fabricated by SMIC 0.18μm CMOS technology.It produces an output reference of 713.6 mV.The temperature coefficient is 3.235 ppm/℃in the temperature range of-40 to 120℃,with a line regulation of 0.199 mV/V when the supply voltage varies from 0.95 to 3 V.The average current consumption of the whole circuit is 49μA at the supply voltage of 1 V.展开更多
基金Supported by Science and Technology Committee of Tianjin (No.06YFGPGX08400)Ministry of Science and Technology of China (No.2009GJF20022)Innovation Fund of Tianjin University
文摘High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...
基金supported by the National Natural Science Foundation of China(NSFC)under grant No.62204235。
文摘This paper introduces a high-precision bandgap reference(BGR)designed for battery management systems(BMS),fea-turing an ultra-low temperature coefficient(TC)and line sensitivity(LS).The BGR employs a current-mode scheme with chopped op-amps and internal clock generators to eliminate op-amp offset.A low dropout regulator(LDO)and a pre-regula-tor enhance output driving and LS,respectively.Curvature compensation enhances the TC by addressing higher-order nonlinear-ity.These approaches,effective near room temperature,employs trimming at both 20 and 60°C.When combined with fixed cur-vature correction currents,it achieves an ultra-low TC for each chip.Implemented in a CMOS 180 nm process,the BGR occu-pies 0.548 mm²and operates at 2.5 V with 84μA current draw from a 5 V supply.An average TC of 2.69 ppm/℃ with two-point trimming and 0.81 ppm/℃ with multi-point trimming are achieved over the temperature range of-40 to 125℃.It accommo-dates a load current of 1 mA and an LS of 42 ppm/V,making it suitable for precise BMS applications.
文摘A bandgap voltage reference is designed to meet the requirements of low power loss,low temperature coefficient and high power source rejection ratio(PSRR) in the intergrated circuit. Based on the analysis of conventional bandgap reference circuit,and combined with the integral performance of IC,the specific design index of the bandgap reference is put forward. In the meantime,the circuit and the layout are designed with Chartered 0.35 μm dual gate CMOS process. The simulation result shows that the coefficient is less than 30ppm/℃ with the temperature from -50 ℃ to 150 ℃. The bandgap reference has the characteristics of low power and high PSRR.
基金supported by the Industrial Core and Key Technique Research Project of Zhuhai under Grant 2320004002564.
文摘This work presents a bandgap voltage reference(BGR)with source-sink dual current compensation achieving a low temperature coefficient(TC)over the automotive temperature range from−40 to 125°C.The two compensation currents are the inverted-V current(IinvV)and the high-low temperature linear current(IHLT),which appear in the form of sourcing and sinking currents,respectively.This design introduces an inverted-V current to mitigate the degradation of the compensation effect caused by temperature range drifts.By exploiting the characteristics of IinvV and IHLT exhibiting the same drift trend,the dual current compensation achieves the compensation performance over the entire automotive temperature range while mitigating the impact of temperature range drifts,thereby optimizing the overall compensation effect.The measured results show that it achieves the best TC of 2.0 ppm/℃ and an average consumption current of 44μA at room temperature.Moreover,the linear sensitivity(LS)is 0.04%/V and power supply rejection(PSR)is−60 dB at 1 Hz at room temperature.
文摘A third-order,sub-1 V bandgap voltage reference design for low-power supply,high-precision applications is presented.This design uses a current-mode compensation technique and temperature-dependent resistor ratio to obtain high-order curvature compensation.The circuit was designed and fabricated by SMIC 0.18μm CMOS technology.It produces an output reference of 713.6 mV.The temperature coefficient is 3.235 ppm/℃in the temperature range of-40 to 120℃,with a line regulation of 0.199 mV/V when the supply voltage varies from 0.95 to 3 V.The average current consumption of the whole circuit is 49μA at the supply voltage of 1 V.
