Single-phase low current grounding faults areoften seen in power distribution system of coal mines.These faults are difficult to reliably identify.We propose a new method of single-phase ground fault protection based ...Single-phase low current grounding faults areoften seen in power distribution system of coal mines.These faults are difficult to reliably identify.We propose a new method of single-phase ground fault protection based upon a discernible matrix of the fractal dimension associated with line currents.The method builds on existing selective protection methods.Faulted feeders are distinguished using differences in the zero-sequence transient current fractal dimension.The current signals were first processed through a fast Fourier transform and then the characteristics of a faulted line were identified using a discernible matrix.The method of calculation is illustrated.The results show that the method involves simple calculations, is easy to do and is highly accurate.It is, therefore, suitable for distribution networks having different neutral grounding modes.展开更多
It has been a scientific and technological problem in the field of microelectronics for several decades that the electrical method is used to measure the peak junction temperature of power transistors. Based on the ex...It has been a scientific and technological problem in the field of microelectronics for several decades that the electrical method is used to measure the peak junction temperature of power transistors. Based on the excessive thermotaxis effect of low current, a novel electrical measurement method of the peak junction temperature is presented in this paper. The method is called the thermal spectrum analysis method of transistors, simply designated TSA （thermal spectrum analysis method）. Unlike the common method which uses a single measuring current, TSA uses multi-step currents to measure temperature-sensitive parameters. Based on the excessive thermotaxis effect of low current and the sub-transistor parallel model, the peak junction temperature and non-uniform property of junction temperature distribution are analyzed successfully.展开更多
A multi-hole vertical-cavity surface-emitting laser （VCSEL） operating in stable single mode with a low threshold current was produced by introducing multi-leaf scallop holes on the top distributed Bragg-refleetor of...A multi-hole vertical-cavity surface-emitting laser （VCSEL） operating in stable single mode with a low threshold current was produced by introducing multi-leaf scallop holes on the top distributed Bragg-refleetor of an oxidation- confined 850 nm VCSEL. The single-mode output power of 2.6 mW, threshold current of 0.6 mA, full width of half maximum lasing spectrum of less than 0.1 nm, side mode suppression ratio of 28.4 dB, and far-field divergence angle of about 10% are obtained. The effects of different hole depths on the optical characteristics are simulated and analysed, including far-field divergence, spectrum and lateral cavity mode. The single-mode performance of this multi-hole device is attributed to the large radiation loss from the inter hole spacing and the scattering loss at the bottom of the holes, particularly for higher order modes.展开更多
An ultra-low quiescent current low-dropout regulator with small output voltage variations and improved load regulation is presented in this paper. It makes use of dynamically-biased shunt feedback as the buffer stage ...An ultra-low quiescent current low-dropout regulator with small output voltage variations and improved load regulation is presented in this paper. It makes use of dynamically-biased shunt feedback as the buffer stage and the LDO regulator can be stable for all load conditions. The proposed structure also employs a momentarily current-boosting circuit to reduce the output voltage to the normal value when output is switched from full load to no load. The whole circuit is designed in a 0.18 μm CMOS technology with a quiescent current of 550 nA. The maximum output voltage variation is less than 20 mV when used with 1 μF external capacitor.展开更多
High-performance low-leakage-current A1GaN/GaN high electron mobility transistors （HEMTs） on silicon （111） sub- strates grown by metal organic chemical vapor deposition （MOCVD） with a novel partially Magnesium ...High-performance low-leakage-current A1GaN/GaN high electron mobility transistors （HEMTs） on silicon （111） sub- strates grown by metal organic chemical vapor deposition （MOCVD） with a novel partially Magnesium （Mg）-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1GaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate HEMTs were also investigated.展开更多
Prior studies have revealed that,as a part of the Pacific tropical gyre,the South China Sea throughflow（SCSTF） is strongly influenced by the Pacific low-latitude western boundary current（LLWBC）.In this study,ocean...Prior studies have revealed that,as a part of the Pacific tropical gyre,the South China Sea throughflow（SCSTF） is strongly influenced by the Pacific low-latitude western boundary current（LLWBC）.In this study,ocean general circulation model（OGCM） experiments with and without connection to the South China Sea（SCS） were performed to investigate the impact of the SCSTF on the Pacific LLWBC.These model experiments show that if the SCS is blocked,seasonal variability of the Kuroshio and Mindanao Current becomes stronger,and the meridional migration of the North Equatorial Current（NEC） bifurcation latitude is enhanced.Both in seasonal and interannual time scales,stronger Luzon Strait transport（LST） induces a stronger Kuroshio transport combined with a southward shift of the NEC bifurcation,which is unfavorable for a further increase of the LST;a weaker LST induces a weaker Kuroshio transport and a northward shifting NEC bifurcation,which is also unfavorable for the continuous decrease of the LST.展开更多
The effect of a novel low-voltage alternating current pulse(ACP)controlled by transformer and silicon controlled rectifier on the solidification structure of Al-20%Si alloy was investigated.The results indicated that ...The effect of a novel low-voltage alternating current pulse(ACP)controlled by transformer and silicon controlled rectifier on the solidification structure of Al-20%Si alloy was investigated.The results indicated that the remarkable segregation of primary Si occurred during the solidification,and even dendrites of a-Al phase appeared at the center of samples under ACP.The thickness of segregation layer decreased first and then increased with current density increasing from 0 to 300 Acm^(-2).The primary Si existed with long pole or five petal star-shaped without ACP.However, the morphology of primary Si phases changed to block under ACP,and the sizes of blocky Si decreased obviously with increasing current density from 110 to 300 Acm^(-2).The formation mechanism of the structure of hypereutectic AI-20%Si alloy was also discussed under ACP.展开更多
The development of portable X-ray detectors is necessary for diagnosing fractures in unconscious patients in emergency situations.However,this is quite challenging because of the heavy weight of the scintillator and s...The development of portable X-ray detectors is necessary for diagnosing fractures in unconscious patients in emergency situations.However,this is quite challenging because of the heavy weight of the scintillator and silicon photodetectors.The weight and thickness of X-ray detectors can be reduced by replacing the silicon layer with an organic photodetectors.This study presents a novel bithienopyrroledione-based polymer donor that exhibits excellent photodetection properties even in a thick photoactive layer(~700 nm),owing to the symmetric backbone and highly soluble molecular structure of bithienopyrroledione.The ability of bithienopyrroledione-based polymer donor to strongly suppress the dark current density(Jd~10−10 A cm^(−2))at a negative bias(−2.0 V)while maintaining high responsivity(R=0.29 A W−1)even at a thickness of 700 nm results in a maximum shot-noise-limited specific detectivity of D_(sh)^(*)=2.18×10^(13)Jones in the organic photodetectors.Printed organic photodetectors are developed by slot-die coating for use in X-ray detectors,which exhibit D_(sh)^(*)=2.73×10^(12)Jones with clear rising(0.26 s)and falling(0.29 s)response times upon X-ray irradiation.Detection reliability is also proven by linear response of the X-ray detector,and the X-ray detection limit is 3 mA.展开更多
A novel CMOS atto-ampere current mirror （AACM） is proposed which reaches the minimum yet reported current range of 0.4 aA. Operation of this circuit is based on the source voltage modulation instead of the conventio...A novel CMOS atto-ampere current mirror （AACM） is proposed which reaches the minimum yet reported current range of 0.4 aA. Operation of this circuit is based on the source voltage modulation instead of the conventionally used gate voltage modulation which interestingly prevents usage of commonly required voltage shifting in those circuits. The proposed circuit has a simple structure prohibiting large chip area consumption which consumes extremely low power of 1.5 μW. It is thus the best choice for ultra low power low voltage （ULPLV） applications. By using a very simple frequency compensation technique, its bandwidth is widened to 15.8 kHz. Simulation results in SMIC （Semiconductor Manufacturing International Corporation） 0.18 μm CMOS technology with Hspice are presented to demonstrate the validation of the proposed current mirror.展开更多
We report on the room-temperature cascade laser （QCL） at λ -4.7μm. cw operation of a surface grating Both grating design and material distributed feedback （DFB） quantum optimization are used to decrease the thre...We report on the room-temperature cascade laser （QCL） at λ -4.7μm. cw operation of a surface grating Both grating design and material distributed feedback （DFB） quantum optimization are used to decrease the threshold current density and to increase the output power. For a high-reflectivity-coated 13-μm-wide and 4- mm-long laser, high wall-plug efficiency of 6% is obtained at 20℃ from a single facet producing over I W of ew output power. The threshold current density of DFB QCL is as low as 1.13kA/cm^2 at 10℃ and 1.34kA/cm2 at 30℃ in cw mode. Stable single-mode emission with a side-mode suppression ratio of about 30 dB is observed in tile working temperature range of 20-50℃.展开更多
The paper adopts finite element method to analyze the forward problem of low-frequency current fields in inhomogeneous media. Firstly, the direct solution of 2-D and 3-D scalar potential is given. Secondly, the techni...The paper adopts finite element method to analyze the forward problem of low-frequency current fields in inhomogeneous media. Firstly, the direct solution of 2-D and 3-D scalar potential is given. Secondly, the technique of covering finite elements for problems with movement has been presented; namely, when the place of testing point moved, the meshing data will be produced automatically to avoid re-meshing and distortion of the mesh. Thirdly the free and prescribed potential method is used to make the finite element coefficient matrices. Then this paper provides the result of a validity test obtained by simulating the laterolog-3 logging, compared with the numerical model-matching method. Finally, the MLL response is calculated.展开更多
The I-V characteristics and low frequency noises for indium zinc oxide thin film transistor are measured between 250 K and 430 K. The experimental results show that drain currents are thermally activated following the...The I-V characteristics and low frequency noises for indium zinc oxide thin film transistor are measured between 250 K and 430 K. The experimental results show that drain currents are thermally activated following the Meyer Neldel rule, which can be explained by the multiple-trapping process. Moreover, the field effect electron mobility firstly increases, and then decreases with the increase of temperature, while the threshold voltage decreases with increasing the temperature. The activation energy and the density of localized gap states are extracted. A noticeable increase in the density of localized states is observed at the higher temperatures.展开更多
A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of hol...A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of holes through polysilicon/silicon interface oxide layer and reduced mobility mechanism in polysilicon. The modeling results based on this model are in good agreement with experimental data.展开更多
A prediction model for Current Efficiency (CE) of low temperature aluminum electrolysis (LTAE) with the low molar ratioelectfolyte of Na3AIF6-AIF3 - CaF2-MgF2-LiF -Al2O3 system was investigated based on artificial neu...A prediction model for Current Efficiency (CE) of low temperature aluminum electrolysis (LTAE) with the low molar ratioelectfolyte of Na3AIF6-AIF3 - CaF2-MgF2-LiF -Al2O3 system was investigated based on artificial neural network principles. The nonlinearmapping between CE of LATE and various electrolytic conditions was obtained from a number of experimental data and used to predictCE of LATE. The trsined neural networks possessed high precision and resulted in a good predicting effect. As a result, attificial neuralnetworks as a new cooperating and predicting technology provide a new approach to the further studies on low temperature aluminumelectrolysis.展开更多
This paper presents a new current conveyor (CCII+) full-wave rectifier for low frequency/small signal medical applications. The proposed rectifier is based on the current conveyor full-wave rectifier proposed previous...This paper presents a new current conveyor (CCII+) full-wave rectifier for low frequency/small signal medical applications. The proposed rectifier is based on the current conveyor full-wave rectifier proposed previously, but the proposed rectifier is better in view of no need diodes to rectify, and no need bias sources to overcome the zero crossing error. It needs only two CCII+s, two resistors, and three simple current mirrors, which is easy for IC implementation and for building in many countries. The PSPICE simulation with the current conveyor CCII+ in the current feedback opamp AD844 IC and the 2N2222 bipolar current mirror shows the good low frequency/small signal rectification, the operation voltage of down to 6 .展开更多
In this paper a novel log-domain current-mode integrator based on MOS transistors in subthreshold is proposed. The integrator's time-constant is tunable by varying a reference bias current. By use of the integrato...In this paper a novel log-domain current-mode integrator based on MOS transistors in subthreshold is proposed. The integrator's time-constant is tunable by varying a reference bias current. By use of the integrator, a fifth-order Chebyshev lowpass filter with 0.1dB ripples is designed. The simulation results demonstrate that the proposed filter has such advantages as low power supply(1.5V), very low power dissipation (μW level), nearly ideal frequency response, very small sensitivity to components in passband, and adjustable cut-off frequency over a wide range.The circuit is composed of NMOS transistors and grounded capacitors which make it suitable for fully integrated circuit implementation.展开更多
The effect of high density pulse electric current (HDPEC) on the solidification structure of the low temperature melt(LTM) of commercial A356 alloy was investigated. In the experiments, the HDPEC was discharged in the...The effect of high density pulse electric current (HDPEC) on the solidification structure of the low temperature melt(LTM) of commercial A356 alloy was investigated. In the experiments, the HDPEC was discharged in the LTM (953?K, 903?K and 873?K). By the control experiments, the results showed that the solidification structure of the LTM of A356 alloy is refined apparently when the HDPEC is discharged in low temperature melt. However, the holding time of melt treated has an adverse effect on the solidification structure. The longer the holding time of the melt treated with HDPEC, the coarser the microstructure. With the same discharge voltage, the lower the temperature of LTM, the more obscure the refinement of solidification structure. Finally, the mechanism of microstructure refining by HDPEC was analyzed.展开更多
A novel low power and low voltage current mirror with a very low current copy error is presented and the principle of its operation is discussed. In this circuit, the gain boosting regulated cascode scheme is used to ...A novel low power and low voltage current mirror with a very low current copy error is presented and the principle of its operation is discussed. In this circuit, the gain boosting regulated cascode scheme is used to improve the output resistance, while using inverter as an amplifier. The simulation results with HSPICE in TSMC 0.18 μm CMOS technology are given, which verify the high performance of the proposed structure. Simulation results show an input resistance of 0.014 Ω and an output resistance of 3 GΩ. The current copy error is favorable as low as 0.002% together with an input （the minimum input voltage of Vin,min- 0.24 V） and an output （the minimum output voltage of Vout,min~ 0.16 V） compliances while working with the 1 V power supply and the 50 μA input current. The current copy error is near zero at the input current of 27 μA. It consumes only 76μW and introduces a very low output offset current of 50 pA.展开更多
基金Project 50504015 supported by the National Natural Science Foundation of Chinathe Youth Science and Technology Research Program of China University of Mining and Technology (0C060996)
文摘Single-phase low current grounding faults areoften seen in power distribution system of coal mines.These faults are difficult to reliably identify.We propose a new method of single-phase ground fault protection based upon a discernible matrix of the fractal dimension associated with line currents.The method builds on existing selective protection methods.Faulted feeders are distinguished using differences in the zero-sequence transient current fractal dimension.The current signals were first processed through a fast Fourier transform and then the characteristics of a faulted line were identified using a discernible matrix.The method of calculation is illustrated.The results show that the method involves simple calculations, is easy to do and is highly accurate.It is, therefore, suitable for distribution networks having different neutral grounding modes.
基金Project supported by the National Natural Science Foundation of China (No.60476039)the Director Foundation of Institute of Microelectronics of Chinese Academy of Sciences (No.5408SA011001)
文摘It has been a scientific and technological problem in the field of microelectronics for several decades that the electrical method is used to measure the peak junction temperature of power transistors. Based on the excessive thermotaxis effect of low current, a novel electrical measurement method of the peak junction temperature is presented in this paper. The method is called the thermal spectrum analysis method of transistors, simply designated TSA （thermal spectrum analysis method）. Unlike the common method which uses a single measuring current, TSA uses multi-step currents to measure temperature-sensitive parameters. Based on the excessive thermotaxis effect of low current and the sub-transistor parallel model, the peak junction temperature and non-uniform property of junction temperature distribution are analyzed successfully.
基金Project supported by the National High Technology Research and Development Program of China (Grant No. 2008AA03Z402)the National Natural Science Foundation of China (Grant No. 61076044)the Natural Science Foundation of Beijing,China(Grant Nos. 4092007 and 4102003)
文摘A multi-hole vertical-cavity surface-emitting laser （VCSEL） operating in stable single mode with a low threshold current was produced by introducing multi-leaf scallop holes on the top distributed Bragg-refleetor of an oxidation- confined 850 nm VCSEL. The single-mode output power of 2.6 mW, threshold current of 0.6 mA, full width of half maximum lasing spectrum of less than 0.1 nm, side mode suppression ratio of 28.4 dB, and far-field divergence angle of about 10% are obtained. The effects of different hole depths on the optical characteristics are simulated and analysed, including far-field divergence, spectrum and lateral cavity mode. The single-mode performance of this multi-hole device is attributed to the large radiation loss from the inter hole spacing and the scattering loss at the bottom of the holes, particularly for higher order modes.
文摘An ultra-low quiescent current low-dropout regulator with small output voltage variations and improved load regulation is presented in this paper. It makes use of dynamically-biased shunt feedback as the buffer stage and the LDO regulator can be stable for all load conditions. The proposed structure also employs a momentarily current-boosting circuit to reduce the output voltage to the normal value when output is switched from full load to no load. The whole circuit is designed in a 0.18 μm CMOS technology with a quiescent current of 550 nA. The maximum output voltage variation is less than 20 mV when used with 1 μF external capacitor.
文摘High-performance low-leakage-current A1GaN/GaN high electron mobility transistors （HEMTs） on silicon （111） sub- strates grown by metal organic chemical vapor deposition （MOCVD） with a novel partially Magnesium （Mg）-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1GaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate HEMTs were also investigated.
基金supported by the Ministry of Science and Technology of the People’s Republic of China (MOST) (Grant No. 2011CB403504)the National Natural Science Foundation of China (Grant Nos. 40625017 and 40806005)
文摘Prior studies have revealed that,as a part of the Pacific tropical gyre,the South China Sea throughflow（SCSTF） is strongly influenced by the Pacific low-latitude western boundary current（LLWBC）.In this study,ocean general circulation model（OGCM） experiments with and without connection to the South China Sea（SCS） were performed to investigate the impact of the SCSTF on the Pacific LLWBC.These model experiments show that if the SCS is blocked,seasonal variability of the Kuroshio and Mindanao Current becomes stronger,and the meridional migration of the North Equatorial Current（NEC） bifurcation latitude is enhanced.Both in seasonal and interannual time scales,stronger Luzon Strait transport（LST） induces a stronger Kuroshio transport combined with a southward shift of the NEC bifurcation,which is unfavorable for a further increase of the LST;a weaker LST induces a weaker Kuroshio transport and a northward shifting NEC bifurcation,which is also unfavorable for the continuous decrease of the LST.
基金Item Sponsored by NPU Foundation for Fundamental ResearchChina[Grant No.JC201272]
文摘The effect of a novel low-voltage alternating current pulse(ACP)controlled by transformer and silicon controlled rectifier on the solidification structure of Al-20%Si alloy was investigated.The results indicated that the remarkable segregation of primary Si occurred during the solidification,and even dendrites of a-Al phase appeared at the center of samples under ACP.The thickness of segregation layer decreased first and then increased with current density increasing from 0 to 300 Acm^(-2).The primary Si existed with long pole or five petal star-shaped without ACP.However, the morphology of primary Si phases changed to block under ACP,and the sizes of blocky Si decreased obviously with increasing current density from 110 to 300 Acm^(-2).The formation mechanism of the structure of hypereutectic AI-20%Si alloy was also discussed under ACP.
基金granted by the Korea Research Institute of Chemical Technology(KRICT)of the Republic of Korea(No.2422-10)the National Research Foundation(NRF)(NRF-2021R1C1C2007445 and RS-2023-00280495)of Republic of Korea.
文摘The development of portable X-ray detectors is necessary for diagnosing fractures in unconscious patients in emergency situations.However,this is quite challenging because of the heavy weight of the scintillator and silicon photodetectors.The weight and thickness of X-ray detectors can be reduced by replacing the silicon layer with an organic photodetectors.This study presents a novel bithienopyrroledione-based polymer donor that exhibits excellent photodetection properties even in a thick photoactive layer(~700 nm),owing to the symmetric backbone and highly soluble molecular structure of bithienopyrroledione.The ability of bithienopyrroledione-based polymer donor to strongly suppress the dark current density(Jd~10−10 A cm^(−2))at a negative bias(−2.0 V)while maintaining high responsivity(R=0.29 A W−1)even at a thickness of 700 nm results in a maximum shot-noise-limited specific detectivity of D_(sh)^(*)=2.18×10^(13)Jones in the organic photodetectors.Printed organic photodetectors are developed by slot-die coating for use in X-ray detectors,which exhibit D_(sh)^(*)=2.73×10^(12)Jones with clear rising(0.26 s)and falling(0.29 s)response times upon X-ray irradiation.Detection reliability is also proven by linear response of the X-ray detector,and the X-ray detection limit is 3 mA.
文摘A novel CMOS atto-ampere current mirror （AACM） is proposed which reaches the minimum yet reported current range of 0.4 aA. Operation of this circuit is based on the source voltage modulation instead of the conventionally used gate voltage modulation which interestingly prevents usage of commonly required voltage shifting in those circuits. The proposed circuit has a simple structure prohibiting large chip area consumption which consumes extremely low power of 1.5 μW. It is thus the best choice for ultra low power low voltage （ULPLV） applications. By using a very simple frequency compensation technique, its bandwidth is widened to 15.8 kHz. Simulation results in SMIC （Semiconductor Manufacturing International Corporation） 0.18 μm CMOS technology with Hspice are presented to demonstrate the validation of the proposed current mirror.
基金Supported by the National Basic Research Program of China under Grant Nos 2013CB632801 and 2013CB632803the National Natural Science Foundation of China under Grant Nos 61435014,61306058 and 61274094the Beijing Natural Science Foundation under Grant No 4144086
文摘We report on the room-temperature cascade laser （QCL） at λ -4.7μm. cw operation of a surface grating Both grating design and material distributed feedback （DFB） quantum optimization are used to decrease the threshold current density and to increase the output power. For a high-reflectivity-coated 13-μm-wide and 4- mm-long laser, high wall-plug efficiency of 6% is obtained at 20℃ from a single facet producing over I W of ew output power. The threshold current density of DFB QCL is as low as 1.13kA/cm^2 at 10℃ and 1.34kA/cm2 at 30℃ in cw mode. Stable single-mode emission with a side-mode suppression ratio of about 30 dB is observed in tile working temperature range of 20-50℃.
基金Supported by the National Natural Science Foundation of China
文摘The paper adopts finite element method to analyze the forward problem of low-frequency current fields in inhomogeneous media. Firstly, the direct solution of 2-D and 3-D scalar potential is given. Secondly, the technique of covering finite elements for problems with movement has been presented; namely, when the place of testing point moved, the meshing data will be produced automatically to avoid re-meshing and distortion of the mesh. Thirdly the free and prescribed potential method is used to make the finite element coefficient matrices. Then this paper provides the result of a validity test obtained by simulating the laterolog-3 logging, compared with the numerical model-matching method. Finally, the MLL response is calculated.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61204112.61204089 and 61306099the Guangdong Provincial Natural Science Foundation under Grant No 2014A030313656
文摘The I-V characteristics and low frequency noises for indium zinc oxide thin film transistor are measured between 250 K and 430 K. The experimental results show that drain currents are thermally activated following the Meyer Neldel rule, which can be explained by the multiple-trapping process. Moreover, the field effect electron mobility firstly increases, and then decreases with the increase of temperature, while the threshold voltage decreases with increasing the temperature. The activation energy and the density of localized gap states are extracted. A noticeable increase in the density of localized states is observed at the higher temperatures.
基金Supported by National Natural Science Foundation of China
文摘A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of holes through polysilicon/silicon interface oxide layer and reduced mobility mechanism in polysilicon. The modeling results based on this model are in good agreement with experimental data.
文摘A prediction model for Current Efficiency (CE) of low temperature aluminum electrolysis (LTAE) with the low molar ratioelectfolyte of Na3AIF6-AIF3 - CaF2-MgF2-LiF -Al2O3 system was investigated based on artificial neural network principles. The nonlinearmapping between CE of LATE and various electrolytic conditions was obtained from a number of experimental data and used to predictCE of LATE. The trsined neural networks possessed high precision and resulted in a good predicting effect. As a result, attificial neuralnetworks as a new cooperating and predicting technology provide a new approach to the further studies on low temperature aluminumelectrolysis.
文摘This paper presents a new current conveyor (CCII+) full-wave rectifier for low frequency/small signal medical applications. The proposed rectifier is based on the current conveyor full-wave rectifier proposed previously, but the proposed rectifier is better in view of no need diodes to rectify, and no need bias sources to overcome the zero crossing error. It needs only two CCII+s, two resistors, and three simple current mirrors, which is easy for IC implementation and for building in many countries. The PSPICE simulation with the current conveyor CCII+ in the current feedback opamp AD844 IC and the 2N2222 bipolar current mirror shows the good low frequency/small signal rectification, the operation voltage of down to 6 .
文摘In this paper a novel log-domain current-mode integrator based on MOS transistors in subthreshold is proposed. The integrator's time-constant is tunable by varying a reference bias current. By use of the integrator, a fifth-order Chebyshev lowpass filter with 0.1dB ripples is designed. The simulation results demonstrate that the proposed filter has such advantages as low power supply(1.5V), very low power dissipation (μW level), nearly ideal frequency response, very small sensitivity to components in passband, and adjustable cut-off frequency over a wide range.The circuit is composed of NMOS transistors and grounded capacitors which make it suitable for fully integrated circuit implementation.
文摘The effect of high density pulse electric current (HDPEC) on the solidification structure of the low temperature melt(LTM) of commercial A356 alloy was investigated. In the experiments, the HDPEC was discharged in the LTM (953?K, 903?K and 873?K). By the control experiments, the results showed that the solidification structure of the LTM of A356 alloy is refined apparently when the HDPEC is discharged in low temperature melt. However, the holding time of melt treated has an adverse effect on the solidification structure. The longer the holding time of the melt treated with HDPEC, the coarser the microstructure. With the same discharge voltage, the lower the temperature of LTM, the more obscure the refinement of solidification structure. Finally, the mechanism of microstructure refining by HDPEC was analyzed.
基金supported by the Iran University of Science and Technology
文摘A novel low power and low voltage current mirror with a very low current copy error is presented and the principle of its operation is discussed. In this circuit, the gain boosting regulated cascode scheme is used to improve the output resistance, while using inverter as an amplifier. The simulation results with HSPICE in TSMC 0.18 μm CMOS technology are given, which verify the high performance of the proposed structure. Simulation results show an input resistance of 0.014 Ω and an output resistance of 3 GΩ. The current copy error is favorable as low as 0.002% together with an input （the minimum input voltage of Vin,min- 0.24 V） and an output （the minimum output voltage of Vout,min~ 0.16 V） compliances while working with the 1 V power supply and the 50 μA input current. The current copy error is near zero at the input current of 27 μA. It consumes only 76μW and introduces a very low output offset current of 50 pA.
